FDMS86101 - ON SEMICONDUCTOR

November, 2018 − Rev. 3

1Publication Order Number:

FDMS86101/D

FDMS86101

MOSFET, N‐Channel,

POWERTRENCH)

100 V, 60 A, 8 mW

General Description

This N−Channel MOSFET is produced using ON Semiconductor’s

advanced POWERTRENCH® process that has been especially

tailored to minimize the on−state resistance and yet maintain superior

switching performance.

Features

•Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A

•Max rDS(on) = 13.5 mW at VGS = 6 V, ID = 9.5 A

•Advanced Package and Silicon combination for low rDS(on) and high

efficiency

•MSL1 robust package design

•100% UIL tested

•100% Rg tested

•These Devices are Pb−Free and are RoHS Compliant

Applications

•DC−DC Conversion

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Symbol Parameter Value Unit

VDS Drain to Source Voltage 100 V

VGS Gate to Source Voltage ±20 V

IDDrain Current:

Continuous, TC = 25°C

Continuous, TA = 25°C (Note 1a)

Pulsed

12.4

200

EAS Single Pulse Avalanche Energy

(Note 3)

173 mJ

PDPower Dissipation:

TC = 25°C

TA = 25°C (Note 1a)

104

2.5

TJ, TSTG Operating and Storage Junction

Temperature Range

−55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

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Power 56

(PQFN8)

CASE 483AE

See detailed ordering and shipping information on page 2 of

this data sheet.

ORDERING INFORMATION

N-Channel MOSFET

MARKING DIAGRAM

$Y&Z&3&K

FDMS

86101

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Data Code (Year & Week)

&K = Lot

FDMS86101 = Specific Device Code

Bottom

Top Pin 1

SSS

DDD

FDMS86101

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PACKAGE MARKING AND ORDERING INFORMATION

Device Marking Device Package Quantity

FDMS86101 FDMS86101 Power 56 (PQFN8)

(Pb-Free / Halogen Free)

3000/Tape&Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

RqJC Thermal Resistance, Junction to Case 1.2 °C/W

RqJA Thermal Resistance, Junction to Ambient (Note 1a) 50

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol Parameter Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V 100 V

DBVDSS

/DTJ

Breakdown Voltage Temperature

Coefficient

ID = 250 mA, referenced to 25°C66 mV/°C

IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 800 nA

IGSS Gate to Source Leakage Current, Forward VGS = ±20 V, VDS = 0 V 100 nA

ON CHARACTERISTICS

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA2.0 2.9 4.0 V

DVGS(th)

/DTJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 250 mA, referenced to 25°C−9 mV/°C

rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 13 A 6.3 8 mW

VGS = 6 V, ID = 9.5 A 8.4 13.5

VGS = 10 V, ID = 13 A, TJ = 125°C 10.9 14

gFS Forward Transconductance VDS = 10 V, ID = 13 A 45 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1 MHz 2255 3000 pF

Coss Output Capacitance 460 610 pF

Crss Reverse Transfer Capacitance 30 45 pF

RgGate Resistance 0.1 1.0 3.0 W

SWITCHING CHARACTERISTICS

td(on) Turn-On Delay Time VDD = 50 V, ID = 13 A, VGS = 10 V,

RGEN = 6 W

15 27 ns

trRise Time 11 20 ns

td(off) Turn-Off Delay Time 27 44 ns

tfFall Time 7 13 ns

QgTotal Gate Charge VGS = 0 V to 10 V, VDD = 50 V,

ID = 13 A

39 55 nC

VGS = 0 V to 5 V, VDD = 50 V,

ID = 13 A

22 31 nC

Qgs Gate to Source Charge VDD = 40 V, ID = 68 A 9.5 nC

Qgd Gate to Drain “Miller” Charge VDD = 40 V, ID = 68 A 10.8 nC

FDMS86101

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)

Symbol UnitMaxTypMinTest ConditionParameter

DRAIN-SOURCE DIODE CHARACTERISTICS

VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V

VGS = 0 V, IS = 13 A (Note 2) 0.8 1.3

trr Reverse Recovery Time IF = 13 A, di/dt = 100 A/ms 56 90 ns

Qrr Reverse Recovery Charge 61 98 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqCA is determined

by the user’s board design.

NOTES:

a. 50 °C/W when mounted on a

1 in2 pad of 2 oz copper.

b. 125 °C/W when mounted on a

minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.

3. EAS of 173 mJ is based on starting TJ = 25°C, L = 0.3 mH, IAS = 34 A, VDD = 75 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 49 A.

TYPICAL CHARACTERISTICS

(TJ = 25°C unless otherwise noted)

VGS = 6 V

VGS = 10 V PULSE DURATION = 80ms

DUTY CYCLE = 0.5% MAX

VGS = 4.5 V

VGS = 5 V

VGS = 5.5 V

0 50 100 150 200

VGS = 6 V

PULSE DURATION = 80ms

DUTY CYCLE = 0.5% MAX

VGS = 10 V

VGS = 4.5 V

VGS = 5.5 V

VGS = 5 V

Figure 1. On Region Characteristics Figure 2. Normalized On−Resistance

vs. Drain Current and Gate Voltage

01 23 45

100

150

200

ID, DRAIN CURRENT (A)

VDS , DRAIN TO SOURCE VOLTAGE (V)

NORMALIZED

DRAIN TO SOURCE ON−RESISTANCE

ID, DRAIN CURRENT (A)

FDMS86101

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TYPICAL CHARACTERISTICS (continued)

(TJ = 25°C unless otherwise noted)

−75 −50 −25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 13 A

VGS = 10 V ID= 13 A

TJ= 25 oC

TJ= 125 oC

PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% MAX

12345678

100

150

200

VDS = 5 V

PULSE DURATION = 80ms

DUTY CYCLE = 0.5% MAX

TJ = −55

TJ = 25 oC

TJ= 150 oC

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.01

0.1

100

TJ = −55oC

TJ = 25 oC

TJ= 150 oC

VGS = 0 V

ID= 13 A VDD = 50 V

VDD = 25 V VDD = 75 V

0.1 1 10 100

100

1000

10000

f = 1 MHz

VGS = 0 V

Crss

Coss

Ciss

Figure 3. Normalized On Resistance

vs. Junction Temperature

Figure 4. On−Resistance vs. Gate

to Source Voltage

46810

0 10203040

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs. Source Current

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain

to Source Voltage

NORMALIZED

DRAIN TO SOURCE ON−RESISTANCE

TJ, JUNCTION TEMPERATURE (5C)

rDS(on) , DRAIN TO

SOURCE ON−RESISTANCE(mW)

VGS, GATE TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

IS, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Qg, GATE CHARGE (nC)

VGS , GATE TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

VDS , DRAIN TO SOURCE VOLTAGE (V)

FDMS86101

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TYPICAL CHARACTERISTICS (continued)

(TJ = 25°C unless otherwise noted)

0.001 0.01 0.1 1 10 100

10 TJ= 100 oC

TJ= 25 oC

TJ= 125 oC

100

25 50 75 100 125 150

VGS = 10 V

0.01 0.1 1 10 100 500

0.001

0.01

0.1

100

500

10 s

1 s

100 ms

10 ms

1 ms

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE

TJ = MAX RATED

RqJA = 125

oC/W

TA = 25 oC

10−310−210−1110

100 1000

0.5

100

1000

2000

SINGLE PULSE

RqJA = 125 oC/W

TA = 25 oC

VGS = 10 V

10−310−210−111 0 100 1000

0.0005

0.001

0.01

0.1

SINGLE PULSE

RqJA = 125 oC/W

DUTY CYCLE−DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x Z qJA x R qJA + TA

Figure 9. Unclamped Inductive

Switching Capability

Figure 10. Maximum Continuous Drain

Current vs. Case Temperature

VGS = 6 V

RqJC = 1.2 oC/W

Limited by Package

Figure 11. Forward Bias Safe

Operating Area

Figure 12. Single Pulse Maximum

Power Dissipation

Figure 13. Junction−to−Ambient Transient Thermal Response Curve

PDM

tAV , TIME IN AVALANCHE (ms)

IAS, AVALANCHE CURRENT (A)

ID, DRAIN CURRENT (A)

c, CASE TEMPERATURE (o

ID, DRAIN CURRENT (A)

VDS , DRAIN to SOURCE VOLTAGE (V)

P(PK), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

NORMALIZED THERMAL

IMPEDANCE,ZsJA

t, RECTANGULAR PULSE DURATION (sec)

POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and or other

countries.

PQFN8 5X6, 1.27P

CASE 483AE

ISSUE A

DATE 27 SEP 201

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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PQFN8 5X6, 1.27P

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