TN0610 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex's well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Low threshold - 2.0V max. High input impedance Low input capacitance - 100pF typical Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device Package Option TN0610 BVDSS/BVDGS RDS(ON) ID(ON) VGS(th) (min) (A) (max) (V) 3.0 2.0 TO-92 (V) (max) () TN0610N3-G 100 1.5 -G indicates package is RoHS compliant (`Green') Pin Configurations Absolute Maximum Ratings SOURCE Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage 20V Operating and storage temperature Soldering temperature* -55OC to +150OC 300OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. DRAIN GATE TO-92 (N3) Product Marking TN 0 6 1 0 YYWW YY = Year Sealed WW = Week Sealed = "Green" Packaging TO-92 (N3) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com TN0610 Thermal Characteristics ID ID Power Dissipation jc Package (continuous) (mA) (pulsed) (A) @TC = 25OC (W) ( C/W) TO-92 500 3.2 1.0 125 O ( C/W) IDR (mA) IDRM 170 500 3.2 O ja (A) Notes: ID (continuous) is limited by max rated Tj . Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 100 - - V VGS = 0V, ID = 1.0mA VGS(th) Gate threshold voltage 0.6 - 2.0 V VGS = VDS, ID= 1.0mA Change in VGS(th) with temperature - - -4.5 IGSS Gate body leakage - - 100 nA VGS = 20V, VDS = 0V - - 10 A IDSS Zero gate voltage drain current VGS = 0V, VDS = Max Rating - - 1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125C ID(ON) On-state drain current 1.2 2.0 - 3.0 6.7 - - - 15 - 1.5 2.0 - 1.0 1.5 - - 0.75 400 500 - VGS(th) RDS(ON) RDS(ON) Static drain-to-source on-state resistance Change in RDS(ON) with temperature Conditions mV/OC VGS = VDS, ID= 1.0mA A VGS = 5.0V, VDS = 25V VGS = 10V, VDS = 25V VGS = 3.0V, ID = 250mA VGS = 5.0V, ID = 750mA VGS = 10V, ID = 750mA %/OC VGS = 10V, ID = 750mA GFS Forward transductance CISS Input capacitance - 100 150 COSS Common source output capacitance - 50 85 CRSS Reverse transfer capacitance - 10 35 td(ON) Turn-on delay time - - 6 Rise time - - 14 Turn-off delay time - - 16 Fall time - - 16 Diode forward voltage drop - 0.8 1.8 V VGS = 0V, ISD = 1.5A Reverse recovery time - 300 - ns VGS = 0V, ISD = 1.5A tr td(OFF) tf VSD trr mmho VDS = 25V, ID = 1.0A pF ns VGS = 0V, VDS = 25V, f = 1.0MHz VDD = 25V, ID = 1.5A, RGEN = 25 Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V VDD 90% INPUT 0V PULSE GENERATOR 10% t(ON) td(ON) VDD t(OFF) tr 10% td(OFF) RL OUTPUT RGEN tF D.U.T. 10% INPUT OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2 TN0610 Typical Performance Curves Output Characteristics Saturation Characteristics 10 10 8 8 10V 6 ID (amperes) ID (amperes) VGS = 9V 8V 4 7V 6V 5V 2 VGS = 6 10V 9V 8V 4 7V 6V 5V 4V 3V 2 3V 0 0 10 20 40 30 0 50 2 1 4 VDS (volts) 6 8 10 VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature 1.0 2.0 VDS = 25V 0.6 TA = -55C PD (watts) GFS (siemens) 0.8 TA = 25C 0.4 TA = 150C TO-92 1.0 0.2 0 1 2 4 6 0 10 8 0 25 50 Maximum Rated Safe Operating Area 125 150 1.0 Thermal Resistance (normalized) ID (amperes) 100 Thermal Response Characteristics 10 1.0 0.1 TO-92 (DC) TC = 25C 0.01 75 TC ( C) ID (amperes) 1 10 100 0.8 0.6 0.4 0.2 0 0.001 1000 VDS (volts) TO-92 P D = 1W T C = 25C 0.01 0.1 1 10 tp (seconds) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 3 TN0610 Typical Performance Curves (cont.) BVDSS Variation with Temperature On-Resistance vs. Drain Current 5 1.1 V GS = 5V RDS(ON) (ohms) BVDSS (normalized) 4 1.0 3 VGS = 10V 2 1 0.9 -50 0 50 100 0 150 0 2 4 6 8 Transfer Characteristics V(th) and RDS Variation with Temperature 2.0 10 1.4 VGS(th) (normalized) TA = -55 OC 25OC 6 4 1.6 V (th)@ 1mA 1.2 1.2 RDS @ 10V, 0.75A 1.0 0.8 0.8 150OC 2 0.4 0.6 0 0 2 4 6 8 10 -50 0 50 VGS (volts) 0 150 Tj ( OC) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 200 f = 1MHz VDS = 10V 8 VGS (volts) 150 C (picofarads) 100 CISS 100 VDS = 40V 6 172 pF 4 COSS 50 2 CRSS 0 0 10 20 30 95 pF 0 0 40 0.5 1.0 1.5 2.0 2.5 QG (nanocoulombs) VDS (volts) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 4 RDS(ON) (normalized) VDS = 25V 8 ID (amperes) 10 ID (amperes) Tj (O C) TN0610 3-Lead TO-92 Package Outline (N3) D A 1 Seating Plane 2 3 L b e1 e c Side View Front View E1 E 3 1 2 Bottom View Symbol Dimensions (inches) A b c D E E1 e e1 L MIN .170 .014 .014 .175 .125 .080 .095 .045 .500 NOM - - - - - - - - - MAX .210 .022 .022 .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC drawing. The value listed is for reference only. This dimension is a non-JEDEC dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate "product liability indemnification insurance agreement." Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com. (c)2008 All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TN0610 A091208 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com