ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 1/32
Mobile SDRAM 512K x 16Bit x 2Banks
Mobile Synchronous DRAM
FEATURES
z 2.5V power supply
z LVCMOS compatible with multiplexed address
z Dual banks operation
z MRS cycle with address key programs
- CAS Latency (2 & 3 )
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave)
z EMRS cycle with address key programs.
z All inputs are sampled at the positive going edg e of the
system clock
z Burst Read Single-bit Write operation
z Special Function Support.
- PASR (Partial Array Self Refresh )
- TCSR (Temperature compensated Self Refresh)
- DS (Driver Strength)
z DQM for masking
z Auto & self refresh
z 32ms refresh period (2K cycle)
GENERAL DESCRIPTION
The M52S16161A is 16,777,216 bits synchronous high
data rate Dynamic RAM organized as 2 x 524,288 words by
16 bits, fabricated with high p erformance CM OS technology.
Synchronous design allows precise cycle control with the
use of system clock I/O transactions are possible on every
clock cycle. Range of operating frequenc ies, programmable
burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high
performance memory system applications.
ORDERING INFORMATION
Part NO. MAX
Freq. Package Comments
M52S16161A-8TG 125MHz 50 Pin TSOP(II) Pb-free
M52S16161A-10TG 100MHz 50 Pin TSOP(II) Pb-free
M52S16161A-8BG 125MHz 60 Ball VFBGA Pb-free
M52S16161A-10BG 100MHz 60 Ball VFBGA Pb-free
PIN CONFIGURATION (TOP VIEW)
VDD
DQ0
DQ1
VSSQ
DQ2
DQ3
VDDQ
DQ4
DQ5
VSSQ
DQ6
DQ7
VDDQ
LDQM
WE
CAS
RAS
CS
BA
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
VSS
DQ15
DQ14
VSSQ
DQ13
DQ12
VDDQ
DQ11
DQ10
VSSQ
DQ9
DQ8
VDDQ
N.C/RFU
UDQM
CLK
CKE
N.C
A9
A8
A7
A6
A5
A4
VSS
50PIN TSOP(II)
(400mil x 825mil)
(0.8 m m PIN PITCH)
VSS DQ15
DQ14 VSSQ
DQ13 VDDQ
DQ12 DQ11
DQ10 VSSQ
DQ9 VDDQ
DQ8 NC
NC NC
NC UDQM
NC CLK
CKE NC
BA A9
A8 A7
A6 A5
VSS A4
DQ0 VDD
VDDQ DQ1
VSSQ DQ2
DQ4 DQ3
VDDQ DQ5
VSSQ DQ6
NC DQ7
NC NC
LDQM WE
CAS
NC CS
NC NC
A0 A10
A2 A1
A3 VDD
1234567
RAS
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R60 Ball VFBGA
(6.4x10.1mm)
(0.65mm ball pitch)
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 2/32
FUNCTIONAL BLOCK DIAGRAM
PIN FUNCTION DESCRIPTION
Pin Name Input Function
CLK System Clock Active on the positive going edge to sample all inputs.
CS Chip Select Disables or enables device operation by masking or enab ling all inputs except
CLK, CKE and L(U)DQM.
CKE Clock Enable Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
A0 ~ A10/AP Address Row / column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA10, column address : CA0 ~ CA7
BA Bank Select Address Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
RAS Row Address Strobe Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
CAS Column Address S trobe Latches column addresses on the positive going edge of the CLK with
CASlow.
Enables column access.
WE Write Enable Enables write operation a nd row precharge.
Latches data in starting from CAS , WE active.
L(U)DQM Data Input / Output Mask Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when L(U)DQM active.
Bank Select Data Input Re gist er
Column Decoder
Latency & Burst Length
Progr ammi ng Regis ter
512K x 16
512K x 16
Ti m i n g Regi s t er
CLK CKE CS RAS CAS WE L(U)DQM
LDQM
LWCBR
DQi
LDQM
LWE
LRAS LCBR LWE LCAS
CLK
ADD
LCKE
Address Register
Row Buffer
Refresh Counter
Row Decoder
Sense AMP
Col. Buffer
LRAS
LCBR
I/O Control Output Buffer
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 3/32
DQ0 ~ 15 Data Input / Output Data inputs/outputs are multiplexed on the same pins.
VDD/VSS Power Supply/Ground Power and ground for the input buffers and the core logic.
VDDQ/VSSQ Data Output Power/Ground Isolated power supply and ground for the output buffers to provide improved
noise immunity.
N.C/RFU No Connection/
Reserved for Future Use This pin is recommended to be left No Connection on the device.
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Value Unit
Voltage on any pin relative to VSS VIN,VOUT -1.0 ~ 3.6 V
Voltage on VDD supply relative to VSS VDD,VDDQ -1.0 ~ 3.6 V
Storage temperature TSTG -55 ~ + 150 C°
Power dissipation PD 0.7 W
Short circuit current IOS 50 mA
Note: Permanent device damage ma y occ ur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating co ndition.
Exposure to higher than recommende d voltage for extende d periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA= 0 C° ~ 70 C° )
Parameter Symbol Min Typ Max Unit Note
VDD 2.3 2.5 2.7 V
2.3 2.5 2.7 V
Supply voltage
VDDQ 1.65 - 2.7 V 1
Input logic high voltage VIH 0.8 x VDDQ - VDDQ+0.3 V 2
Input logic low voltage VIL -0.3 0 0.3 V 3
Output logic high voltage VOH VDDQ - 0.2 - - V IOH =-0.1mA
Output logic low voltage VOL - - 0.2 V IOL = 0.1mA
Input leakage current IIL -10 - 10 uA 4
Output leakage current IOL -10 - 10 uA 5
Note: 1. ESMT can support VDDQ 2.5V (in general case) and 1.8V (in specific case) for VDD 2.5V products. Please contact to
sales. Dept. when considering the use for VDDQ 1.8V (min 1.65V).
2.VIH (max) = 3.0V AC for pulse width ≤ 3ns acceptable.
3.VIL (min) = -1.0V AC for pulse width ≤ 3ns acceptable.
4.Any input 0V≤ VIN ≤ VDDQ, all other pins are not under test = 0V.
5.Dout is disabled, 0V ≤ VOUT ≤ VDDQ.
CAPACITANCE (VDD = 2.5V, TA = 25 C° , f = 1MHz)
Pin Symbol Min Max Unit
CLOCK CCLK - 4.0 pF
RAS , CAS , WE , CS , CKE, LDQM,
UDQM CIN - 4.0 pF
ADDRESS CADD - 4.0 pF
DQ0 ~DQ15 COUT - 6.0 pF
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 4/32
DC CHARACTERISTICS
(Recommended operating conditio n unless otherwise noted, TA = 0 C° ~ 70 C° )
Version
Parameter Symbol Test Condition -8 -10 Unit Note
Operating Current
(One Bank Active) ICC1 Burst Length = 1
tRC ≥ tRC (min), tCC ≥ tCC (min), IOL= 0mA 45 35 mA 1
ICC2P CKE≤VIL(max), tCC =15ns 150 uA
Precharge Standby
Current in power-down
mode ICC2PS CKE≤VIL(max), CLK
≤
VIL(max), tCC =
∞
150 uA
ICC2N CKE≥VIH(min), CS ≥VIH(min), tCC =15ns
Input signals are changed one time during 30ns 6 mA
Precharge Standby
Current in non
power-down mode ICC2NS CKE≥VIH(min), CLK
≤
VIL(max), tCC =
∞
Input signals are stable 2 mA
ICC3P CKE≤VIL(max), tCC =15ns 3
Active Standby Current
in power-down mode ICC3PS CKE ≤ VIL(max), CLK
≤
VIL(max), tCC =
∞
3 mA
ICC3N CKE≥VIH(min), CS ≥ VIH(min), tCC=15ns
Input signals are changed one time during 30ns 10 mA
Active Standby Current
in non power-down
mode
(One Bank Active) ICC3NS CKE≥VIH (min), CLK
≤
VIL(max), tCC=
∞
Input signals are stable 3 mA
Operating Current
(Burst Mode) ICC4 IOL= 0 mA, Page Burst
All Band Activated, tCCD = tCCD (min) 45 35 mA 1
Refresh Current ICC5 tRC ≥tRC(min) 45 35
mA 2
TCSR range 45 70 C°
2 Banks 100 120
1 Bank 95 110
1/2 Bank 90 100
Self Refresh Current I
CC6
CKE≤0.2V
1/4 Bank 85 90
uA
Deep Power Down
Current ICC7 CKE≤0.2V 10 uA
Note: 1.Measured with outputs open. Addresses are changed only one time during tCC(min).
2.Refresh period is 32ms. Addresses are changed only one time during tCC(min).
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 5/32
AC OPERATING TEST CONDITIONS (VDD=2.5V±0.2V, TA= 0 C° ~ 70C°)
Parameter Value Unit
Input levels (Vih/Vil) 0.9 x VDDQ / 0.2 V
Input timing measurement reference level 0.5 x VDDQ V
Input rise and fall time tr / tf = 1 / 1 ns
Output timing measurement referenc e level 0.5 x VDDQ V
Output load condition See Fig.2
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Version
Parameter Symbol
-8 -10
Unit Note
Row active to row active delay tRRD(min) 16 20 ns 1
RAS to CASdelay tRCD(min) 24 30 ns 1
Row precharge time tRP(min) 20 20 ns 1
tRAS(min) 40 50 ns 1
Row active time tRAS(max) 100 us
Row cycle time tRC(min) 56 70 ns 1
Last data in to new col. Address delay tCDL(min) 1 CLK 2
Last data in to row precharge tRDL(min) 2 CLK 2
Last data in to burst stop tBDL(min) 1 CLK 2
Col. Address to col. Address delay tCCD(min) 1 CLK 3
CAS latency=3 2
Number of valid output data CAS latency=2 1 ea 4
Note: 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and
then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address chan ge.
4. In case of row precharge interrupt, auto precharge and read burst stop.
The earliest a precharge command can be issued after a Read command without the loss of data is CL+BL-2 clocks.
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 6/32
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
-8 -10
Parameter Symbol Min Max Min Max Unit Note
CAS Latency =3 8 10
CLK cycle time CAS Latenc y =2 tCC 15 1000 15 1000 ns
1
CAS Latency =3 - 7 - 9
CLK to valid
output delay CAS Latency =2 tSAC - 12 - 12
ns 1
Output data hold time tOH 2.5 - 2.5 -
ns 2
CLK high pulse width tCH 3 - 3 -
ns 3
CLK low pulse width tCL 3 - 3 -
ns 3
Input setup time tSS 3 - 3 -
ns 3
Input hold time tSH 1 - 1 -
ns 3
CLK to output in Low-Z tSLZ 1 - 1 -
ns 2
CAS Latency =3 - 7 - 7
CLK to output in
Hi-Z CAS Latency =2 tSHZ - 8 - 9
ns
*All AC parameters are measured from half to half.
Note: 1.Parameters depend on programmed CAS latency.
2.If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter.
3.Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns should be added to the
parameter.
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 7/32
Mode Register
BA A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address bus
x x 1 0 0 LTMODE WT BL Burst Read and Single Write (for Write
Through Cache)
0 0 0 0 0 LTMODE WT BL Mode Register Set x =Don’t care
A2-A0 WT=0 WT=1
000 1 1
001 2 2
010 4 4
011 8 8
100 R R
101 R R
110 R R
Burst length
111 Full page R
0 Sequential
Wrap type 1 Interleave
A6-A4 CAS Latency
000 R
001 R
010 2
011 3
100 R
101 R
110 R
Latency mode
111 R
Mode Register Write Timing Remark R : Reserved
Mode Register Write
CLOCK
CKE
CS
RAS
WE
A0-A10; BA
CAS
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 8/32
Extended Mode Register
BA A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address bus
1 0 0 0 0 DS X X PASR Extended Mode Register Set x =Don’t care
A2-A0 Self Refresh Coverage
000 2 Banks
001 1 Bank (Bank 0, BA=0)
010 1/2 Bank (BA=A10=0)
011 R
100 R
101 1/4 Bank (BA= A10=A9=0)
110 R
PASR
111 R
A6-A5 Driver Strength
00 Full Strength
01 1/2 Strength
10 1/4 Strength
DS
11 R
Remark R : Reserved
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 9/32
Burst Length and Sequence
(Burst of Two)
Starting Address
(column address A0 binary) Sequential Addressing
Sequence (decimal) Interleave Addressing
Sequence (decimal)
0 0,1 0,1
1 1,0 1,0
(Burst of Four)
Starting Address
(column address A1-A0, binary) Sequential Addressing
Sequence (decimal) Interleave Addressing
Sequence (decimal)
00 0,1,2,3 0,1,2,3
01 1,2,3,0 1,0,3,2
10 2,3,0,1 2,3,0,1
11 3,0,1,2 3,2,1,0
(Burst of Eight)
Starting Address
(column address A2-A0, binary) Sequential Addressing
Sequence (decimal) Interleave Addressing
Sequence (decimal)
000 0,1,2,3,4,5,6,7 0,1,2,3,4,5,6,7
001 1,2,3,4,5,6,7,0 1,0,3,2,5,4,7,6
010 2,3,4,5,6,7,0,1 2,3,0,1,6,7,4,5
011 3,4,5,6,7,0,1,2 3,2,1,0,7,6,5,4
100 4,5,6,7,0,1,2,3 4,5,6,7,0,1,2,3
101 5,6,7,0,1,2,3,4 5,4,7,6,1,0,3,2
110 6,7,0,1,2,3,4,5 6,7,4,5,2,3,0,1
111 7,0,1,2,3,4,5,6 7,6,5,4,3,2,1,0
Full page burst is an extension of the above tables of Sequential Addressing, with the length being 256 for 1Mx16 device.
POWER UP SEQUENCE
1.Apply power and start clock, attempt to maintain CKE= “H”, L(U)DQM = “H” and the other pin are NOP condition at the inputs.
2.Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3.Issue precharge commands for all banks of the devices.
4.Issue 2 or more auto-refresh commands.
5.Issue a mode register set command to initialize the mode register.
6.Issue an extended mode register set command to define special function of the device after normal MRS.
Cf.)Sequence of 4~6 is regardless of the order.
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 10/32
SIMPLIFIED TRUTH TABLE
COMMAND CKEn-1 CKEn CS RAS CAS WE DQM BA A10/AP A9~A0 Note
Mode Register Set H X L L L L X OP CODE 1,2
Register Extended Mode Register
Set H X L L L L X OP CODE 1,2
Auto Refresh H 3
Entry H L L L L H X X 3
L H H H 3
Refresh Self Refresh Exit L H H X X X X X
3
Bank Active & Row Addr . H X L L H H X V Row Address
Auto Precharge Disable L 4
Read &
Column Address Auto Precharge Enable H X L H L H X V
H
Column
Address
(A0~A7) 4,5
Auto Precharge Disable L 4
Write & Column
Address Auto Precharge Enable H X L H L L X V
H
Column
Address
(A0~A7) 4,5
Burst Stop H X L H H L X X 6
Bank Selection V L 4
Precharge Both Banks H X L L H L X
X H X 4
H X X X
Entry H L L V V V X
Clock Suspend or
Active Power Down Exit L H X X X X X X
H X X X
Entry H L L H H H X
H X X X
Precharge Power Down Mode
Exit L H L V V V X X
DQM H X V X 7
H H X X X
No Operation Command H X L H H H
X X
Entry H L L H H L X
Deep Power Down Mode Exit L H X X X X X X
(V= Valid, X= Don’t Care, H= Logic High , L = Logic Low)
Note: 1. OP Code: Operation Code
A0~ A10/AP, BA: Program keys.(@MRS). BA=0 for MRS and BA=1 for EMRS.
2. MRS/EMRS can be issued only at both banks precharge state.
A new command can be issued after 2 clock cycle of MRS/EMRS.
3. Auto refresh functions are as same as CB R refresh of DRAM.
The automatical precharge without row precharge command is meant by “Auto”.
Auto / self refresh can be issued only at both banks idle state.
4. BA: Bank select address.
If “Low”: at read, write, row active and precharge, bank A is selected.
If “High”: at read, write, row active and precharge, bank B is selected.
If A10/AP is “High” at row precharge, BA ignored and both banks are selected.
5. During burst read or write with auto precharge, new read/write command can not be iss ued.
Another bank read /write command can be issued after the end of burst.
New row active of the associated bank can be issue d at tRP after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at positive going edge of a CLK masks the data-in at the very CLK (Write DQM latency is 0), but
makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 11/32
Single Bit Read-Write-Read Cycle (Same Page) @ CAS Latency=3, Burst Length=1
: D o n ' t C a r e
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1 9
CLOCK
CKE
CS
RAS
CAS
ADDR
WE
DQ
DQM
A10/AP
tCH
tCL
tCC
Row Active
BA
*Note1
HIGH
tRCD tSS
tSS
tSH
tSH
tSS
tSH
tSS
tSS
tSH
tSS
tSS
tSH
Ra Ca Cb Cc Rb
BS
BSBS
BS
BSBS
Ra
Qa Db Qc
Rb
Read Write Read
Precharge
Row Active
tRC
tRAS
tRP
tCCD
tRAC
*Note2 *Note2,3 *Note4 *Note2
*Note2,3
*Note 3 *Note 3
*Note2,3
tSH
tSLZ
tSAC
tOH
tSH
tSHtSS
*Note4*Note 3
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 12/32
*Note: 1. All inputs expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.
2. Bank active & read/write are controlled by BA.
BA Active & Read/Write
0 Bank A
1 Bank B
3. Enable and disable auto pr echarge function are controlled b y A10/AP in read/write command.
A10/AP BA Operation
0 Disable auto precharge, leave bank A active at end of burst.
0 1 Disable auto precharge, leave bank B active at end of burst.
0 Enable aut o precharge, precharge bank A at end of burst.
1 1 Enable auto precharge, precharge bank B at end of burst.
4. A10/AP and BA control bank precharge when precharge command is asserted.
A10/AP BA precharge
0 0 Bank A
0 1 Bank B
1 X Both Banks
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 13/32
Power Up Sequence
0 1 2 3 4 5 6 7 8 9 10111213141516 1718 192021
CLOCK
CKE
ADDR
DQ
DQM
A10/AP
t
RP
Key RAa
RAa
Precharge
All Banks Auto Refresh Auto Refresh Mode Register Set
(A-Bank)
Row Active
: Don't care
t
RC
t
RC
High level is necessary
High level is necessary
BA
High-Z
CS
RAS
CAS
WE
Key
Key
Key
Extened Mode Register
Set
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 14/32
Read & Write Cycle at Same Bank @ Burst Length = 4
t
RCD
t
RC
CLOCK
CKE
CS
RAS
CAS
ADDR
DQM
BA
CL=2
CL=3
Ra Rb Cb0
t
OH
t
SAC
t
SHZ
t
SHZ
t
RDL
Read
Row Active Precharge
(A-Bank)
(A-Bank) Precharge
(A-Bank) (A-Bank)
Write
(A-Bank)
Row Active
(A-Bank)
*Note3
*Note3
*Note4
*Note4
:Don'tcare
*Note1
Qa0 Qa1 Qa2 Qa3 Db0 Db3
Db1 Db2
Qa0 Qa1 Qa2 Qa3 Db0 Db3
Db1 Db2
t
RAC
t
RAC
t
RDL
Ca0
A10/AP
Ra Rb
HIGH
*Note2
WE
t
OH
t
SAC
QC
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
*Note: 1. Minimum row cycle times is required to complete internal DRAM operation.
2. Row precharge can interrupt burst on any cycle. [CAS Latency-1] number of valid output data is available after Row
precharge. Last valid output will be Hi-Z(tSHZ) after the clock.
3. Access time from Row active command. tcc*(tRCD +CAS latency-1)+tSAC
4. Ouput will be Hi-Z after the end of burst.(1,2,4,8 bit burst)
Burst can’t end in Full Page Mode.
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 15/32
Page Read & Write Cycle at Same Bank @ Burst Length=4
*Note: 1. To write data before burst read ends, DQM should be asserted three cycle prior to write command to avoid bus
contention.
2. Row precharge will interrupt writing. Last data input, tRDL before Row precharge, will be written.
3. DQM should mask invalid input data on prechar ge command cycle when asserting precharge before end of burst.
Input data after Row precharge cycle will be masked internally.
CLOCK
CKE
CS
RAS
CAS
BA
ADDR
A10/AP
CL=2
CL=3
WE
DQM
HIGH
tRCD
*Note2
Ra Ca0 Cb0 Cc0 Cd0
Ra
Qa0 Qa1 Qb0 Qb1 Qb2 Dc0 Dc1 Dd0 Dd1
Qa0 Qa1 Qb0 Qb1 Dc0 Dc1 Dd0 Dd2
tCDL
*Note1
Row Active
(A-Bank)
Read
(A-Bank) Read
(A-Bank) Write
(A-Bank) Write
(A-Bank) Precharge
(A-Bank)
: Don't care
DQ
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
tRDL
*Note3
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 16/32
Page Read Cycle at Different Bank @ Burst Length=4
*Note: 1.CS can be don’t cared when RAS , CAS and WE are high at the clock high going edge.
2. To interrupt a burst read by row precharge, both the read and the precharge banks must be the same.
CLOCK
CKE
CS
RAS
CAS
BA
ADDR
A10/AP
CL=2
CL=3
WE
DQM
HIGH
*Note2
RAa CAa RBb
RAa
Read
(A-Bank)
Row Active
Row Active
(B-Bank)
(A-Bank) Read
(A-Bank)
Read
(B-Bank) Read
(A-Bank) Read
(B-Bank) Precharge
(A-Bank)
: Don't care
DQ
CBb CAc CBd CAe
QAa0
*Note1
RBb
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
QAa1 QAa2 QAa3 QBb0 QBb1 QBb2 QBb3 QAc0 QAc1 QBd0 QBd1 QAe0 QAe1
QAa0 QAa1 QAa2 QAa3 QB b0 QBb1 QBb2 QBb3 QAc0 QAc1 QBd0 QBd1 QAe0 QAe1
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 17/32
Page Write Cycle at Different Bank @ Burst Length = 4
*Note: 1. To interrupt burst write by row precharge, DQM should be asserted to mask invalid i nput data.
2. To interrupt burst write by row precharge, both the write and the precharge banks must be the same.
CLOCK
CKE
CS
RAS
CAS
BA
ADDR
A10/AP
WE
DQM
HIGH
Row Active
(A-Bank) Row Active
(B-Bank) Write
(A-Bank) Precharge
(Both Banks)
: Don't care
DQ
Write
(A-Bank) Write
(B-Bank)
Write
(B-Bank)
DAa0 DAa1 DAa2 DAa3 DBb0 DBb1 DBb2 DBb3 DAc0 DAc1 DBd0 DBd1
RAa RBb
RAa CAa RBb CBb CAc CBd
*Note2
tCDL tRDL
*Note1
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 18/32
Read & Write Cycle at Different Bank @ Burst Length = 4
*Note: 1. tCDL should be met to complete write.
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 19/32
Read & Write Cycle with auto Precharge @ Burst Length =4
*Note: 1. tCDL should be controlled to meet minimum tRAS before internal precharge start
(In the case of Burst Length=1 & 2 and BRSW mode)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CLOCK
CKE
CAS
ADDR
WE
DQ
DQM
A10/AP
BA
CL=2
CL=3
Row Active
( A - Bank )
Row Active
( B - Ba nk )
Read with
Auto Precharge
( A - Ban k ) Auto Precharge
Start Point
(B-Bank)
: D o n ' t C a r e
Qa1 Qa2 Qa3 Db1 Db2 Db3
Db0Qa0
Ra
Cb
Ra CaRb
Rb
Qa1 Qa2 Qa3 Db1 Db2 Db3
Db0
Qa0
W rite with
Auto Precharge
(B-Bank)
HIGH
Auto Precharge
Start Point
( A - Ba nk)
CS
RAS
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 20/32
Clock Suspension & DQM Operation Cycle @ CAS Latency=2, Burst Length=4
*Note: 1. DQM is needed to prevent bus contention.
CLOCK
CKE
ADDR
DQ
DQM
A10/AP
Ra Ca Cb Cc
Ra
Qa0 Qa1 Qa2 Qa3
tSHZ
Qb1
Qb0
tSHZ
Dc0 Dc2
*Note1
Row Active Read Clock
Suspension Read
Read DQM Write
Write
DQM
Clock
Suspension
Write
DQM
:Don't Care
BA
CS
RAS
CAS
WE
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 21/32
Read Interrupted by Precharge Command & Read Burst Stop Cycle @ Burst Length =Full page
*Note: 1. Burst can’t end in full page mode, so auto precharge can’t issue.
2. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagr am. See the label 1, 2 on them.
But at burst write, burst stop and RAS interrupt should be compared carefu lly.
Refer the timing diagram of “Full page write burst stop cycle”.
3. Burst stop is valid at every burst length.
CLOCK
CKE
ADDR
DQ
DQM
A10/AP
BA
RAa CAa CAb
RAa
QAa0 QAa1 QAb1
QAb0 QAb2
*Note1
Row Active
(A-Bank) Read
(A-Bank) Burst Stop Read
(A-Bank)
:Don't Care
HIGH
CL=2
CL=3
QAa2 QAa3 QAa4 QAb3 QAb4 QAb5
QAa0 QAa1 QAb1
QAb0 QAb2
QAa2 QAa3 QAa4 QAb3 QAb4 QAb5
11
22
Precharge
(A-Bank)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CS
RAS
CAS
WE
*Note2
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 22/32
Write Interrupted by Precharge Command & Write Burst stop Cycle @ Burst Length =Full page
*Note: 1. Burst can’t end in full page mode, so auto precharge can’t issue.
2. Data-in at the cycle of interrupted by precharge can not be written into the correspondin g memory cell. It is defined by
AC parameter of tRDL.
DQM at write interrupted by precharge command is needed to prevent invalid write.
Input data after Row precharge cycle will be masked internally.
3. Burst stop is valid at every burst length.
CLOCK
CKE
ADDR
DQ
DQM
A10/AP
RAa CAa CAb
RAa
DAa0 DAa1 DAb1DAb0 DAb2
Row Active
(A-Bank) Write
(A-Bank) Burst Stop Write
(A-Bank)
:Don't Care
HIGH
DAa2 DAa3 DAa4 DAb3 DAb4 DAb5
Precharge
(A-Bank)
tBDL tRDL
*Note2
CS
RAS
CAS
WE
BA
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 23/32
Burst Read Single bit Write Cycle @ Burst Length=2
*Note: 1. BRSW modes is enabled by setting A9 “High” at MRS (Mode Register Set).
At the BRSW Mode, the burst length at write is fixed to “1” regardless of programmed burst length.
2. When BRSW write command with auto precharge is executed, keep it in mind that tRAS should not be violated.
Auto precharge is executed at the next cycle of burst-end, so in the case of BRSW write command, the precharge
command will be issued after two clock cycles.
CLOCK
CKE
ADDR
CL=2
DQM
A10/AP
BA
RAa RAc
RAa
QAb0
Row Active
(A-Bank)
Write
(A-Bank)
:Don't Care
HIGH
QAb1
Precharge
(A-Bank)
CAa RBb CAb CBc CAd
RAc
DBc0
DQ
DAa0 QAb0 DBc0
QAb1
CL=3
Row Active
(B-Bank) Row Active
(A-Bank)
Write with
Auto Precharge
(B-Bank)
Read
(A-Bank)
DAa0 QAd0 QAd1
QAd0 QAd1
*Note1
CS
RAS
CAS
WE
RBb
*Note2
Read wi th
Auto Precharge
(A-Bank)
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 24/32
Active/Precharge Power Down Mode @ CAS Latency=2, Burst Length=4
*Note: 1. Both banks should be in idle state prior to entering precharge power down mode.
2. CKE should be set high at least 1CLK+tss prior to Row active command.
3. Can not violate minimum refresh specific ation. (32ms)
CLOCK
CKE
ADDR
DQ
DQM
A10/AP
Active
Power-down
Exit
Precharge
: Don't care
*Note3
*Note2
*Note1
tSS
Ra
Ra
Qa0 Qa1 Qa2
tSHZ
Precharge
Power-Down
Entry Pre charge
Power-Down
Exit
Row Active
Active
Power-down
Entry
Read
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
Ca
BA
RAS
CAS
CS
WE
tSS tSS
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 25/32
Deep Power Down Mode Entry & Exit Cycle
Note:
DEFINITION OF DEEP POWER MODE FOR Mobile SDRAM:
Deep Power Down Mode is an operating mode to achieve maximum power reduction by cutting the power of the whole memory
of the device. Once the device enters in Deep Power Down Mode, data will not be retained. Full initialization is required when
the device exits from Deep Power Down Mode.
TO ENTER DEEP POWER DOWN MODE
1) The deep power down mode is entered b y having CS and WE held low with RAS and CAS high at the rising edge of
the clock. While CKE is low.
2) Clock must be stable before exited deep power down mode.
3) Device must be in the all banks idle state prior to entering Deep Power Down mode.
TO EXIT DEEP POWER DOWN MODE
4) The deep power down mode is exited by asserting CKE high.
5) 200μs wait time is required to exit from Deep Power Down.
6) Upon exiting deep power do wn an all bank precharge command must be issued followed by two auto refresh comma nds
and a load mode register sequence.
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 26/32
Self Refresh Entry & Exit Cycle
*Note: TO ENTER SELF REFRESH MODE
1. CS ,RAS & CAS with CKE should be low at the same clock cycle.
2. After 1 clock cycle, all the inputs including the system clock can be don’t care except for CKE.
3. The device remains in s elf refresh mode as long as CKE stays “Low”.
cf.) Once the device enters self refresh mode, minimum tRAS is required before exit from self refresh.
TO EXIT SELF REFRESH MODE
4. System clock restart and be stable before returning CKE high.
5. CS Starts from high.
6. Minimum tRC is required after CKE going high to complete self refresh e xit.
7. 2K cycles of burst auto refresh is required immediately before self refresh entry and immediately after self refresh
exit.
CLOCK
CKE
ADDR
DQ
DQM
A10/AP
Self Refresh Entry Auto Refresh
: Don't care
Self Refresh Exit
Hi-Z Hi-Z
WE
BA
CAS
RAS
CS
*Note2
*Note1
*Note4 tRCmin
*Note6
*Note5
*Note7
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
tSS
*Note3
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 27/32
Mode Register Set Cycle Auto Refresh Cycle
CLOCK
CKE
ADDR Key
:Don't Care
HIGH
CS
RAS
CAS
HIGH
*Note3
Ra
*Note1
DQ Hi-Z
DQM
123456 012345678910
Hi-Z
*Note2
t
RC
MRS New Command Auto Refresh New Command
WE
0
BA
*Both banks precharge should be completed before Mode Register Set cycle and auto refresh cycle.
MODE REGISTER SET CYCLE
*Note: 1.CS ,RAS , CAS & WE activation at the same clock cycle with address key will set internal mode register.
2.Minimum 2 clock cycles should be met before new RAS activation.
3.Please refer to Mode Register Set table.
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 28/32
Extended Mode Register Set Cycle
CLOCK
CKE
ADDR Key
:Don't Care
CS
RAS
CAS
HIGH
*Note3
Ra
*Note1
DQ Hi-Z
DQM
123456
*Note2
EMRS New Command
WE
0
BA
*Both banks precharge sho uld be completed before Extended Mode Register Set cycle.
EXTENDED MODE REGISTER SET CYCLE
*Note: 1.CS ,RAS , CAS & WE activation at the same clock cycle with address key will set internal extended mode re gister.
2.Minimum 2 clock cycles should be met before new RAS activation.
3.Please refer to Extended Mode Register Set table.
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 29/32
PACKAGE DIMENSIONS
50-LEAD TSOP(II) SDRAM(400mil)
Dimension in mm Dimension in inch
Symbol Min Nom Max Min Nom Max
A - - 1.20 - - 0.047
A1 0.051 0.127 0.203 0.002 0.005 0.008
A2 0.95 1.00 1.05 0.037 0.039 0.041
B 0.30 - 0.45 0.012 - 0.018
B1 0.30 0.35 0.40 0.012 0.014 0.016
C 0.12 - 0.21 0.005 - 0.008
C1 0.10 0.127 0.16 0.004 0.005 0.006
D 20.82 20.95 21.08 0.820 0.825 0.830
E 11.56 11.76 11.96 0.455 0.463 0.471
E1 10.03 10.16 10.29 0.394 0.400 0.405
L 0.40 0.50 0.60 0.016 0.020 0.024
L1 0.80 REF 0.031 REF
e 0.80 BSC 0.031 BSC
θ 0 - 8 0 - 8
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 30/32
PACKING DIMENSIONS
60-BALL SDRAM ( 6.4x10.1 mm )
Symbol Dimension in mm Dimension in inch
Min Norm Max Min Norm Max
A
1.00
0.039
A1 0.20 0.25 0.30 0.008 0.010 0.012
A2 0.61 0.66 0.71 0.024 0.026 0.028
Φb 0.30 0.35 0.40 0.012 0.014 0.016
D 6.30 6.40 6.50 0.248 0.252 0.256
E 10.00 10.10 10.20 0.394 0.398 0.402
D1
3.90
0.154
E1
9.10
0.358
e
0.65
0.026
Controlling dimension : Millimeter.
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 31/32
Revision History
Revision Date Description
0.1 2004.10.21 ORIGINAL
0.2 2004.11.10
1. Add one more selection of VDDQ(page3)
2. Modify Vih(max) (Page3)
0.3 2005.05.10
1. Delete M12S16161A-8T
2. Delete CL=1
3. Modify tSAC spec
1.0 2005.06.15
1. Delete Preliminary
2. Delete –8T of page 4
1.1 2006.04.11
Modify part no. at ever page. (M12L16161A Î
M52S16161A)
1.2 2006.09.07 Add BGA to ordering information.
1.3 2007.03.26 Correct orderin g information.
1.4 2007.05.03 刪除 BGA 球型陣列標示
1.5 2007.05.09 Add – 8 spec.
1.6 2009.05.26
1. Correct the voltage of absolute maximum ratings and
the note for VIH
2. Fill in the value of ICC2P, ICC2N, ICC2NS, ICC3P, ICC3PS, and
ICC3NS
3. Correct Power Up Sequence for EMRS and add the
chart of EMRS
4. Add the char of Deep Po wer Down Mode
5. Modify the description about self refresh operation
6. Modify the specification of ICC2PS and ICC3N
ESMT
M52S16161A
Elite Semiconductor Memory Technology Inc. Publication Date : May 2009
Revision : 1.6 32/32
Important Notice
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time of publication. ESMT assumes no responsibility for any error in this
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this document without notice.
The information contained herein is presented only as a guide or examples
for the application of our products. No responsibility is assumed by ESMT for
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third parties which may result from its use. No license, either express ,
implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of ESMT or others.
Any semiconductor devices may have inherently a certain rate of failure. To
minimize risks associated with customer's application, adequate design and
operating safeguards against injury, damage, or loss from such failure,
should be provided by the customer when making application designs.
ESMT's products are not authorized for use in critical applications such as,
but not limited to, life support devices or system, where failure or abnormal
operation may directly affect human lives or cause physical injury or property
damage. If products described here are to be used for such kinds of
application, purchaser must do its own quality assurance testing appropriate
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