2SA1708 / 2SC4488
No.3094-1/5
Features
•Adoption of FBET, MBIT processes.
•High breakdown voltage, large current capacity.
•Fast switching speed.
Specifications ( ) : 2SA1708
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)120 V
Collector-to-Emitter Voltage VCEO (--)100 V
Emitter-to-Base Voltage VEBO (--)6 V
Collector Current IC(--)1 A
Collector Current (Pulse) ICP (--)2 A
Collector Dissipation PC1W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=(--)100V, IE=0A (--)100 nA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)100 nA
DC Current Gain hFE VCE=(--)5V, IC=(--)100mA 100* 400*
Gain-Bandwidth Product fTVCE=(--)10V, IC=(--)100mA 120 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (13)8.5 pF
Continued on next page.
* : The 2SA1708 / 2SC4488 are classified by 100mA hFE as follws:
Rank R S T
hFE 100 to 200 140 to 280 200 to 400
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Ordering number : EN3094A
22509EA MS IM TC-00001859 / 93003TN (KT)/83098HA(KT)/4249MO, TS
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SANYO Semiconductors
DATA SHEET
2SA1708 / 2SC4488
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching Applications