2SA1708 / 2SC4488
No.3094-1/5
Features
Adoption of FBET, MBIT processes.
High breakdown voltage, large current capacity.
Fast switching speed.
Specifications ( ) : 2SA1708
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)120 V
Collector-to-Emitter Voltage VCEO (--)100 V
Emitter-to-Base Voltage VEBO (--)6 V
Collector Current IC(--)1 A
Collector Current (Pulse) ICP (--)2 A
Collector Dissipation PC1W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=(--)100V, IE=0A (--)100 nA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)100 nA
DC Current Gain hFE VCE=(--)5V, IC=(--)100mA 100* 400*
Gain-Bandwidth Product fTVCE=(--)10V, IC=(--)100mA 120 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (13)8.5 pF
Continued on next page.
* : The 2SA1708 / 2SC4488 are classified by 100mA hFE as follws:
Rank R S T
hFE 100 to 200 140 to 280 200 to 400
www.semiconductor-sanyo.com/network
Ordering number : EN3094A
22509EA MS IM TC-00001859 / 93003TN (KT)/83098HA(KT)/4249MO, TS
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
2SA1708 / 2SC4488
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching Applications
2SA1708 / 2SC4488
No.3094-2/5
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)400mA, IB=(--)40mA (--0.2)0.1 (--0.6)0.4 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)400mA, IB=(--)40mA (--)0.85 (--)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)120 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=(--)100 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 V
Turn-ON T ime ton See specified Test Circuit. (80)80 ns
Strage T ime tstg See specified Test Circuit. (700)850 ns
Fall T ime tfSee specified Test Circuit. (40)50 ns
Package Dimensions Switching Time Test Circuit
unit : mm (typ)
7519-003
123
6.9
0.5
0.6
4.0
4.5
1.0
1.0
2.5
1.45 1.0
1.0
0.9 0.45
2.54
2.54
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
ITR04323
2SC4488
--1.0
--0.8
--0.6
--0.4
--0.2
00 --1 --2 --4 --5--3
ITR04322
2SA1708
IB=0mA
--1mA
--2mA
--15mA
--10mA
--5mA
--3mA
--20mA
--25mA
--30mA
IB=0mA
1mA
3mA
2mA
5mA
20mA
15mA
10mA
25mA
30mA
1.0
0.8
0.6
0.4
0.2
0012 453
VR
RL
VCC=50V
VBE= --5V
10IB1= --10IB2= IC=400mA
(For PNP, the polarity is reversed.)
++
50Ω
INPUT OUTPUT
RB
100μF470μF
PW=20μs
IB1
IB2
D.C.1%
2SA1708 / 2SC4488
No.3094-3/5
Gain-Bandwidth Product, fT -- MHz
fT -- ICfT -- IC
Collector Current, IC -- A
Gain-Bandwidth Product, fT -- MHz
Collector Current, IC -- A
DC Current Gain, hFE
hFE -- IC
Collector Current, IC -- A
Collector Current, IC -- A
DC Current Gain, hFE
hFE -- IC
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
IC -- VBE
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
100
10
3
2
7
5
3
2
2SA1708
VCE= --10V
ITR04330
2SC4488
VCE=10V
ITR04331
Ta=75
°
C
25°C
--25
°
C
2SC4488
VCE=5V
ITR04329
100
10 --0.01
1000
7
5
3
2
7
5
3
2
23 57--0.1
72357
--1.0 23
2SA1708
VCE= --5V
ITR04328
Ta=75°C
--25°C
25
°
C
2SC4488
VCE=5V
--25°C
25
°
C
Ta=75°C
ITR04327
25°C
--25°C
Ta=75°C
2SA1708
VCE= --5V
--1.2
--0.6
--0.8
--1.0
--0.2
--0.4
00 --1.2--1.0--0.8--0.6--0.4--0.2
ITR04326 0 1.21.00.80.60.40.2
100
10
3
2
7
5
3
2
1.2
0.6
0.8
1.0
0.2
0.4
0
100
10 0.01
1000
7
5
3
2
7
5
3
2
23 570.1
72357
1.0 23
--0.01 23 57--0.1
72357
--1.0 0.01 23 570.1
72357
1.0
ITR04325
2SC4488
ITR04324
2SA1708
IB=0mA
--0.5mA
--1.0mA
--1.5mA
--2.0mA
--2.5mA
IB=0mA
0.5mA
1.0mA
1.5mA
2.0mA
2.5mA
--500
--400
--300
--200
--100
00 --10 --20 --40 --50--30
500
400
300
200
100
001020 405030
2SA1708 / 2SC4488
No.3094-4/5
VBE(sat) -- IC
Collector Current, IC -- A
Collector Current, IC -- A
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector Current, IC -- A
VCE(sat) -- IC
VBE(sat) -- IC
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Cob -- VCB
Output Capacitance, Cob -- pF
Collector-to-Emitter Voltage, VCE -- V
A S O
Collector Current, IC -- A
Ambient Temperature, Ta -- °C
PC -- Ta
Collector Dissipation, PC -- W
3
1.0
2
0.1
3
0.01
2
5
5
3
2
5
57 2 537 2
1.0 10 2537
100
ITR04338
ITR04337
ITR04339
--10
7
5
3
2
7
5
3
--1.0
--0.01
7237523752
--0.1 --1.0
ITR04336
2SA1708
IC / IB=10 2SC4488
IC / IB=10
1.2
1.0
0
0.8
0.6
0.4
0.2
100 140120 1602006040 80
2SA1708 / 2SC4488
Ta= --25°C
75°C
25°C
IC=1.0A
ICP
=2.0A
100ms
10ms
DC operation
Ta= --25°C
75
°
C
25°C
Single pulse
Ta=25°C
(For PNP, minus sign is omitted.)
ITR04335
Ta=75
°
C
--2
5°C
25
°
C
2SC4488
IC / IB=10
--0.01
7223 57 23 57
--0.1 --1.0
3
2
7
5
3
2
7
5
--1000
--100
ITR04334
Ta=75°C
--25
°
C
25°C
2SA1708
IC / IB=10
0.01
722 3 57 2 3 57
0.1 1.0
3
2
7
5
3
2
7
5
1000
100
10
7
5
3
2
7
5
3
1.0
0.01
7237523752
0.1 1.0
2SA1708 / 2SC4488
1ms
2SC4488
f=1MHz
5
2
3
3
2
5
7
7
100
10
--10 --100--1.0 57723 57223
ITR04332
2SA1708
f=1MHz
ITR04333
5
2
3
2
3
5
7
7
10
100
10 1001.0 57723 57223
2SA1708 / 2SC4488
No.3094-5/5
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
PS
This catalog provides information as of February, 2009. Specifications and information herein are subject
to change without notice.