Sep.1998
Dimensions Inches Millimeters
A 4.25 108.0
B 2.44 62.0
C 1.14 +0.04/-0.02 29 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F 0.87 22.0
G 0.16 4.0
H 0.24 6.0
J 0.59 15.0
Dimensions Inches Millimeters
K 0.71 18.0
L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.11 2.8
S 0.25 Dia. 6.5 Dia.
T 0.6 15.15
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
uLow Drive Power
uLow VCE(sat)
uDiscrete Super-Fast Recovery
Free-Wheel Diode
uHigh Frequency Operation
uIsolated Baseplate for Easy
Heat Sinking
Applications:
uAC Motor Control
uMotion/Servo Control
uUPS
uWelding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM150DU-24H is a
1200V (VCES), 150 Ampere Dual
IGBT Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 150 24
CM
A
S(4 - Mounting
Holes)
B
3 - M6 Nuts
E
D
Q
KKK
F
R
QN G
P
H
J
U
CL
M
H
T
C
Measured
Point
E2
G1
E1
G2
E2
C1C2E1
T
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM150DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM150DU-24H Units
Junction Temperature Tj-40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC150 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 300* Amperes
Emitter Current** (Tc = 25°C) IE150 Amperes
Peak Emitter Current** IEM 300* Amperes
Maximum Collector Dissipation (Tc = 25°C) Pc890 Watts
Mounting Torque, M6 Main Terminal – 3.5~4.5 N · m
Mounting Torque, M6 Mounting – 3.5~4.5 N · m
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 4.5 6 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts
IC = 150A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge QGVCC = 600V, IC = 150A, VGE = 15V – 560 – nC
Emitter-Collector Voltage* VEC IE = 150A, VGE = 0V – – 3.2 Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies ––22nF
Output Capacitance Coes VCE = 10V, VGE = 0V – – 7.4 nF
Reverse Transfer Capacitance Cres – – 4.4 nF
Resistive Turn-on Delay Time td(on) VCC = 600V, IC = 150A, – – 200 ns
Load Rise Time trVGE1 = VGE2 = 15V, – – 250 ns
Switch Turn-off Delay Time td(off) RG = 2.1Ω, Resistive – – 300 ns
Times Fall Time tfLoad Switching Operation – – 350 ns
Diode Reverse Recovery Time trr IE = 150A, diE/dt = -300A/µs – – 300 ns
Diode Reverse Recovery Charge Qrr IE = 150A, diE/dt = -300A/µs – 0.82 – µC
Thermal and M.echanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – 0.14 °C/W
Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module – – 0.24 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – 0.020 – °C/W
MITSUBISHI IGBT MODULES
CM150DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0 200 400
16
12
8
4
0600 800
V
CC
= 600V
V
CC
= 400V
I
C
= 150A
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
I
rr
di/dt = -300A/µsec
T
j
= 25°C
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
2
10
3
10
2
10
1
10
0
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
= ±15V
R
G
= 2.1 Ω
T
j
= 125°C
t
f
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
10
1
C
ies
C
oes
C
res
1.0 3.5
10
0
10
1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
Tj = 25°C
1.5 2.0 2.5 3.0
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0 4 8 12 16 20
8
6
4
2
0
T
j
= 25°C
I
C
= 60A
I
C
= 300A
I
C
= 150A
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0 60 120 180 240
4
3
2
1
0300
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0 4 8 12 16 20
240
180
120
60
0
300
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0246810
180
60
0
V
GE
= 20V
15
12
11
8
T
j
= 25
o
C
120
240
300
10
9
MITSUBISHI IGBT MODULES
CM150DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.14°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10-1
10-2
10-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
10-1
10-2
10-3
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.24°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
MITSUBISHI IGBT MODULES
CM150DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE