RT8073
®
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©
Ordering Information
Note :
Richtek products are :
RoHS compliant and compatible with the current require-
ments of IPC/JEDEC J-STD-020.
Suitable for use in SnPb or Pb-free soldering processes.
General Description
The RT8073 is a high efficiency PWM step-down converter
and capable of delivering 6A output current over a wide
input voltage ra nge from 2.9V to 5.5V.
The RT8073 provides a ccurate regulation for a variety of
loads with an ±1% reference voltage at room temperature.
For reducing inductor size, it provides up to 2MHz
switching frequency . The efficiency is maximized through
the integrated 50mΩ for high side, 35mΩ for low side
MOSFETs a nd 250μA typical supply current.
The RT8073 features over current protection, frequency
fold back function in shorted circuit, hiccup mode under
voltage protection and over temperature protection.
The RT8073 is available in SOP-8 (Exposed Pad) and
W DFN-12L 3x3 packages.
6A, 2MHz, High Efficiency Synchronous Step-Down Converter
Features
Integrated 50mΩΩ
ΩΩ
Ω and 35mΩΩ
ΩΩ
Ω MOSFETs
6A Output Current
High Efficiency Up to 95%
2.9V to 5.5V Input Range
Adjustable PWM Frequency : 300kHz to 2MHz
0.8V ±±
±±
±1% Reference Voltage
Adjustable External Soft-Start
Power Good Indicator (WDFN-12L 3x3 only)
Over Current Protection
Under Voltage Protection
Over Temperature Protection
SOP-8 (Exposed Pad) a nd 12-Lea d WDFN Pa ckage s
RoHS Compliant and Halogen Free
Applications
Low Voltage, High Density Power System s
Distributed Power Systems
Point-of-Load Conversions
Simplified Application Circuit
VIN RT8073
LX
BOOT
COMP VOUT
RT
EN L
CBOOT
COUT RFB1
RFB2
CIN
VIN
FB
GND
RT
RC
CC
Marking Information
RT8073GSP RT8073GSP : Product Number
YMDNN : Date Code
RT8073GQW 5C= : Product Code
YMDNN : Date Code
RT8073
GSPYMDNN
5C=YM
DNN
RT8073
Package Type
SP : SOP-8 (Exposed Pad-Option 2)
QW : WDFN-12L 3x3 (W-Type)
(Exposed Pad-Option 1)
Lead Plating System
G : Green (Halogen Free and Pb Free)
RT8073
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Functional Pin Description
Pin Configurations (TOP VIEW)
SOP-8 (Exposed Pad) WDFN-12L 3x3
COMP
GND
EN
VIN
FB
RT
BOOT
LX
PGND
2
3
45
6
7
8
9
COMP
PGOOD
VIN
EN
FB
RT
LX
LX
LX
SS
VIN BOOT
11
10
9
1
2
3
4
5
12
67
8
PGND
13
Pin No.
SOP-8
(Exposed Pad) WDFN-12L 3x3 Pin Name Pin Function
1 1 COMP Compensation Node.
2 -- GND Analog Ground.
3 4 EN
Chip Enable. Externally pulled high to enable and pulled low to
disable this c hip, and it is internally pulled up to high when the
pin is floating.
4 5, 6 VIN Power Input.
5 7 BOOT Bootstrap Supply for High Side Gate Driver.
6 8, 9, 10 LX Switch Node.
7 11 RT Frequency Setting.
8 1 2 FB Fe edb ack Voltage Input .
9 13
(Ex posed Pad) PGND Power Ground. The exposed pad must be shouldered to a
large PCB and connected to PGND for maximum power
dissipation.
-- 2 PGOOD
Power Good Indicator with Open Drain Output. It is high
impedance when the output voltage is regulated. It is internally
pulled low when the chip is shutdown, thermal shutdown or
VIN is under U VLO threshold.
-- 3 SS Soft-Start Control.
RT8073
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Function Block Diagram
For SOP-8 (Exposed Pad) Package
For WDFN-12L 3x3 Package
EN
VIN
LX
FB
Oscillator
Current
Sense
Shutdown
Control UVLO
Driver
Control
Logic
PGND
PWM
Comparator
Error
Amplifier
Voltage
Reference
Soft-Start
BOOT
Slope
Compensation
RT
EN Threshold
COMP
GND
Over Temperature
Protection
VIN
Internal
pull up
current
EN
VIN
LX
FB
Oscillator
Current
Sense
Shutdown
Control UVLO
Driver
Control
Logic
PGND
PWM
Comparator
Error
Amplifier
Voltage
Reference
Soft-
Start
BOOT
Slope
Compensation
SS
RT
Over Temperature
Protection
EN Threshold
PGOOD
COMP
VIN
Internal
pull up
current
VIN
Power Good
Threshold
RT8073
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Operation
The RT8073 is a current mode synchronous step-down
DC/DC converter with two integrated power MOSFETs. It
can deliver up to 6A output current from a 2.9V to 5.5V
input supply. The RT8073's current mode architecture
allows the transient response to be optimized over a wide
input voltage a nd load range. Cycle-by-cycle current limit
provides protection against shorted outputs a nd soft-start
eliminates input current surge during start-up.
Error Amplifier
The error amplifier adjusts COMP voltage by comparing
the feedback signal (VFB) from the output voltage with the
internal 0.8V reference. When the load current increa ses,
it causes a drop in the feedback voltage relative to the
reference, the COMP voltage then rises to allow higher
inductor current to match the load current.
Oscillator (OSC)
The frequency of the oscillator is adjustable by an external
resistor connected between the RT pin and GND. The
available switching frequency range is from 300kHz to
2MHz.
PGOOD Comparator
When the feedback voltage (VFB) rises above 94% or falls
below 106% of reference voltage, the PGOOD open drain
output will be high impedance. The PGOOD open drain
output will be internally pulled low when the feedback
voltage (VFB) falls below 90% or rises above 110% of
reference voltage.
Soft-Start (SS)
An internal current source charges a n external capa citor
to build the soft-start ra mp voltage (VSS). The VFB voltage
will track the VSS during soft-start interval. The chip will
use internal soft-start if the SS pin is floating. The nominal
internal soft-start time is 800μs.
Over Temperature Protection (OTP)
The RT8073 implements an internal over temperature
protection. When junction temperature is higher than
165°C, it will stop switching operation. Once the junction
temperature decreases below 145°C, the RT8073 will
automatically resume switching.
RT8073
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Recommended Operating Conditions (Note 4)
Supply Input Voltage, VIN ----------------------------------------------------------------------------------------- 2.9V to 5.5V
Junction T emperature Range-------------------------------------------------------------------------------------- 40°C to 125°C
Ambient T emperature Range-------------------------------------------------------------------------------------- 40°C to 85°C
Absolute Maximum Ratings (Note 1)
Supply Input V oltage, VIN ----------------------------------------------------------------------------------------- 0.3V to 6.5V
BOOT to LX ----------------------------------------------------------------------------------------------------------- 0.3V to 6V
Other Pins------------------------------------------------------------------------------------------------------------- 0.3V to (VIN + 0.3V)
Power Dissipation, PD @ TA = 25°C
SOP-8 (Exposed Pad) --------------------------------------------------------------------------------------------- 2.041W
WDFN-12L 3x3------------------------------------------------------------------------------------------------------- 1.667W
Pa ckage Thermal Resista nce (Note 2)
SOP-8 (Exposed Pad), θJA ---------------------------------------------------------------------------------------- 49°C/W
SOP-8 (Exposed Pad), θJC --------------------------------------------------------------------------------------- 15°C/W
WDFN-12L 3x3, θJA ------------------------------------------------------------------------------------------------- 60°C/W
WDFN-12L 3x3, θJC ------------------------------------------------------------------------------------------------- 7.5°C/W
Lead Temperature (Soldering, 10 sec.)------------------------------------------------------------------------- 260°C
Junction T emperature----------------------------------------------------------------------------------------------- 150°C
Storage T emperature Range -------------------------------------------------------------------------------------- 65°C to 150°C
ESD Susceptibility (Note 3)
HBM (Human Body Model)---------------------------------------------------------------------------------------- 2kV
Parameter Symbol Test Conditions Min Typ Max Unit
Input Power Supply
Under Voltage Lockout Threshold VUVLO V
IN Rising -- 2.6 2.8 V
Quiescent Current IQ Active, VFB = 0.9 V, Not switchi ng -- 250 -- A
Shutdown Current ISHDN -- 2 5 A
Voltage Reference
Voltage Reference VREF 0.792 0.8 0.808 V
Enable Logic-High VIH 1.5 -- 5.5
EN Input Voltage Logic-Low VIL -- -- 0.4
V
Switching Frequency Setting 300 -- 2000
RT = 28.7k -- 1400 --
Sw itching Frequency fOSC RT pin is floating - - 300 -- kHz
Minimum On-Time -- 80 -- ns
Minimum Off-Time -- 60 -- ns
(VIN = 5V, CIN = 10μF, TA = 25°C, unless otherwise specified)
Electrical Characteristics
RT8073
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Note 1. Stresses beyond those listed Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is
measured at the exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Parameter Symbol Test Conditions Min Typ Max Unit
MOSFET
High Side MOSFET On-resi stance VIN = 5V, BOOT LX = 5V -- 50 -- m
Low Side MOSFET On-res is tance VIN = 5V -- 35 -- m
Curren t Lim it
Current Lim it Threshold 7 9 -- A
Power Goo d V
FB Ris ing (Good) -- 94 --
V
FB Falling (F ault ) -- 9 0 --
V
FB Ris ing (Fault) -- 110 --
Power Good Range
(WDFN-12L 3x3 only)
V
FB Falling (Good) -- 106 --
% VREF
Over Temperature Protection
Thermal Shutdown Rising -- 165 -- C
Thermal Shutdown Hysteresis -- 20 -- C
RT8073
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Typical Application Circuit
VOUT (V) RFB (k) RFB2 (k) RC (k) CC (nF) L (H) COUT
3.3 75 24 33 0.33 0.47 Cer. 20F + E-Cap 100F
2.5 51 24 24 0.47 0.47 Cer. 20F + E-Cap 100F
1.8 30 24 18 0.56 0.47 Cer. 20F + E-Cap 100F
1.5 21 24 15 0.68 0.33 Cer. 20F + E-Cap 100F
1.2 12 24 12 1 0.33 Cer. 20F + E-Cap 100F
1 6 24 10 1 0.33 Cer. 20F + E-Cap 100F
Table 1. Recommended Component Selection
RT8073
LX
BOOT
COMP
VOUT
RT
SS
L
CBOOT
0.1µF
RFB1
RFB2
RT
28.7k
CSS
10nF
RC
CC
CHF* FB
PGND
GND
COUT1
10µF COUT3
47µF to
100µF
COUT2
10µF
* : Option
VIN
PGOOD
RPG
100k
CIN2
CIN1
10µF
VIN
10µF
EN
Chip Enable
RT8073
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Output Voltage vs. Output Current
1.02
1.04
1.06
1.08
1.10
1.12
1.14
1.16
1.18
0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 4.8 5.4 6.0
Output Current (A)
Output V oltage ( V )
VOUT = 1.1V
VIN = 5V
VIN = 4V
VIN = 3.3V
Efficiency vs. Load Current
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1 10
Load Curren t (A)
Eff iciency (%)
VOUT = 1.1V
VIN = 3.3V
VIN = 4V
VIN = 5V
Output Voltage vs. Input Voltage
1.00
1.02
1.04
1.06
1.08
1.10
1.12
1.14
1.16
1.18
1.20
2.5 3 3.5 4 4.5 5 5.5
In put Voltage (V)
Output V oltage ( V )
VOUT = 1.1V
Output Voltage vs. Temperature
1.06
1.07
1.08
1.09
1.10
1.11
1.12
1.13
1.14
1.15
1.16
-50 -25 0 25 50 75 100 125
Temperature (°C)
Output Vol tage (V)
VIN = 5V, VOUT = 1.1V, IOUT = 1.5A
Typical Operating Characteristics
Frequency vs. Input Voltage
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
2.5 3 3.5 4 4.5 5 5.5
Input Voltage (V)
Fr equency (MH z) 1
VOUT = 1.1V, IOUT = 1.3A
Switching Frequency vs. Te m perature
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
-50 -25 0 25 50 75 100 125
Temper ature (°C)
Swit ching Fr equency (MH z) 1
VOUT = 1.1V, IOUT = 1.3A
RT8073
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VIN = 5V, VOUT = 3.3V, IOUT = 6A
Time (250ns/Div)
Output Ripple Voltage
VOUT
(20mV/Div)
VLX
(5V/Div)
VIN = 5V, VOUT = 1.1V, IOUT = 0A to 3A
Time (100μs/Div)
Load Transient Response
VOUT
(100mV/Div)
IOUT
(2A/Div)
VIN = 5V, VOUT = 1.1V, I OUT = 0A to 6A
Time (100μs/Div)
Load Transient Response
VOUT
(100mV/Div)
IOUT
(2A/Div)
VIN = 5V, VOUT = 1.1V, IOUT = 6A
Time (250ns/Div)
Output Ripple Voltage
VOUT
(20mV/Div)
VLX
(5V/Div)
Currrent Limit vs. Tem pe rature
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
-50 -25 0 25 50 75 100 125
TemperatureC)
Currrent Limit (A)
VIN = 5V, VOUT = 1.1V
Currrent Limit vs. Input Voltage
7.0
7.5
8.0
8.5
9.0
9.5
10.0
2.5 3 3.5 4 4.5 5 5.5
Input Vo ltage (V)
Currrent Limit (A)
VOUT = 1.1V
RT8073
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Time (10ms/Div)
Power Off from EN
VOUT
(2V/Div)
VEN
(5V/Div)
ILX
(5A/Div)
VIN = 12V, VOUT = 1.05V, IOUT = 3A
Time (250μs/Div)
Power On from EN
VOUT
(2V/Div)
VEN
(5V/Div)
ILX
(5A/Div)
VIN = 5V, VOUT = 3.3V, IOUT = 6A
Time (10ms/Div)
Power Off from VIN
VOUT
(2V/Div)
VIN
(5V/Div)
ILX
(5A/Div)
VIN = 5V, VOUT = 3.3V, IOUT = 6A
Time (1ms/Div)
Power On from VIN
VOUT
(2V/Div)
VIN
(5V/Div)
ILX
(5A/Div)
VIN = 5V, VOUT = 3.3V, IOUT = 6A
RT8073
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Application Information
The basic RT8073 application circuit is shown in Typical
Application Circuit. External component selection is
determined by the maximum load current and begins with
the selection of the inductor value and operating frequency
followed by CIN and COUT.
Output Voltage Setting
The output voltage is set by a n external re sistive divider
a ccording to the following equation :
FB1
OUT REF FB2
R
VV1
R




RT8073
GND
FB RFB1
VOUT
RFB2
Figure 1. Setting the Output Voltage
Soft-Start (SS)
An internal current source charges a n external capa citor
to build the soft-start ra mp voltage (VSS). The VFB voltage
will track the VSS during soft-start interval. The chip will
use internal soft-start if the SS pin is floating. The nominal
internal soft-start time is 800μs.
With external soft-start, the typical soft-start ti me ca n be
calculated a s f ollowing equation :
tSS (ms) = 0.1 x CSS (nF)
For example, if CSS = 10nF, the soft-start time is 1ms.
Operating Frequency
Selection of the operating frequency is a tradeoff between
efficiency and component size. High frequency operation
allows the use of smaller inductor and capacitor values.
Operation at lower frequency improves efficiency by
reducing internal gate charge and switching losses but
requires larger inductance and/or capacitance to maintain
low output ripple voltage.
The operating frequency of the RT8073 is determined by
an external resistor that is connected between the SHDN/
RT pin a nd GND. The value of the resistor sets the ra m p
current that is used to charge and discharge an internal
timing ca pacitor within the oscillator . The RT resistor value
can be determined by examining the frequency vs. RT
curve. Although frequency as high as 2MHz is possible,
the minimum on-time of the RT8073 imposes a minimum
limit on the operating duty cycle. The minimum on-time
is typically 80ns. Therefore, the minimum duty cycle is
equal to 100 x 80ns x f (Hz).
Figure 2
Ω
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 20 40 60 80 100 120 140 160 180 200
RT (k )
Swit ching Frequency (MHz) 1
Chip Enable Operation
The EN pin is the chip enable input. Pulling the EN pin
low (<0.4V) will shut down the device. During shutdown
mode, the RT8073 quiescent current drops to lower than
2μA. Driving the EN pin high (>1.5V, 5.5V) will turn on the
device again. For external ti ming control, the EN pin ca n
also be externally pulled high by adding a REN resistor
a nd CEN ca pa citor from the VIN pin (see Figure 3).
where VREF equals to 0.8V (typical)
The resistive divider allows the FB pin to sense a fra ction
of the output voltage a s shown in Figure 1.
Figure 3. Enable Timing Control
RT8073
EN
GND
VIN REN
CEN
EN
RT8073
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An external MOSFET can be added to implement digital
control on the EN pin when no system voltage above 1.5V
is available, a s shown in Figure 4. In this ca se, the pull-up
resistor, REN, is connected between VIN and the EN pin.
MOSFET Q1 will be under logic control to pull down the
EN pin.
Figure 4. Digital Ena ble Control Circuit
RT8073
EN
GND
VIN REN
Q1
EN
Slope Compensation and Inductor Peak Current
Slope compensation provides stability in constant
frequency architectures by preventing sub-harmonic
oscillations at duty cycles greater than 50%. It is
a ccomplished internally by adding a compensating ra mp
to the inductor current signal. Normally, the maximum
inductor peak current is reduced when slope compensation
is added. In the RT8073, however, separated inductor
current signals are used to monitor over current condition.
This keeps the maximum output current relatively constant
regardless of duty cycle.
Hiccup Mode
For the RT8073, it provides Hiccup Mode U nder Voltage
Protection (UVP). When the output is shorted to ground,
the UVP function will be triggered to shut down switching
operation. If the under voltage condition remains for a
period, the RT8073 will retry automatically . When the under
voltage condition is removed, the converter will resume
operation. The UVP is disabled during soft-start period.
Figure 5. Hiccup Mode U nder Voltage Protection
Inductor Selection
The inductor value and operating frequency determine the
ripple current according to a specific input and output
voltage. The ripple current ΔIL increases with higher VIN
and decrea ses with higher inductance.
OUT OUT
LIN
VV
I = 1
fL V




OUT OUT
L(MAX) IN(MAX)
VV
L = 1
fI V





Having a lower ripple current ca n reduce not only the ESR
losses in the output ca pacitors but also the output voltage
ripple. However , it requires a large inductor to achieve this
goal.
For the ripple current selection, the value of ΔIL = 0.4(IMAX)
will be a rea sonable starting point. The largest ripple current
occurs at the highest VIN. To guarantee that the ripple
current stays below the specified maximum, the inductor
value should be chosen according to the following
equation :
The inductor's current rating (caused a 40°C temperature
rising from 25°C ambient) should be greater than the
maximum load current and its saturation current should
be greater tha n the short circuit pe ak current limit.
Time (1ms/Div)
Hiccup Mode
VOUT
(500mV/Div)
ILX
(5A/Div)
VOUT short to GND
RT8073
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Layout Considerations
Follow the PCB layout guidelines for optimal performa nce
of RT8073.
A ground plane is recommended. If a ground plane layer
is not used, the signal and power grounds should be
segregated with all small-signal components returning
to the GND pin at one point that is then connected to
the PGND pin close to the IC. The exposed pad should
be connected to GND.
Connect the terminal of the input capacitor(s), CIN, as
close a s possible to the VIN pin. This ca pacitor provides
the AC current into the internal power MOSFETs.
LX node is with high frequency voltage swing and should
be kept within small area. Keep all sensitive small-signal
nodes away from the LX node to prevent stray capacitive
noise pick-up.
Flood all unused areas on all layers with copper.
Flooding with copper will reduce the temperature rise
of power components.
Connect the FB pin directly to the feedback resistors.
The resistor divider must be connected between VOUT
and GND.
Figure 6. Derating Curve of Maximum Power Dissipation
Thermal Considerations
For continuous operation, do not exceed absolute
maximum junction temperature. The maximum power
dissipation depends on the thermal resistance of the IC
package, PCB layout, rate of surrounding airflow, and
difference between junction and ambient temperature. The
maximum power dissipation can be calculated by the
following formula :
PD(MAX) = (TJ(MAX) TA) / θJA
where TJ(MAX) is the maximum junction temperature, TA is
the a mbient temperature, and θJA is the junction to a mbient
thermal resistance.
For recommended operating condition specifications, the
maximum junction temperature is 125°C. The junction to
a mbient thermal resistance, θJA, is layout dependent. For
SOP-8 (Exposed Pad) pa ckages, the thermal resistance,
θJA, is 49°C/W on a standard JEDEC 51-7 four-layer
thermal test board. For WDFN-12L 3x3 packages, the
thermal resistance, θJA, is 60°C/W on a sta ndard JEDEC
51-7 four-layer thermal test board. The maximum power
dissipation at TA = 25°C can be calculated by the following
formulas :
PD(MAX) = (125°C 25°C) / (49°C/W) = 2.041W for
SOP-8 (Exposed Pad) pa ckage
PD(MAX) = (125°C 25°C) / (60°C/W) = 1.667W for
W DFN-12L 3x3 pa ckage
The maximum power dissipation depends on the operating
ambient temperature for fixed TJ(MAX) and thermal
resistance, θJA. The derating curves in Figure 6 allow the
designer to see the effect of rising ambient temperature
on the maximum power dissipation.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 25 50 75 100 125
Ambient Tempera tur e (°C)
Maximum Powe r Dissi pati on (W
)
WDFN-12L 3x3
Four-Layer PCB
SOP-8 (Exposed Pad)
RT8073
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Figure 7. PCB Layout Guide for W D FN-12L 3x3
Figure 8. PCB Layout Guide f or SOP-8 (Exposed Pad)
COMP
PGOOD
VIN
EN
FB
RT
LX
LX
LX
SS
VIN BOOT
11
10
9
1
2
3
4
5
12
67
8
PGND
13
VOUT
GND
RFB1
RFB2
RTL
CBOOT
COUT
GND
CIN
GND
REN
CSS
RGOOD
CC
RC
GND
LX should be connected to
inductor by wide and short t rac e,
keep sensitive components away
from this trace.
Output capacitor
must be near RT8073
Connect the FB pin directly to feedback resistors. The
resistor divider mus t be connec ted between VOUT and GND.
CIN must be placed
between VIN and GND
as closer as pos sible.
COMP
GND
EN
VIN
FB
RT
BOOT
LX
PGND
2
3
45
6
7
8
9
VOUT
RFB1
RFB2
GND
RT
L
CBOOT COUT
CIN
REN
CC
RC
GND
GND Output capacitor
must be near RT8073
LX should be connected to
inductor by wide and short trace,
keep sensitive components away
from this trace.
CIN must be placed
between VIN and GND
as closer as possible.
Connect the FB pin directly to f eedbac k resistors. The resistor
divider must be connected between V OUT and GND.
Table 2. Inductors
Component Suppli er Series Inductance (H) DCR (m) Curren t Rat ing (A) Case Si z e
Wurth Elektronik No.744308033 0.33 0.37 27 1070
Wurth Elektronik No.744355147 0.47 0.67 30 1365
Table 3. Capaci tors f or CIN an d COUT
Component Suppli er Part No . Capacitance (F) Case Size
TDK C3225X5R0J226M 22 1210
TDK C2012X5R0J106M 10 0805
Panasonic ECJ4YB0J226M 22 1210
Panasonic ECJ4YB1A106M 10 1210
TAIYO YUDEN LMK325BJ226ML 22 1210
TAIYO YUDEN JMK316BJ226ML 22 1206
TAIYO YUDEN JMK212BJ106ML 10 0805
Recommended component selection for T ypical Application
RT8073
15
DS8073-02 August 2014 www.richtek.com
©
Copyright 2014 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.
Outline Dimension
A
B
J
F
H
M
C
D
I
Y
X
EXPOSED THERMAL PAD
(Bottom of Package)
8-Lead SOP (Exposed Pad) Plastic Package
Dime nsio ns In Millime ters Dimensions In Inches
Symbol Min Max Min Max
A 4.801 5.004 0.189 0.197
B 3.810 4.000 0.150 0.157
C 1.346 1.753 0.053 0.069
D 0.330 0.510 0.013 0.020
F 1.194 1.346 0.047 0.053
H 0.170 0.254 0.007 0.010
I 0.000 0.152 0.000 0.006
J 5.791 6.200 0.228 0.244
M 0.406 1.270 0.016 0.050
X 2.000 2.300 0.079 0.091
Option 1 Y 2.000 2.300 0.079 0.091
X 2.100 2.500 0.083 0.098
Option 2 Y 3.000 3.500 0.118 0.138
RT8073
16 DS8073-02 August 2014www.richtek.com
Richtek Technology Corporation
14F, No. 8, Tai Yuen 1st Street, Chupei City
Hsinchu, Taiwan, R.O.C.
Tel: (8863)5526789
Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should
obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot
assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be
accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries.
Min. Max. Min. Max.
0.700 0.800 0.028 0.031
0.000 0.050 0.000 0.002
0.175 0.250 0.007 0.010
0.150 0.250 0.006 0.010
2.950 3.050 0.116 0.120
Option1 2.300 2.650 0.091 0.104
Option2 1.970 2.070 0.078 0.081
2.950 3.050 0.116 0.120
Option1 1.400 1.750 0.055 0.069
Option2 1.160 1.260 0.046 0.050
0.350 0.450 0.014 0.018
0.450 0.018
L
D2
E
E2
e
A1
A3
b
D
Symbol Dim e nsions In Millime te rs Dime nsions In Inches
A
11
2
2
Note : The configuration of the Pin #1 identifier is optional,
but must be located within the zone indicated.
DETAIL A
Pin #1 ID a nd T ie Bar M ark Options
W-Type 12L DFN 3x3 Package