Econo IPM series 600V / 50A 7 in one-package
7MBP50TEA060
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Symbol Rating Unit
Min. Max.
Bus voltage DC
Surge
Short operating
Collector-Emitter voltage *1
Collector current DC
1ms
Duty=76.1% *2
Collector power dissipation One transistor *3
Collector current DC
1ms
Forward current diode
Collector power dissipation One transistor *3
Supply voltage of Pre-Driver *4
Input signal voltage *5
Input signal current
Alarm signal voltage *6
Alarm signal current *7
Junction temperature
Operating case temperature
Storage temperature
Solder temperature *8
Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)
Screw torque Mounting (M5)
VDC
VDC(surge)
VSC
VCES
IC
ICP
-IC
PC
IC
ICP
IF
PC
VCC
Vin
Iin
VALM
IALM
Tj
Topr
Tstg
Tsol
Viso
Item
0
0
200
0
-
-
-
-
-
-
-
-
-0.5
-0.5
-
-0.5
-
-
-20
-40
-
-
-
450
500
400
600
50
100
50
144
30
60
30
144
20
Vcc+0.5
3
Vcc
20
150
100
125
260
AC2500
3.5
V
V
V
V
A
A
A
W
A
A
A
W
V
V
mA
V
mA
°C
°C
°C
°C
V
N·m
Inverter
Note
*1 : Vces shall be applied to the input voltage between terminal P and U or ‚u or W , N and U or V or W
*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/1.263/(50 x 2.6) x 100=76.1%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.87=144W [Inverter]
Pc=125°C/IGBT Rth(j-c)=125/0.87=144W [Breake]
*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13
*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13.
*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.
*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.
*8 : Immersion time 10±1sec.
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7MBP50TEA060 IGBT-IPM
Control circuit
Item Symbol Condition Min. Typ. Max. Unit
Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)
Input zener voltage
Alarm signal hold time
Current limit resistor
Switching Trequency : 0 to 15kHz
Tc=-20 to 125°C Fig.7
ON
OFF
Rin=20k ohm
Tc=-20°C Fig.2
Tc=25°C Fig.2
Tc=125°C Fig.2
Alarm terminal
Iccp
ICCN
Vin(th)
VZ
tALM
RALM
-
-
1.00
1.25
-
1.1
-
-
1425
-
-
1.35
1.60
8.0
-
2.0
-
1500
18
65
1.70
1.95
-
-
-
4.0
1575
mA
mA
V
V
V
ms
ms
ms
ohm
Protection Section ( Vcc=15V)
Turn-on time
Turn-off time
Reverse recovery time
Maximum Avalanche Energy
(A non-repetition)
ton VDC=300V,Tj=125°C
toff IC=50A Fig.1, Fig.6
trr VDC=300V, IC=50A Fig.1, Fig.6
PAV Internal wiring inductance=50nH
Main circuit wiring inductace=54nH
Thermal characteristics( Tc=25°C)
Item Symbol Min. Typ. Max. Unit
Junction to Case thermal resistance *9
Case to fin thermal resistance with compound
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
- - 0.87
- - 1.263
- - 0.87
- 0.05 -
°C/W
°C/W
°C/W
°C/W
Inverter IGBT
FWD
Brake IGBT
Item Symbol Min. Typ. Max. Unit
DC Bus Voltage
Operating Supply Voltage of Pre-Driver
Screw torque (M5)
VDC
VCC
-
Recommendable value
Over Current Protection Level of Inverter circuit
Over Current Protection Level of Brake circuit
Over Current Protection Delay time
SC Protection Delay time
IGBT Chip Over Heating
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit
Item Symbol Condition Min. Typ. Max. Unit
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
ICES
VCE(sat)
VF
ICES
VCE(sat)
VF
VCE=600V Vin terminal open.
Ic=50A
-Ic=50A
Terminal
Chip
Terminal
Chip
IOC
IOC
tDOC
tSC
TjOH
TjH
VUV
VH
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C Fig.4
Surface of IGBT chips
75 -
45 -
-5-
--8
150 - -
-20 -
11.0 - 12.5
0.2 0.5 -
A
A
µs
µs
°C
°C
V
V
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Common mode rectangular noise
Common mode lightning surge
Pulse width 1µs, polarity ±,10minuets
Judge : no over-current, no miss operating
Rise time 1.2µs, Fall time 50µs
Interval 20s, 10 times
Judge : no over-current, no miss operating
±2.0 - -
±5.0 - -
Item Symbol Condition Min. Typ. Max. Unit
Item Condition Min. Typ. Max. Unit
kV
kV
- - 400 V
13.5 15.0 16.5 V
2.5 - 3.0 Nm
Item Symbol Min. Typ. Max. Unit
Weight
Weight Wt - 270 - g
Inverter
- - 1.0 mA
- - 2.5 V
- 2.0 -
- - 2.6 V
- 1.6 -
- - 1.0 mA
- - 2.2 V
- 1.75 -
- - 3.3 V
- 1.9 -
1.2 - - µs
- - 3.6
- - 0.3
30 - - mJ
*9 For 1device, Case is under the device
Brake
Terminal
Chip
Terminal
Chip
VCE=600V Vin terminal open.
Ic=30A
-Ic=30A
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7MBP50TEA060 IGBT-IPM
Figure 1. Switching Time Waveform Definitions
Figure 2. Input/Output Timing Diagram
Figure.4 Definition of tsc
Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit
Figure 6. Switching Characteristics Test Circuit
Ic Ic
IALM
tsc
IALM IALM
Ic
Ic Ic
IALM
tsc
IALM IALM
Ic
/Vin
Vge (Inside IPM )
Faul t (I nside IPM )
/ALM
Gate Off
on
Gate On
2ms (typ.)
off
normal
tALMMax. tAL M > Max.
off
Faul t : Over-c urrent , Over -heat or Under- volt age
on
alarm
tALM > 123
/Vin
Vge (Inside IPM )
Faul t (I nside IPM )
/ALM
Gate Off
on
Gate On
2ms (typ.)
off
normal
tALMMax. tAL M > Max.
off
Faul t : Over-c urrent , Over -heat or Under- volt age
on
alarm
tALM > 123
On
ton
Vin
Ic
Vin(th)
Vin(th)
50%
toff
10%
trr 90%
90%
On
ton
Vin
Ic
Vin(th)
Vin(th)
50%
toff
10%
trr 90%
90%
Vin
DC
15V
DC
300V
N
+
L
IPM
Ic
P
HCPL-
4504
Vcc
GND N
+
IPM
P
-
20k
Vin
DC
15V
DC
300V
N
+
L
IPM
Ic
P
HCPL-
4504
Vcc
GND N
+
IPM
P
-
20k
AVcc
Vin
GND
Icc P
U
V
W
N
P.G
+8V
fsw
IPM
DC
15V
AVcc
Vin
GND
Icc P
U
V
W
N
P.G
+8V
fsw
IPM
DC
15V
VccU
DC
15V
+
IPM
P
U
V
W
N
20k VinU
GNDU
SW1
Vcc
DC
15V
20k VinX
GND
SW2
Cooling
Fin
Earth
AC200V
4700p Noise
CT
VccU
DC
15V
+
IPM
P
U
V
W
N
20k VinU
GNDU
SW1
Vcc
DC
15V
20k VinX
GND
SW2
Cooling
Fin
Earth
AC200V
4700p Noise
CT
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7MBP50TEA060 IGBT-IPM
Block diagram
Outline drawings, mm
Mass : 270g
U
V
W
Vcc
VinX
GND
VinY
VinZ
ALM
B
N
VinDB
VccW
ALMW
GNDW
VccV
ALMV
GNDV
P
VccU
ALMU
GNDU
VinU
VinV
VinW
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Vz
RALM1.5k
RALM1.5k Vz
RALM1.5k Vz
Vz
Vz
Vz
Vz
RALM1.5k
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
4
3
2
1
8
6
5
7
12
11
10
9
14
16
13
17
18
15
19
U
V
W
Vcc
VinX
GND
VinY
VinZ
ALM
B
N
VinDB
VccW
ALMW
GNDW
VccV
ALMV
GNDV
P
VccU
ALMU
GNDU
VinU
VinV
VinW
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Vz
RALM1.5k
RALM1.5k Vz
RALM1.5k Vz
Vz
Vz
Vz
Vz
RALM1.5k
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
44
3
2
1
8
6
5
7
12
11
10
9
14
16
13
17
18
15
19
Pre-drivers include following functions
1.Amplifier for driver
2.Short circuit protection
3.Under voltage lockout circuit
4.Over current protection
5.IGBT chip over heating protection
Package type : P622
Dimensions in mm
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IGBT-IPM
Characteristics
Control circuit characteristics (Respresentative)
7MBP50TEA060
0
10
20
30
40
50
60
0 5 10 15 20 25
Power sup p ly cu rrent vs. Switch ing frequ ency
Tc=125°C
N-side
P-side
Power sup ply curre nt : Icc (mA)
Switching frequency : fsw (kHz)
Vcc=13V
Vcc=13V
Vcc=15V
Vcc=15V
Vcc=17V
Vcc=17V
0
0.5
1
1.5
2
2.5
12 13 14 15 16 17 18
Input signal threshold voltage
vs. Power supply voltage
In put sign al th resh o ld v ol tage
: Vin(on ),Vin(o ff) (V)
Power supply voltag e : Vcc (V)
Tj=25°C
Tj=125°C
} Vin(on)
} Vin(off)
0
2
4
6
8
10
12
14
20 40 60 80 100 120 140
U n d er voltage vs. J u nc tion temperatu re
Under voltage : VUVT (V)
Jun ction temp eratur e : Tj ( °C)
0
0.2
0.4
0.6
0.8
1
20 40 60 80 100 120 140
Un d er voltag e h ysterisis vs. Jn ction tem p erat ure
Under voltage hysterisis : VH (V)
Jun ction temp erature : T j ( °C)
0
0.5
1
1.5
2
2.5
3
12 13 14 15 16 17 18
Alarm hold time vs. P ower supply voltage
Ala rm hold time : t ALM (mSec)
Power sup p ly voltage : Vcc (V)
Tc=100°C
Tc=25°C
0
50
100
150
200
12 13 14 15 16 17 18
O ver heating c h aracteristics
TjO H ,TjH vs. V cc
Over he atin g p rote ction : TjO H (°C)
OH hysterisis : TjH (°C)
Power supply voltag e : Vcc (V)
TjOH
TjH
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7MBP50TEA060 IGBT-IPM
Main circuit characteristics (Respresentative)
0
10
20
30
40
50
60
00.511.522.53
Collector current vs. Collector-Emitter voltage
Tj=25°C(Chip)
Vcc=13V
Vcc=15V
Vcc=17V
Collector Cu rrent : Ic (A)
Coll ector-Emitter vo lta g e : Vce ( V)
0
10
20
30
40
50
60
00.511.522.53
Collector current vs. Collector-Emitter voltage
Tj=25°C(Terminal)
Vcc=13V
Vcc=15V
Vcc=17V
Col l ecto r Curre nt : Ic ( A)
Coll ector-Emitter vo lta g e : Vce ( V)
0
10
20
30
40
50
60
00.511.522.53
C o llector cu rren t vs. Co ll ec tor- Emitte r vo lt ag e
Tj=125°C(Chip)
Vcc=13V
Vcc=15V
Vcc=17V
Colle ctor C u rre nt : Ic (A)
Coll ector-Emitter vo lta g e : Vce ( V)
0
10
20
30
40
50
60
00.511.522.53
Collector current vs. Collector-Emitter voltage
Tj=125°C(Terminal)
Vcc=13V
Vcc=15V
Vcc=17V
Colle ctor C u rre nt : Ic (A)
Coll ector-Emitter vo lta g e : Vce ( V)
0
20
40
60
80
100
00.511.522.5
Forward current vs. Forward voltage
(Chip)
125°C 25°C
F o rw ard Cu rr ent : If (A)
Forw ard voltage : Vf (V)
0
20
40
60
80
100
00.511.522.5
Forward current vs. Forward voltage
(Terminal)
125°C 25°C
Fo rward Cur rent : If ( A)
Forw ard voltage : Vf (V)
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7MBP50TEA060 IGBT-IPM
0
1
2
3
4
5
6
0 102030405060
Switching Loss vs.Collector Current
Edc=300V,Vcc=15V,Tj=25°C
Eon
Eoff
Err
Sw itching l os s : Eon,Eoff,Er r (mJ /cycle)
Col lec tor cu rren t : Ic (A)
0
1
2
3
4
5
6
0 102030405060
Switching Loss vs.Collector Current
Edc=300V,Vcc=15V,Tj=125°C
Eon
Eoff
Err
Switch in g loss : Eon,Eoff,Er r (m J/cycle)
Col lec tor cu rren t : Ic (A)
0
50
100
150
0 100 200 300 400 500 600 700
Reversed biased safe operating area
Vcc=15V,Tj≦125°C
C ol lecto r current : Ic ( A)
Coll ector-Em itter voltage : Vce (V)
RB SO A( Repeti tiv e p uls e)
0.01
0.1
1
0.001 0.01 0.1 1
Transien t therm al resistance
Thermal resistance : Rth(j-c) (°C/W)
Pulse width :Pw (sec)
FWD
IGBT
0
50
100
150
0 20 40 60 80 100 120 140 160
Power derating for IGBT
(per device)
Collecter Power D issip ation : Pc (W )
Cas e Tem perature : Tc ( °C)
0
50
100
150
0 20 40 60 80 100 120 140 160
Power derating for FWD
(per device)
Collecter Power Dissipation : Pc (W)
Cas e Tem perature : Tc ( °C)
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7MBP50TEA060 IGBT-IPM
10
100
1000
10000
20 30 40 50 60 70 80
Swit chin g time vs . Collec tor cu rren t
Edc=300V,Vcc=15V,Tj=25°C
Sw itching tim e : ton ,to ff,tf (n Se c)
Col lector cu rren t : Ic (A)
toff
ton
tf
10
100
1000
10000
20 30 40 50 60 70 80
S witching tim e vs . Collec to r cu rrent
Edc=300V,Vcc=15V,Tj=125°C
Sw itc h ing tim e : ton ,to ff,tf (n Se c)
Col lector cu rren t : Ic (A)
toff
ton
tf
1
10
100
20 30 40 50 60 70 80
Revers e recovery characteristics
trr, Irr vs.IF
R everse rec overy current:Irr(A)
Reverse recovery time:trr(nse c)
F o rward current:IF ( A)
trr125°C
trr25°C
Irr125°C
Irr25°C
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7MBP50TEA060 IGBT-IPM
Characteristics
Dynamic Brake Characteristics (Respresentative)
0
10
20
30
40
50
60
00.511.522.53
C ollector cu rr en t vs . C ollec tor- E mitter voltag e
Tj=25°C
Vcc=13V
Vcc=15V
Vcc=17V
Col l ecto r Curre nt : Ic ( A)
Coll ector-Emitter vo lta g e : Vce ( V)
0
10
20
30
40
50
60
00.511.522.53
C ollector cu rren t vs. C ollector-E mitter voltag e
Tj=125°C
Vcc=13V
Vcc=15V
Vcc=17V
Collector Cu rrent : Ic (A)
Coll ector-Emitter vo lta g e : Vce ( V)
0.01
0.1
1
0.001 0.01 0.1 1
Transien t therm al resistance
Th erm al res istan ce : R th(j-c) (°C /W )
Pulse width :Pw (sec)
IGBT
0
20
40
60
80
100
0 100 200 300 400 500 600 700
Reversed biased safe operating area
Vcc=15V,Tj≦
125°C
C ol lecto r current : Ic (A )
Coll ector-Em itter voltag e : Vce (V)
RBSOA(Repetitive pu lse)
0
50
100
150
0 20 40 60 80 100 120 140 160
Power derating for IGBT
(per device)
Collecter Power Dissipation : Pc (W)
Cas e Tem perature : Tc ( °C)
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