TND316S
No. A0422-1/5
Features
Inverter buffer.
Monolithic structure (High voltage CMOS process adopted).
Withstand voltage of 25V is assured.
Wide range of operating voltage : 4.5V to 25V.
Peak output current : 1A.
Fast switching time (30ns typical at 1000pF load).
Fully compatible input to TTL / CMOS (VIH=up to 2.6V, at VDD=4.5 to 25V).
Built-in input pull-down resistance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Supply Voltage VDD 0 to 25 V
Input Voltage VIN GND--0.3 to VDD+0.3 V
Allowable Power Dissipation PD max 0.3 W
Junction Temperature Tj --55 to +150 °C
Storage Temperature Tstg --55 to +150 °C
Recommended Operating Conditions at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Operating Supply Voltage VDD 4.5 to 25 V
Operating Temperature Topr --40 to +125 °C
Electrical Characteristics (AC Characteristics) at Ta=25°C, VDD=18V, VIN=5V
Ratings
Parameter Symbol Conditions min typ max Unit
Turn-On Rise Time trCL=1000pF 30 45 ns
Turn-Off Fall Time tfCL=1000pF 30 45 ns
Delay T ime tD1C
L=1000pF 30 45 ns
tD2C
L=1000pF 45 60 ns
SANYO Semiconductors
DATA SHEET
D0606IP TI IM TB-00001536
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
TND316S
ExPD (Excellent Power Device)
General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive,
Switching Power Supply, and DC / DC Converter Applications
Ordering number : ENA0422
TND316S
No. A0422-2/5
Electrical Characteristics (DC Characteristics) at Ta=25°C, VDD=4.5 to 25V
Ratings
Parameter Symbol Conditions min typ max Unit
Logic “1” Input Voltage VIH 2.6 V
Logic “0” Input Voltage VIL 0.8 V
Logic “1” Input Bias Current IIN+V
IN=VDD=25V 40 100 µA
Logic “0” Input Bias Current IIN-- VIN=0V or VDD --1 1 µA
High Level Output Voltage VOH IO=0A VDD--0. 1 V
Low Level Output Voltage VOL IO=0A 0.1 V
VDD Supply Current Isupp VDD=10V, VIN=3V, (both inputs) 1.0 4.5 mA
VDD=10V, VIN=0V, (both inputs) 0.2 mA
Output High Short Circuit Pulse Current IO+V
DD=18V, PW10µs, VOUT=0V 1.0 A
Output Low Short Circuit Pulse Current IO-- VDD=18V, PW10µs, VOUT=18V 1.0 A
Output On Resistance ROUT VDD=18V, Iload=10mA, VOUT=“H” 8 12
VDD=18V, Iload=10mA, VOUT=“L” 6 10
Package Dimensions
unit : mm (typ)
7005-007
Block Diagram
14
58
5.0
4.4
6.0 0.3
1.5
1.8 MAX
0.1
0.595 1.27
0.2
0.43
1 : NC
2 : IN A
3 : GND
4 : IN B
5 : OUT B
6 : VDD
7 : OUT A
8 : NC
SANYO : SOP8
VDD
IN OUT
INVERTING
NON-INVERTING
GND
TND316S
No. A0422-3/5
Switching Time Test Circuit
90%
INPUT
INPUT RISE
AND FALL
TIMES=5ns
INVERTING
OUTPUT
NONINVERTING
OUTPUT
90%90%
10%
10%
10%
+5V
+0.4V
+18V
0V
+18V
0V
0.1µF
OUTPUT A
1000pF
1000pF
OUTPUT B
INPUT A
INPUT B
4.7µF
tr
tf
tD1tD2
VDD=18V
TND316S
10%
10%
90%
90%
trtf
tD1tD2
051015 20 25 30
10
20
30
40
50
60
15
20
25
30
35
40
45
50
--50 0 50 100 150
10
20
30
40
50
60
70
15
20
25
30
35
40
45
50
IT05648
tr -- Tc
Case Temperature, Tc -- °C
Turn-On Rise Time, tr -- ns
051015 20 25 30
IT05649
Supply Voltage, VDD -- V
Turn-On Rise Time, tr -- ns
VDD=18V
VIN=5V
CL=1000pF
VIN=5V
CL=1000pF
tr -- VDD
IT05650
tf -- Tc
Case Temperature, Tc -- °C
Turn-Off Fall Time, tf -- ns
IT05651
Supply Voltage, VDD -- V
Turn-Off Fall Time, tf -- ns
VDD=18V
VIN=5V
CL=1000pF
VIN=5V
CL=1000pF
tf -- VDD
--50 0 50 100 150
TND316S
No. A0422-4/5
0.4
0.6
0.8
1.0
1.2
1.4
--50 0 50 100 150
IT05657
IO(--) -- Tc
Case Temperature, Tc -- °C
VDD=18V
0.4
0.6
0.8
1.0
1.2
1.4
--50 0 50 100 150
IT05656
Case Temperature, Tc -- °C
IO(+) -- Tc
VDD=18V
20
25
30
35
40
45
50
051015 20 25 30
10
20
30
40
50
60
70
80
90
100
--50 0 50 100 150
0
10
15
20
25
30
35
40
45
50
--50 0 50 100 150
IT05652
tD1 -- Tc
Case Temperature, Tc -- °C
Delay T ime, tD1 -- ns
IT05653
Supply Voltage, VDD -- V
Delay T ime, tD1 -- ns
VDD=18V
VIN=5V
CL=1000pF
VIN=5V
CL=1000pF
tD1 -- VDD
IT05654
tD2 -- Tc
Case Temperature, Tc -- °C
Delay T ime, tD2 -- ns
VDD=18V
VIN=5V
CL=1000pF
Output "High" Short Circuit
Pulse Current, IO(+) -- A
Output "Low" Short Circuit
Pulse Current, IO(--) -- A
Output "High / Low" Short Circuit
Pulse Current, IO(±) -- A
IO(±) -- VDD
Supply Voltage, VDD -- V
0020406080100 120 140 160
00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
IT03760
PD -- Ta
Allowable Power Dissipation, PD -- W
Ambient Temperature, Ta -- °C
0
0.5
1.0
1.5
2.5
2.0
051015 20 25 30
IT11084
VIN=5V
CL=10µF
tD2 -- VDD
Delay T ime, tD2 -- ns
Supply Voltage, VDD -- V
0
20
40
60
80
100
120
160
140
051015 20 25 30
IT08459
VIN=5V
CL=1000pF
TND316S
No. A0422-5/5
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic
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or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
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PS
This catalog provides information as of December, 2006. Specifications and information herein are subject
to change without notice.