PD - 95259 IRF9956PbF l l l l l l l HEXFET(R) Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 30V RDS(on) = 0.10 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Recommended upgrade: IRF7303 or IRF7313 Lower profile/smaller equivalent: IRF7503 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Symbol Maximum VDS V GS 30 20 3.5 2.8 16 1.7 2.0 1.3 44 2.0 0.20 5.0 -55 to + 150 ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Units V A W mJ A mJ V/ ns C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Symbol Limit Units RJA 62.5 C/W 09/21/04 IRF9956PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 1.0 Typ. 0.015 0.06 0.09 12 6.9 1.0 1.8 6.2 8.8 13 3.0 190 120 61 Max. Units Conditions V V GS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.10 V GS = 10V, ID = 2.2A 0.20 V GS = 4.5V, ID = 1.0A V V DS = V GS, ID = 250A S V DS = 15V, ID = 3.5A 2.0 V DS = 24V, VGS = 0V A 25 V DS = 24V, VGS = 0V, TJ = 125C 100 V GS = 24V nA -100 V GS = -24V 14 I D = 1.8A 2.0 nC V DS = 10V 3.5 V GS = 10V, See Fig. 10 12 V DD = 10V 18 I D = 1.0A ns 26 R G = 6.0 6.0 R D = 10 V GS = 0V pF V DS = 15V = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS I SM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units 1.7 16 0.82 27 28 1.2 53 57 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.25A, VGS = 0V TJ = 25C, IF = 1.25A di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 22mH RG = 25, IAS = 2.0A. ISD 2.0A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. D S IRF9956PbF 100 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 3.0V 20s PULSE WIDTH TJ = 25C A 1 0.1 1 10 3.0V 20s PULSE WIDTH TJ = 150C A 1 10 0.1 1 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 ISD , Reverse Drain Current (A) 100 I D , Drain-to-Source Current (A) 10 VDS , Drain-to-Source Voltage (V) TJ = 25C 10 TJ = 150C V DS = 10V 20s PULSE WIDTH 1 3.0 3.5 4.0 4.5 5.0 5.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics A 6.0 10 TJ = 150C TJ = 25C 1 VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 VSD , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage A 1.4 R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 RDS (on) , Drain-to-Source On Resistance () IRF9956PbF ID = 2.2A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 0.12 0.10 0.08 VGS = 10V 0.06 0.04 80 100 120 140 160 0 TJ , Junction Temperature ( C) 0.12 0.10 0.08 I D = 3.5A 0.06 0.04 0.02 0.00 A 9 12 V GS , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 15 E AS , Single Pulse Avalanche Energy (mJ) RDS (on) , Drain-to-Source On Resistance () 0.14 6 4 6 8 10 12 A Fig 6. Typical On-Resistance Vs. Drain Current 0.16 3 2 I D , Drain Current (A) Fig 4. Normalized On-Resistance Vs. Temperature 0 VGS = 4.5V 100 TOP BOTTOM 80 ID 0.89A 1.6A 2.0A 60 40 20 A 0 25 50 75 100 125 Starting T J , Junction Temperature (C) Fig 8. Maximum Avalanche Energy Vs. Drain Current 150 IRF9956PbF 350 250 VGS , Gate-to-Source Voltage (V) 300 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd Ciss Coss 200 150 Crss 100 50 0 A 1 10 100 ID = 1.8A VDS = 10V 16 12 8 4 0 0 2 4 6 8 10 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 IRF9956PbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D 5 A 8 7 6 5 6 H 0.25 [.010] 1 6X 2 3 A 4 e e1 MAX MIN .0532 .0688 1.35 1.75 C A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 B ASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 y 0.10 [.004] 0.25 [.010] MAX K x 45 A 8X b MILLIMETERS MIN A E INCHES DIM B A1 8X L 8X c 7 C A B F OOTPRINT NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER IRF9956PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04