SMD Schottky Barrier Diode SMD Diodes Specialist CDBUR0230L (RoHs Device) Io = 200 mA V R = 30 Volts 0603(1608) Features 0.071(1.80) 0.063(1.60) Low forward voltage. Designed for mounting on small surface. 0.039(1.00) 0.031(0.80) Extremely thin / leadless package. Majority carrier conduction. Mechanical data 0.033(0.85) Case: 0603(1608) standard package, molded plastic. 0.027(0.70) 0.018(0.45) Typ. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any 0.028(0.70) Typ. Weight: 0.003 gram(approx.). Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Conditions Repetitive peak reverse voltage Symbol Min Typ Max Unit V RRM 35 V Reverse voltage VR 30 V Average forward current IO 200 mA I FSM 1 A Forward current,surge peak 8.3ms single half sine-wave superimposed on rate load(JEDEC method) Storage temperature T STG Junction temperature Tj -40 +125 O +125 O C C Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Conditions Symbol Min Typ Max Unit Forward voltage I F = 200 mA VF 0.5 V Reverse current V R = 10 V IR 30 uA REV:A QW-A1066 Page 1 SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBUR0230L) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1m 1000 Reverse current ( A ) C O O C 25 -25 7C 5 1 O O C 10 152 Forward current (mA ) O 100 75 C 100u 10u O 25 C 1u 100n O -25 C 0 10n 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 5 10 15 20 25 Forward voltage (V) Reverse voltage (V) Fig.3 - Capacitance between terminals characteristics Fig.4 - Current derating curve 30 100 f = 1 MHz Ta = 25 C Average forward current(%) Capacitance between terminals ( P F) 0 10 100 80 60 40 20 0 1 0 5 10 15 20 Reverse voltage (V) 25 30 0 25 50 75 100 125 O Ambient temperature ( C) REV:A QW-A1066 Page 2