IRKH161-12 - International Rectifier

135 A

140 A

160 A

THYRISTOR/ DIODE and

THYRISTOR/ THYRISTOR

Bulletin I27101 rev. B 04/98

IRK. SERIES

INT-A-pakä Power Modules

www.irf.com

IT(AV) 135 140 160 A

@ TC85 85 85 °C

IT(RMS) 300 310 355 A

ITSM @ 50Hz 3200 4750 5100 A

@ 60Hz 3360 5000 5350 A

I2t @ 50Hz 51.5 113 131 KA2s

@ 60Hz 47 103 119 KA2s

I2√t 515 1130 1310 KA2√s

VDRM / VRRM up to 1600 up to 2000 up to 1600 V

TJrange - 40 to 130 - 40 to 125 °C

Major Ratings and Characteristics

Features

High voltage

Electrically isolated base plate

3000 VRMS isolating voltage

Industrial standard package

Simplified mechanical designs, rapid assembly

High surge capability

Large creepage distances

UL E78996 approved

Description

These series of INT-A-paks modules uses high voltage

power thyristors/ diodes in seven basic configurations.

The semiconductors are electrically isolated from the

metal base, allowing common heatsinks and compact

assemblies to be built. They can be interconnected to

form single phase or three phase bridges or as AC-

switches when modules are connected in anti-parallel.

These modules are intended for general purpose applica-

tions such as battery chargers, welders and plating

equipment and where high voltage and high current are

required (motor drives, U.P.S., etc.).

Parameters Units

IRK.135.. IRK.141.. IRK.161..

IRK.136.. IRK.142.. IRK.162..

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IRK.135, .136, .141, .142, .161, .162 Series

Bulletin I27101 rev. A 09/97

www.irf.com

IT(AV) Max. average on-state current 135 140 160 A 180° conduction, half sine wave

@ Case temperature 85 85 85 °C

IT(RMS) Max. RMS on-state current 300 310 355 A as AC switch

ITSM Maximum peak, one-cycle 3200 4750 5100 A t = 10ms No voltage

on-state, non-repetitive 3360 5000 5350 t = 8.3ms reapplied

surge current 2700 4000 4300 t = 10ms 100% VRRM

2800 4200 4500 t = 8.3ms reapplied Sine half wave,

I2t Maximum I2t for fusing 51.5 113 131 KA2s t = 10ms No voltage Initial TJ = TJ max.

47 103 11 9 t = 8.3ms reapplied

36 80 92 t = 10ms 100% VRRM

33 73 84 t = 8.3ms reapplied

I2√t Maximum I2√t for fusing 515 1130 1310 KA2√s t = 0.1 to 10ms, no voltage reapplied

VT(TO)1 Low level value of threshold 0.98 0.75 0.79 V (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.

voltage

VT(TO)2 High level value of threshold 101 0.86 0.92 (I > π x IT(AV)), @ T J max.

voltage

rt1 Low level value on-state 1.62 0.92 0.64 mΩ(16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.

slope resistance

rt2 High level value on-state 1.56 0.77 0.49 (I > π x I T(AV)), @ T J max.

slope resistance

VFM Maximum forward voltage drop 1.66 1.32 1.26 V IFM = π x IF(AV), TJ = max., 180°conduction

Av. power = VF(TO) x IF(AV) + rf x (IF(RMS))2

IHMaximum holding current 500 mA Anode supply = 12V initial IT = 30A, TJ = 25°C

ILMaximum latching current 30 0 mA Anode supply = 12V resistive load = 1Ω gate

pulse: 10V, 100µs, TJ = 25°C

Parameter Units Conditions

IRK.135. IRK.141. IRK.161.

IRK.136. IRK.142. IRK.162.

Forward Conduction

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Type number Voltage VRRM, maximum repetitive VRSM, maximum non-repetitive IRRM max.

Code peak reverse voltage peak reverse voltage @ 150°C

VVmA

IRK.135, IRK.136 04 4 0 0 5 0 0 5 0

IRK.161, IRK.162 08 8 0 0 9 0 0

12 1200 1300

14 1400 1500

16 1600 1700

IRK.141, IRK.142 08 8 0 0 9 0 0 5 0

12 1200 1300

16 1600 1700

18 1800 1900

20 2000 2100

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IRK.135, .136, .141, .142, .161, .162 Series

Bulletin I27101 rev. A 09/97

www.irf.com

IRRM Maximum peak reverse and 50 m A TJ = 150oC

IDRM off-state leakage current

VINS RMS isolation voltage 3000 V 50Hz, circuit to base, all terminals shorted,

t = 1s

dv/dt critical rate of rise of off-state 1000 V/µs TJ = TJ max., exponential to 67% rated VDRM

voltage

IRK.135. IRK.141. IRK.161.

IRK.136. IRK.142. IRK.162.

tdTypical delay time 2. 0 1 . 0 1 . 0 µs TJ = 25oC Gate Current = 1A dIg/dt= 1A/µs

trTypical rise time 3. 0 2 . 0 2. 0 µs TJ = 25oC Vd = 0,67% VDRM

tqTypical turn-off time 50 - 150 µs ITM = 300 A; -dI/dt = 15 A/µs; T J = TJ max

Vr = 50 V; dV/dt = 20 V/µs; Gate 0 V, 100 Ω

IRK.135. IRK.141. IRK.161.

IRK.136. IRK.142. IRK.162.

Blocking

Thermal and Mechanical Specifications

TJMax. junction operating -40 to 130 -40 to 150 °C

temperature range

Tstg Max. storage temperature -40 to 150 °C

range

RthJC Max. thermal resistance, 0.20 0.17 0.17 K/W DC operation, per junction

junction to case

RthCS Max. thermal resistance, 0.035 K/W Mounting surface smooth, flat and greased

case to heatsink Per module

T Mounting IAP to heatsink 4 to 6 N m

torque ± 10% busbar to IAP 4 to 6

wt Approximate weight 500 (17.8) g (oz)

A mounting compound is recommended and the

torque should be rechecked after a period of 3

hours to allow for the spread of the compound.

Lubricated threads.

IRK.135. IRK.141. IRK.161.

IRK.136. IRK.142. IRK.162.

Parameter Units Conditions

Switching

Triggering

PGM Max. peak gate power 5 10 10 W tp ≤ 5ms, TJ = TJ max.

PG(AV) Max. average gate power 1 2 2 W f=50Hz, TJ = TJ max.

IGM Max. peak gate current 2 3 3 A tp ≤ 5ms, TJ = TJ max.

-VGT Max. peak negative 5 5 5 V

gate voltage

VGT Max. required DC gate 4.0 4.0 4.0 V TJ = - 40°C Anode supply = 12V, resistive

voltage to trigger 3.0 3.0 3.0 TJ = 25°C load; Ra = 1Ω

2.0 2.0 2.0 TJ = TJ max.

IGT Max. required DC gate 350 350 350 TJ = - 40°C Anode supply = 12V, resistive

current to trigger 200 200 200 mA TJ = 25°C load; Ra = 1Ω

100 100 100 TJ = TJ max.

VGD Max. gate voltage 0.25 0.30 0.30 V @ TJ = TJ max., rated VDRM

applied

that will not trigger

IGD Max. gate current 10 10 10 mA

that will not trigger

di/dt Max. rate of rise of 300 500 500 A/µs @ TJ = TJ max., ITM

= 400A rated VDRM applied

turned-on current

Parameter Units Conditions

IRK.135. IRK.141. IRK.161.

IRK.136. IRK.142. IRK.162.

Parameter Units Conditions

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IRK.135, .136, .141, .142, .161, .162 Series

Bulletin I27101 rev. A 09/97

www.irf.com

3 x IRKL...

3 x IR K H ...

3 x IRK T...

Current-Source Inverters (also known as Sequentially

Commutated Inverters) use Phase Control (as op-

posed to Fast) Thyristors and Diodes.

The advantages of Current Source Inverters lie in their

ease control, absence of large commutation induc-

tances and limited fault currents.

Their simple construction, illustrated by the circuit on

the left, is further enhanced by the use of INT-A-paks

which allow the power circuit of an Inverter to be

realised with 6 capacitors and 9 INT-A-paks all mounted

on just one heatsink.

The optimal design of Current Source Inverters re-

quires the use of Diodes with blocking voltages greater

than those of the thyristors .

This departure from conventional half-bridge modules

is catered for by INT-A-pak range with Thyristors up to

2000V and Diodes up to 3200V.

Current Source Inverters

Current Source Inverter using 9 INT-A-paks

Thyristor Diode IT(AV) / IF(AV) @ TC

VDRM VRSM VRRM 135A 140A 160A

VRRM VRSM @ 85°C @ 85°C @ 85°C

1400 1500 2000 IRKH135-14D20 IRKH141-14D20 IRKH161-14D20

IRKH136-14D20 IRKH142-14D20 IRKH162-14D20

1400 1500 2000 IRKL135-14D20 IRKL141-14D20 IRKL161-14D20

IRKL136-14D20 IRKL142-14D20 IRKL162-14D20

1600 1700 2500 IRKH135-16D25 IRKH141-16D25 IRKH161-16D25

IRKH135-16D25 IRKH141-16D25 IRKH162-16D25

1600 1700 2500 IRKL136-16D25 IRKL142-16D25 IRKL161-16D25

IRKL136-16D25 IRKL142-16D25 IRKL162-16D25

1800 1900 2800 Not Available IRKH141-18D28 Not Available

Not Available IRKL141-18D28 Not Available

1800 1900 2800 Not Available IRKL142-18D28 Not Available

Not Available IRKL142-18D28 Not Available

2000 2100 3200 Not Available IRKH141-20D32 Not Available

Not Available IRKH142-20D32 Not Available

2000 2100 3200 Not Available IRKL141-20D32 Not Available

Not Available IRKL142-20D32 Not Available

INT-A-paks Suitable for Current Source Inverters

Application Notes

For all other parameters and characteristics refer to standard IRKH... and IRKL... modules.

Sinusoidal conduction @ T J max. Rectangular conduction @ TJ max.

Devices Units

180o120o90o60o30o180o120o90o60o30o

IRK.135, IRK.136 0.016 0.019 0.024 0.035 0.060 0.011 0.019 0.026 0.037 0.060 K/W

IRK.141, IRK.142 0.016 0.019 0.025 0.036 0.060 0.012 0.020 0.027 0.037 0.060

IRK.161, IRK.162 0.015 0.019 0.024 0.036 0.060 0.012 0.020 0.027 0.037 0.060

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)

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IRK.135, .136, .141, .142, .161, .162 Series

Bulletin I27101 rev. A 09/97

www.irf.com

IRK T 16 2 - 16 D25 N

1 2 3

1- Module type

2- Circuit configuration

3- Current rating: IT(AV) x 10 rounded

For IRK.13. only

5 = option with spacers and longer terminal screws

6 = option with standard terminal screws

For IRK.14. and IRK.16. only

1 = option with spacers and longer terminal screws

2 = option with standard terminal screws

5- Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)

6- Current Source Inverters types (See Table)

7- None = Standard devices

N = Aluminum nitrade substrate

Device Code

Ordering Information Table

56 7

- All dimensions in millimeters (inches)

- Dimensions are nominal

- Full engineering drawings are available

on request

- UL identification number for gate and

cathode wire: UL 1385

- UL identification number for package:

UL 94V0

Outline Table

For all types A B C D E

IRK...5 & ...1 25 (0.98) ---- ---- 41 (1.61) 47 (1.85)

IRK...6 & ...2 23 (0.91) 30 (1.18) 36 (1.42) ---- ----

IRKT... IRKH... IRKL... IRKU... IRKV... IRKK... IRKN...

NOTE: To order the Optional Hardware see Bulletin I27900

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IRK.135, .136, .141, .142, .161, .162 Series

Bulletin I27101 rev. B 04/98

www.irf.com

Fig. 4 - On-state Power Loss CharacteristicsFig. 3 - On-state Power Loss Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

100

110

120

130

0 20 40 60 80 100 120 140

30°60° 90° 120°180°

Av er ag e On-state C ur ren t (A)

Maximum Allowable Case Temper ature (°C)

Conduction Ang le

IR K.13 6. . Seri es

R (DC) = 0.2 0 K/W

thJC

100

110

120

130

0 50 100 150 200 250

30°60°90°

120°180°

Av erage On-stat e C urrent (A)

M a xi mu m Allowa ble C as e T emp e r a tu re (°C)

Con du ction Period

IRK. 13 6.. Seri es

R (DC) = 0.20 K/W

thJC

100

125

150

175

200

225

0 20 40 60 80 100 120 140 160

RMS Limit

Con d uction Angle

180°

120°

90°

60°

30°

Ma ximum A ver age On-s tate Pow er Loss (W)

Av er ag e On-s t ate Cur ren t (A)

IRK.136.. Seri e s

Per Junc tion

T = 130°C

100

150

200

250

300

0 50 100 150 200 250

180°

120°

90°

60°

30° RMS Limit

Cond ucti on Period

Maximum Average On-st ate Pow er Loss (W)

Average On-state Current (A)

IRK.136.. S eries

Per Ju nction

T = 130°C

1250

1500

1750

2000

2250

2500

2750

3000

110100

Number Of Equ al Amplitude Half Cycle Curren t Pulses (N)

Peak Half S ine Wave On-st ate Current (A )

IRK.136.. Series

Per Junction

Initial T = 130°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

A t Any Rated Load Condition A nd With

Rated V Applied Fo llow ing S urge.

RRM

1250

1500

1750

2000

2250

2500

2750

3000

3250

0.01 0.1 1

Peak Half Si ne Wave On-s tat e Current (A)

P ulse T rain Dur ation (s)

Maximum Non R e petit ive Surge Current

Versus Pulse Train Duration. Co nt rol

Of C ond u ction May No t Be M aintai n ed.

I nitia l T = 130°C

No Vol tage Reappl ied

Rated V Reapplied

RRM

IRK.136.. Seri es

Per Junction

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IRK.135, .136, .141, .142, .161, .162 Series

Bulletin I27101 rev. B 04/98

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Fig. 8 - On-state Power Loss Characteristics

Fig. 7 - On-state Power Loss Characteristics

Fig. 9 - On-state Power Loss Characteristics

0 20 40 60 80 100 120 140

Maxi mum Allowable Ambient Tempe rature (°C)

1 K/W

0.4 K/W

0.3 K/W

0.2 K/W

0.6 K/W

0.12 K/W

0.06 K/W

R = 0.01 K/W - Delta R

thSA

100

150

200

250

300

350

400

0 50 100 150 200 250 300

180°

120°

90°

60°

30°

Total RM S Output C urr e nt (A)

Maximum Total On-state Power Loss (W)

IRK.136.. S e ries

Pe r Modul e

T = 130°C

Cond uction A ng le

0 20 40 60 80 100 120 140

Max imum Allowable Ambient Temperature ( °C)

R = 0.01 K/W - Delta R

thSA

0.04 K/W

0.08 K/W

0.12 K/W

0.16 K/W

0.2 K/W

0.25 K/W

100

200

300

400

500

600

700

800

900

0 50 100 150 200 250 300

Total Output Current (A)

Maximum T otal Power Loss (W)

180°

(Sine)

180°

(Rect)

2 x IRK.136.. Series

Single Phase Bridge

Connected

T = 130°C

0 20 40 60 80 100 120 140

Maximum Allowable Ambient Temperature (°C)

R = 0.01 K/W - Delta R

0.03 K/W

0.05 K/W

0.07 K/W

0.1 K/W

0.14 K/W

0.2 K/W

0.25 K/W

thSA

100

200

300

400

500

600

700

800

900

0 40 80 120 160 200 240 280

Total Output Current (A )

Maximum Total Power Loss (W)

120°

(Rect)

3 x IRK.136.. Seri es

Three Pha se Bridge

Connected

T = 130°C

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IRK.135, .136, .141, .142, .161, .162 Series

Bulletin I27101 rev. B 04/98

www.irf.com

Fig. 10 - On-state Voltage Drop Characteristics

Fig. 15 - On-state Power Loss Characteristics

Fig. 14 - On-state Power Loss Characteristics

Fig. 12 - Current Ratings Characteristics Fig. 13 - Current Ratings Characteristics

Fig. 11 - Reverse Recovery Charge Characteristics

100

1000

10000

0.511.522.533.544.55

T = 25°C

In stanta neous On-state Current ( A)

Instantaneous On-state Voltage (V)

T = 130°C

IRK.136.. Series

P er Ju nct io n

200

300

400

500

600

700

800

900

1000

0 102030405060708090100

Rate Of Fall Of On-state Current - di/dt (A/µs)

I = 500 A

300 A

200 A

50 A

Typical Reverse Rec overy Charge - Qrr (µC)

1 00 A

IR K.13 6.. Series

T = 1 30 °C

100

110

120

130

0 20 40 60 80 100 120 140 160

30°60° 90° 120° 180°

Av er ag e On- st a te Cur ren t (A)

M a xi mu m All ow a bl e Cas e Te m p er a ture ( °C)

Con duct ion Angl e

IRK.142 .. Seri es

R (DC) = 0 .17 K/W

thJC

100

110

120

130

0 50 100 150 200 250

30°60°90°120°180°

Average On-state Curre nt (A)

Ma ximu m Allowab le Cas e Te mpe ratu re (°C)

Con du ction Per iod

IRK.14 2.. Series

R (DC) = 0 . 17 K/W

thJC

100

150

200

250

0 20406080100120140

RMS Limit

Con d uction A ngle

Max imum Aver ag e On-st ate Powe r Lo ss ( W )

Averag e On-state Current (A)

IRK.142.. Serie s

Per Junc tion

T = 1 25 °C

180°

120°

90°

60°

30°

100

150

200

250

300

350

0 50 100 150 200 250

180°

120°

90°

60°

30°

RMS Limit

Con duction Period

M a xim u m Av erag e O n -sta te P o w e r Los s (W)

Average On-state Current (A)

IRK.142.. Serie s

Per Ju nctio n

T = 125°C

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IRK.135, .136, .141, .142, .161, .162 Series

Bulletin I27101 rev. B 04/98

www.irf.com

Fig. 18 - On-state Power Loss Characteristics

Fig. 19 - On-state Power Loss Characteristics

Fig. 16 - Maximum Non-Repetitive Surge Current Fig. 17 - Maximum Non-Repetitive Surge Current

2000

2500

3000

3500

4000

4500

1 10 100

Number Of Equal Amplitude Half Cy cle C urrent Pulses (N)

At Any Rated L oad Condition And With

Rated V Applie d F ollowing Surge .

RRM

Pe ak Half Sine Wave On-state Current (A)

IRK.142.. Series

Per Juncti o n

Initial T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

1500

2000

2500

3000

3500

4000

4500

5000

0.01 0.1 1

P eak Half Sine W ave On -state Current (A )

Pu lse Train Duration (s)

Maxi mu m Non Re p et it i v e S urge C ur r en t

Versus Pulse Train Duratio n. Control

Of Conduction May Not Be Ma in ta i ned.

IRK.142.. Seri es

Per Junction

Initial T = 125°C

No Voltage Reapplied

R ated V Reapplied

RRM

0 255075100125

Maximum Allowable Ambient Tem pe rature (°C)

R = 0.01 K/W - Delta R

0.06 K/W

thSA

0.1 K/W

0.2 K/W

0.3 K/W

0.4 K/W

0.6 K/W

1 K/W

100

150

200

250

300

350

400

450

100 150 200 250 300 350

180°

120°

90°

60°

30°

Tota l R MS O u tp ut Cu r rent ( A)

Maximum Total O n-state Power Loss (W)

Cond uction Ang le

IR K. 14 2 .. Series

Pe r Module

T = 125° C

0 255075100125

Maximum Allo wable Ambi en t T e mper ature ( °C)

R = 0.01 K/W - Delta R

thSA

0.03 K/W

0.05 K/W

0.07 K/W

0.1 K/W

0.16 K/W

0.25 K/W

100

200

300

400

500

600

700

800

900

1000

50 100 150 200 250 300

Total Output Current (A)

Maximum Tot al Power Loss (W)

180°

(Sine)

180°

(Rect)

2 x IRK.142.. Seri es

Single Phase Bridge

Connected

T = 125°C

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IRK.135, .136, .141, .142, .161, .162 Series

Bulletin I27101 rev. B 04/98

www.irf.com

Fig. 20 - On-state Power Loss Characteristics

Fig. 21 - On-state Voltage Drop Characteristics Fig. 22 - Reverse Recovery Charge Characteristics

Fig. 23 - Current Ratings Characteristics Fig. 24 - Current Ratings Characteristics

0 25 50 75 100 125

M a xi mu m Allow a bl e A mbien t Temp e ratur e ( °C)

R = 0.01 K/W - Delta R

thSA

0.03 K/W

0.02 K/W

0.05 K/W

0.07 K/W

0.1 K/W

0.14 K/W

0.25 K/W

200

400

600

800

1000

1200

1400

1600

0 100 200 300 400 500

Total Output Current (A)

Maximum Total Power Loss (W)

120°

(Rect)

3 x IRK.142.. Series

Three Phase Bridge

Connected

T = 125°C

100

1000

10000

0.511.522.533.544.55

T = 25°C

Instantane ous On- sta te C urrent (A)

Instantaneous On-state Volta ge (V)

IRK.142.. Series

Per Junction

T = 125°C

200

400

600

800

1000

1200

1400

0 102030405060708090100

Ra te Of Fall Of O n- sta t e Cu r ren t - di/dt (A/µs)

I = 500 A

30 0 A

200 A

50 A

Typical Reverse Recovery Charge - Qrr (µC)

100 A

I R K.142.. Se r ies

T = 125 °C

100

110

120

130

0 20 40 60 80 100 120 140 160 180

30°60° 90° 120° 180°

Average On-state Current (A)

Maximum Allowabl e Case Temp erature (°C)

Conduction Angle

IRK.162.. Series

R (DC) = 0.17 K/W

thJC

100

110

120

130

0 50 100 150 200 250 300

30°60°90°120°180°

Average On -state Current (A)

Maximum Allowab le Ca se Temp erature (°C)

Cond ucti on Pe riod

I RK.162.. Se ries

R (DC) = 0.17 K/W

thJC

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IRK.135, .136, .141, .142, .161, .162 Series

Bulletin I27101 rev. B 04/98

www.irf.com

Fig. 27 - Maximum Non-Repetitive Surge Current Fig. 28 - Maximum Non-Repetitive Surge Current

Fig. 29 - On-state Power Loss Characteristics

Fig. 26 - On-state Power Loss CharacteristicsFig. 25 - On-state Power Loss Characteristics

100

150

200

250

0 20 40 60 80 100 120 140 160

RMS Limit

Con ducti o n An g le

Maxi mum A ve ra ge On-state Power Loss (W)

Av er ag e On- s tate Cu rr en t (A )

180°

120°

90°

60°

30°

IR K.16 2.. Ser ies

Pe r Junctio n

T = 1 25°C

100

150

200

250

300

350

0 50 100 150 200 250 300

180°

120°

90°

60°

30° RMS Limit

Conduction P eriod

Maximum Average On-state Power Loss (W)

Av er ag e On- s ta te Cu rr ent ( A)

IR K.16 2.. Se ries

Pe r Junction

T = 125°C

2000

2500

3000

3500

4000

4500

5000

110100

Number O f Equal Amplitude Half Cycle Current Pul ses (N)

At Any Rated Load Condition And With

Rated V A pplied F ollowing Surge.

RRM

Pe ak Half Sine W ave On-state Curre nt (A )

IR.162.. Series

Per Juncti on

Initial T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

2000

2500

3000

3500

4000

4500

5000

5500

0.01 0.1 1

Peak Half Si ne Wa ve On -s tate C u rre nt (A)

Pulse Train Duration (s)

Maxim um Non Rep e t itive Surg e C urrent

V ers us P ul se Train Duration. Cont ro l

Of Con d uction M ay N ot Be Mainta i ned.

IRK.162.. Seri es

Pe r Ju nct i o n

I nitia l T = 125 °C

No Vo lt age Reappl ied

Rated V Reapplied

RRM

0 25 50 75 100 125

Maximum Allowable Ambient T emperature (°C)

R = 0.01 K/W - Delta R

thSA

0.04 K/W

0.1 K/W

0.2 K/W

0.3 K/W

0.4 K/W

0.6 K/W

1 K/W

100

150

200

250

300

350

400

450

500

550

0 50 100 150 200 250 300 350 400

180°

120°

90°

60°

30°

Total RMS Outp ut Current (A)

Maximum T otal O n -s ta te Power L oss (W)

Cond uction A ng le

IR K. 162.. Ser ies

Pe r Mod ul e

T = 125°C

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IRK.135, .136, .141, .142, .161, .162 Series

Bulletin I27101 rev. B 04/98

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Fig. 30 - On-state Power Loss Characteristics

Fig. 31 - On-state Power Loss Characteristics

Fig. 32 - On-state Voltage Drop Characteristics Fig. 33 - Reverse Recovery Charge Characteristics

0 255075100125

Maximum Allow ab le Ambient Temperature (°C)

R = 0.01 K/W - Delta R

thSA

0.04 K/W

0.07 K/W

0.1 K/W

0.14 K/W

0.2 K/W

0.25 K/W

100

200

300

400

500

600

700

800

900

0 50 100 150 200 250 300 350

Total Outpu t Current (A)

Maximum Total Power Loss (W)

180°

(Sine)

180°

(Rect)

2 x IRK.162.. Series

Single Ph ase Bridge

Connected

T = 125°C

0 25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

R = 0.01 K/W - Delta R

thSA

0.03 K/W

0.05 K/W

0.07 K/W

0.1 K/W

0.14 K/W

0.2 K/W

0.25 K/W

250

500

750

1000

1250

1500

0 100 200 300 400 500

Total Output Current (A)

Maximum Total Powe r Loss (W)

120°

(Rect)

3 x IRK.162.. Series

Three Phase Bridg e

Connected

T = 125°C

100

1000

10000

0.511.522.533.544.55

T = 25°C

Instantan eous On-state Current (A )

Instantaneous On- stat e Vo ltage (V)

IRK.162.. Series

Per Junction

T = 125°C

200

400

600

800

1000

1200

1400

0 102030405060708090100

Rate Of Fall Of On-state Current - di/dt (A/µs)

I = 500 A

300 A

200 A

50 A

1 00 A

Typica l Reverse Re cove ry Charge - Qrr (µC)

I RK.162.. Series

T = 125 °C

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IRK.135, .136, .141, .142, .161, .162 Series

Bulletin I27101 rev. B 04/98

www.irf.com

Fig. 36 - Gate Characteristics

Fig. 34 - Thermal Impedance ZthJC Characteristics

Fig. 35 - Gate Characteristics

0.001

0.01

0.1

0.0001 0.001 0.01 0.1 1 10 100

Square Wave Pulse Durat ion (s)

thJC

Transient Thermal Impedance Z (K/W)

Per Juncti on

S tea dy St ate Va lu e

R = 0.20 K /W

R = 0.17 K /W

(DC Operation)

thJC

IRK.136.. Series

IRK.142.. Seri es

IRK.162.. Seri es

0.1

100

0.001 0.01 0.1 1 10 100

VGDIGD

(b) (a)

Tj=25 °C

Tj=-40 °C

(1)

(2) (3)

Instant aneous Gate C urrent (A)

Instantaneous G ate Voltage ( V)

a ) Recommended lo ad line for

b) Recommended load line for

<= 30% rated di/dt : 10V, 10oh ms

r a ted di/dt : 20V, 10ohms; tr<=1 µs

tr<= 1 µs

Rectangular gate pulse

(1) P GM = 60W, tp = 0 .66ms

(2) PGM = 40W , tp = 1ms

(3) PGM = 20W , tp = 2ms

(4) PGM = 10W , tp = 4ms

IR K.136.. Series Frequen cy Limited b y P G( AV)

Tj =1 30 °C

(4)

0.1

100

0.001 0.01 0.1 1 10 100

VGDIGD

(b)

(a)

Tj=25 °C

Tj=125 ° C

Tj=-40 °C

(1)

(2) (3)

Instantane ous Gate Curre nt (A )

Instantaneous Gate Voltage (V)

a) Reco mmended load line fo r

b) Recommended load lin e for

<= 30% rated di/dt : 10V, 10ohms

rated di/dt : 20V, 10ohms; tr<=1 µs

tr<=1 µs

Rec tangu lar gate p ulse

(1) PGM = 60W, tp = 0.66ms

(2) PGM = 40W, tp = 1ms

(3) PGM = 20W, tp = 2ms

(4) PGM = 10W, tp = 4ms

IR K.1 4 2 .. /I RK. 162 .. Ser i es Fre q u ency Limited by PG ( AV )

(4)

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