APTDF100H170G
APTDF100H170G – Rev 1 June, 2006
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+-AC1
AC2
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VR Maximum DC reverse Voltage
VRRM Maximum Peak Repetitive Reverse Voltage 1700 V
Tc = 25°C 120
IF(A V) Maximum Average Forward
Current Duty cycle = 50% Tc = 55°C 100
IF(RMS) RMS Forward Current 125
IFSM Non-Repetitive Forward Surge Current Tj = 25°C 300
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
AC1
+
AC2
-
VRRM = 1700V
IC = 100A @ Tc = 55°C
Applicatio
n
• Uninterruptible Power Supply (UPS)
• Ind uctio n heati ng
• Welding equipment
• High speed rectifiers
Features
• Ultra fast recovery times
• Soft recovery characteristics
• High blocking voltage
• High current
• Low leakage current
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Benefits
• Outsta ndi ng perfor mance at hi gh freq ue ncy
operation
• Low losses
• Low noise switching
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant
Diode Full Bridge
Power Module
APTDF100H170G
APTDF100H170G – Rev 1 June, 2006
www.microsemi
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com 2 - 3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 2.2 2.5
VF Diode Forward Voltage IF = 100A Tj = 125°C 2.1 V
Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR = 1700V Tj = 125°C 500 µA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 572
trr Reverse Recovery Time
Tj = 125°C 704
ns
Tj = 25°C 20
Qrr Reverse Recovery Charge Tj = 125°C 35 µC
Tj = 25°C 70
IRRM Reverse Recovery Current
IF = 100A
VR = 900V
di/dt = 1000A/µs
Tj = 125°C 100 A
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
RthJC Junction to Case Thermal Resistance 0.35 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 3500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To Heatsink M5 2.5 4.7 N.m
Wt Package Weight 160 g
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APTDF100H170G
APTDF100H170G – Rev 1 June, 2006
www.microsemi
.
com 3 - 3
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
TJ=25°C
TJ=25°C
TJ=125°C
0
50
100
150
200
250
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF, Anode to Cathode Voltage (V)
IF, Forward Current (A)
Forward Current vs Forward Voltage Trr vs. Current Rate of Charge
50 A
100 A
200 A
200
300
400
500
600
700
800
0 1000 2000 3000 4000 5000 6000
-diF/dt (A/µs)
trr, Reverse Recovery Time (ns)
TJ=12 5°C
VR=900V
QRR vs. Current Rate Charge
50 A
100 A
200 A
20
30
40
50
60
70
80
0 1000 2000 3000 4000 5000 6000
-diF/dt (A/µs)
QRR, Reverse Recovery Charge (µC)
TJ=125°C
VR=900V
IRRM vs. Current Rate of Charge
50 A
100 A
200 A
50
100
150
200
250
300
350
400
0 1000 2000 3000 4000 5000 6000
-diF/dt (A/µs)
IRRM, Reverse Recovery Current (A)
TJ=125°C
VR=900V
0
25
50
75
100
125
150
0 25 50 75 100 125 150
Case Temperature (ºC)
IF(AV) (A)
Max. Average Forward Current vs. Case Temp.
Duty Cycle = 0.5
TJ=15 0°C
M icros emi reserve s the rig ht to c ha nge , wi tho ut notice, the s pe cifications and i nfo rmatio n contained he rein
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