BPV11F
www.vishay.com Vishay Semiconductors
Rev. 1.6, 03-May-13 1Document Number: 81505
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon NPN Phototransistor
DESCRIPTION
BPV11F is a silicon NPN phototransistor with high radiant
sensitivity in black, T-1¾ plastic package with base terminal
and daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
• Fast response times
• Angle of half sensitivity: = ± 15°
• Base terminal connected
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Detector for industrial electronic circuitry, measurement
and control
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
12784
PRODUCT SUMMARY
COMPONENT Ica (mA) (deg) 0.5 (nm)
BPV11F 9 ± 15 900 to 980
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPV11F Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector base voltage VCBO 80 V
Collector emitter voltage VCEO 70 V
Emitter base voltage VEBO 5V
Collector current IC50 mA
Collector peak current tp/T = 0.5, tp 10 ms ICM 100 mA
Power dissipation Tamb 47 °C PV150 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t 5 s, 2 mm from body Tsd 260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA 350 K/W
BPV11F
www.vishay.com Vishay Semiconductors
Rev. 1.6, 03-May-13 2Document Number: 81505
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature
0
40
80
120
160
200
PV - Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
100806040200
94 8300
RthJA
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage IC = 1 mA V(BR)CEO 70 V
Collector emitter dark current VCE = 10 V, E = 0 ICEO 150nA
DC current gain VCE = 5 V, IC = 5 mA, E = 0 hFE 450
Collector emitter capacitance VCE = 0 V, f = 1 MHz, E = 0 CCEO 15 pF
Collector base capacitance VCE = 0 V, f = 1 MHz, E = 0 CCBO 19 pF
Collector light current Ee = 1 mW/cm2, = 950 nm, VCB = 5 V Ica 39 mA
Angle of half sensitivity ± 15 deg
Wavelength of peak sensitivity p930 nm
Range of spectral bandwidth 0.5 900 to 980 nm
Collector emitter saturation voltage Ee = 1 mW/cm2, = 950 nm, IC = 1 mA VCEsat 130 300 mV
Turn-on time VS = 5 V, IC = 5 mA, RL = 100 ton 6μs
Turn-off time VS = 5 V, IC = 5 mA, RL = 100 toff 5μs
Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 fc110 kHz
94 8249
20
I
CEO
- Collector Dark Current (nA)
100
40 60 80
T
amb
- Ambient Temperature (°C)
10
10
1
10
2
10
3
10
4
VCE = 10 V
0
0.6
0.8
1.0
1.2
1.4
2.0
20 40 60 80 100
1.6
1.8
λ
94 8239 Tamb - Ambient Temperature (°C)
Ica rel - Relative Collector Current
V
CE
= 5 V
E
e
= 1 mW/cm
2
= 950 nm
BPV11F
www.vishay.com Vishay Semiconductors
Rev. 1.6, 03-May-13 3Document Number: 81505
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 4 - Collector Light Current vs. Irradiance
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 6 - Amplification vs. Collector Current
Fig. 7 - Collector Base Capacitance vs. Collector Base Voltage
Fig. 8 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 9 - Turn-on/Turn-off Time vs. Collector Current
0.01 0.1 1
0.01
0.1
1
10
100
I
ca
- Collector Light Current (mA)
E
e
- Irradiance (mW/cm²)
10
94 8244
V
CE
= 5 V
λ = 950 nm
0.1 1 10
0.1
1
10
100
I
ca
- Collector Light Current (mA)
V
CE
- Collector Emitter Voltage (V)
100
94 8245
Ee = 1 mW/cm
2
λ = 950 nm
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
0.02 mW/cm
2
0.01 0.1 1 10
0
200
400
600
800
B - Amplification
I
C
- Collector Current (mA)
100
94 8250
VCE = 5 V
0.1 1 10
0
4
8
12
16
20
C
CBO
- Collector Base Capacitance (pF)
V
CB
- Collector Base Voltage (V)
100
94 8246
f = 1 MHz
0.1 1 10
0
4
8
12
16
20
CCEO - Collector Ermitter Capacitance (pF)
VCE - Collector Ermitter Voltage (V)
100
94 8247
f = 1 MHz
1612840
94 8253
0
2
4
6
8
12
ton/toff - Turn-on/Turn-off Time (µs)
IC - Collector Current (mA)
10 VCE = 5 V
RL = 100 Ω
λ = 950 nm
toff
ton
BPV11F
www.vishay.com Vishay Semiconductors
Rev. 1.6, 03-May-13 4Document Number: 81505
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 10 - Relative Spectral Sensitivity vs. Wavelength Fig. 11 - Relative Radiant Sensitivity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
800 900 1000 1100
94 8258
0
0.2
0.4
0.6
0.8
1.0
S(λ)rel - Relative Spectral Sensitivity
λ - Wavelength (nm)
Srel - Relative Sensitivity
94 8248
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
0
0.20.4
ϕ - Angular Displacement
Chip position
0.8 + 0.2
- 0.1
Issue:1; 01.07.96
± 0.15
Drawing-No.: 6.544-5188.01-4
specifications
according to DIN
technical drawings
0.5
Area not plane
± 0.15
± 0.3
± 0.5
5.75
± 0.15
0.5
EB
5
± 0.3
+ 0.15
0.8
C
1.5 ± 0.25
- 0.1
+ 0.2
0.8 - 0.1
+ 0.2
- 0.1
+ 0.2
1.27 nom.
2.54 nom.
12.3
(4.55)
7.6
35
< 0.7
8.6
R 2.45 (sphere)
96 12200
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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