CDSW19-G/20-G/21-G
Page 1
QW-B0018
SMD Switching Diode
RoHS Device
Maximum Rating (at Ta=25°C unless otherwise noted)
REV: D
Electrical Characteristics (at Ta=25°C unless otherwise noted)
°C
mW
°C
°C/W
mA
V
V
V
-55 ~ +150
500
150
250
200
141
200
250
TSTG
PD
RθJA
Io
VR(RMS)
VRRM
VRWM
VRM
@ t=8.3ms
Storage temperature
Power dissipation
Thermal Resistance (Junction to ambient)
Non-repetitive peak forward surge current
Average rectified output current
Peak repetitive reverse voltage
Working peak reverse voltage
Non-repetitive peak reverse voltage
Parameter Symbol CDSW19-G CDSW20-G
CDSW21-G
Unit
ns
pF
μA
V
50
5
0.1
0.1
0.1
1.0
1.25
Ctot
IR
VF
tRR
Total capacitance
Reverse current
Forward voltage
Reverse recovery time
Parameter Conditions Symbol Min Typ
Max
Unit
VR=0V, f=1MHZ
VR=100V
VR=150V
VR=200V
IF=100mA
IF=200mA
IF=IR=30mA, Irr=0.1*IR, RL=100Ω
TJ
RMS reverse voltage
Junction temperature
IFSM 2.0 A
120 200
100 150
71 106
CDSW19-G
CDSW20-G
CDSW21-G
Features
- Fast switching speed.
- Surface mount package ideally suited for
- automatic insertion.
- For general purpose switching applications.
Mechanical data
- Case: SOD-123, molded plastic.
- Weight: 0.01 gram(approx.).
Dimensions in inches and (millimeter)
0.152(3.85)
0.140(3.55)
0.049(1.25)
0.041(1.05)
0.018(0.45)
0.004(0.10)
0.110(2.80)
0.102(2.60)
0.067(1.70)
0.059(1.50)
0.026(0.65)
0.018(0.45)
0.006(0.15)
0.003(0.08)
-+
0.000(0.00)
SOD-123
0.010(0.25)
Circuit diagram
Company reserves the right to improve product design , functions and reliability without notice.
- Low reverse current.