MOSFET
RoHS Device
Page 1
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Features
- High-side switching
- Case: SOT-363, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
CJ3139KDW-G (Dual P-Channel )
Dimensions in inches and (millimeter)
QW-BTR52
Comchip Technology CO., LTD.
SOT-363
Maximum Ratings (at Ta=25 °C unless otherwise noted)
Drain-source voltage
Typ. Gate-source voltage
Drain current-Continuous
Power dissipation (note 2)
Junction temperature range
Storage temperature range
Unit
Symbol
Parameter
VDSS
VGS
ID(DC)
PD
RΘJA
TJ
TSTG
Value
-20
±12
-0.66
150
833
-40 to +150
-55 to +150
V
V
A
mW
°C/W
°C
°C
Thermal resistance from junction to ambient
Comchip
S M D D i o d e S p e c i a l i s t
V(BR)DSS RDS(on)MAX ID
-20V
520mΩ @ -4.5V
700mΩ @ -2.5V -0.66A
- Low on-resistance
0.087(2.20)
0.079(2.00)
0.053(1.35)
0.045(1.15)
0.055(1.40)
0.047(1.20)
0.045(1.15)
0.041(1.05)
0.014(0.35)
0.006(0.15)
0.004(0.10) 0.018(0.46)
0.096(2.45)
0.085(2.15)
0.006(0.15)
0.003(0.08)
0.010(0.26)
0.000(0.00)
Company reserves the right to improve product design , functions and reliability without notice.
950mΩ(TYP) @ -1.8V
- Low threshold
- Fast switching speed
G : Gate
S : Source
D : Drain 54
G2 S2
D1
G1 D2
S1
23
1
6
6 5 4
1 2 3
- Weight: 0.006 grams (approx.)
Drain current-pulsed (note1) IDM(pulse) -2.64 A
Circuit diagram
Mechanical data
Drain-source breakdown voltage VGS = 0V , ID = -250µA
Zero gate voltage drain current
Forward transconductance
Reverse transfer capacitance
Input capacitance
Switching time (note4)
Turn-on delay time
Turn-off delay time
Rise time
Fall time
VDS = -20V , VGS = 0V
V = -1.8V , GS ID = -500mA
VDS = -10V , ID = -540mA
VDD = -10V, ID = -200mA
VGS = -4.5V , RG = 10Ω
V(BR) DSS
IDSS
gfs
Coss
Crss
td(on)
tr
td(off)
tf
-20
-1
0.8
9
5.8
32.7
20.3
V
S
pF
nS
ciss 170
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QW-BTR52
Comchip Technology CO., LTD.
MOSFET
Comchip
S M D D i o d e S p e c i a l i s t
Dynamic (note 4)characteristics
Output capacitance 25
15
On/Off States
Electrical Characteristics (at TA=25°C unless otherwise noted)
Company reserves the right to improve product design , functions and reliability without notice.
µA
VDS = -16V , VGS = 0V
f=1MHZ
VDS = VGS , ID = -250µA -1.1 V
-0.35
Gate threshold voltage (note 3) VGS(th)
Gate-body leakage current VGS = ±10V, VDS = 0V
IGSS ±20 µA
RDS(on)
V = -4.5V , GS ID = -1A 520
V = -2.5V , GS ID = -800mA
950
mΩ
700
IS = -0.5A , VGS = 0V
VSD -1.2 V
Drain-source on-state resistance (note 3)
Drain-source diode characteristics
Drain-source diode forward voltage
(note 3)
Parameter Conditions
Symbol Min Typ Max Unit
Notes:
1. Repetitive rating: Pulse width limited by maximum junction temperture.
2. This test is performed with no heat sink at Ta=25°C.
3. Pulse test: Pulse width≤300µs, Duty cycle 0.5%.≤
4. These parameters have no way to verify.
QW-BTR52
RATING AND CHARACTERISTIC CURVES (CJ3139KDW-G)
Comchip Technology CO., LTD.
Page 3
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MOSFET
Comchip
S M D D i o d e S p e c i a l i s t
Drain Current, ID (A)
Gate to Source Voltage, VGS (V)
On-Resistance, RDS(ON) ( Ω )
Gate to Source Voltage, VGS (V)
Fig.4 - RDS(ON) — VGS
On-Resistance, RDS(ON) ( Ω )
Drain Current, ID (A)
Fig.3 - RDS(ON) — ID
-1E-3
Source to Drain Voltage, VSD (V)
-0.4
-3
-0.01
Fig.5 - IS — VSD
-0.8 -1.2 -2.0
-1
-0.1
Fig.2 - Transfer Characteristics
Drain Current, (A) ID
Drain to Source Voltage, VDS (V)
0 -1 -2 -3 -4 -5
-1E-4
ID = -0.8A
-1 -2 -4 -6 -3
0 -0.4 -2.0-0.8
Source Current, Is ( A )
-0 -0.5 -1.0 -2.0 -3.0
0.0
2.0
1.2
0.8
1.6
0
0.4
1.6
2.0
-0.0
-1.2
-0.8
-1.6
-2.0
-0.4
-0.0
-1.5
-1.0
-2.0
-2.5
-0.5
0.8
1.2
Ta=25°C
-1.2 -1.6
-1.6
Company reserves the right to improve product design , functions and reliability without notice.
-3.0
Fig.1 - Output Characteristics
-1.5 -2.5
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
VGS= -3V
VGS= -2.5V
VGS= -1.5V
VGS= -4.5V
VGS= -10V
Ta=25°C
Ta=100°C
Pulsed
VDS= -5V
-5
Pulsed
Threshold Voltage, VTH ( V )
Junction Temperature, TJ (°C)
Fig.6 - Threshold Voltage
25
50
125 75
-0.4
-0.5
-0.7
-0.8
-0.6
100
ID = -250uA
0.4
Reel Taping Specification
B C dD D2D1
SOT-363
SYMBOL
A
(mm)
(inch) 2.142 0.039±
4.00 0.10±
1.50 0.10± 54.40 1.00± 13.00 1.00±
4.00 0.10± 2.00 0.10±
178.00 2.00±
7.008 0.079± 0.512 0.039±
SYMBOL
(mm)
(inch) 0.157 0.004± 0.157 0.004± 0.079 0.004±
E F P P0P1W W1
1.75 0.10±
0.069 0.004±
3.50 0.10±
0.138 0.004±
SOT-363
2.25 ± 0.05
0.089 0.002±
2.55 0.05±
0.100 0.002±
1.20 0.05±
0.047 0.002±
12.30 1.00±
0.484 0.039±
0.059 0.004±
8.00 + 0.30/-0.10
0.315 + 0.012/-0.004
o
120
D1
D2
W1
D
d
F E
B
P1 P0
P A
W
C
MOSFET
Comchip
S M D D i o d e S p e c i a l i s t
Page 4
REV:A
QW-BTR52
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
Page 5
REV:A
Comchip Technology CO., LTD.
QW-BTR52
Marking Code
SIZE
(inch)
0.032
(mm)
0.80
0.40
0.65
0.016
0.026
1.94 0.076
E
2.74
0.108
B
C
D
A
SOT-363
39K
.
1 2 3
6 4
CJ3139KDW-G 39K
Suggested PAD Layout
A
D
C
B
E
5
MOSFET
Part Number Marking Code
Standard Packaging
Case Type
3,000
REEL
( pcs )
Reel Size
(inch)
7
REEL PACK
SOT-363
Company reserves the right to improve product design , functions and reliability without notice.
