Comchip MOSFET SMD Diode Specialist CJ3139KDW-G (Dual P-Channel ) RoHS Device SOT-363 V(BR)DSS RDS(on)MAX 0.087(2.20) 0.079(2.00) ID 520m @ -4.5V -20V 700m @ -2.5V 6 5 4 1 2 3 0.053(1.35) 0.045(1.15) -0.66A 950m(TYP) @ -1.8V 0.055(1.40) 0.047(1.20) 0.006(0.15) 0.003(0.08) 0.045(1.15) 0.041(1.05) 0.096(2.45) 0.085(2.15) Features - High-side switching 0.018(0.46) 0.010(0.26) 0.004(0.10) 0.000(0.00) 0.014(0.35) 0.006(0.15) - Low on-resistance - Low threshold Dimensions in inches and (millimeter) - Fast switching speed Circuit diagram Mechanical data G : Gate S : Source D : Drain - Case: SOT-363, molded plastic. D1 6 G2 S2 4 5 - Terminals: Solderable per MIL-STD-750, method 2026. - Weight: 0.006 grams (approx.) 3 2 1 S1 G1 D2 Maximum Ratings (at Ta=25 C unless otherwise noted) Symbol Value Unit Drain-source voltage VDSS -20 V Typ. Gate-source voltage VGS 12 V Drain current-Continuous ID(DC) -0.66 A IDM(pulse) -2.64 A PD 150 mW RJA 833 C/W Junction temperature range TJ -40 to +150 C Storage temperature range TSTG -55 to +150 C Parameter Drain current-pulsed (note1) Power dissipation (note 2) Thermal resistance from junction to ambient Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR52 Page 1 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist Electrical Characteristics (at T =25C unless otherwise noted) A Parameter Symbol Conditions Min Typ Max Unit On/Off States Drain-source breakdown voltage Gate threshold voltage (note 3) V(BR) DSS VGS = 0V , ID = -250A -20 VGS(th) VDS = VGS , ID = -250A -0.35 V -1.1 V Gate-body leakage current IGSS VGS = 10V, VDS = 0V 20 A Zero gate voltage drain current IDSS VDS = -20V , VGS = 0V -1 A VGS = -4.5V , ID = -1A 520 VGS = -2.5V , ID = -800mA 700 Drain-source on-state resistance (note 3) RDS(on) VGS = -1.8V , ID = -500mA Forward transconductance gfs VDS = -10V , ID = -540mA m 950 0.8 S Dynamic characteristics (note 4) Input capacitance ciss Output capacitance Coss Reverse transfer capacitance Crss 170 VDS = -16V , VGS = 0V 25 f=1MHZ pF 15 Switching time (note4) Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) 9 VDD = -10V, ID = -200mA 5.8 VGS = -4.5V, RG = 10 32.7 nS 20.3 tf Drain-source diode characteristics Drain-source diode forward voltage (note 3) VSD IS = -0.5A , VGS = 0V -1.2 V Notes: 1. Repetitive rating: Pulse width limited by maximum junction temperture. 2. This test is performed with no heat sink at Ta=25C. 3. Pulse test: Pulse width300s, Duty cycle0.5%. 4. These parameters have no way to verify. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR52 Page 2 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist RATING AND CHARACTERISTIC CURVES (CJ3139KDW-G) Fig.2 - Transfer Characteristics Fig.1 - Output Characteristics -2.0 -3.0 VDS = -5V VGS= -10V Pulsed VGS= -4.5V -2.5 -1.6 Ta=25C Drain Current, ID (A) Drain Current, ID (A) VGS= -3V -2.0 VGS= -2.5V -1.5 -1.0 -1.2 Ta=100C -0.8 -0.4 -0.5 VGS= -1.5V -0.0 -0.0 0 -1 -3 -2 -4 -0 -5 -0.5 -1.0 -2.5 2.0 On-Resistance, RDS(ON) ( ) VGS= -1.8V 1.6 1.2 VGS= -2.5V 0.8 0.4 VGS= -4.5V 1.6 1.2 0.8 0.4 0 -0.4 -0.8 -1.2 Ta=25C Pulsed ID = -0.8A 0.0 0 -3.0 Fig.4 - RDS(ON) -- VGS Fig.3 - RDS(ON) -- ID 2.0 On-Resistance, RDS(ON) ( ) -2.0 -1.5 Gate to Source Voltage, VGS (V) Drain to Source Voltage, VDS (V) -1.6 -2.0 -1 Drain Current, ID (A) -3 -2 -4 -5 -6 Gate to Source Voltage, VGS (V) Fig.6 - Threshold Voltage Fig.5 - IS -- VSD -3 -0.8 Threshold Voltage, VTH ( V ) Source Current, Is ( A ) -1 -0.1 -0.01 -1E-3 -1E-4 -0.4 -0.8 -1.2 -1.6 -2.0 -0.7 ID = -250uA -0.6 -0.5 -0.4 25 Source to Drain Voltage, VSD (V) 50 75 100 125 Junction Temperature, TJ (C) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR52 Page 3 Comchip Technology CO., LTD. Comchip MOSFET SMD Diode Specialist Reel Taping Specification P1 W B F E d P0 C A P 12 o 0 D2 D1 D W1 SOT-363 SOT-363 SYMBOL A B C d D D1 D2 (mm) 2.25 0.05 2.55 0.05 1.20 0.05 1.50 0.10 178.00 2.00 54.40 1.00 13.00 1.00 (inch) 0.089 0.002 0.100 0.002 0.047 0.002 0.059 0.004 7.008 0.079 2.142 0.039 0.512 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 0.10 3.50 0.10 4.00 0.10 4.00 0.10 2.00 0.10 8.00 + 0.30/-0.10 12.30 1.00 (inch) 0.069 0.004 0.138 0.004 0.157 0.004 0.157 0.004 0.079 0.004 0.315 + 0.012/-0.004 0.484 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR52 Page 4 Comchip Technology CO., LTD. MOSFET Marking Code 6 Part Number Marking Code CJ3139KDW-G 39K 5 4 39K . 1 2 3 Suggested PAD Layout C SOT-363 SIZE (mm) (inch) A 0.80 0.032 B 0.40 0.016 C 0.65 0.026 D 1.94 0.076 E 2.74 0.108 A D E B Standard Packaging REEL PACK Case Type SOT-363 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR52 Page 5 Comchip Technology CO., LTD.