Preliminary Technical Information TrenchMVTM Power MOSFET IXTC160N10T VDSS ID25 RDS(on) (Electrically Isolated Back Surface) = 100 V = 83 A 7.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M 100 100 V V VGSM Transient 20 V ID25 IL IDM TC = 25C Package Current Limit, RMS TC = 25C, pulse width limited by TJM 83 75 430 A A A IAR EAS TC = 25C TC = 25C 25 500 A mJ dv/dt IS IDM, di/dt 100 A/s, VDD VDSS TJ 175C, RG = 5 3 V/ns PD TC = 25C 140 W -55 ... +175 175 -55 ... +175 C C C 300 260 C C 2500 V 11..65/2.5..15 N/lb. 2 g TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds VISOL 50/60 Hz, t = 1 minute, IISOL < 1 mA, RMS FC Mounting force Weight Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 A 100 VGS(th) VDS = VGS, ID = 250 A 2.5 IGSS VGS = 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) V 4.5 V 200 nA 5 A 250 A TJ = 150C VGS = 10 V, ID = 25 A, Notes 1, 2 6.5 ISOPLUS220 (IXTC) E153432 G D S G = Gate S = Source Isolated back surface D = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier 7.5 m DS99677(11/06) (c) 2006 IXYS CORPORATION All rights reserved IXTC160N10T Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 60 A, Note 1 65 102 S 6600 pF 880 pF Crss 135 pF td(on) 33 ns 61 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A td(off) RG = 5 (External) 49 ns 42 ns 132 nC 37 nC 40 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd RthJC ISOPLUS220 (IXTC) Outline 1.Gate 2. Drain 3.Source Note: Bottom heatsink (Pin 4) is electrically isolated from Pins 1,2, and 3. 1.06C/W RthCS C/W 0.5 Source-Drain Diode Characteristic Values TJ = 25C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 160 A ISM Pulse width limited by TJM 430 A VSD IF = 25 A, VGS = 0 V, Note 1 1.0 V t rr IF = 25 A, -di/dt = 100 A/s 60 ns VR = 30 V, VGS = 0 V Notes: 1. Pulse test: t 300 s, duty cycle d 2 %; 2. Drain and Source Kelvin contacts must be located less than 5 mm from the plastic body. PRELIMINARYTECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTC160N10T Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 160 300 VGS = 10V 9V 8V 140 250 120 225 I D - Amperes I D - Amperes VGS = 10V 9V 8V 275 100 7V 80 60 200 175 7V 150 125 100 6V 40 75 6V 50 20 25 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 0 1 2 3 4 5 6 7 8 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 160A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150C 160 2.8 V GS = 10V 8V 140 VGS = 10V 2.6 2.4 RDS(on) - Normalized I D - Amperes 120 7V 100 80 6V 60 2.2 I D = 160A 2 I D = 80A 1.8 1.6 1.4 1.2 40 1 20 5V 0.8 0 0.6 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 80A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 90 3.2 70 TJ = 175C 2.6 2.4 I D - Amperes RDS(on) - Normalized 2.8 External Lead Current Limit 80 VGS = 10V 15V - - - - 3 2.2 2 1.8 1.6 60 50 40 30 1.4 TJ = 25C 1.2 20 1 10 0.8 0 0.6 0 50 100 150 200 I D - Amperes (c) 2006 IXYS CORPORATION All rights reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTC160N10T Fig. 8. Transconductance Fig. 7. Input Admittance 200 140 180 120 TJ = - 40C 100 25C 160 g f s - Siemens ID - Amperes 140 120 100 80 TJ = 150C 25C - 40C 60 40 80 150C 60 40 20 20 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 20 40 60 VGS - Volts 100 120 140 160 180 200 220 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 300 V DS = 50V 9 250 I D = 25A 8 I G = 10mA 7 200 VGS - Volts IS - Amperes 80 150 TJ = 150C 100 6 5 4 3 TJ = 25C 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0 20 VSD - Volts 60 80 100 120 140 QG - NanoCoulombs Fig. 12. Maxim um Transient Therm al Im pedance Fig. 11. Capacitance 10,000 10.00 C iss f = 1 MHz Z(th)JC - C / W Capacitance - PicoFarads 40 C oss 1,000 1.00 0.10 C rss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse W idth - Seconds 1 10 IXTC160N10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 70 90 RG = 5 80 65 V GS = 10V 60 70 t r - Nanoseconds t r - Nanoseconds V DS = 50V 60 50 TJ = 25C I D = 50A 40 RG = 5 55 V GS = 10V V DS = 50V 50 45 40 TJ = 125C I D = 25A 30 35 20 30 25 35 45 55 65 75 85 95 105 115 25 125 30 35 T J - Degrees Centigrade Fig. 15. Resistiv e Turn-on Switching Times vs. Gate Resistance 65 60 TJ = 125C, V GS = 10V t r - Nanoseconds 90 45 70 40 50 35 30 30 80 RG = 5, V GS = 10V 6 8 10 12 14 16 18 100 65 90 55 85 50 75 40 70 25 35 45 TJ = 125C 80 140 77 130 74 V DS = 50V 65 75 85 95 105 115 60 125 TJ = 25C 65 62 38 40 I D - Amperes (c) 2006 IXYS CORPORATION All rights reserved 45 50 100 145 I D = 50A 90 130 70 100 60 85 50 50 70 47 40 55 44 30 53 TJ = 25C 160 115 56 39 175 110 80 59 TJ = 125C I D = 25A V DS = 50V - Nanoseconds 41 190 TJ = 125C, V GS = 10V d ( o f f ) - Nanoseconds 68 td(off) - - - - tf 120 d(off) 42 205 t 71 t f - Nanoseconds td(off) - - - - t t f - Nanoseconds 55 Fig. 18. Resistive Turn-off Switching Times v s. Gate Resistance RG = 5, V GS = 10V 35 65 I D = 50A 30 T J - Degrees Centigrade tf 30 80 I D = 25A 45 20 44 25 95 I D = 50A 60 Fig. 17. Resistiv e Turn-off Switching Times vs. Drain Current 40 105 70 R G - Ohms 43 110 V DS = 50V I D = 25A 35 4 115 d ( o f f ) - Nanoseconds I D = 25A tf t 50 - Nanoseconds 110 d(on) 55 I D = 50A 120 td(off) - - - - 85 75 t V DS = 50V 130 50 90 td(on) - - - - t f - Nanoseconds 150 45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 170 tr 40 I D - Amperes 40 4 6 8 10 12 14 16 18 20 R G - Ohms IXYS REF: T_160N10T (5V) 11-16-06-A.xls