Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1
Copyright 2000
MSC1665.PDF 2001-02-20
WWW.Microsemi .COM
MS2552
RF & MICROWAVE TRANSISTORS
P
RODUCT
P
REVIEW
RF PRODUCTS DIVISION
DESCRIPTION
DESCRIPTIONDESCRIPTION
DESCRIPTION
The MS2552 device is a high power pulsed transistor specifically
designed for DME/TACAN avionics applications.
This device is capable of withstanding an infinite load VSWR at any phase
angle under full rated conditions. Low RF thermal resistance and semi-
automatic bonding techniques ensure high reliability and product
consistency.
The MS2552 is housed in the industry-standard AMPAC metal/ceramic
hermetic package with internal input/output matching structures.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
KEY FEATURES KEY FEATURES
KEY FEATURES
Refractory/Gold
Metallization
Emitter Ballasted
Ruggedized VSWR ∞ :1
Capability
Input/Output Matching
Overlay Geometry
Metal/Ceramic Hermetic
Package
POUT = 325 W Min.
GP = 6.7 dB Gain
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
APPLICATIONS/BENEFITS
SS
S
Avionics Applications
Applies only to rated RF amplifier operation
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°
°°
°C)
Symbol Parameter Value Unit
PDISS Power Dissipation* (TC ≤ 100°C) 880 W
IC Device Current* 24 A
VCC Collector-Supply Voltage* 55 V
TJ Junction Temperature (Pulsed RF Operation) 250 °C
TSTG Storage Temperature -65 to +150 °C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 0.17 °C/W
M
MS
S2
25
55
52
2
.400 X .400 2NLFL
hermetically sealed
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 2
Copyright 2000
MSC1665.PDF 2001-02-20
WWW.Microsemi .COM
MS2552
RF & MICROWAVE TRANSISTORS
P
RODUCT
P
REVIEW
RF PRODUCTS DIVISION
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°
°°
°C)
MS2552
Symbol Test Conditions
Min. Typ. Max.
Units
BVCBO IC = 10 mA IE = 0 mA 65 V
BVEBO IE = 1 mA IC = 0 V 3.5 V
BVCER IC = 25 mA RBE = 10 Ω 65 V
ICES VBE = 0 V vCE = 50 V 25 mA
hFE VCE = 5 V IC = 1 A 15 120
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25°
°°
°C)
MS2575
Symbol Test Conditions
Min. Typ. Max.
Units
POUT f = 1025 – 1150 MHz PIN = 70 W VCC = 50 V 325 360 W
η
ηη
ηc f = 1025 – 1150 MHz PIN = 70 W VCC = 50 V 40 41 %
GP f = 1025 – 1150 MHz PIN = 70 W VCC = 50 V 6.7 7.1 dB
Note: Pulse width = 10µSec
Duty Cycle = 1%
E
EL
LE
EC
CT
TR
RI
IC
CA
AL
LS
S
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page
3
Copyright 2000
MSC1665.PDF 2001-02-20
WWW.Microsemi .COM
MS2552
RF & MICROWAVE TRANSISTORS
P
RODUCT
P
REVIEW
RF PRODUCTS DIVISION
P
PA
AC
CK
KA
AG
GE
E D
DA
AT
TT
TA
A
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page
4
Copyright 2000
MSC1665.PDF 2001-02-20
WWW.Microsemi .COM
MS2552
RF & MICROWAVE TRANSISTORS
P
RODUCT
P
REVIEW
RF PRODUCTS DIVISION
N
NO
OT
TE
ES
S
