Publication Date : Oct．2011 1
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
DESCRIPTION
RD35HUF2 is MOS FET type transistor specifically
designed for VHF/UHF RF power amplifiers applications.
FEATURES
1. Supply with Tape and Reel. 500 Units per Reel.
2. Employing Mold Package
3. High Power and High Efficiency
Pout=43Wtyp, Drain Effi.=60%typ
@ Vds=12.5V Idq=0.5A Pin=3.0W f=530MHz
Pout=45Wtyp, Drain Effi.=72%typ
@ Vds=12.5V Idq=1.0A Pin=3.0W f=175MHz
4. Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in VHF/UHF
band mobile radio sets.
RoHS COMPLIANT
RD35HUF2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders. (i.e. tin-lead solders alloys containing more than 85% lead.)
24.60
3.63
3.15
18.00
12.69
12.95
6.38
5.56
a
a'
a-a' SECTION
0.10
3.65
2.40
13.40
5.87
3.10
0.22
0.34
○
Lot No.-G
RD35HUF2
RD35HUF2
Lot No.-G
○
3.70
0.10
OUTLINE
DRAWING
4
1
2
3
5
6
7
8
5
6
7
8
Pin 1.
SOURCE (COMMON)
2. OPEN
3. DRAIN
4. SOURCE (COMMON)
5. SOURCE (COMMON)
6. OPEN
7. GATE
8. SOURCE (COMMON)
Unit: mm
1
2
3
4
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
Publication Date : Oct．2011
2
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to Source Voltage Vgs=0V 40 V
VGSS Gate to Source Voltage Vds=0V -5/+10 V
Pch Channel Dissipation Tc=25°C 166 W
Pin Input Power Zg=Zl=50Ω6 W
ID Drain Current - 10 A
Tch Channel Temperature - 175 °C
Tstg Storage Temperature - -40 to +175 °C
Rth j-c Thermal Resistance Junction to Case 0.9 °C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER CONDITIONS MIN TYP MAX.
IDSS* Zero Gate Voltage Drain Current VDS=37V, VGS=0V - - 150 μA
IGSS* Gate to Source Leak Current VGS=10V, VDS=0V - - 2.5 μA
VTH* Gate Threshold Voltage VDS=12V, IDS=1mA 1.6 2.0 2.4 V
Pout1 Output Power - 43 - W
D1 Drain Efficiency f=530MHz*,VDS=12.5V,
Pin=3.0W, Idq=500mA - 60 - %
Pout2 Output Power - 45 - W
D2 Drain Efficiency f=175MHz**,VDS=12.5V,
Pin=3.0W, Idq=500mA - 72 - %
VSWRT Load VSWR Tolerance
All phase, VDS
=16.3V increased after
Pout adjusted to 40W(Zg/Zl=50Ω) by
Pin(under f=135MHz**, VDS=12.5V
and Idq=500mA)
20:1 - - VSWR
Note: Above parameters, ratings, limits and conditions are subject to change.
* In Mitsubishi UHF Evaluation Board ** In Mitsubishi VHF Evaluation Board
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
Publication Date : Oct．2011
3
TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
VDS VS. Ciss Characteristics
0
50
100
150
200
250
300
0 5 10 15 20 25 30 35 40
VDS(V)
Ciss (pF)
Ta=+25℃
f=1MHz
VDS VS. Coss Characteristics
0
50
100
150
200
250
300
0 5 10 15 20 25 30 35 40
VDS(V)
Coss (pF)
Ta=+25℃
f=1MHz
VDS VS. Crss Characteristics
0
5
10
15
20
25
30
0 5 10 15 20 25 30 35 40
VDS(V)
Crss (pF)
Ta=+25℃
f=1MHz
VDS-IDS Characteristics
0
5
10
15
0 2 4 6 8 10 12 14
VDS(V)
IDS(A)
3.0V
3.5V
4.0V
4.5V
5.0V
Ta=+25℃
V
GS=2.7V
VGS-IDS Characteristics
0
1
2
3
4
5
6
7
8
9
10
0 0.5 1 1.5 2 2.5 3 3.5 4
VGS(V)
IDS(A) ｇｍ（S)
gm
IDS
Ta=+25℃
V
DS=10V
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
Publication Date : Oct．2011
4
VHF-band TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
Frequency Characteristics @f=135 to 175MHz
20
30
40
50
60
70
80
130 135 140 145 150 155 160 165 170 175 180
f (MHz)
Pout(W) , Drain Effi(%)
4
6
8
10
12
14
16
Gp(dB), Idd(A)
Pout
ηD
Gp
Ta=+25deg.C
Vds=12.5V, Idq=0.5A, Pin=3W
Idd
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
Publication Date : Oct．2011
5
VHF-band TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
Output Power versus Input Power Input Return Loss versus Output Power
Gain versus Output Power Drain Efficiency versus Output Power
0
10
20
30
40
50
60
0 1 2 3 4 5 6
Pin, INPUT POWER(W)
Pout , OUTPUT POWER(W)
Ta=+25deg.C,Vds=12.5V, Idq=0.5A
175MHz
135MHz155MHz
-30
-25
-20
-15
-10
-5
0
0 10 20 30 40 50 60
Pout, OUTPUT POWER(W)
IRL, INPUT RETURN LOSS (dB)
Ta=+25deg.C,Vds=12.5V, Idq=0.5A
135MHz
175MHz155MHz
0
10
20
30
40
50
60
70
80
0 10 20 30 40 50 60
Pout, OUTPUT POWER(W)
η, DRAIN EFFICIENCY(%)
Ta=+25deg.C,Vds=12.5V, Idq=0.5A
135MHz
175MHz
155MHz
11
12
13
14
15
16
17
18
19
20
21
0 10 20 30 40 50 60
Pout, OUTPUT POWER(W)
Gp, POWER GAIN(dB)
Ta=+25deg.C,Vds=12.5V, Idq=0.5A
155MHz
135MHz
175MHz
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
Publication Date : Oct．2011
6
VHF-band TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
Output Power versus Biasing Current Drain Efficiency versus Biasing Current
Output Power versus Supply Voltage Drain Efficiency versus Supply Voltage
30
35
40
45
50
200 400 600 800 1000 1200 1400
IDQ, BIASING CURRENT(mA)
Pout , OUTPUT POWER(W)
Pin=3W
Ta=+25deg.C,Vds=12.5V
175MHz
135MHz 155MHz
40
50
60
70
80
200 400 600 800 1000 1200 1400
IDQ, BIASING CURRENT(mA)
η, DRAIN EFFICIENCY (%)
Pin=3W
Ta=+25deg.C,Vds=12.5V
135MHz
175MHz
155MHz
Pin=3W
Ta=+25deg.C, Idq=0.5A
20
30
40
50
60
70
10 11 12 13 14 15
VDD, SUPPLY VOLTAGE(V)
Pout , OUTPUT POWER(W)
175MHz
155MHz
135MHz
Pin=3W
Ta=+25deg.C, Idq=0.5A
40
50
60
70
80
10 11 12 13 14 15
VDD, SUPPLY VOLTAGE(V)
η , D RA IN E F F IC IE NC Y (% )
175MHz
155MHz 135MHz
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
Publication Date : Oct．2011
7
UHF-band, 380 - 430MHz, TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
Output Power versus Input Power Input Return Loss versus Output Power
Gain versus Output Power Drain Efficiency versus Output Power
0
10
20
30
40
50
60
70
0 10 20 30 40 50 60
Pout, OUTPUT POWER(W)
η, DRAIN EFFICIENCY(%)
Ta=+25deg.C,Vds=12.5V, Idq=0.7A
380MHz
430MHz
405MHz
9
10
11
12
13
14
15
16
0 10 20 30 40 50 60
Pout, OUTPUT POWER(W)
Gp, POWER GAIN(dB)
Ta=+25deg.C,Vds=12.5V, Idq=0.7A
380MHz
430MHz
405MHz
0
10
20
30
40
50
60
0 1 2 3 4 5 6
Pin, INPUT POWER(W)
Pout , OUTPUT POWER(W)
Ta=+25deg.C,Vds=12.5V, Idq=0.7A
380MHz 405MHz
430MHz
-40
-35
-30
-25
-20
-15
-10
-5
0
0 10 20 30 40 50 60
Pout, OUTPUT POWER(W)
IRL, INPUT RETURN LOSS (dB)
Ta=+25deg.C,Vds=12.5V, Idq=0.7A
380MHz
430MHz
405MHz
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
Publication Date : Oct．2011
8
UHF-band, 380 - 430MHz, TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
Output Power versus Input Power, Digital Modulation
Gain and Adjacent Channel Power Ratio versus Output Power, Digital Modulation
10
11
12
13
14
15
16
30 40 50
Pout, OUTPUT POWER(dBm)
Gp, POWER GAIN(dB)
-60
-50
-40
-30
-20
-10
0
ACP-Lower(dBc)
Ta=+25deg.C,Vds=12.5V, Idq=0.7A
(MOD: π/4 DQPSK, 18kbps, α=0.35, Ch-BW/Sp=18kHz/25kHz)
405MHz
430MHz
380MHz
380MHz
430MHz
Gp
10
11
12
13
14
15
16
30 40 50
Pout, OUTPUT POWER(dBm)
Gp, POWERGAIN(dB)
-60
-50
-40
-30
-20
-10
0
ACP-Upper(dBc)
Ta=+25deg.C,Vds=12.5V, Idq=0.7A
(MOD: π/4 DQPSK, 18kbps, α=0.35, Ch-BW/Sp=18kHz/25kHz)
405MHz
430MHz
380MHz
380MHz
430MHz
Gp
ACP
20
25
30
35
40
45
50
10 20 30
Pin, INPUT POWER(dBm)
Pout , OUTPUT POWER(dBm)
Ta=+25deg.C,Vds=12.5V, Idq=0.7A
(MOD: π/4 DQPSK, 18kbps, α=0.35, Ch-BW/Sp=18kHz/25kHz)
405MHz
430MHz
380MHz
0
10
20
30
40
10 20 30
Pin, INPUT POWER(dBm)
Pout , OUTPUT POWER(W)
Ta=+25deg.C,Vds=12.5V, Idq=0.7A
(MOD: π/4 DQPSK, 18kbps, α=0.35, Ch-BW/Sp=18kHz/25kHz)
380MHz
430MHz
405MHz
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
Publication Date : Oct．2011
9
UHF-band, 450 - 530MHz, TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
Frequency Characteristics @f=450 to 530MHz
10
20
30
40
50
60
70
440 450 460 470 480 490 500 510 520 530 540
f (MHz)
Pout(W) , Drain Effi(%)
4
6
8
10
12
14
16
Gp(dB), Idd(A)
Pout
ηD
Gp
Idd
Ta=+25deg.C,
Vds=12.5V,Idq=0.5A, Pin=3W
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
Publication Date : Oct．2011
10
UHF-band, 450 - 530MHz, TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
Output Power versus Input Power Input Return Loss versus Output Power
Gain versus Output Power Drain Efficiency versus Output Power
9
10
11
12
13
14
15
0 10 20 30 40 50 60
Pout, OUTPUT POWER(W)
Gp, POWER GAIN(dB)
Ta=+25deg.C,Vds=12.5V, Idq=0.5A
450MHz
530MHz
490MHz
-30
-25
-20
-15
-10
-5
0
0 10 20 30 40 50 60
Pout, OUTPUT POWER(W)
IRL, INPUT RETURN LOSS (dB)
Ta=+25deg.C,Vds=12.5V, Idq=0.5A
450MHz
530MHz
490MHz
0
10
20
30
40
50
60
70
0 10 20 30 40 50 60
Pout, OUTPUT POWER(W)
η, DRAIN EFFICIENCY(%)
Ta=+25deg.C,Vds=12.5V, Idq=0.5A
450MHz
530MHz
490MHz
0
10
20
30
40
50
60
0123456
Pin, INPUT POWER(W)
Pout , OUTPUT POWER(W)
Ta=+25deg.C,Vds=12.5V, Idq=0.5A
450MHz 530MHz
490MHz
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
Publication Date : Oct．2011
11
UHF-band, 450 - 530MHz, TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
Output Power versus Biasing Current Drain Efficiency versus Biasing Current
Output Power versus Supply Voltage Drain Efficiency versus Supply Voltage
Pin=3W
Ta=+25deg.C, Idq=0.5A
40
50
60
70
80
10 11 12 13 14 15
VDD, SUPPLY VOLTAGE(V)
η, DRAIN EFFICIENCY(%)
530MHz
490MHz
450MHz
Pin=3W
Ta=+25deg.C, Idq=0.5A
10
20
30
40
50
60
70
10 11 12 13 14 15
VDD, SUPPLY VOLTAGE(V)
Pout , OUTPUT POWER(W)
490MHz
450MHz
530MHz
40
50
60
70
80
200 400 600 800 1000 1200 1400
IDQ, BIASING CURRENT(mA)
η, DRAIN EFFICIENCY (%)
Pin=3W
Ta=+25deg.C,Vds=12.5V
450MHz
530MHz
490MHz
30
35
40
45
50
200 400 600 800 1000 1200 1400
IDQ, BIASING CURRENT(mA)
Pout , OUTPUT POWER(W)
Pin=3W
Ta=+25deg.C,Vds=12.5V
490MHz
450MHz 530MHz
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
Publication Date : Oct．2011
12
EQUIVALENT CIRCUITRY for VHF EVALUATION BOARD (f=135 - 175MHz)
For more information regarding this evaluation board, refer to APPLICATION NOTE “AN-VHF-048”
VIA
VIA
VIA
VIA
VIA
Drain Bias
ML2 ML2 ML2 ML2 ML1 ML1 ML1 ML1 ML1 ML1 ML2 ML2 ML2 ML2ML1
W=2.0
L=4.0
W=2.0
L=11.0
W=2.0
L=10.0 W=2.0
L=18.0 W=2.2
L=3.0 W=4.0
L=3.0 W=4.0
L=5.0
W=4.6
L=5.3 W=3.6
L=2.9 W=1.8
L=15.0
W=1.2
L=20.0 W=2.0
L=5.0 W=2.0
L=9.0 W=2.0
L=16.0
W=1.2
L=15.0
L1 L2
L3
L4 L5
L6
C2 C3 C4 C5 C6 C7
C1
C9 C8
C11
C10
C12 C13C14C15
C16C17
C18 C19 C20
C21
C22
C23
C24
C25 C26 C27 C28
C29
C30 C31 C32
R2
R1
RF IN
RFOUT
RD35HUF2
Gate Bias Source
Electrode3 Source
Electrode1
Source
Electrode2
Source
Electrode4
Board material: Glass Epoxy Substrate--
er=4.8, TanD=0.018 @1GHz
Micro Strip Line Substrate Thickness: ML1, T=0.2
ML2, T=1.1
VIA Hole Dimensions, Diameter=0.8 Length=1.6
UNIT: W/L/T, mm
R3
C1
470
pF
3.2*1.6
Chip Ceramic Capacitors
C2, C3
22
pF
1.6*0.8
High Q Chip Ceramic Capacitors
C4
12
pF
1.6*0.8
High Q Chip Ceramic Capacitors
C5, C6, C7
68
pF
1.6*0.8
High Q Chip Ceramic Capacitors
C8, C9
1000
pF
2.0*1.2
Chip Ceramic Capacitors
C10, C11
100
pF
1.6*0.8
High Q Chip Ceramic Capacitors
L1
17
nH
-
4Turn Rolling Coil
L2, L3
10
nH
1.6*0.8
chip Inductors
R1
2200
ohm
1.6*0.8
chip Resistors
R2, R3
16
ohm
2.0*1.2
chip Resistors
C12, C13, C14, C15,C16
15
pF
2.0*1.2
High Q Chip Ceramic Capacitors
C17, C18, C19, C20
47
pF
2.0*1.2
High Q Chip Ceramic Capacitors
C21, C22, C23, C24, C25
22
pF
2.0*1.2
High Q Chip Ceramic Capacitors
C26
18
pF
2.0*1.2
High Q Chip Ceramic Capacitors
C27
15
pF
2.0*1.2
High Q Chip Ceramic Capacitors
C28
24
pF
2.0*1.2
High Q Chip Ceramic Capacitors
C29
470
pF
3.2*1.6
Chip Ceramic Capacitors
C30, C31
1000
pF
2.0*1.2
Chip Ceramic Capacitors
C32
220
uF
-
35V, Electrolytic Capacitor
L4
8
nH
-
2Turn Rolling Coil
L5
12
nH
-
3Turn Rolling Coil
L6
25
nH
-
5Turn Rolling Coil
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
Publication Date : Oct．2011
13
EQUIVALENT CIRCUITRY for UHF EVALUATION BOARD (f=380 - 430MHz)
For more information regarding this evaluation board, refer to APPLICATION NOTE “AN-UHF-127”
Board material: Glass Epoxy Substrate--
er=4.8, TanD=0.018 @1GHz
Micro Strip Line Substrate Thickness: ML1, T=0.2
ML2, T=1.1
VIA Hole Dimensions, Diameter=0.8 Length=1.6
UNIT: W/L/T, mm
RD35HUF2
C1
C2
ML2
RF IN
ML1 ML1 ML1 ML1 ML1 ML1 VIAVIA ML2 ML2 ML2 ML2
VIA VIA
VIA
C3 L2
C5
C7C8 R1
L10
C10
C11 C12 C13 C14
C15 C18 C19
W=4.0
L=11.5
W=2.2
L=3.0
W=0.8
L=18.0
W=2.0
L=14.0
W=2.0
L=11.0
W=4.6
L=5.3
W=3.6
L=2.9 W=1.8
L=4.5 W=1.2
L=15.0
W=1.2
L=20.0
W=6.6
L=4.8
W=2.0
L=14.0 W=2.0
L=16.0
Characteristic impidance 50ohm Characteristic impidance 50ohm
C20
RFOUT
Drain Bias
Gate Bias
Source
Electrode1
Source
Electrode2
Source
Electrode4
Source
Electrode3
C4
L1
L11
C16
C17
C6
ML2
ML2
C1
330
pF
3.2*1.6
Chip Ceramic Capacitors
C2
6
pF
1.6*0.8
High Q Chip Ceramic
C3
27
pF
1.6*0.8
High Q Chip Ceramic
C4
9
pF
1.6*0.8
High Q Chip Ceramic
C5, C6
18
pF
1.6*0.8
High Q Chip Ceramic
C7, C8
1000
pF
2.0*1.2
Chip Ceramic Capacitors
R1
2.2
kohm
1.6*0.8
L1, L2
2.2
nH
1.6*0.8
Chip Inductors
C10
33
pF
2.0*1.2
High Q Chip Ceramic
C11
33
pF
2.0*1.2
High Q Chip Ceramic
C12
18
pF
2.0*1.2
High Q Chip Ceramic
C13
18
pF
2.0*1.2
High Q Chip Ceramic
C14
5
pF
2.0*1.2
High Q Chip Ceramic
C15
1.2
pF
2.0*1.2
High Q Chip Ceramic
C16
9
pF
2.0*1.2
High Q Chip Ceramic
C17
100
pF
3.2*2.5
High Q Chip Ceramic
C18, C19
1000
pF
2.0*1.2
Chip Ceramic Capacitors
C20
220
uF
-
35V, Electrolytic Capacitor
L10
8
nH
-
2Turn Rolling Coil
L11
17
nH
-
4Turn Rolling Coil
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
Publication Date : Oct．2011
14
EQUIVALENT CIRCUITRY for UHF EVALUATION BOARD (f=450 - 530MHz)
For more information regarding this evaluation board, refer to APPLICATION NOTE “AN-UHF-112”
ML2
Board material: Glass Epoxy Substrate--
er=4.8, TanD=0.018 @1GHz
Micro Strip Line Substrate Thickness: ML1, T=0.2
ML2, T=1.1
VIA Hole Dimensions, Diameter=0.8 Length=1.6
UNIT: W/L/T, mm
RD35HUF2
C1
C2
ML2
RF IN
ML2 ML1 ML1 ML1 ML1 ML1 ML1 VIAVIA ML2 ML2 ML2 ML2
VIA VIA
VIA
C3 C4 C6
C5
C7C8 R1 L1
C10
C11 C12 C13 C14 C15
C18 C19
W=4.0
L=11.5
W=2.2
L=3.0
W=0.8
L=18.0
W=2.0
L=14.0
W=2.0
L=11.0
W=4.6
L=5.3
W=3.6
L=2.9 W=1.8
L=4.5 W=1.2
L=15.0 W=1.2
L=20.0
W=6.6
L=4.8 W=2.0
L=14.0 W=2.0
L=16.0
Characteristic impidance 50ohm Characteristic impidance 50ohm
C20 RFOUT
Drain Bias
Gate Bias
Source
Electrode1
Source
Electrode2
Source
Electrode4
Source
Electrode3
C16
C17
C1
330
pF
3.2*1.6
Chip Ceramic Capacitors
C2
6.2
pF
1.6*0.8
High Q Chip Ceramic
C3
18
pF
1.6*0.8
High Q Chip Ceramic
C4
9
pF
1.6*0.8
High Q Chip Ceramic
C5, C6
18
pF
1.6*0.8
High Q Chip Ceramic
C7, C8
1000
pF
2.0*1.2
Chip Ceramic Capacitors
R1
2.2
kohm
1.6*0.8
C10
33
pF
2.0*1.2
High Q Chip Ceramic
C11
33
pF
2.0*1.2
High Q Chip Ceramic
C12
2.4
pF
2.0*1.2
High Q Chip Ceramic
C13
12
pF
2.0*1.2
High Q Chip Ceramic
C14
3.3
pF
2.0*1.2
High Q Chip Ceramic
C15
5.1
pF
2.0*1.2
High Q Chip Ceramic
C16
9.1
pF
2.0*1.2
High Q Chip Ceramic
C17
100
pF
3.2*2.5
High Q Chip Ceramic
C18, C19
1000
pF
2.0*1.2
Chip Ceramic Capacitors
C20
220
uF
-
35V, Electrolytic Capacitor
L1
29
nH
-
6Turn Rolling Coil
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
Publication Date : Oct．2011
15
Input / Output Impedance VS. Frequency Characteristics
Zout*: Complex conjugate of output impedance
Zin*: Complex conjugate of input impedance
f
Zout*
(MHz)
(ohm)
135
1.77-j0.80
155
1.83-j0.59
175
1.38-j0.07
f=175MHz
f=155MHz
f=135MHz
Zout* ( f=135, 155, 175MHz)
Zo=10ohm
@Pin=3W, Vds=12.5V,
Idq=0.5A
f
Zin*
(MHz)
(ohm)
135
6.64+j0.83
155
6.43+j0.57
175
3.84+j2.13
f=135MHz
f=155MHz
f=175MHz
Zin* ( f=135, 155, 175MHz)
Zo=10ohm @Pin=3W, Vds=12.5V,
Idq= 0.5A
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
Publication Date : Oct．2011
16
Input / Output Impedance VS. Frequency Characteristics
Zout*: Complex conjugate of output impedance
Zin*: Complex conjugate of input impedance
f
Zout*
(MHz)
(ohm)
380
1.44-j0.41
405
1.43-j0.30
430
1.30-j0.19
f=380MHz
f=405MHz
f=430MHz
Zout* ( f=380, 405, 430MHz)
Zo=10ohm
@Pin=3W, Vds=12.5V,
Idq=0.5A
f
Zin*
(MHz)
(ohm)
380
1.34+j0.00
405
1.43+j0.58
430
1.52+j1.11
f=380MHz
f=405MHz
f=430MHz
Zin* ( f=380, 405, 430MHz)
Zo=10ohm
@Pin=3W, Vds=12.5V,
Idq= 0.5A
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
Publication Date : Oct．2011
17
Input / Output Impedance VS. Frequency Characteristics
Zout*: Complex conjugate of output impedance
Zin*: Complex conjugate of input impedance
f
Zout*
(MHz)
(ohm)
450
1.59+j0.69
490
1.57+j0.91
530
1.14+j1.24
f=450MHz
f=490MHz
f=530MHz
Zout* ( f=450, 490, 530MHz)
Zo=10ohm @Pin=3W, Vds=12.5V,
Idq=0.5A
f
Zin*
(MHz)
(ohm)
450
1.79+j0.77
490
1.99+j1.38
530
2.06-j1.69
f=450MHz
f=490MHz
f=530MHz
Zin* ( f=450, 490, 530MHz)
Zo=10ohm
@Pin=3W, Vds=12.5V,
Idq= 0.5A
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
Publication Date : Oct．2011
18
Small Signal Parameter of RD35HUF2
Bias Condition: Vds=12.5V, Idq=0.5A
Freq S11 S21 S12 S22
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
100 0.884 -173.6 4.946 71.4 0.010 -15.3 0.829 -173.1
135 0.896 -174.0 3.449 64.9 0.009 -20.1 0.848 -173.1
150 0.903 -174.2 3.020 62.5 0.009 -20.8 0.858 -173.0
175 0.911 -174.5 2.471 58.7 0.008 -23.1 0.872 -173.2
200 0.920 -174.7 2.059 55.1 0.008 -25.0 0.885 -173.4
250 0.933 -175.3 1.473 49.7 0.006 -27.6 0.906 -173.9
300 0.946 -175.8 1.109 45.1 0.005 -27.3 0.922 -174.5
350 0.954 -176.4 0.857 41.9 0.004 -24.3 0.935 -175.0
400 0.958 -177.0 0.687 39.9 0.003 -19.0 0.947 -175.7
450 0.964 -177.5 0.552 37.6 0.003 -8.6 0.954 -176.3
500 0.968 -178.0 0.458 35.5 0.002 8.3 0.960 -177.0
530 0.970 -178.3 0.409 36.4 0.002 20.0 0.965 -177.2
550 0.971 -178.5 0.393 35.9 0.002 32.5 0.966 -177.4
600 0.970 -179.4 0.350 35.5 0.002 54.8 0.966 -178.2
650 0.971 -179.9 0.299 33.7 0.002 72.1 0.968 -178.8
700 0.974 179.4 0.268 34.1 0.003 84.6 0.971 -179.4
750 0.976 178.8 0.240 34.6 0.004 92.8 0.974 179.9
800 0.977 178.1 0.209 34.8 0.004 97.7 0.979 179.2
850 0.975 177.3 0.191 34.0 0.005 102.0 0.978 177.9
900 0.976 176.6 0.179 36.2 0.006 104.0 0.980 177.1
950 0.977 175.7 0.162 35.9 0.006 106.7 0.981 176.4
1000 0.978 174.7 0.152 36.8 0.007 107.9 0.984 175.6
1050 0.979 173.7 0.141 37.1 0.008 110.6 0.986 174.7
1100 0.979 172.7 0.132 39.1 0.009 110.5 0.985 173.7
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
Publication Date : Oct．2011
19
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that
have
a possibility to receive a burn to touch the operating product directly or touch the product
until cold after switch
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use t
his products without cause damage for human and
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional
details
regarding operation of these products from the formal specification sheet. For
copies of the formal
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products
(RF power transistors) are designed
for consumer mobile communication terminals and were not specifically designed for use in
other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
under a
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
necessary for critical communications elements and
In the application, which is base station applications and
fixed station applications that operate with long term continuous transmission and a higher on-
off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
period and others as needed. For the reliability report which is described about
predicted operating life time of
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or
an authorized Mitsubishi
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
therefore
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the
device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
It is
recommended to utilize a sufficient sized heat-
sink in conjunction with other cooling methods as needed (fan,
etc.) to keep the channel temperature for RD series products
lower than 120deg/C(in case of
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to
the
supplementary items in the specification sheet.
8.
Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials
, please refer the last page
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
< Silicon RF Power MOS FET (Discrete) >
RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
Publication Date : Oct．2011
20
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
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•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
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The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
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