/TechnicalInformation IGBT- IGBT-modules FF1200R17KE3 PreliminaryData IGBT,/IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES 1700 V ContinuousDCcollectorcurrent TC = 80C, Tvj max = 150C TC = 25C, Tvj max = 150C IC nom IC 1200 1600 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 2400 A Totalpowerdissipation TC = 25C, Tvj max = 150 Ptot 5,95 kW Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues min. Collector-emittersaturationvoltage IC = 1200 A, VGE = 15 V IC = 1200 A, VGE = 15 V Gatethresholdvoltage IC = 48,0 mA, VCE = VGE, Tvj = 25C Gatecharge Tvj = 25C Tvj = 125C VCE sat A A typ. max. 2,00 2,40 2,45 V V VGEth 5,2 5,8 6,4 V VGE = -15 V ... +15 V QG 14,0 C Internalgateresistor Tvj = 25C RGint 1,6 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 110 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 3,50 nF - Collector-emittercut-offcurrent VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA - Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA () Turn-ondelaytime,inductiveload IC = 1200 A, VCE = 900 V VGE = 15 V RGon = 1,2 Tvj = 25C Tvj = 125C td on 0,74 0,80 s s () Risetime,inductiveload IC = 1200 A, VCE = 900 V VGE = 15 V RGon = 1,2 Tvj = 25C Tvj = 125C tr 0,20 0,25 s s () Turn-offdelaytime,inductiveload IC = 1200 A, VCE = 900 V VGE = 15 V RGoff = 1,5 Tvj = 25C Tvj = 125C td off 1,45 1,80 s s () Falltime,inductiveload IC = 1200 A, VCE = 900 V VGE = 15 V RGoff = 1,5 Tvj = 25C Tvj = 125C tf 0,18 0,30 s s () Turn-onenergylossperpulse IC = 1200 A, VCE = 900 V, LS = 50 nH VGE = 15 V RGon = 1,2 Tvj = 25C Tvj = 125C Eon 240 350 mJ mJ ( Turn-offenergylossperpulse IC = 1200 A, VCE = 900 V, LS = 50 nH VGE = 15 V RGoff = 1,5 Tvj = 25C Tvj = 125C Eoff 305 445 mJ mJ SCdata VGE 15 V, VCC = 1000 V VCEmax = VCES -LsCE *di/dt ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH 17,0 Temperatureunderswitchingconditions Tvj op -40 preparedby:MW dateofpublication:2013-10-02 approvedby:CL revision:2.1 1 tP 10 s, Tvj = 125C 4800 A 21,0 K/kW K/kW 125 C /TechnicalInformation IGBT- IGBT-modules FF1200R17KE3 PreliminaryData ,/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms I2t- It-value VR = 0 V, tP = 10 ms, Tvj = 125C VRRM 1700 V IF 1200 A IFRM 2400 A It 240 kAs /CharacteristicValues min. typ. max. 1,80 1,90 2,20 Forwardvoltage IF = 1200 A, VGE = 0 V IF = 1200 A, VGE = 0 V Tvj = 25C Tvj = 125C VF Peakreverserecoverycurrent IF = 1200 A, - diF/dt = 7000 A/s (Tvj=125C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V IRM 1150 1250 A A Recoveredcharge IF = 1200 A, - diF/dt = 7000 A/s (Tvj=125C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Qr 305 510 C C Reverserecoveryenergy IF = 1200 A, - diF/dt = 7000 A/s (Tvj=125C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Erec 190 340 mJ mJ Thermalresistance,junctiontocase /perdiode RthJC Thermalresistance,casetoheatsink /perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 39,0 Temperatureunderswitchingconditions Tvj op -40 preparedby:MW dateofpublication:2013-10-02 approvedby:CL revision:2.1 2 V V 48,0 K/kW K/kW 125 C /TechnicalInformation IGBT- IGBT-modules FF1200R17KE3 PreliminaryData /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. Materialofmodulebaseplate Internalisolation (class1,IEC61140) basicinsulation(class1,IEC61140) Creepagedistance VISOL 3,4 kV Cu Al2O3 -/terminaltoheatsink -/terminaltoterminal 15,0 15,0 mm Clearance -/terminaltoheatsink -/terminaltoterminal 10,0 10,0 mm Comperativetrackingindex CTI > 250 Thermalresistance,casetoheatsink /permodule Paste=1W/(m*K)/grease=1W/(m*K) , Strayinductancemodule ,- Moduleleadresistance,terminals-chip TC=25C,/perswitch Storagetemperature Mountingtorqueformodulmounting Terminalconnectiontorque min. typ. RthCH 6,00 LsCE 20 nH RCC'+EE' 0,37 m Tstg -40 125 C M6 ScrewM6-Mountingaccordingtovalidapplicationnote M 4,25 - 5,75 Nm M4 ScrewM4-Mountingaccordingtovalidapplicationnote M8 ScrewM8-Mountingaccordingtovalidapplicationnote 1,8 - 2,1 Nm M 8,0 - 10 Nm Weight G 1500 g preparedby:MW dateofpublication:2013-10-02 approvedby:CL revision:2.1 3 max. K/kW /TechnicalInformation IGBT- IGBT-modules FF1200R17KE3 PreliminaryData IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=125C 2400 2400 Tvj = 25C Tvj = 125C 2200 1800 1800 1600 1600 1400 1400 IC [A] 2000 IC [A] 2000 1200 1200 1000 1000 800 800 600 600 400 400 200 200 0 VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V VGE = 8V 2200 0,0 0,5 1,0 1,5 2,0 VCE [V] 2,5 3,0 3,5 0 4,0 IGBT,() transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=1.2,RGoff=1.5,VCE=900V 2400 1000 Tvj = 25C Tvj = 125C 2200 Eon, Tvj = 125C Eoff, Tvj = 125C 900 2000 800 1800 700 1600 600 IC [A] E [mJ] 1400 1200 1000 500 400 800 300 600 200 400 100 200 0 5 6 7 8 9 VGE [V] 10 11 12 0 13 preparedby:MW dateofpublication:2013-10-02 approvedby:CL revision:2.1 4 0 400 800 1200 IC [A] 1600 2000 2400 /TechnicalInformation IGBT- IGBT-modules FF1200R17KE3 PreliminaryData IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=1200A,VCE=900V IGBT, transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 2000 100 Eon, Tvj = 125C Eoff, Tvj = 125C 1800 ZthJC : IGBT 1600 1400 10 E [mJ] ZthJC [K/kW] 1200 1000 800 1 600 400 i: 1 2 3 4 ri[K/kW]: 7,35 7,35 4,2 2,1 i[s]: 0,02 0,06 0,1 0,3 200 0 0 1 2 3 4 5 6 7 RG [] 8 9 0,1 0,001 10 11 12 IGBT,RBSOA reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=1.5,Tvj=125C 0,1 t [s] 1 10 ,) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 2600 2400 IC, Modul IC, Chip 2400 Tvj = 25C Tvj = 125C 2200 2200 2000 2000 1800 1800 1600 1600 1400 IF [A] IC [A] 1400 1200 1200 1000 1000 800 800 600 600 400 400 200 200 0 0,01 0 200 400 600 0 800 1000 1200 1400 1600 1800 VCE [V] preparedby:MW dateofpublication:2013-10-02 approvedby:CL revision:2.1 5 0,0 0,5 1,0 1,5 VF [V] 2,0 2,5 3,0 /TechnicalInformation IGBT- IGBT-modules FF1200R17KE3 PreliminaryData ,) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=1.2,VCE=900V ,) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=1200A,VCE=900V 500 400 Erec, Tvj = 125C Erec, Tvj = 125C 375 450 350 400 325 350 300 275 E [mJ] E [mJ] 300 250 250 225 200 200 150 175 100 150 50 0 125 0 400 800 1200 IF [A] 1600 2000 100 2400 , transientthermalimpedanceDiode,Inverter ZthJC=f(t) 100 ZthJC [K/kW] ZthJC : Diode 10 i: 1 2 3 4 ri[K/kW]: 16,8 16,8 9,6 4,8 i[s]: 0,02 0,06 0,1 0,3 1 0,001 0,01 0,1 t [s] 1 10 preparedby:MW dateofpublication:2013-10-02 approvedby:CL revision:2.1 6 0 1 2 3 4 5 6 7 RG [] 8 9 10 11 12 /TechnicalInformation IGBT- IGBT-modules FF1200R17KE3 PreliminaryData /circuit_diagram_headline /packageoutlines preparedby:MW dateofpublication:2013-10-02 approvedby:CL revision:2.1 7 /TechnicalInformation IGBT- IGBT-modules FF1200R17KE3 PreliminaryData www.infineon.com - - - Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. 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