ATF-531P8 High Linearity Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Data Sheet Description Features Avago Technologies' ATF531P8 is a single-voltage high linearity, low noise EpHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier (LPCC [3]) package. The device is ideal as a high linearity, low-noise, mediumpower amplifier. Its operating frequency range is from 50 MHz to 6 GHz. * Single voltage operation The thermally efficient package measures only 2 mm x 2 mm x 0.75 mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device has a Point MTTF of over 300 years at a mounting temperature of +85C. All devices are 100% RF & DC tested. Pin Connections and Package Marking * High linearity and gain * Low noise figure * Excellent uniformity in product specifications * Small package size: 2.0 x 2.0 x 0.75 mm * Point MTTF > 300 years [2] * MSL-1 and lead-free * Tape-and-reel packaging option available Specifications 2 GHz; 4V, 135 mA (Typ.) Pin 7 (Drain) Pin 6 Pin 5 Source (Thermal/RF Gnd) * 38 dBm output IP3 Pin 8 Pin 1 (Source) * 0.6 dB noise figure Pin 2 (Gate) * 20 dB gain Pin 3 Pin 4 (Source) Bottom View Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 4 (Source) * 24.5 dBm output power at 1 dB gain compression Applications Pin 8 3Px * 10.7 dB LFOM [4] Pin 7 (Drain) Pin 6 Pin 5 Top View Note: Package marking provides orientation and identification: * Front-end LNA Q1 and Q2 driver or pre-driver ampli fier for Cellular/PCS and WCDMA wireless infrastruc ture * Driver amplifier for WLAN, WLL/RLL and MMDS ap plications * General purpose discrete E-pHEMT for other high linearity applications "3P" = Device Code "x" = Date code indicates the month of manufacture. Notes: 1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Conforms to JEDEC reference outline MO229 for DRP-N 4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power. ATF-531P8 Absolute Maximum Ratings[1] Symbol Parameter Units Absolute Maximum VDS Drain-Source Voltage[2] V 7 VGS Gate-Source Voltage V-7 to 1 VGD Gate Drain Voltage V-7 to 1 IDS Drain Current mA 300 IGS Gate Current mA 20 Pdiss Total Power Dissipation W 1 Pin max. RF Input Power dBm +24 TCH Channel Temperature C 150 TSTG Storage Temperature C-65 to 150 ch_b Thermal Resistance[4] C/W [2] [2] [2] [3] Notes: 1. Operation of this device in excess of any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Board (package belly) temperatureTB is 25C. Derate 16 mW/C for TB > 87C. 4. Thermal resistance measured using 150C Liquid Crystal Measurement meth od. 5. Device can safely handle +24 dBm RF Input Power provided IGS is limited to 20mA. IGS at P1dB drive level is bias circuit depen dent. 63 Product Consistency Distribution Charts at 2 GHz, 4V, 135 mA [5,6] 160 180 400 0.9 V Cpk = 1.2 Stdev = 0.71 Cpk = 1.0 Stdev = 0.14 150 120 300 IDS (mA) 0.8 V 200 0.7 V 100 0.6 V 120 +3 Std -3 Std 90 +3 Std -3 Std 80 60 40 30 0.5 V 0 0 0 1 2 3 4 5 6 7 0 1.2 300 0 35 36 37 38 39 40 41 OIP3 (dBm) Figure 3. OIP3 LSL = 35.5, Nominal = 38.1. Figure 2. NF Nominal = 0.6, USL = 1.0. Figure 1. Typical I-V Curves (Vgs = 0.1 per step). 240 Cpk = 2.0 Stdev = 0.21 250 Stdev = 0.12 200 200 160 +3 Std -3 Std 120 100 80 50 40 0 18.5 0.9 NF (dB) VDS (V) 150 0.6 0.3 19.5 20.5 21.5 0 24.2 24.4 GAIN (dB) Figure 4. Small Signal Gain LSL = 18.5, Nominal = 20.2 dB, USL = 21.5. +3 Std -3 Std 24.6 24.8 25 25.2 P1dB (dBm) Figure 5. P1dB Nominal = 24.6. Notes: 5. Distribution data sample size is 500 samples taken from 5 different wafers and 3 different lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 6. Measurements are made on production test board, which represents a trade-off between optimal OIP3, NF and VSWR. Circuit losses have been deembedded from actual measurements. ATF-531P8 Electrical Specifications TA = 25C, DC bias for RF parameters is Vds = 4V and Ids = 135 mA unless otherwise specified. Symbol Parameter and Test Condition Units Min. Typ. Max. Vgs Operational Gate Voltage Vds = 4V, Ids = 135 mA V -- 0.68 -- Vth Threshold Voltage Vds = 4V, Ids = 8 mA V -- 0.3 -- Idss Saturated Drain Current Vds = 4V, Vgs = 0V A -- 3.7 -- Gm Transconductance Vds = 4.5V, Gm = Idss/Vgs; Vgs = Vgs1 - Vgs2 Vgs1 = 0.6V, Vgs2 = 0.55V mmho -- 650 -- Igss A-10-0.34 -- NF Noise Figure f = 2 GHz f = 900 MHz dB dB -- -- 0.6 0.6 1 -- G Gain[1] f = 2 GHz f = 900 MHz dB dB 18.5 -- 20 25 21.5 -- OIP3 Output 3rd Order f = 2 GHz Intercept Point[1,2] f = 900 MHz dBm dBm 35.5 -- 38 37 -- -- P1dB Output 1dB f = 2 GHz Compressed[1] f = 900 MHz dBm dBm -- -- 24.5 23 -- -- PAE Power Added Efficiency f = 2 GHz f = 900 MHz % % -- -- 57 45 -- -- ACLR dBc dBc ---68 ---64 Gate Leakage Current Vds = 0V, Vgs = -4V [1] Adjacent Channel Leakage Offset BW = 5 MHz Power Ratio[1,3] Offset BW = 10 MHz -- -- Notes: 1. Measurements obtained using production test board described in Figure 6. 2. F1 = 2.00 GHz, F2 = 2.01 GHz and Pin = -10 dBm per tone. 3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06) - Test Model 1 - Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128) - Freq = 2140 MHz - Pin = -5 dBm - Chan Integ Bw = 3.84 MHz Input 50 Ohm Transmission Line Including Gate Bias T (0.3 dB loss) Input Matching Circuit _mag = 0.66 _ang = -165 (1.8 dB loss) DUT Output Matching Circuit _mag = 0.09 _ang = 118 (1.1 dB loss) 50 Ohm Transmission Line and Drain Bias T (0.3 dB loss) Output Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a tradeoff between optimal OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements. 2.2 pF 50 Ohm .02 3.3 pF RF Input 110 Ohm .03 DUT 110 Ohm .03 50 Ohm .02 22 nH 4.7 pF RF Output 12 nH 15 Ohm 2.2 F Drain DC Supply 100 pF Gate DC Supply Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown. Gamma Load and Source at Optimum OIP3 Tuning Conditions The device's optimum OIP3 measurements were determined using a Maury load pull system at 4V, 135 mA quiesent bias. The gamma load and source over frequency are shown in the table below: Freq (GHz) Gamma Source Mag Ang Gamma Load Mag Ang OIP3 (dBm) Gain (dB) P1dB (dBm) PAE (%) 0.9 0.616-37.1 0.249 130.0 40.3 16.5 23.4 43.2 2.0 0.310 34.5 0.285 168.3 41.5 13.4 24.8 51.9 3.9 0.421 167.5 0.437-161.6 41.5 10.5 24.7 42.8 5.8 0.402-162.8 0.418-134.1 41.0 7.9 24.7 36.6 45 45 40 40 40 35 30 3V 4V 5V 25 20 75 90 105 120 135 150 OIP3 (dBm) 45 OIP3 (dBm) OIP3 (dBm) ATF-531P8 Typical Performance Curves (at 25C unless specified otherwise) Tuned for Optimal OIP3 35 30 3V 4V 5V 25 20 165 180 75 90 105 Figure 8. OIP3 vs. Ids and Vds at 900 MHz. 150 3V 4V 5V 25 20 165 180 75 17 12 16 16 10 15 15 13 12 14 13 3V 4V 5V 90 105 120 135 150 3V 4V 5V 11 10 165 180 75 90 105 Ids (mA) 120 135 150 0 165 180 Figure 12. Small Signal Gain vs. Ids and Vds at 2 GHz. 25 20 15 10 75 90 105 120 135 150 P1dB (dBM) 25 P1dB (dBm) 25 10 75 90 105 165 180 Idq (mA) Figure 14. P1dB vs. Idq and Vds at 900 MHz. 90 105 120 135 135 150 165 180 150 20 15 3V 4V 5V 75 120 Figure 13. Small Signal Gain vs. Ids and Vds at 3.9 GHz. 30 3V 4V 5V 180 Ids (mA) 30 15 165 3V 4V 5V 2 30 20 150 6 Ids (mA) Figure 11. Small Signal Gain vs. Ids and Vds at 900 MHz. 135 4 12 11 120 8 GAIN (dB) 14 75 105 Figure 10. OIP3 vs. Ids and Vds at 3.9 GHz. 17 10 90 Ids (mA) Figure 9. OIP3 vs. Ids and Vds at 2 GHz. GAIN (dB) GAIN (dB) 135 30 Ids (mA) Ids (mA) P1dB (dBm) 120 35 165 180 Idq (mA) Figure 15. P1dB vs. Idq and Vds at 2 GHz. 10 3V 4V 5V 75 90 105 120 135 150 165 180 Idq (mA) Figure 16. P1dB vs. Idq and Vds at 3.9 GHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. The objective of load pull is to optimize OIP3 and therefore may trade-off Small Signal Gain, P1dB and VSWR. 60 60 50 50 50 40 40 40 30 20 30 20 3V 4V 5V 10 0 PAE (%) 60 PAE (%) PAE (%) ATF-531P8 Typical Performance Curves, continued (at 25C unless specified otherwise) Tuned for Optimal OIP3 75 90 105 120 135 20 3V 4V 5V 10 150 165 0 180 75 90 105 Idq (mA) 135 150 165 0 180 75 90 105 120 135 150 165 180 Idq (mA) Figure 18. PAE vs. Idq and Vds at 2 GHz. 45 Figure 19. PAE vs. Idq and Vds at 3.9 GHz. 30 12 10 35 30 3V 4V 5V 25 75 90 105 120 135 150 165 25 8 P1dB (dBm) SMALL SIGNAL GAIN (dB) 40 OIP3 (dBm) 120 3V 4V 5V 10 Idq (mA) Figure 17. PAE vs. Idq and Vds at 900 MHz. 20 30 6 4 Ids (mA) 0 15 3V 4V 5V 2 180 75 90 105 120 135 150 165 180 Ids (mA) Figure 20. OIP3 vs. Ids and Vds at 5.8 GHz. 20 Figure 21. Small Signal Gain vs. Ids and Vds at 5.8 GHz. 10 3V 4V 5V 75 90 105 120 135 150 165 180 Idq (mA) Figure 22. P1dB vs. Idq and Vds at 5.8 GHz. 60 50 PAE (%) 40 30 20 3V 4V 5V 10 0 75 90 105 120 135 150 165 180 Idq (mA) Figure 23. PAE vs. Idq and Vds at 5.8 GHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. The objective of load pull is to optimize OIP3 and therefore may trade-off Small Signal Gain, P1dB and VSWR. ATF-531P8 Typical Performance Curves (at 25C unless specified otherwise) Tuned for Optimal OIP3, continued GAIN (dB) OIP3 (dBm) 40 35 30 20 0.5 1.5 2.5 3.5 4.5 30 15 25 10 5 -40C 25C 85C 25 20 P1dB (dBm) 45 5.5 FREQUENCY (GHz) 0 0.5 15 -40C 25C 85C 1.5 2.5 3.5 4.5 5.5 FREQUENCY (GHz) Figure 24. OIP3 vs. Temp and Freq. (Tuned for optimal OIP3 at 4V, 135 mA) 20 Figure 25. Small Signal Gain vs. Temp and Freq. (Tuned for optimal OIP3 at 4V, 135 mA) 10 0.5 -40C 25C 85C 1.5 2.5 3.5 4.5 5.5 FREQUENCY (GHz) Figure 26. P1dB vs. Temp and Freq. (Tuned for optimal OIP3 at 4V, 135 mA) 80 70 60 PAE (%) 50 40 30 20 -40C 25C 85C 10 0 0.5 1.5 2.5 3.5 4.5 5.5 FREQUENCY (GHz) Figure 27. PAE vs. Temp and Freq. (Tuned for optimal OIP3 at 4V, 135 mA) Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. The objective of load pull is to optimize OIP3 and therefore may trade-off Small Signal Gain, P1dB and VSWR. ATF-531P8 Typical Scattering Parameters at 25C, VDS = 4V, IDS = 180 mA Freq. S11 GHz Mag. Ang. dB S21 Mag. Ang. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 45.702 154.5-40.00 37.192 135.8-35.92 29.950 123.5-34.42 24.477 114.8-33.56 20.693 108.9-32.77 17.760 103.9-32.77 15.516 99.9-32.40 13.742 96.6-32.40 12.346 93.6-32.04 11.164 91.0-32.04 7.579 80.6-31.37 6.024 73.9-30.75 5.863 72.6-30.46 4.894 66.5-29.90 3.902 57.9-29.12 2.906 44.6-27.74 2.292 31.6-26.56 1.879 19.4-25.35 1.593 7.5-24.29 1.370-4.3-23.35 1.226-16.1-22.27 1.084-29.0-21.41 0.962-41.6-20.63 0.852-52.8-19.91 0.748-64.5-19.49 0.658-74.6-19.02 0.575-85.4-18.71 0.521-93.6-18.49 0.434-102.6-18.49 0.371-110.5-18.94 0.626-59.4 33.20 0.704-97.4 31.41 0.761-119.4 29.53 0.794-133.8 27.78 0.815-142.5 26.32 0.824-149.6 24.99 0.834-155.1 23.82 0.840-159.7 22.76 0.845-163.3 21.83 0.848-166.4 20.96 0.854-177.7 17.59 0.857 175.9 15.60 0.853 174.4 15.36 0.853 168.9 13.79 0.855 161.6 11.83 0.858 150.8 9.27 0.864 140.7 7.20 0.871 131.7 5.48 0.869 123.5 4.04 0.880 115.2 2.73 0.883 106.8 1.77 0.884 95.7 0.70 0.874 85.1-0.34 0.874 74.1-1.39 0.877 63.3-2.52 0.884 57.9-3.64 0.894 46.8-4.81 0.896 43.3-5.66 0.898 31.9-7.25 0.918 20.8-8.61 dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG dB 0.010 62.6 0.016 48.8 0.019 39.1 0.021 33.7 0.023 30.0 0.023 27.4 0.024 25.8 0.024 24.6 0.025 24.2 0.025 23.8 0.027 23.5 0.029 24.4 0.030 24.9 0.032 25.8 0.035 26.6 0.041 26.5 0.047 24.3 0.054 21.2 0.061 17.4 0.068 12.6 0.077 7.0 0.085-0.8 0.093-8.8 0.101-16.6 0.106-24.6 0.112-31.9 0.116-39.8 0.119-47.8 0.119-55.1 0.113-62.6 0.410-44.4 0.384-79.2 0.370-101.8 0.360-117.6 0.355-127.1 0.351-135.5 0.349-141.9 0.349-146.9 0.349-151.1 0.347-154.3 0.344-165.8 0.344-171.2 0.335-171.8 0.339-176.8 0.337 177.0 0.356 168.5 0.378 160.6 0.402 152.4 0.427 144.6 0.449 136.1 0.465 127.4 0.489 116.6 0.505 106.0 0.544 97.2 0.596 85.9 0.638 74.7 0.662 65.9 0.699 56.1 0.748 47.7 0.718 39.3 36.60 33.66 31.98 30.67 29.54 28.88 28.11 27.58 26.94 26.50 24.48 23.17 22.91 21.85 19.60 16.23 14.19 12.69 11.18 10.39 9.70 8.70 7.20 6.30 5.46 4.95 4.29 4.06 2.82 1.75 Typical Noise Parameters at 25C, VDS = 4V, IDS = 180 mA opt Mag. opt Rn/50 Ang. 0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10 0.50 0.59 0.60 0.72 0.81 0.90 1.01 1.10 1.13 1.34 1.48 1.58 1.68 1.89 2.15 2.34 0.20 166.00 0.25 169.00 0.35 171.00 0.40 173.00 0.57-173.50 0.61-167.70 0.63-163.50 0.67-158.20 0.70-153.90 0.72-142.70 0.75-135.40 0.76-133.30 0.80-125.00 0.84-116.10 0.82-106.90 0.85-95.10 0.041 0.044 0.036 0.039 0.029 0.033 0.041 0.054 0.068 0.139 0.229 0.278 0.470 0.860 1.170 2.010 Ga dB 28.26 24.27 24.15 21.14 20.07 18.73 16.91 15.86 15.12 13.08 12.04 11.82 10.69 9.97 8.96 8.09 40 30 MSG 2 Fmin dB MSG/MAG & |S21| (dB) Freq GHz 20 MAG 10 S21 0 -10 0 5 10 15 20 FREQUENCY (GHz) Figure 28. MSG/MAG & |S21|2 (dB) @ 4V, 180 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. ATF-531P8 Typical Scattering Parameters, VDS = 4V, IDS = 135 mA Freq. S11 GHz Mag. Ang. dB S21 Mag. Ang. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 50.547 151.8-38.42 39.582 132.2-34.89 31.147 120.2-33.15 25.104 111.8-32.40 21.036 106.3-32.04 17.954 101.6-31.70 15.628 97.9-31.70 13.809 94.8-31.37 12.376 92.0-31.37 11.186 89.6-31.37 7.568 79.7-30.75 6.007 73.3-30.17 5.847 72.0-29.90 4.879 66.0-29.37 3.889 57.6-28.64 2.896 44.6-27.54 2.285 31.8-26.38 1.873 19.7-25.19 1.589 7.9-24.29 1.367-3.8-23.22 1.224-15.3-22.16 1.085-28.2-21.31 0.962-41.0-20.63 0.858-51.7-19.91 0.752-64.0-19.58 0.663-73.7-19.02 0.585-84.8-18.79 0.527-91.3-18.49 0.447-101.9-18.49 0.365-109.6-18.94 0.812-56.4 34.07 0.820-94.6 31.95 0.834-117.3 29.87 0.842-132.4 27.99 0.846-141.4 26.46 0.849-148.7 25.08 0.853-154.4 23.88 0.853-159.0 22.80 0.855-162.7 21.85 0.857-166.0 20.97 0.857-177.3 17.58 0.857 176.2 15.57 0.853 174.7 15.34 0.852 169.2 13.77 0.853 161.7 11.80 0.857 150.8 9.24 0.861 140.9 7.18 0.866 131.6 5.45 0.867 123.5 4.02 0.875 115.1 2.72 0.877 106.9 1.76 0.884 95.6 0.71 0.889 85.3-0.34 0.872 73.9-1.33 0.878 63.6-2.48 0.886 57.6-3.57 0.902 47.2-4.66 0.902 43.7-5.56 0.895 32.1-6.99 0.932 20.6-8.75 dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG dB 0.012 62.6 0.018 45.8 0.022 36.5 0.024 30.5 0.025 27.0 0.026 24.8 0.026 23.2 0.027 22.4 0.027 21.7 0.027 21.2 0.029 21.4 0.031 21.7 0.032 22.5 0.034 23.0 0.037 24.1 0.042 23.9 0.048 22.2 0.055 18.6 0.061 15.1 0.069 10.4 0.078 4.8 0.086-2.6 0.093-10.7 0.101-18.3 0.105-26.2 0.112-33.3 0.115-42.0 0.119-49.2 0.119-56.7 0.113-63.9 0.449-49.1 0.425-85.0 0.397-108.1 0.385-123.7 0.379-132.5 0.375-140.4 0.372-146.4 0.372-151.0 0.371-154.9 0.369-157.9 0.366-168.7 0.366-174.2 0.347-174.8 0.351-179.7 0.358 174.2 0.375 165.7 0.396 157.8 0.417 149.6 0.440 141.8 0.459 133.4 0.474 124.8 0.496 114.1 0.511 103.7 0.548 95.1 0.600 84.0 0.640 73.1 0.663 64.4 0.698 54.7 0.746 46.5 0.716 38.2 36.25 33.42 31.51 30.20 29.25 28.39 27.79 27.09 26.61 26.17 24.17 22.87 22.62 21.57 20.22 16.28 14.11 12.50 11.10 10.16 9.40 8.69 7.93 6.24 5.55 5.05 4.93 4.37 2.93 2.36 Typical Noise Parameters, VDS = 4V, IDS = 135 mA opt Mag. opt Rn/50 Ang. 0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10 0.18 0.26 0.35 0.40 0.51 0.56 0.60 0.73 0.83 1.03 1.15 1.20 1.34 1.57 1.78 1.83 0.20 166.00 0.25 169.00 0.35 171.00 0.40 173.00 0.47 177.20 0.51-174.50 0.56-169.30 0.60-162.90 0.66-157.60 0.68-145.50 0.72-137.10 0.72-135.20 0.78-126.70 0.83-117.00 0.82-107.90 0.85-95.70 0.014 0.018 0.021 0.021 0.022 0.022 0.023 0.030 0.040 0.085 0.140 0.160 0.300 0.630 0.880 1.460 Ga dB 28.57 24.42 24.32 21.25 19.35 17.66 16.37 15.09 14.82 12.76 11.55 11.31 10.55 9.81 8.86 8.17 40 30 MSG 2 Fmin dB MSG/MAG & |S21| (dB) Freq GHz 20 MAG 10 S21 0 -10 0 5 10 15 20 FREQUENCY (GHz) Figure 29. MSG/MAG & |S21|2 (dB) @ 4V, 135 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. ATF-531P8 Typical Scattering Parameters, VDS = 4V, IDS = 75 mA Freq. S11 GHz Mag. Ang. dB S21 Mag. Ang. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 48.399 152.3-37.08 38.230 132.6-32.77 30.121 120.6-31.37 24.294 112.2-30.75 20.379 106.6-30.46 17.405 101.9-30.17 15.165 98.2-29.90 13.404 95.0-29.90 12.005 92.2-29.63 10.859 89.8-29.63 7.351 79.8-29.12 5.839 73.3-28.87 5.681 72.0-28.64 4.742 66.0-28.18 3.780 57.5-27.74 2.813 44.3-26.94 2.220 31.5-25.85 1.824 19.4-25.04 1.546 7.5-24.01 1.334-4.3-23.22 1.190-15.9-22.16 1.059-28.8-21.41 0.937-41.2-20.63 0.836-52.5-20.00 0.737-63.9-19.66 0.646-74.0-19.17 0.581-85.2-18.79 0.515-93.5-18.56 0.439-102.3-18.49 0.369-110.5-19.02 0.930-51.3 33.70 0.889-88.3 31.65 0.876-111.6 29.58 0.867-127.3 27.71 0.862-137.0 26.18 0.858-144.7 24.81 0.857-151.0 23.62 0.856-156.0 22.54 0.854-160.0 21.59 0.857-163.5 20.72 0.853-175.7 17.33 0.853 177.6 15.33 0.848 176.2 15.09 0.846 170.3 13.52 0.848 162.4 11.55 0.850 151.6 8.98 0.853 141.4 6.93 0.861 132.3 5.22 0.861 123.8 3.78 0.868 115.6 2.50 0.873 107.1 1.51 0.875 95.8 0.50 0.881 85.6-0.57 0.871 74.2-1.56 0.873 63.7-2.65 0.885 57.0-3.80 0.891 47.0-4.72 0.912 43.7-5.76 0.895 32.2-7.15 0.933 21.2-8.66 dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG dB 0.014 63.6 0.023 46.8 0.027 36.1 0.029 29.5 0.030 25.9 0.031 23.1 0.032 21.1 0.032 19.9 0.033 18.3 0.033 18.2 0.035 16.3 0.036 16.5 0.037 16.7 0.039 17.0 0.041 17.0 0.045 16.7 0.051 15.4 0.056 12.9 0.063 9.8 0.069 5.5 0.078 0.4 0.085-6.6 0.093-13.8 0.100-21.4 0.104-28.8 0.110-36.3 0.115-43.7 0.118-51.7 0.119-58.5 0.112-65.8 0.524-45.7 0.467-80.7 0.436-103.2 0.415-119.1 0.405-128.4 0.397-136.8 0.392-143.2 0.390-148.2 0.387-152.3 0.384-155.6 0.380-167.2 0.379-173.2 0.360-173.8 0.363-179.0 0.369 174.6 0.385 165.7 0.405 157.5 0.426 149.2 0.447 141.3 0.467 132.8 0.481 124.1 0.501 113.3 0.515 102.9 0.553 94.5 0.604 83.4 0.644 72.5 0.666 63.7 0.700 54.2 0.748 46.0 0.718 37.8 35.39 32.21 30.48 29.23 28.32 27.49 26.76 26.22 25.61 25.17 23.22 22.10 21.86 20.85 19.65 16.29 13.90 12.31 10.85 9.85 9.15 8.19 7.40 6.12 5.28 4.89 4.38 5.43 2.90 2.74 Typical Noise Parameters, VDS = 4V, IDS = 75 mA opt Mag. opt Rn/50 Ang. 0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10 0.15 0.20 0.22 0.30 0.36 0.44 0.50 0.55 0.63 0.80 0.90 0.91 1.14 1.24 1.49 1.61 0.10 130.00 0.15 135.00 0.20 143.00 0.30 148.00 0.35 154.10 0.43 168.70 0.47 179.30 0.58-170.80 0.60-164.80 0.67-150.90 0.72-140.80 0.72-139.50 0.71-129.10 0.74-119.90 0.74-109.70 0.76-97.30 0.016 0.019 0.019 0.022 0.024 0.022 0.022 0.019 0.024 0.050 0.095 0.100 0.180 0.285 0.460 0.720 Ga dB 27.97 23.50 23.02 20.07 17.85 16.35 15.29 14.11 14.01 11.92 11.00 10.56 9.80 9.31 8.41 7.73 40 30 MSG 2 Fmin dB MSG/MAG & |S21| (dB) Freq GHz 20 MAG 10 S21 0 -10 0 5 10 15 20 FREQUENCY (GHz) Figure 30. MSG/MAG & |S21|2 (dB) @ 4V, 75 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 10 ATF-531P8 Typical Scattering Parameters, VDS = 5V, IDS = 135 mA Freq. S11 GHz Mag. Ang. dB S21 Mag. Ang. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 50.734 152.1-39.17 39.967 132.6-34.89 31.517 120.5-33.56 25.418 112.1-32.77 21.322 106.4-32.40 18.207 101.8-32.04 15.852 98.0-31.70 14.014 94.8-31.70 12.559 92.0-31.70 11.351 89.6-31.37 7.681 79.5-31.06 6.099 73.0-30.46 5.931 71.7-30.17 4.946 65.6-29.63 3.943 57.1-29.12 2.935 43.9-27.74 2.318 30.9-26.56 1.899 18.5-25.51 1.605 6.5-24.44 1.381-5.2-23.48 1.233-17.0-22.38 1.090-30.1-21.41 0.966-42.9-20.72 0.858-54.3-20.00 0.751-65.9-19.66 0.662-76.4-19.09 0.577-86.8-18.71 0.512-94.4-18.56 0.447-105.1-18.49 0.370-112.1-18.86 0.805-56.0 34.11 0.815-94.0 32.03 0.831-116.9 29.97 0.839-131.7 28.10 0.844-140.9 26.58 0.846-148.3 25.20 0.850-154.0 24.00 0.852-158.7 22.93 0.855-162.5 21.98 0.854-165.6 21.10 0.855-177.1 17.71 0.857 176.3 15.71 0.851 174.9 15.46 0.851 169.4 13.89 0.852 161.8 11.92 0.857 151.1 9.35 0.859 141.0 7.30 0.870 131.8 5.57 0.867 123.6 4.11 0.877 115.6 2.80 0.881 106.7 1.82 0.885 95.6 0.75 0.892 85.2-0.30 0.875 74.2-1.33 0.883 63.8-2.49 0.886 57.9-3.58 0.913 47.4-4.78 0.908 43.1-5.81 0.891 32.2-6.99 0.928 20.6-8.64 dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG dB 0.011 62.6 0.018 46.6 0.021 36.3 0.023 30.7 0.024 27.2 0.025 24.9 0.026 23.3 0.026 22.3 0.026 21.6 0.027 20.9 0.028 21.1 0.030 22.3 0.031 22.3 0.033 23.3 0.035 24.3 0.041 24.4 0.047 22.8 0.053 19.7 0.060 16.3 0.067 11.8 0.076 6.1 0.085-1.3 0.092-9.1 0.100-17.0 0.104-24.8 0.111-31.8 0.116-40.3 0.118-47.8 0.119-54.9 0.114-62.6 0.468-45.2 0.419-79.7 0.387-102.0 0.364-117.9 0.354-127.0 0.346-135.4 0.342-141.6 0.339-146.5 0.337-150.5 0.335-153.9 0.331-165.0 0.331-170.4 0.336-170.9 0.315-175.8 0.323 178.2 0.343 169.9 0.367 162.1 0.391 154.0 0.417 146.2 0.440 137.7 0.458 129.1 0.482 118.1 0.500 107.5 0.540 98.6 0.593 87.1 0.636 75.8 0.660 66.8 0.699 57.0 0.747 48.4 0.717 39.9 36.64 33.46 31.76 30.43 29.49 28.62 27.85 27.32 26.84 26.24 24.38 23.08 22.82 21.76 19.82 16.43 14.19 12.82 11.24 10.41 9.75 8.94 8.31 6.52 5.87 5.23 6.01 4.78 2.98 2.41 Typical Noise Parameters, VDS = 5V, IDS = 135 mA opt Mag. opt Rn/50 Ang. 0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10 0.45 0.48 0.50 0.55 0.65 0.70 0.77 0.84 0.90 1.06 1.20 1.19 1.40 1.52 1.75 1.88 0.20 154.00 0.32 160.00 0.35 166.00 0.40 170.00 0.46 177.40 0.49-175.10 0.55-168.90 0.58-162.60 0.62-158.20 0.66-145.80 0.69-137.30 0.69-135.40 0.77-126.50 0.81-117.90 0.82-107.50 0.85-95.60 0.037 0.032 0.030 0.030 0.030 0.032 0.031 0.037 0.043 0.085 0.140 0.150 0.320 0.550 0.890 1.530 Ga dB 28.85 25.13 24.43 21.26 19.38 17.90 16.33 15.23 14.60 12.66 11.60 11.38 10.55 9.84 9.05 8.29 40 30 MSG 2 Fmin dB MSG/MAG & |S21| (dB) Freq GHz 20 MAG 10 S21 0 -10 0 5 10 15 20 FREQUENCY (GHz) Figure 31. MSG/MAG & |S21|2 (dB) @ 5V, 135 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 11 ATF-531P8 Typical Scattering Parameters, VDS = 3V, IDS = 135 mA Freq. S11 GHz Mag. Ang. dB S21 Mag. Ang. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 49.888 151.3-37.72 38.989 131.6-33.98 30.415 119.6-32.77 24.416 111.4-32.04 20.452 105.9-31.70 17.443 101.4-31.37 15.178 97.7-31.37 13.405 94.7-31.06 12.012 92.0-31.06 10.853 89.6-30.75 7.342 79.9-30.46 5.828 73.6-29.90 5.676 72.3-29.37 4.738 66.4-29.12 3.774 58.2-28.40 2.812 45.3-27.13 2.219 32.8-26.02 1.821 21.0-24.88 1.547 9.4-23.88 1.337-2.0-22.85 1.198-13.7-21.83 1.066-26.0-21.11 0.948-38.2-20.35 0.840-49.6-19.83 0.745-61.1-19.41 0.665-71.0-18.94 0.582-80.8-18.71 0.524-88.0-18.49 0.457-99.8-18.42 0.381-107.2-18.86 0.823-57.1 33.96 0.826-95.6 31.82 0.842-118.2 29.66 0.846-133.1 27.75 0.851-142.0 26.21 0.850-149.2 24.83 0.855-154.9 23.62 0.856-159.5 22.55 0.859-163.2 21.59 0.857-166.3 20.71 0.857-177.7 17.32 0.858 175.8 15.31 0.855 174.4 15.08 0.855 168.8 13.51 0.854 161.4 11.54 0.858 150.7 8.98 0.860 140.4 6.92 0.868 131.4 5.21 0.866 123.2 3.79 0.877 114.8 2.52 0.876 106.3 1.57 0.880 95.1 0.56 0.883 84.7-0.46 0.874 73.6-1.51 0.878 62.9-2.56 0.884 56.9-3.54 0.906 46.7-4.70 0.907 42.9-5.61 0.893 32.2-6.80 0.925 20.7-8.38 dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG dB 0.013 62.6 0.020 45.7 0.023 36.0 0.025 30.1 0.026 26.8 0.027 24.4 0.027 22.9 0.028 22.1 0.028 21.4 0.029 21.1 0.030 21.0 0.032 21.6 0.034 22.1 0.035 22.6 0.038 22.8 0.044 22.7 0.050 20.7 0.057 17.2 0.064 13.4 0.072 8.5 0.081 2.6 0.088-5.0 0.096-12.9 0.102-20.7 0.107-28.5 0.113-35.9 0.116-43.9 0.119-51.4 0.120-58.7 0.114-66.3 0.427-55.1 0.418-92.8 0.421-115.9 0.420-130.7 0.419-139.0 0.419-146.4 0.419-151.9 0.420-156.1 0.421-159.7 0.419-162.6 0.418-172.9 0.418-178.2 0.410-179.1 0.403 176.0 0.409 169.8 0.423 161.0 0.440 152.8 0.457 144.4 0.475 136.6 0.490 128.0 0.502 119.3 0.519 108.7 0.530 98.4 0.566 90.7 0.613 79.7 0.652 69.3 0.670 60.8 0.704 51.6 0.747 43.7 0.717 35.8 35.84 32.90 31.21 29.90 28.96 28.10 27.50 26.80 26.32 25.73 23.89 22.60 22.23 21.32 19.97 16.15 13.82 12.31 10.81 10.00 9.09 8.20 7.31 6.06 5.32 4.87 4.76 4.29 2.90 2.20 Typical Noise Parameters, VDS = 3V, IDS = 135 mA opt Mag. opt Rn/50 Ang. 0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10 0.25 0.30 0.30 0.36 0.45 0.52 0.66 0.70 0.87 1.02 1.13 1.24 1.34 1.58 1.78 1.88 0.20 166.00 0.25 169.00 0.35 171.00 0.40 173.00 0.46 176.80 0.52-174.70 0.56-169.80 0.62-162.80 0.65-157.90 0.67-145.70 0.71-136.80 0.73-135.10 0.82-126.20 0.83-116.90 0.81-107.50 0.83-95.40 0.020 0.022 0.018 0.019 0.020 0.021 0.025 0.028 0.042 0.082 0.140 0.175 0.380 0.645 0.870 1.350 Ga dB 28.47 24.36 24.24 21.17 19.30 18.08 16.26 15.33 14.62 12.52 11.53 11.40 10.57 9.67 8.59 7.76 40 30 MSG 2 Fmin dB MSG/MAG & |S21| (dB) Freq GHz 20 MAG 10 S21 0 -10 0 5 10 15 20 FREQUENCY (GHz) Figure 32. MSG/MAG & |S21|2 (dB) @ 3V, 135 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 12 Device Models Refer to Avago Technologies' Web Site www.avagotech.com/rf Ordering Information Part Number No. of Devices Container ATF-531P8-TR1 3000 7" Reel ATF-531P8-TR2 10000 13"Reel ATF-531P8-BLK 100 antistatic bag 2 x 2 LPCC (JEDEC DFP-N) Package Dimensions D1 pin1 P D pin1 8 1 2 e E1 3 R 3PX 4 5 Top View Bottom View A1 A A2 End View Side View DIMENSIONS SYMBOL A A1 A2 b D D1 E E1 e P L MIN. 0.70 0 0.225 1.9 0.65 1.9 1.45 0.20 0.35 NOM. 0.75 0.02 0.203 REF 0.25 2.0 0.80 2.0 1.6 0.50 BSC 0.25 0.40 DIMENSIONS ARE IN MILLIMETERS 13 E 6 b L A 7 MAX. 0.80 0.05 0.275 2.1 0.95 2.1 1.75 0.30 0.45 PCB Land Pattern and Stencil Design 2.72 (107.09) 2.80 (110.24) 0.70 (27.56) 0.63 (24.80) 0.25 (9.84) 0.22 (8.86) 0.25 (9.84) PIN 1 0.20 (7.87) 0.32 (12.79) PIN 1 0.50 (19.68) 0.50 (19.68) 1.54 (60.61) 1.60 (62.99) Solder mask RF transmission line + 0.25 (9.74) 0.28 (10.83) 0.60 (23.62) 0.63 (24.80) 0.72 (28.35) 0.80 (31.50) 0.15 (5.91) 0.55 (21.65) Stencil Layout (top view) PCB Land Pattern (top view) Device Orientation 4 mm REEL 8 mm CARRIER TAPE USER FEED DIRECTION COVER TAPE 14 3PX 3PX 3PX 3PX Tape Dimensions P0 P D P2 E F W + + D1 Tt t1 K0 10 Max 10 Max A0 DESCRIPTION CAVITY PERFORATION CARRIER TAPE COVER TAPE DISTANCE B0 SYMBOL SIZE (mm) SIZE (inches) LENGTH A0 2.30 0.05 0.091 0.004 WIDTH B0 2.30 0.05 0.091 0.004 DEPTH 1.00 0.05 0.039 0.002 PITCH BOTTOM HOLE DIAMETER K0 P D1 4.00 0.10 1.00 + 0.25 0.157 0.004 0.039 + 0.002 DIAMETER D 1.50 0.10 0.060 0.004 PITCH 4.00 0.10 0.157 0.004 POSITION P0 E 1.75 0.10 0.069 0.004 WIDTH W THICKNESS t1 8.00 + 0.30 8.00 - 0.10 0.254 0.02 0.315 0.012 0.315 0.004 0.010 0.0008 WIDTH C 5.4 0.10 0.205 0.004 TAPE THICKNESS Tt 0.062 0.001 0.0025 0.0004 CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 0.05 0.138 0.002 CAVITY TO PERFORATION P2 2.00 0.05 0.079 0.002 (LENGTH DIRECTION) For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright (c) 2005-2008 Avago Technologies. All rights reserved. Obsoletes 5988-9990EN AV02-0845EN - August 26, 2008