AMMP-6442 37- 40 GHz, 1W Linear Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6442 MMIC is a 1W linear power amplifier in a surface mount package designed for use in transmitters that operate at frequencies between 37GHz and 40GHz. In the operational band, it provides 30dBm of output power (P-1dB) and 23dB of small-signal gain. This PA is also designed for high linear applications with typical performance of 36dBm OIP3 at 18dBm SCL output. 5x5mm SMT package 1 watt output power 50 match on input and output ESD protection (50V MM, and 250V HBM) Typical Performance (Vd = 5V, Id(q) = 0.7A) Frequency range 37 to 40 GHz Applications Small signal Gain of 23dB (Typ.) Point-to-Point Radio Systems Output power @P-1 of 30dBm (Typ.) mmW Communications Input and Output return losses -8dB OIP3 of 35dBm @Po=18dBm (scl) Package Diagram Vd1 Vd2 Vd3 1 2 3 Functional Block Diagram 1 RF IN 8 4 2 3 RF OUT 8 7 6 5 Vg1 Vg2 Vd3 Note: 1. This MMIC uses depletion mode pHEMT devices. Negative supply is used for DC gate biasing. RoHS-Exemption 4 7 6 Pin Function 1 2 3 4 5 6 7 8 Vd1 Vd2 Vd3 RF OUT Vd3 Vg2 Vg1 RF IN 5 Attention: Observe Precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A): 50V ESD Human Body Model (Class 1A): 250V Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. Please refer to hazardous substances table on page 7. Note: MSL Rating = Level 2A Electrical Specifications 1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25C. 2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6442 published specifications. 3. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies. 4. Specifications are derived from measurements in a 50 test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (opt) matching. Table 1. RF Electrical Characteristics TA=25C, Vd=5.0V, Idq=0.7V, Vg=-1V, Zo=50 Parameter Min Typ. Max 40 Unit Operational Frequency, Freq 37 Small-signal Gain, Gain 20 23 dB GHz Output Power at 1dB Gain Compression, P-1dB 28 30 dBm Relative Third Order Inter-modulation level (f=10MHz, Po=+12dBm, SCL), IM3 36 dBc Input Return Loss, Rlin 8 dB Output Return Loss, Rlout 8 dB Reverse Isolation, Isolation 45 dB Table 2. Recommended Operating Range 1. Ambient operational temperature TA = 25C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34C) as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25C calculated from measured data. Description Min. Drain Supply Current, Idq Gate Supply Operating Voltage, Vg Typical Max. 700 -1.3 -1 -0.7 Unit Comments mA Vd = 5V, Vg set for Id Typical V Idq=700mA Table 3. Thermal Properties Parameter Test Conditions Value Channel Temperature, Tch Thermal Resistance [1] (Channel-to-Base Plate), ch-bs Tch=150 C Channel-to-backside Thermal Resistance Tchannel(Tc)=34C Thermal Resistance at backside temperature Tb=25C Jc = 12 C/W Note: 1. Assume AnPb soldering to an evaluation RF module at 90.5 C base plate temperatures. Absolute Minimum and Maximum Ratings Table 4. Minimum and Maximum Ratings [1] Description Pin Min. Drain Supply Voltage, Vd Gate Supply Voltage, Vg -2 Max. Unit 5.5 V 0 Power Dissipation, PD 6 CW Input Power, Pin 20 Channel Temperature Storage Temperature Maximum Assembly Temperature -65 Comments dBm +150 C +155 C +260 C CW 30 second maximum Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2 Typical Performance (Data was obtained from a 2.4mm connector based test fixture and includes connector and board losses. Connector and board loss is approximately 0.75dB at input and output ports for an approximate total of 1.5dB.) (TA = 25C, Vdd = 5V, Id(q) = 0.7 A, Vg = -1 V, Zin = Zout = 50 ) 30 S21[dB] S12[dB] 0 -35 -5 -40 15 -45 10 -50 5 -55 -20 -60 -25 0 30 32 34 36 38 40 42 44 Frequency [GHz] 46 48 Return Loss [dB] 20 S12 [dB] S21[dB] 25 -30 34 36 38 40 42 Frequency [GHz] 44 46 48 50 10 30 8 25 Noise Figure [dB] Gain[dB], P-1[dBm], PAE[%] 32 Figure 2. Typical return Loss (input and output) 20 15 P-1 PAE@P-1 P-3 PAE@P-3 10 5 35 36 6 4 2 0 37 38 Frequency [GHz] 39 0 40 Figure 3. Typical output power (P-1 and P-3) vs. frequency 35 37 39 41 Frequency [GHz] 43 45 Figure 4. Typical noise figure 40 0 SCL=10[dBc] SCL=15[dBc] SCL=18.5[dBc] -20 -40 -50 -60 36 37 38 Frequency [GHz] 39 40 Figure 5. Typical third order inter-modulation product level vs. frequency at different single carrier output level (SCL) 30 1300 1200 25 1100 20 1000 15 900 10 800 5 700 0 600 -5 -15 -10 -5 0 Pin [dBm] 5 10 15 500 Figure 6. Typical output power, PAE, and total drain current versus Input power at 38GHz Ids [mA] -30 35 1400 Pout(dBm) PAE[%] Id(total) 35 Po[dBm], and, PAE[%] -10 Relative IM3 Level [dBm] S11[dB] S22[dB] 30 35 3 -15 50 Figure 1. Typical gain and reverse Isolation -70 -10 Typical over temperature dependencies (TA = 25C, Vdd = 5V, Idq = 0.7 A, Vg = -1 V, Zin = Zout = 50 ) 0 S21[dB] -10 S11_25 S11_-40 S11_85 -15 -20 20 25 30 35 40 Frequency[GHz] 45 50 Figure 7. Typical S11 over temperature P-1 [dBm] S22[dB] -5 -10 S22_25 S22_-40 S22_85 -20 20 25 30 35 40 Frequency[GHz] 45 30 K() Meas_25C K() Meas_85C K() Meas_n40C OIP3 [dBm] 10 5 35 36 35 40 Frequency (GHz) Figure 11. Typical K-factor over temperature 4 37 38 39 Frequency [GHz] 40 41 42 -10 40 -15 35 -20 30 -25 25 -30 20 -35 15 -40 OIP3(-40C) OIP3(85C) IM3(25C) 0 30 50 45 10 25 45 P-1_-40deg P-1_25deg P-1_85deg 5 0 20 35 40 Frequency[GHz] Figure 10. Typical P1 over temperature 20 K_factor 25 33 32 31 30 29 28 27 26 25 24 23 34 50 Figure 9. Typical S22 over temperature 15 20 Figure 8. Typical Gain over temperature 0 -15 S21_25 S21_-40 S21_85 45 50 34 35 36 -45 OIP3(25C) IM3(-40C) IM3(85C) 37 38 39 Frequency [GHz] -50 -55 40 41 Figure 12. Typical IM3 level over temperature at Po=18dBm, SCL 42 IM3 Level [dBc] S11[dB] -5 30 28 26 24 22 20 18 16 14 12 10 Typical Scattering Parameters [1], (TA = 25C, Vd =5 V, ID = 0.7A, Zin = Zout = 50 ) Freq S11 [dB] S11 Mag. S11 Ang. S21 [dB] S21 Mag. S21 Ang. S12 [dB] S12 Mag. S12 Ang. S22 [dB] S22 Mag. S22 Ang. 20 -2.90 0.72 164.53 -23.81 0.06 -141.01 -48.88 3.60E-03 -57.97 -2.69 0.73 21.40 21 -3.00 0.71 86.65 -15.74 0.16 115.71 -52.28 2.43E-03 -104.05 -2.41 0.76 -70.16 22 -3.08 0.70 4.08 -7.22 0.44 0.83 -45.40 5.37E-03 152.36 -2.25 0.77 -161.69 23 -3.18 0.69 -87.20 0.27 1.03 -131.23 -46.50 4.73E-03 103.80 -2.68 0.73 112.41 24 -3.62 0.66 176.98 4.45 1.67 92.82 -48.17 3.90E-03 -13.03 -3.39 0.68 32.65 25 -4.52 0.59 84.30 7.24 2.30 -36.02 -48.90 3.59E-03 -66.94 -3.55 0.66 -45.60 26 -5.00 0.56 -8.28 9.35 2.93 -154.65 -50.90 2.85E-03 -147.71 -2.98 0.71 -125.74 27 -4.11 0.62 -104.27 11.05 3.57 81.71 -48.42 3.79E-03 176.54 -2.72 0.73 155.15 28 -3.00 0.71 168.96 13.11 4.52 -26.13 -48.48 3.77E-03 100.75 -3.20 0.69 77.20 29 -2.20 0.78 90.69 16.36 6.57 -143.75 -44.95 5.66E-03 16.82 -4.92 0.57 -11.91 30 -3.25 0.69 7.32 21.27 11.57 95.82 -42.75 7.28E-03 -67.62 -7.33 0.43 -126.78 31 -5.62 0.52 -81.47 24.48 16.76 -48.77 -45.14 5.53E-03 -173.22 -7.23 0.44 132.40 32 -8.31 0.38 151.65 23.09 14.27 172.96 -48.44 3.78E-03 113.12 -5.77 0.51 54.23 33 -7.80 0.41 55.51 22.16 12.83 59.22 -48.10 3.94E-03 83.43 -6.33 0.48 -12.99 34 -6.69 0.46 -3.34 23.03 14.18 -64.46 -47.20 4.36E-03 14.73 -12.04 0.25 -100.71 35 -5.11 0.56 -64.50 23.07 14.25 169.26 -46.03 5.00E-03 -72.16 -13.67 0.21 6.05 36 -5.77 0.51 -136.84 22.91 13.97 48.13 -47.62 4.16E-03 -147.24 -8.21 0.39 -77.65 37 -10.68 0.29 144.16 24.12 16.07 -78.82 -50.37 3.03E-03 131.49 -7.25 0.43 -146.43 38 -32.53 0.02 70.22 23.59 15.11 148.85 -55.62 1.66E-03 37.70 -10.74 0.29 121.48 39 -16.09 0.16 123.23 23.65 15.23 12.30 -54.20 1.95E-03 -76.46 -15.37 0.17 -4.18 40 -29.19 0.03 44.21 20.79 10.95 -116.29 -43.80 6.46E-03 70.75 -13.01 0.22 -123.56 41 -13.30 0.22 -59.99 21.33 11.66 112.89 -44.57 5.91E-03 -75.57 -8.63 0.37 173.01 42 -11.59 0.26 149.87 20.57 10.68 -35.23 -43.90 6.39E-03 146.83 -6.41 0.48 75.90 43 -12.74 0.23 70.60 14.55 5.34 -173.04 -46.59 4.69E-03 7.19 -10.12 0.31 4.46 44 -10.80 0.29 4.51 12.27 4.10 48.86 -47.60 4.17E-03 -74.19 -15.97 0.16 -73.99 45 -7.28 0.43 -68.05 6.64 2.15 -95.90 -50.63 2.94E-03 175.00 -21.81 0.08 -64.83 46 -5.57 0.53 -149.37 -0.54 0.94 129.12 -45.96 5.04E-03 157.54 -11.06 0.28 -107.83 47 -5.11 0.56 128.69 -7.71 0.41 4.98 -43.66 6.56E-03 42.47 -7.63 0.42 164.84 48 -5.10 0.56 40.23 -14.75 0.18 -116.43 -47.75 4.10E-03 -27.21 -7.78 0.41 65.52 49 -5.16 0.55 -55.86 -21.51 0.08 127.74 -40.36 9.59E-03 -151.21 -7.59 0.42 -65.16 50 -4.69 0.58 -154.92 -33.07 0.02 27.73 -41.94 8.00E-03 170.09 0.55 -177.64 -5.13 Note: 1. Data obtained from 2.4-mm connecter based modules, and this data is including connecter loss, and board loss. The measurement reference plane is at the RF connectors. 5 Biasing and Operation Recommended quiescent DC bias condition for optimum power and linearity performances is Vd=5 volts with Vg (-1V) set for Id=700 mA. Minor improvements in performance are possible depending on the application. The drain bias voltage range is 3 to 5V. A single DC gate supply connected to Vg will bias all gain stages. Muting can be accomplished by setting Vg to the pinch-off voltage Vp (-2V). A typical DC bias configuration is shown in Figure 13. Vd3 may be biased from either side (Pin 3 or Pin 5). The RF input and output ports are DC decoupled internally. No ground wires are needed since ground connections are made with plated through-holes to the backside of the device. 100 pF > 0.1 F 1 7 > 0.1 F 100 pF 6 Note: Vd3 may be biased from either side. 3 8 RF_IN Vgg 2 4 RF_OUT > 0.1 F Vdd 5 100 pF Figure 13. Schematic and recommended assemble example Note: No RF performance degradation is seen due to ESD up to 250V HBM and 50V MM. The DC characteristics in general show increased leakage at lower ESD discharge voltages. The user is reminded that this device is ESD sensitive and needs to be handled with all necessary ESD protocols. 6 AMMP-64xx Part Number Ordering Information Part Number Devices Per Container Container AMMP-64xx-BLK 10 Antistatic bag AMMP-64xx-TR1 100 7" Reel AMMP-64xx-TR2 500 7" Reel Package Dimension, PCB Layout and Tape and Reel information Please refer to Avago Technologies Application Note 5521, AMxP-xxxx production Assembly Process (Land Pattern B). Names and Contents of the Toxic and Hazardous Substances or Elements in the Products Part Name Toxic and Hazardous Substances or Elements Lead (Pb) (Pb) Mercury (Hg) Hg Cadmium (Cd) Cd Hexavalent (Cr(VI)) Cr(VI) Polybrominated biphenyl (PBB) PBB 100pF capacitor : indicates that the content of the toxic and hazardous substance in all the homogeneous materials of the part is below the concentration limit requirement as described in SJ/T 11363-2006. : indicates that the content of the toxic and hazardous substance in at least one homogeneous material of the part exceeds the concentration limit requirement as described in SJ/T 11363-2006. (The enterprise may further explain the technical reasons for the "x" indicated portion in the table in accordance with the actual situations.) SJ/T 11363-2006 SJ/T 11363-2006 "x" Note: EU RoHS compliant under exemption clause of "lead in electronic ceramic parts (e.g. piezoelectronic devices)" For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright (c) 2005-2011 Avago Technologies. All rights reserved. AV02-2399EN - September 30, 2011 Polybrominated diphenylether (PBDE) PBDE