AON6424
30V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 41A
R
DS(ON)
(at V
GS
=10V) < 8.5mΩ
R
DS(ON)
(at V
GS
= 4.5V) < 10mΩ
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
The AON6424 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge.This device is
suitable for use as a high side switch in SMPS and
general purpose applications.
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
30V
Drain-Source Voltage
30
G
D
S
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View Bottom View
V
DS
V
GS
I
DM
I
AS
, I
AR
E
AS
, E
AR
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
3.5 60
5
P
D
W
Power Dissipation
A
P
DSM
W
T
A
=70°C
25
1.3
T
A
=25°C
A
T
A
=25°C I
DSM
A
T
A
=70°C
I
D
41
26
T
C
=25°C
T
C
=100°C
mJ
Avalanche Current
C
9
Continuous Drain
Current
32
11
A36
V
Drain-Source Voltage
30
Units
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
V±12Gate-Source Voltage
90Pulsed Drain Current
C
Maximum Junction-to-Ambient
°C/W
R
θJA
21
50 25
Continuous Drain
Current
Parameter Typ Max
T
C
=25°C
2
10
T
C
=100°C
Avalanche energy L=0.05mH
C
Power Dissipation
B
G
D
S
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View Bottom View
Rev1 : Oct 2010
www.aosmd.com Page 1 of 6
AON6424
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage 0.8 1.2 1.7 V
I
D(ON)
90 A
6.8 8.5
T
J
=125°C 11 13.5
7.7 10 mΩ
g
FS
100 S
V
SD
0.7 1 V
I
S
30 A
C
iss
1260 1580 1900 pF
C
oss
110 160 210 pF
C
rss
60 100 140 pF
R
g
0.7 1.4 2.1 Ω
Q
g
(10V) 20 26 32 nC
Q
g
(4.5V) 9 12 15 nC
Q
gs
2 3 4 nC
Q
gd
1.5 3 4.5 nC
t
D(on)
5 ns
t
2
ns
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
V
DS
=V
GS
I
D
=250µA
I
DSS
µA
V
DS
=0V, V
GS
= ±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
mΩ
V
=10V, V
=15V, R
=0.75
Ω
,
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=20A
Forward Transconductance I
S
=1A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
V
DS
=5V, I
D
=20A
V
GS
=4.5V, I
D
=20A
Diode Forward Voltage
Reverse Transfer Capacitance
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Gate Source Charge
Gate Drain Charge
Total Gate Charge
t
r
2
ns
t
D(off)
29 ns
t
f
3 ns
t
rr
810 12 ns
Q
rr
12 16 20 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
V
GS
=10V, V
DS
=15V, R
L
=0.75
Ω
,
R
GEN
=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
Turn-Off DelayTime
Turn-On Rise Time
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev1 : Oct 2010 www.aosmd.com Page 2 of 6
AON6424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
2
4
6
8
10
12
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=20A
VGS=10V
ID=20A
25°C
125
°
C
V
DS
=5V
VGS=4.5V
VGS=10V
0
20
40
60
80
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=2V
4V
6V
10V
2.5V
40
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
2
4
6
8
10
12
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=20A
VGS=10V
ID=20A
0
5
10
15
20
25
30
0 2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125
°
C
V
DS
=5V
VGS=4.5V
VGS=10V
ID=20A
25
°
C
125°C
0
20
40
60
80
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=2V
4V
6V
10V
2.5V
Rev1 : Oct 2010 www.aosmd.com Page 3 of 6
AON6424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 5 10 15 20 25 30
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
600
1200
1800
2400
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Coss
C
rss
VDS=12.5V
ID=20A
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
10ms
1ms
DC
RDS(ON)
TJ(Max)=150°C
T
C
=25°C
100
µ
40
0
2
4
6
8
10
0 5 10 15 20 25 30
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
600
1200
1800
2400
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Coss
C
rss
VDS=12.5V
ID=20A
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
10ms
1ms
DC
RDS(ON)
TJ(Max)=150°C
T
C
=25°C
100
µ
RθJC=5°C/W
Rev1 : Oct 2010 www.aosmd.com Page 4 of 6
AON6424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
5
10
15
20
25
30
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°
°°
°C)
Figure 13: Power De-rating (Note F)
0
10
20
30
40
50
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°
°°
°C)
Figure 14: Current De-rating (Note F)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
TA=25°C
1
10
100
1000
1 10 100 1000
IAR (A) Peak Avalanche Current
Time in avalanche, tA(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
TA=25°C
TA=150°C
TA=100°C
TA=125°C
40
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
5
10
15
20
25
30
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°
°°
°C)
Figure 13: Power De-rating (Note F)
0
10
20
30
40
50
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°
°°
°C)
Figure 14: Current De-rating (Note F)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
TA=25°C
RθJA=60°C/W
1
10
100
1000
1 10 100 1000
IAR (A) Peak Avalanche Current
Time in avalanche, tA(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
TA=25°C
TA=150°C
TA=100°C
TA=125°C
Rev1 : Oct 2010 www.aosmd.com Page 5 of 6
AON6424
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vgs
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
AR
AR
t
rr
Rev1 : Oct 2010 www.aosmd.com Page 6 of 6