1C3D02065E Rev. B, 10-2019
C3D02065E
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
• 650-Volt Schottky Rectier
• Optimized for PFC Boost Diode Application
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coecient on VF
Benets
• Replace Bipolar with Unipolar Rectiers
• Essentially No Switching Losses
• Higher Eciency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies (SMPS)
• Boost diodes in PFC or DC/DC stages
• Free Wheeling Diodes in Inverter stages
• AC/DC converters
Package
TO-252-2
Part Number Package Marking
C3D02065E TO-252-2 C3D02065
VRRM = 650 V
IF (TC=135˚C) = 4 A
Qc = 5.8 nC
PIN 1
PIN 2 CASE
Maximum Ratings (TC = 25 ˚C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Note
VRRM Repetitive Peak Reverse Voltage 650 V
VRSM Surge Peak Reverse Voltage 650 V
VDC DC Blocking Voltage 650 V
IFContinuous Forward Current
8
4
2
A
TC=25˚C
TC=135˚C
TC=161˚C
Fig. 3
IFRM Repetitive Peak Forward Surge Current 11
7.5 ATC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
IFSM Non-Repetitive Peak Forward Surge Current 16.5
15 ATC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse Fig. 8
IFSM Non-Repetitive Peak Forward Surge Current 120
110 ATC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse Fig. 8
Ptot Power Dissipation 39.5
17 WTC=25˚C
TC=110˚C Fig. 4
dV/dt Diode dV/dt ruggedness 200 V/ns VR=0-650V
∫i2dt i2t value 1.35
1.12 A2sTC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
TJ , Tstg Operating Junction and Storage Temperature -55 to
+175 ˚C
2C3D02065E Rev. B, 10-2019
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForward Voltage 1.5
1.8
1.7
2.4 VIF = 2 A TJ=25°C
IF = 2 A TJ=175°C Fig.1
IRReverse Current 3.5
7.5
18
60 μAVR = 650 V TJ=25°C
VR = 650 V TJ=175°C Fig. 2
QCTotal Capacitive Charge 5.8 nC
VR = 400 V, IF = 2A
di/dt = 500 A/μS
TJ = 25°C
Fig. 5
C Total Capacitance
175
10.5
8.5
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Fig. 6
ECCapacitance Stored Energy 0.8 μJ VR = 400 V Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit
RθJC TO-252 Package Thermal Resistance from Junction to Case 3.8 °C/W
Typical Performance
Figure 1. Forward Characteristics
2
3
4
5
6
Foward Current, I
F(A)
T
J
= -55 °C
T
J
= 25 °C
T
J
= 75 °C
T
J
= 175 °C
T
J
= 125 °C
0
1
2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Foward Current, I
Foward Voltage, VF(V)
IF (A)
VF (V)
40
60
80
100
Reverse Leakage Current, I
RR
(uA)
TJ= 175 °C
TJ= 125 °C
TJ= 75 °C
T
= 25
°
0
20
0 200 400 600 800 1000 1200
Reverse Leakage Current, I
Reverse Voltage, V
R
(V)
TJ= -55 °C
T
J
= 25
°
Figure 2. Reverse Characteristics
VR (V)
IR (mA)
3C3D02065E Rev. B, 10-2019
10
15
20
25
30
I
F(A)
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
0
5
10
25 50 75 100 125 150 175
T
C
(°C)
Figure 3. Current Derating Figure 4. Power Derating
15
20
25
30
35
40
45
PTOT
(W)
0
5
10
15
25 50 75 100 125 150 175
T
C
(°C)
Figure 5. Total Capacitance Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
Typical Performance
3
4
5
6
7
8
9
Capacitive Charge, Q
C(nC)
Conditions:
T
J
= 25 °C
0
1
2
3
0 100 200 300 400 500 600 700
Capacitive Charge, Q
Reverse Voltage, VR(V)
80
100
120
140
160
180
200
Capacitance (pF)
Conditions:
T
J
= 25 °C
F
test
= 1 MHz
V
test
= 25 mV
0
20
40
60
0 1 10 100 1000
Capacitance (pF)
Reverse Voltage, VR(V)
IF(peak) (A)
TC ˚C TC ˚C
PTot (W)
C (pF)
VR (V)
QC (nC)
VR (V)
4C3D02065E Rev. B, 10-2019
Typical Performance
Figure 9. Transient Thermal Impedance
100E
-
3
1
0.5
0.3
0.1
0.05
0.02
SinglePulse
10E-3
100E
-
3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
0.01
Thermal Resistance (˚C/W)
T (Sec)
Figure 7. Capacitance Stored Energy
0.8
1
1.2
1.4
1.6
1.8
2
Capacitance Stored Energy, E
C
(µJ)
0
0.2
0.4
0.6
0 100 200 300 400 500 600 700
Capacitance Stored Energy, E
Reverse Voltage, VR(V)
VR (V)
EC(mJ)
100
1,000
TJ_initial = 25 °C
TJ_initial = 110 °C
10
10E-6 100E-6 1E-3 10E-3
1000
100
10
Figure 8. Non-Repetitive Peak Forward Surge Current
versus Pulse Duration (sinusoidal waveform)
tp (s)
1E-05 1E-04 1E-03 1E-02
IFSM (A)
5C3D02065E Rev. B, 10-2019
Recommended Solder Pad Layout
Part Number Package Marking
C3D02065E TO-252-2 C3D02065
TO-252-2
Note: Recommended soldering proles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
Tjb June 2015
MX+DI+PSI
Package Dimensions
Package TO-252-2
SYMBOL
MILLIMETERS
MIN
MAX
A
2.159
2.413
A1
0
0.13
b
0.64
0.89
b
2
0.653
1.143
b
3
5.004
5.6
c
0.457
0.61
c2
0.457
0.864
D
5.867
6.248
D1
5.21
-
E
6.35
6.73
E1
4.32
-
e
4.58 BSC
H
9.65
10.414
L
1.106
1.78
L2
0.51 BSC
L3
0.889
1.27
L4
0.64
1.01
Ɵ
0°
8°
66 C3D02065E Rev. B, 10-2019
Copyright © 2019 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac debrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air trac control systems.
Notes
• Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
• Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
• SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Related Links
Diode Model
VT
RT
Diode Model CSD10060
Vf T = VT + If*RT
VT= 0.92 + (Tj * -1.35*10-3)
RT= 0.052 + (Tj * 0.29*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VfT = VT+If*RT
VT = 0.98+(TJ* -1.1*10-3)
RT = 0.18+(TJ* 1.8*10-3)