LM833
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = –15 V, TA = 25°C, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Input Offset Voltage (RS = 10 Ω, VO = 0 V) VIO – 0.3 5.0 mV
Average Temperature Coefficient of Input Offset Voltage ∆VIO/∆T – 2.0 – µV/°C
RS = 10 Ω, VO = 0 V, TA = Tlow to Thigh
Input Offset Current (VCM = 0 V, VO = 0 V) IIO – 10 200 nA
Input Bias Current (VCM = 0 V, VO = 0 V) IIB – 300 1000 nA
Common Mode Input Voltage Range VICR –
–12 +14
–14 +12
–V
Large Signal Voltage Gain (RL = 2.0 kΩ, V O = ±10 V AVOL 90 110 – dB
Output Voltage Swing: V
RL = 2.0 kΩ, VID = 1.0 V VO+ 10 13.7 –
RL = 2.0 kΩ, VID = 1.0 V VO– – –14.1 –10
RL = 10 kΩ, VID = 1.0 V VO+ 12 13.9 –
RL = 10 kΩ, VID = 1.0 V VO– – –14.7 –12
Common Mode Rejection (Vin = ±12 V) CMR 80 100 – dB
Power Supply Rejection (VS = 15 V to 5.0 V, –15 V to –5.0 V) PSR 80 115 – dB
Power Supply Current (VO = 0 V, Both Amplifiers) ID– 4.0 8.0 mA
AC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = –15 V, TA = 25°C, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Slew Rate (Vin = –10 V to +10 V, RL = 2.0 kΩ, AV = +1.0) SR5.0 7.0 – V/µs
Gain Bandwidth Product (f = 100 kHz) GBW 10 15 – MHz
Unity Gain Frequency (Open Loop) fU– 9.0 – MHz
Unity Gain Phase Margin (Open Loop) θm– 60 – Deg
Equivalent Input Noise Voltage (RS = 100 Ω, f = 1.0 kHz) en– 4.5 – nVHz
Equivalent Input Noise Current (f = 1.0 kHz) in– 0.5 – pAHz
Power Bandwidth (VO = 27 Vpp, RL = 2.0 kΩ, THD ≤ 1.0%) BWP – 120 – kHz
Distortion (RL = 2.0 kΩ, f = 20 Hz to 20 kHz, VO = 3.0 Vrms,
AV = +1.0) THD – 0.002 – %
Channel Separation (f = 20 Hz to 20 kHz) CS– –120 – dB
Figure 1. Maximum Power Dissipation
versus Temperature Figure 2. Input Bias Current versus Temperature
TA, AMBIENT TEMPERATURE (°C)
P , MAXIMUM POWER DISSIPATION (mW)
D
I , INPUT BIAS CURRENT (nA)
IB
800
600
400
200
0
-50 0 50 100 150
1000
800
600
400
200
0
-55 -25 0 25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
VCC = +15 V
VEE = -15 V
VCM = 0 V