Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BVDSS 30V
▼ Single Drive Requirement RDS(ON) 25mΩ
▼ Lower On-resistance ID28A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 25
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.2
Continuous Drain Current, VGS @ 10V 18
Pulsed Drain Current195
Gate-Source Voltage +25
Continuous Drain Current, VGS @ 10V 28
Parameter Rating
Drain-Source Voltage 30
200903053
1
AP40T03GI
RoHS-compliant Product
G
D
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
G
D
S
A
dvanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for all
commercial-industrial through hole applications. GDSTO-220CFM(I)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=18A - - 25 mΩ
VGS=4.5V, ID=14A - - 45 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=18A - 16 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=125oC) VDS=24V ,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS= +25V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=18A - 9 15 nC
Qgs Gate-Source Charge VDS=25V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC
td(on) Turn-on Delay Time2VDS=15V - 7 - ns
trRise Time ID=18A - 56 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 16 - ns
tfFall Time RD=0.83Ω-5-
ns
Ciss Input Capacitance VGS=0V - 610 980 pF
Coss Output Capacitance VDS=25V - 160 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 117 - pF
RgGate Resistance f=1.0MHz - 1.5 2.3 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=18A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=14A, VGS=20V - 20 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP40T03GI
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
AP40T03GI
0
20
40
60
80
0.0 2.0 4.0 6.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
7.0V
5.0V
4.5V
VG=3.0V
0
20
40
60
80
100
0.0 2.0 4.0 6.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC
10V
7.0V
5.0V
4.5V
VG=3.0V
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=18A
VG=10V
0
2
4
6
8
10
12
14
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=150oC
0.5
1.0
1.5
2.0
2.5
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized VGS(th) (V)
15
30
45
60
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=14A
T
A
=
25
o
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
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AP40T03GI
0
1
10
100
1000
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TC=25oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
4
8
12
16
0 4 8 12 16 20
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I D=18A
VDS =15V
VDS =20V
V DS =25V
100
1000
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Coss
Crss
Q
VG
4.5V
QGS QGD
QG
Charge
0
10
20
30
40
0246
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =5V
