Ordering number : ENN7319 CPH6413 Preliminary CPH6413 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features * * Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2151A [CPH6413] 0.15 2.9 5 4 0.6 6 0.2 * 0.6 1.6 2.8 0.05 3 0.95 0.2 2 0.7 0.9 1 0.4 Specifications SANYO : CPH6 Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Symbol Conditions Ratings VDSS VGSS Unit 20 V 10 V 5 A ID Drain Current (Pulse) IDP PW10s, duty cycle1% 20 A Allowable Power Dissipation PD Mounted on a ceramic board (1200mm20.8mm) 1.6 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol Conditions V(BR)DSS IDSS ID=1mA, VGS=0 typ Unit max 20 V VDS=20V, VGS=0 1 A 10 A IGSS VGS(off) VGS=8V, VDS=0 VDS=10V, ID=1mA 0.4 yfs RDS(on)1 VDS=10V, ID=3A 6.3 ID=3A, VGS=4V 31 41 m RDS(on)2 ID=1.5A, VGS=2.5V 38 54 m Marking : KP (c) 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Ratings min 1.3 9 V S Continued on next page. www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Publication Order Number: CPH6413/D CPH6413 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time min typ VDS=10V, f=1MHz VDS=10V, f=1MHz td(off) tf Fall Time Ratings Conditions Unit max 570 pF 110 pF VDS=10V, f=1MHz See specified Test Circuit. 80 pF 13 ns See specified Test Circuit. 16 ns See specified Test Circuit. 55 ns See specified Test Circuit. 54 ns 7.6 nC 1.2 nC Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=4V, ID=5A VDS=10V, VGS=4V, ID=5A VDS=10V, VGS=4V, ID=5A Diode Forward Voltage VSD IS=5A, VGS=0 2.1 nC 0.86 1.2 V Switching Time Test Circuit VDD=10V VIN 4V 0V ID=3A RL=3.33 VOUT VIN D PW=10s D.C.1% G CPH6413 P.G 50 ID -- VDS V 1.5 2 5 4 3 C --25 C 3 6 2 Ta= 75 2.0V VDS=10V 7 Drain Current, ID -- A 4 ID -- VGS 8 2.5V 4 10.0V .0V 5 Drain Current, ID -- A S 1 VGS=1.0V C 25 0 0 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 100 0.2 IT03512 1.8 2.0 IT03513 RDS(on) -- Ta 100 90 Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C 80 70 60 50 ID=1.5A 3.0A 40 30 20 10 0 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 10 90 80 70 60 =2.5V A, V GS .5 1 = ID =4.0V A, V GS I D=3.0 50 40 30 20 10 0 --60 IT03514 Rev.0 I Page 2 of 4 I www.onsemi.com --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- C 120 140 160 IT03515 CPH6413 10 25 = -- C Ta 25 5 C C 75 3 2 2 3 5 7 2 1.0 3 5 10 IT03516 SW Time -- ID 1000 7 5 3 2 0.1 7 5 0.3 0.4 0.6 0.7 0.8 0.9 1.0 1.1 3 2 1.2 IT03517 Ciss, Coss, Crss -- VDS 10000 7 5 VDD=10V VGS=4V 0.5 Diode Forward Voltage, VSD -- V f=1MHz 3 2 100 7 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 1.0 7 5 0.01 0.2 7 Drain Current, ID -- A td(off) tf 3 2 td(on) 10 7 5 tr 3 2 1000 7 5 Ciss 3 2 Coss 100 7 5 Crss 3 2 1.0 0.1 10 2 3 5 7 2 1.0 3 5 7 0 10 IT03518 Drain Current, ID -- A 3 2 Drain Current, ID -- A 3.0 2.5 2.0 1.5 1.0 10 7 5 0 1 2 3 4 5 6 7 Total Gate Charge, Qg -- nC 1.6 1.5 8 3 2 0.1 7 5 0.01 0.01 2 bo 20 0m m2 0 .8m m) 0 40 60 80 100 120 140 ms 10 0m op s Ta=25C Single pulse Mounted on a ceramic board(1200mm20.8mm) IT03520 Ambient Temperature, Ta -- C <10s 10 1m 0s s Operation in this area is limited by RDS(on). (1 20 20 IT03519 n ram 0 18 tio ce 0.5 16 era 1.0 7 5 do ard 14 10 DC nte ic 12 ID=5A ou 1.0 10 IDP=20A M na 8 ASO PD -- Ta 2.0 6 3 2 3 2 0.5 0 4 5 VDS=10V ID=5A 3.5 2 Drain-to-Source Voltage, VDS -- V VGS -- Qg 4.0 Gate-to-Source Voltage, VGS -- V 3 2 3 2 1.0 0.1 Allowable Power Dissipation, PD -- W VGS=0 Ta= 75 C 25 C Forward Current, IF -- A Forward Transfer Admittance, yfs -- S VDS=10V 2 7 IF -- VSD 10 7 5 --25 C yfs -- ID 3 160 IT03624 Rev.0 I Page 3 of 4 I www.onsemi.com 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT03623 CPH6413 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. SCILLC strives to supply high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or malfunctions. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer's technical experts. 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