Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 1.4
RθCS Case-to-Sink, flat, greased surface ––– 0.50 ––– °C/W
RθJA Junction-to-Ambient, typical socket mount––– ––– 62
RθJA Junction-to-Ambient (PCB Mount, steady state)––– ––– 40
Wt Weight ––– 1.44 ––– g
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 13 A
IC @ TC = 100°C Continuous Collector Current 7.0
ICM Pulsed Collector Current 26
ILM Clamped Inductive Load Current 26
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 90 W
PD @ TC = 100°C Maximum Power Dissipation 36
TJOperating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
INSULATED GATE BIPOLAR TRANSISTOR
Features
11/18/04
Absolute Maximum Ratings
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free.
Benefits
www.irf.com 1
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Thermal Resistance
IRGB6B60KPbF
IRGS6B60KPbF
IRGSL6B60KPbF
VCES = 600V
IC = 7.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
PD - 95644A
E
C
G
n-channel
D2Pak
IRGS6B60K
TO-220AB
IRGB6B60K TO-262
IRGSL6B60K
IRGB/S/SL6B60KPbF
2www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Ref.Fig.
5, 6,7
8,9,10
8,9,10
11
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 60 0 –– – ––– V V GE = 0V, IC = 500µA
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)
VCE(on) Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 V IC = 5.0A, VGE = 15V
––– 2.20 2.50 IC = 5.0A,VGE = 15V, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.5 4.5 5 .5 V VCE = VGE, IC = 250µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = V GE, I C = 1.0mA, (25°C-150°C)
gfe Forward Transconductance ––– 3.0 ––– S VCE = 50V, I C = 5.0A, PW=80µs
ICES Zero Gate Voltage Collector Current ––– 1.0 150 µA VGE = 0V, VCE = 600V
––– 200 500 VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ––– – –– ±100 nA V GE = ±20V
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) –– – 18.2 ––– IC = 5.0A
Qge Gate - Emitter Charge (turn-on) ––– 1.9 ––– nC VCC = 400V
Qgc Gate - Collector Charge (turn-on) ––– 9.2 ––– VGE = 15V
Eon Turn-On Switching Loss ––– 110 210 µJ IC = 5.0A, VCC = 400V
Eoff Turn-Off Switching Loss ––– 135 245 VGE = 15V,RG = 100Ω, L =1.4mH
Etot Total Switching Loss ––– 245 455 Ls = 150nH TJ = 25°C
td(on) Turn-On Delay Time ––– 25 34 IC = 5.0A, VCC = 400V
trRise Time ––– 17 26 VGE = 15V, RG = 100Ω L =1.4mH
td(off) Turn-Off Delay Time – –– 215 230 ns Ls = 150nH, T J = 25°C
tfFall Time ––– 13.2 22
Eon Turn-On Switching Loss – – – 150 260 IC = 5.0A, VCC = 400V
Eoff Turn-Off Switching Loss ––– 190 300 µJ VGE = 15V,RG = 100Ω, L =1.4mH
Etot Total Switching Loss ––– 340 560 Ls = 150nH TJ = 150°C
td(on) Turn-On Delay Time ––– 28 37 IC = 5.0A, VCC = 400V
trRise Time ––– 17 26 VGE = 15V, RG = 100Ω L =1.4mH
td(off) Turn-Off Delay Time – –– 240 255 ns Ls = 150nH, T J = 150°C
tfFall Time ––– 18 27
Cies Input Capacitance ––– 290 ––– VGE = 0V
Coes Output Capacitance ––– 34 – –– pF VCC = 30V
Cres Reverse Transfer Capacitance ––– 10 ––– f = 1.0MHz
TJ = 150°C, IC = 26A, Vp =600V
VCC = 500V, VGE =+15V to 0V,
µs TJ = 150°C, Vp =600V, RG = 100Ω
VCC = 360V, VGE = +15V to 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
RBSOA Reverse Bias Safe Operting Area FULL SQUARE
SCSOA Short Circuit Safe Operting Area 10 ––– –––
Ref.Fig.
17
CT1
CT4
CT4
12,14
WF1WF2
4
CT2
CT3
WF3
CT4
RG = 100Ω
13, 15
CT4
WF1
WF2
Note to are on page 13
16
IRGB/S/SL60B60KPbF
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Fig. 1 - Maximum DC Collector Current vs.
Case Temperature Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
0 20 40 60 80 100 120 140 160
TC (°C)
0
5
10
15
IC (A)
0 20 40 60 80 100 120 140 160
TC (°C)
0
10
20
30
40
50
60
70
80
90
100
Ptot (W)
1 10 100 1000 10000
VCE (V)
0.1
1
10
100
IC (A)
10 µs
100 µs
1ms
DC
10 100 1000
VCE (V)
0
1
10
100
IC A)
IRGB/S/SL6B60KPbF
4www.irf.com
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
0123456
VCE (V)
0
2
4
6
8
10
12
14
16
18
20
ICE (A)
VGE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
0123456
VCE (V)
0
2
4
6
8
10
12
14
16
18
20
ICE (A)
VGE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
0123456
VCE (V)
0
2
4
6
8
10
12
14
16
18
20
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
IRGB/S/SL60B60KPbF
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Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
Fig. 8 - Typical VCE vs. VGE
TJ = -40°C
Fig. 10 - Typical VCE vs. VGE
TJ = 150°C Fig. 11 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 3.0A
ICE = 5.0A
ICE = 10A
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 3.0A
ICE = 5.0A
ICE = 10A
0 5 10 15 20
VGE (V)
0
5
10
15
20
25
30
35
40
ICE (A)
TJ = 25°C
TJ = 150°C
TJ = 150°C
TJ = 25°C
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 3. 0A
ICE = 5.0A
ICE = 10A
IRGB/S/SL6B60KPbF
6www.irf.com
Fig. 13 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.4mH; VCE= 400V
RG= 100Ω; VGE= 15V
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 150°C; L=1.4mH; VCE= 400V
RG= 100Ω; VGE= 15V
Fig. 15 - Typ. Switching Time vs. RG
TJ = 150°C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 150°C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V
050 100 150 200
RG (Ω)
0
50
100
150
200
250
Energy (µJ)
EON
EOFF
0 5 10 15 20
IC (A)
0
100
200
300
400
500
600
700
Energy (µJ)
EOFF
EON
0 5 10 15 20
IC (A)
1
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
050 100 150 200
RG (Ω)
1
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
IRGB/S/SL60B60KPbF
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Fig. 17 - Typical Gate Charge vs. VGE
ICE = 5.0A; L = 600µH
Fig. 16 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
110 100
VCE (V)
1
10
100
1000
Capacitance (pF)
Cies
Coes
Cres
0 5 10 15 20
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE (V)
300V
400V
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1
t1 , Rectangular Pulse Dur ation (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Z thjc + T c
Ri (°C/W) τi (sec)
0.708 0.00022
0.447 0.00089
0.219 0.01037
τJ
τJ
τ1
τ1τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τ
C
Ci= i/Ri
Ci= τi/Ri
IRGB/S/SL6B60KPbF
8www.irf.com
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
1K
VCC
DUT
0
L
Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
L
Rg
VCC
diode clamp /
DUT
DUT /
DRIVER
- 5V
Rg
VCC
DUT
R =
V
CC
I
CM
L
Rg
80 V DUT
480V
+
-
DC
Driver
DUT
360V
IRGB/S/SL60B60KPbF
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-50
0
50
100
150
200
250
300
350
400
450
-0.20 0.30 0.80
time(µs)
V
CE
(V)
-1
0
1
2
3
4
5
6
7
8
9
I
CE
(A)
90% ICE
5% VCE
5% ICE
Eoff Loss
tf
-100
0
100
200
300
400
500
16.00 16.10 16.20 16.30 16.40
time (µs)
V
CE
(V)
-5
0
5
10
15
20
25
I
CE
(A)
TEST CURRENT
90% test current
5% V
CE
10% test curre nt
tr
E o n Lo s s
0
100
200
300
400
500
-5.00 0.00 5.00 10.00 15.00
time (µS)
V
CE
(V)
0
10
20
30
40
50
I
CE
(A)
V
CE
I
CE
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4 Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF3- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
IRGB/S/SL6B60KPbF
10 www.irf.com
TO-220AB Part Marking Information
EXAMPLE:
IN THE ASSEMBLY LINE "C"
THIS IS AN IRF1010
LOT CODE 1789
ASSEMBLED ON WW 19, 19 97 PAR T NUMBE
ASSEMBLY
LOT CODE
DATE CODE
YEAR 7 = 1997
LINE C
WEEK 19
LOGO
RECTIFIER
INTERNATIONAL
Note: "P" in as s em bly line
position indicates "Lead-Free"
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
IRGB/S/SL60B60KPbF
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D2Pak Part Marking Information
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
Note: "P" in ass embly li ne
position indicates "Lead-Free"
F530S
TH IS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED O N WW 02, 2000
IN THE ASSEMBLY LIN E "L "
AS S EMB LY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PAR T NUMBER
DATE CODE
YEAR 0 = 2000
WEE K 02
LINE L
OR
F530S
A = ASSE MB LY SITE CODE
WEEK 02
P = DESIGNATES LEAD-FRE E
PRODUCT (OPTIONAL)
RECTIFIER
INTERNATIONAL
LOGO
LOT CODE
ASSEMBLY YEAR 0 = 2000
DAT E CODE
PART NUM BER
IRGB/S/SL6B60KPbF
12 www.irf.com
TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
ASSEMBLY
LOT CODE
RECTIFIER
INTERNATIONAL
ASSEMBLED ON WW 19, 1997
Note: "P" in assembly lin e
po si ti o n i nd i cates "Lead- Fr ee"
IN THE ASSEMBLY LINE "C" LOGO
THIS IS AN IR L3103L
LOT CODE 1789
EXAMPLE:
LINE C
DATE CODE
WEEK 19
YEAR 7 = 1997
PAR T NUMB ER
PART NUMB ER
LOGO
LOT CODE
ASSEMBLY
INTERNATIONAL
RECTIFIER
PRODU CT (OPT IONAL)
P = D E S IGNAT ES LEAD- F REE
A = ASSEMBLY SITE CODE
WE EK 19
YEAR 7 = 1997
DATE CODE
OR
IRGB/S/SL60B60KPbF
www.irf.com 13
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/04
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
Notes:
VCC= 80% (VCES), VGE =15V, L = 28µH, RG = 22Ω
This is only applied to TO-220AB package
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery, using Diode HF03D060ACE.
TO-220 package is not recommended for Surface Mount Application
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
F
EED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
F
EED DIRECTION
10.90 (.429)
10.70 (.421) 16. 10 (. 634)
15. 90 (. 626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957
)
23.90 (.941
)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362
)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOT E S :
1. COMF O RMS TO E IA- 418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/