TLD8S40AH - TAIWAN SEMICONDUCTOR MANUFACTURING

TLD8S10AH – TLD8S43AH

Taiwan Semiconductor

1 Version: C1906

6600W, 10V – 43V Surface Mount Transient Voltage Suppressor

FEATURES

● AEC-Q101 qualified

● Junction passivation optimized design technology

● TJ =175 °C capability suitable for high reliability and automotive

requirement

● Moisture sensitivity level: level 1, per J-STD-020

● Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

● Meets ISO7637-2 and ISO16750-2 surge specifications

(varied by test conditions)

● Meets IEC 61000-4-2 (Level: 4) / ISO 10605 (Level: L4)

APPLICATIONS

● Transient Surge Protection.

● Automotive Load Dump Surge Protection.

MECHANICAL DATA

● Case: DO-218AB

● Molding compound meets UL 94V-0 flammability rating

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 2 whisker test

● Polarity: Uni-directional

● Weight: 2.691g (approximately)

KEY PARAMETERS

PARAMETER VALUE UNIT

VWM 10 – 43 V

VBR 11.1 – 52.8

V

PPPM

(10x1,000μs)

6600 W

PPPM

(10x10,000μs)

5200 W

TJ MAX 175 °C

Package DO-218AB

DO-218AB

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise noted)

PARAMETER SYMBOL VALUE UNIT

Non-repetitive peak impulse power dissipation with

10/1000μs waveform PPPM 6600 W

Non-repetitive peak impulse power dissipation with

10/10000μs waveform (1) PPPM 5200 W

Steady state power dissipation (Fig.1) PD 8 W

Forward Voltage at IF=100 A (2) VF, MAX 1.8 V

Peak forward surge current, 8.3 ms single half sine-wave IFSM 700 A

Junction temperature TJ -55 to +175 °C

Storage temperature TSTG -55 to +175 °C

Notes:

1. Non-repetitive current pulse per Fig. 3.

2. Pulse test with PW=0.3 ms

TLD8S10AH – TLD8S43AH

Taiwan Semiconductor

2 Version: C1906

THERMAL PERFORMANCE

PARAMETER SYMBOL TYP UNIT

Junction-to-case thermal resistance per diode RӨJC 0.8 °C/W

Thermal Performance Note: With ideal heatsink

ELECTRICAL SPECIFICATIONS

(TA = 25°C unless otherwise noted)

Part

number

Marking

code

Breakdown

voltage

VBR at IT

(V)

(Note 1)

Test

current

IT

(mA)

Working

stand-

off

voltage

VWM

(V)

Maximum

blocking

leakage

current

IR at VWM

(µA)

(Note 1)

Maximum

blocking

leakage

current

IR at VWM

TJ =175°C

(µA)

(Note 1)

Maximum

peak

impulse

current

IPPM

(A)

tp

=10/1000

(μs)

Maximum

clamping

voltage

VC at IPPM

(V)

Typical

temp.

coefficient

of VBR

αT

(%/°C)

(Note 2)

Min.

Max.

TLD8S10AH

TLD8S10A

11.1

12.3

5.0 10.0 15 250 388 17.0 0.069

TLD8S11AH

TLD8S11A

12.2

13.5

5.0 11.0 10 150 363 18.2 0.072

TLD8S12AH

TLD8S12A

13.3

14.7

5.0 12.0 10 150 332 19.9 0.074

TLD8S13AH

TLD8S13A

14.4

15.9

5.0 13.0 10 150 307 21.5 0.076

TLD8S14AH

TLD8S14A

15.6

17.2

5.0 14.0 10 150 284 23.2 0.078

TLD8S15AH

TLD8S15A

16.7

18.5

5.0 15.0 10 150 270 24.4 0.080

TLD8S16AH

TLD8S16A

17.8

19.7

5.0 16.0 10 150 254 26.0 0.081

TLD8S17AH

TLD8S17A

18.9

20.9

5.0 17.0 10 150 239 27.6 0.082

TLD8S18AH

TLD8S18A

20.0

22.1

5.0 18.0 10 150 226 29.2 0.083

TLD8S20AH

TLD8S20A

22.2

24.5

5.0 20.0 10 150 204 32.4 0.085

TLD8S22AH

TLD8S22A

24.4

26.9

5.0 22.0 10 150 186 35.5 0.086

TLD8S24AH

TLD8S24A

26.7

29.5

5.0 24.0 10 150 170 38.9 0.087

TLD8S26AH

TLD8S26A

28.9

31.9

5.0 26.0 10 150 157 42.1 0.088

TLD8S28AH

TLD8S28A

31.1

34.4

5.0 28.0 10 150 145 45.4 0.089

TLD8S30AH

TLD8S30A

33.3

36.8

5.0 30.0 10 150 136 48.4 0.090

TLD8S33AH

TLD8S33A

36.7

40.6

5.0 33.0 10 150 124 53.3 0.091

TLD8S36AH

TLD8S36A

40.0

44.2

5.0 36.0 10 150 114 58.1 0.091

TLD8S40AH

TLD8S40A

44.4

49.1

5.0 40.0 10 150 102 64.5 0.092

TLD8S43AH

TLD8S43A

47.8

52.8

5.0 43.0 10 150 95.1 69.4 0.093

Note:

1. Pulse test with PW=30 ms

2. To calculate VBR vs. junction temperature, use the following formula:

VBR at TJ = VBR at 25 °C x (1 + T x (TJ - 25))

ORDERING INFORMATION

ORDERING CODE

(Note)

PACKAGE PACKING

TLD8SxxAH MAG DO-218AB 750 / 13” Plastic reel

Note: "xx" defines voltage from 10V (TLD8S10AH) to 43V (TLD8S43AH)

TLD8S10AH – TLD8S43AH

Taiwan Semiconductor

3 Version: C1906

CHARACTERISTICS CURVES

(TA = 25°C unless otherwise noted)

Fig.1 Power Derating Curve

Fig.2 Load Dump Power Characteristics

(10ms Exponential Waveform)

Fig.3 Clamping Power Pulse Waveform

Fig.4 Reverse Power Capability

Fig.5 Typical Transient Thermal Impedance

Fig.6 Typical Junction Capacitance

0

1

2

3

4

5

6

7

8

9

10

0 25 50 75 100 125 150 175

0

1000

2000

3000

4000

5000

6000

25 50 75 100 125 150 175

0

50

100

150

0 5 10 15 20 25 30 35 40

INPUT PEAK PULSE CURRENT (%)

t - TIME (ms)

td

Peak value

I

PPM

tr=10μs

Half value -

IPPM/2

Pulse width (td) is defined

as the point where the peak

current decays to 50% of IPPM

1000

10000

10 100

0.01

0.1

1

10

100

0.01 0.1 1 10 100

RθJC

RθJA

100

1000

10000

100000

10 15 20 25 30 35 40 45

Measured at Zero Bias

Measured at Stand-Off

Voltage VWM

f = 1MHz

Vsig = 50mVP-P

LOAD DUMP POWER (W)

REVERSE SURGE POWER (W)

PULSE WIDTH (ms)

POWER DISSIPATION (W)

CASE TEMPERATURE (°C)

PULSE DURATION (s)

TRANSIENT THERMAL IMPEDANCE (°C/W)

JUNCTION CAPACITANCE (pF)

STAND-OFF VOLTAGE, VWM(V)

TLD8S10AH – TLD8S43AH

Taiwan Semiconductor

4 Version: C1906

PACKAGE OUTLINE DIMENSIONS

DO-218AB

SUGGESTED PAD LAYOUT

MARKING DIAGRAM

P/N = Marking Code

YWW = Date Code

F = Factory Code

TLD8S10AH – TLD8S43AH

Taiwan Semiconductor

5 Version: C1906

Notice

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assumes no responsibility or liability for any errors or inaccuracies.

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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

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