TLD8S10AH - TLD8S43AH Taiwan Semiconductor 6600W, 10V - 43V Surface Mount Transient Voltage Suppressor FEATURES KEY PARAMETERS AEC-Q101 qualified Junction passivation optimized design technology TJ =175 C capability suitable for high reliability and automotive requirement Moisture sensitivity level: level 1, per J-STD-020 Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 Meets ISO7637-2 and ISO16750-2 surge specifications (varied by test conditions) Meets IEC 61000-4-2 (Level: 4) / ISO 10605 (Level: L4) PARAMETER VALUE UNIT VWM 10 - 43 V VBR PPPM 11.1 - 52.8 V 6600 W 5200 W 175 C (10x1,000s) PPPM (10x10,000s) TJ MAX Package DO-218AB APPLICATIONS Transient Surge Protection. Automotive Load Dump Surge Protection. MECHANICAL DATA Case: DO-218AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Uni-directional Weight: 2.691g (approximately) DO-218AB ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) PARAMETER Non-repetitive peak impulse power dissipation with 10/1000s waveform Non-repetitive peak impulse power dissipation with (1) 10/10000s waveform (Fig.1) Steady state power dissipation Forward Voltage at IF=100 A (2) Peak forward surge current, 8.3 ms single half sine-wave Junction temperature Storage temperature Notes: 1. Non-repetitive current pulse per Fig. 3. 2. Pulse test with PW=0.3 ms 1 SYMBOL VALUE UNIT PPPM 6600 W PPPM 5200 W PD 8 W VF, MAX 1.8 V IFSM 700 A TJ -55 to +175 C TSTG -55 to +175 C Version: C1906 TLD8S10AH - TLD8S43AH Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RJC 0.8 C/W Junction-to-case thermal resistance per diode Thermal Performance Note: With ideal heatsink ELECTRICAL SPECIFICATIONS (TA = 25C unless otherwise noted) Part number Marking code Maximum Breakdown Working blocking voltage Test stand-off leakage VBR at IT current current voltage (V) IT VWM (Note 1) IR at VWM (mA) (V) (A) (Note 1) Min. Max. Maximum blocking leakage current IR at VWM TJ =175C (A) (Note 1) Maximum peak Typical impulse Maximum temp. current clamping coefficient voltage of VBR IPPM (A) VC at IPPM T tp (V) (%/C) =10/1000 (Note 2) (s) TLD8S10AH TLD8S10A 11.1 12.3 5.0 10.0 15 250 388 17.0 0.069 TLD8S11AH TLD8S11A 12.2 13.5 5.0 11.0 10 150 363 18.2 0.072 TLD8S12AH TLD8S12A 13.3 14.7 5.0 12.0 10 150 332 19.9 0.074 TLD8S13AH TLD8S13A 14.4 15.9 5.0 13.0 10 150 307 21.5 0.076 TLD8S14AH TLD8S14A 15.6 17.2 5.0 14.0 10 150 284 23.2 0.078 TLD8S15AH TLD8S15A 16.7 18.5 5.0 15.0 10 150 270 24.4 0.080 TLD8S16AH TLD8S16A 17.8 19.7 5.0 16.0 10 150 254 26.0 0.081 TLD8S17AH TLD8S17A 18.9 20.9 5.0 17.0 10 150 239 27.6 0.082 TLD8S18AH TLD8S18A 20.0 22.1 5.0 18.0 10 150 226 29.2 0.083 TLD8S20AH TLD8S20A 22.2 24.5 5.0 20.0 10 150 204 32.4 0.085 TLD8S22AH TLD8S22A 24.4 26.9 5.0 22.0 10 150 186 35.5 0.086 TLD8S24AH TLD8S24A 26.7 29.5 5.0 24.0 10 150 170 38.9 0.087 TLD8S26AH TLD8S26A 28.9 31.9 5.0 26.0 10 150 157 42.1 0.088 TLD8S28AH TLD8S28A 31.1 34.4 5.0 28.0 10 150 145 45.4 0.089 TLD8S30AH TLD8S30A 33.3 36.8 5.0 30.0 10 150 136 48.4 0.090 TLD8S33AH TLD8S33A 36.7 40.6 5.0 33.0 10 150 124 53.3 0.091 TLD8S36AH TLD8S36A 40.0 44.2 5.0 36.0 10 150 114 58.1 0.091 TLD8S40AH TLD8S40A 44.4 49.1 5.0 40.0 10 150 102 64.5 0.092 TLD8S43AH TLD8S43A 47.8 52.8 5.0 43.0 10 150 95.1 69.4 0.093 Note: 1. Pulse test with PW=30 ms 2. To calculate VBR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 C x (1 + T x (TJ - 25)) ORDERING INFORMATION ORDERING CODE (Note) TLD8SxxAH MAG PACKAGE PACKING DO-218AB 750 / 13" Plastic reel Note: "xx" defines voltage from 10V (TLD8S10AH) to 43V (TLD8S43AH) 2 Version: C1906 TLD8S10AH - TLD8S43AH Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig.1 Power Derating Curve Fig.2 Load Dump Power Characteristics (10ms Exponential Waveform) 10 6000 9 5000 LOAD DUMP POWER (W) POWER DISSIPATION (W) 8 7 6 5 4 3 2 4000 3000 2000 1000 1 0 0 0 25 50 75 100 125 150 25 175 50 75 100 125 150 175 CASE TEMPERATURE (C) CASE TEMPERATURE (C) Fig.3 Clamping Power Pulse Waveform Fig.4 Reverse Power Capability 10000 150 Peak value IPPM 100 Pulse width (td) is defined as the point where the peak current decays to 50% of IPPM REVERSE SURGE POWER (W) INPUT PEAK PULSE CURRENT (%) tr=10s Half value IPPM/2 50 td 0 0 5 10 15 20 25 30 35 1000 40 10 100 t - TIME (ms) PULSE WIDTH (ms) Fig.5 Typical Transient Thermal Impedance Fig.6 Typical Junction Capacitance 100000 f = 1MHz Vsig = 50mVP-P RJA JUNCTION CAPACITANCE (pF) TRANSIENT THERMAL IMPEDANCE (C/W) 100 10 1 RJC 0.1 0.01 0.01 0.1 1 10 Measured at Zero Bias 10000 1000 Measured at Stand-Off Voltage VWM 100 100 10 15 20 25 30 35 40 45 STAND-OFF VOLTAGE, VWM(V) PULSE DURATION (s) 3 Version: C1906 TLD8S10AH - TLD8S43AH Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-218AB SUGGESTED PAD LAYOUT MARKING DIAGRAM 4 P/N = Marking Code YWW = Date Code F = Factory Code Version: C1906 TLD8S10AH - TLD8S43AH Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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