Data
sheet
www.bookham.com Thinking RF solutions
HEMT MMIC Driver
Amplifier, 25-30GHz
The P35-5126-000-200 is a high performance 25-30GHz
Gallium Arsenide driver amplifier. This product is intended
for use in fixed-point microwave systems and satellite
communications.
The die is fabricated using Bookham Technology's 0.20µm
gate length, pHEMT process and is fully protected using
Silicon Nitride passivation for excellent performance and
reliability.
Features
•Over 22dBm Output Power
@ 28GHz
•10dB Gain from 25 to 30GHz
•Small Die Size (2 x 1mm)
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Parameter Conditions Min Typ Max Units
Small Signal Gain 25 – 30GHz - 10 - dB
Gain slope 25 – 30GHz - ± 0.5 - dB
Input Return Loss 25 – 30GHz - 10 - dB
Output Return Loss 25 – 30GHz - 10 - dB
Output power at 1dB
gain compression 28GHz, Vdd 5V - 22 - dBm
First Stage Current By Adjustment of Vg1 - 50 - mA
Second Stage Current By Adjustment of Vg2 - 90 - mA
Thermal Resistance - - 130 - °C/W
Electrical Performance
Ambient Temperature 22±3º C, Zo = 50Ω, Vdd = 4V, Vg1 set for Id1=50mA, Vg2 set for Id2=90mA Unless otherwise stated
Typical RFOW Performance (----- With Bondwires)
0
5
10
15
20
25
20 22 24 26 28 30 32
Frequency (GHz)
Return Loss (dB)
P35-5126-000-200
0
5
10
15
20
25
20 22 24 26 28 30 32
Frequency (GHz)
Return Loss (dB)
0
2
4
6
8
10
12
14
20 22 24 26 28 30 32
Frequency (GHz)
Gain (dB)
0
20
40
60
20 22 24 26 28 30 32
Frequency (GHz)
Reverse Isolation (dB)
Notes
1. All parameters measured on wafer
Gain Reverse Isolation
Input Return Loss Output Return Loss
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P35-5126-000-200
Typical RFOW Performance
18
19
20
21
22
23
24
24 25 26 27 28 29 30
Frequency (GHz)
Pout (dBm)
4V
4.5V
5V
15
17
19
21
23
0 2 4 6 8 10121416
Pin (dBm)
Pout (dBm)
26GHz
28GHz
30GHz
Gain vs Pin (4V)
0
2
4
6
8
10
12
14
-10 -5 0 10 15
Pin (dBm)
Gain (dB)
26GHz
28GHz
30GHz
5
100
125
150
175
02 4 6 810121416
Pin (dBm)
Current Ids (mA)
26GHz
28GHz
30GHz
0
5
10
15
20
0246 810121416
Pin (dBm)
PAE (%)
26GHz
28GHz
30GHz
15
17
19
21
23
0 2 4 6 8 10121416
Pin (dBm)
Pout (dBm)
26GHz
28GHz
30GHz
Output Power @ 1dB Compression Pout vs Pin (4V)
Gain vs Pin (4v) Current vs Pin (4V)
PAE vs Pin (4v) Pout vs Pin (5V)
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P35-5126-000-200
Gain vs Pin (5V)
0
2
4
6
8
10
12
14
-10 -5 0 10 15
Pin (dBm)
Gain (dB)
26GHz
28GHz
30GHz
5100
125
150
175
200
0246 810121416
Pin (dBm)
Current Ids (mA)
26GHz
28GHz
30GHz
Gain vs Pin (5v)
15
17
19
21
23
Pin (dBm)
Pout (dBm)
26GHz
28GHz
30GHz
02 46 108121416
PAE vs Pin (5v)
Current vs Pin (5v)
Thinking RF solutionswww.bookham.com
P35-5126-000-200
Frequency S11 S21 S12 S22
(GHz) Mag Angle Mag Angle Mag Angle Mag Angle
20.00 0.66 -49.9 2.78 162.6 0.003 76.5 0.13 -144.1
20.25 0.67 -53.3 2.87 151.5 0.003 71.8 0.14 -142.9
20.50 0.67 -56.9 2.95 140.8 0.003 67.1 0.15 -142.4
20.75 0.67 -60.5 3.02 130.3 0.003 53.2 0.15 -142.0
21.00 0.67 -64.5 3.09 119.9 0.003 48.3 0.16 -142.3
21.25 0.67 -68.6 3.14 109.7 0.003 41.1 0.17 -143.4
21.50 0.67 -72.6 3.17 99.8 0.003 30.4 0.18 -145.4
21.75 0.66 -76.6 3.21 90.2 0.003 29.1 0.19 -147.1
22.00 0.65 -80.7 3.25 80.7 0.004 20.7 0.19 -149.1
22.25 0.64 -84.8 3.28 71.2 0.003 14.7 0.20 -151.4
22.50 0.62 -88.7 3.31 61.8 0.003 6.8 0.20 -154.0
22.75 0.60 -92.8 3.33 52.4 0.003 -4.2 0.21 -156.5
23.00 0.58 -96.2 3.34 43.1 0.003 -12.2 0.21 -159.1
23.25 0.56 -99.8 3.36 33.9 0.003 -5.1 0.22 -161.6
23.50 0.54 -103.2 3.36 24.7 0.003 -18.2 0.22 -164.6
23.75 0.52 -106.4 3.37 15.6 0.003 -19.6 0.22 -167.1
24.00 0.49 -109.5 3.36 6.5 0.003 -30.2 0.22 -170.0
24.25 0.47 -112.4 3.35 -2.3 0.003 -37.5 0.22 -172.7
24.50 0.45 -114.9 3.34 -11.0 0.003 -45.2 0.22 -175.2
24.75 0.42 -117.6 3.33 -19.7 0.003 -47.9 0.22 -178.0
25.00 0.40 -119.9 3.32 -28.3 0.002 -47.7 0.22 179.2
25.25 0.37 -122.3 3.32 -37.0 0.003 -54.0 0.22 176.2
25.50 0.35 -124.3 3.31 -45.5 0.003 -73.0 0.22 173.3
25.75 0.32 -125.7 3.31 -54.0 0.003 -84.0 0.22 170.8
26.00 0.30 -127.1 3.32 -62.4 0.003 -87.6 0.22 168.3
26.25 0.28 -128.3 3.32 -70.8 0.003 -92.2 0.22 166.0
26.50 0.25 -129.2 3.34 -79.5 0.003 -104.2 0.22 163.2
26.75 0.23 -129.6 3.35 -88.2 0.004 -111.7 0.22 160.5
27.00 0.21 -129.7 3.38 -96.9 0.004 -123.0 0.21 158.1
27.25 0.19 -129.4 3.41 -105.6 0.004 -143.7 0.21 156.5
27.50 0.16 -128.4 3.45 -114.6 0.004 -151.9 0.21 154.6
27.75 0.13 -125.8 3.51 -123.9 0.004 -163.3 0.22 152.5
28.00 0.11 -119.5 3.57 -133.5 0.004 -172.5 0.22 149.8
28.25 0.08 -105.6 3.62 -143.4 0.004 -166.1 0.23 147.1
28.50 0.07 -79.5 3.69 -153.6 0.004 -177.9 0.23 144.9
28.75 0.09 -52.8 3.75 -164.5 0.005 172.6 0.24 141.6
29.00 0.12 -36.7 3.81 -175.9 0.004 153.8 0.25 137.2
29.25 0.16 -29.1 3.86 172.3 0.004 157.1 0.26 133.2
29.50 0.21 -27.2 3.89 159.8 0.005 151.4 0.27 129.4
29.75 0.27 -27.6 3.88 146.4 0.005 138.1 0.28 124.8
30.00 0.33 -30.6 3.82 132.4 0.005 121.4 0.29 119.9
30.25 0.40 -34.8 3.70 117.9 0.006 110.7 0.30 114.0
30.50 0.46 -40.0 3.51 103.2 0.006 103.9 0.32 107.5
30.75 0.52 -46.0 3.24 88.5 0.007 82.5 0.33 99.9
31.00 0.57 -52.2 2.94 74.5 0.006 74.7 0.33 92.9
31.25 0.61 -58.1 2.63 61.3 0.006 65.1 0.33 86.2
31.50 0.65 -63.6 2.33 48.9 0.005 52.4 0.33 80.0
31.75 0.67 -68.6 2.05 37.1 0.005 52.5 0.33 73.4
32.00 0.70 -73.3 1.79 26.1 0.004 39.2 0.32 67.8
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P35-5126-000-200
Pad Details
Die size: 2.05 x 1.14mm
RF bond pads (1 & 2): 80µm x 120µm
All other bond pads: 120µm x 120µm
Die Thickness: 100µm
Pad Function
1 RF Input
2 RF Output
3 Gnd
4 Vd2
5 N/C
6 Vg2
7 Vd1
8 N/C
9 Vg1
10 Gnd
Chip Outline
Handling and Assembly Information
Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Dice are supplied in
antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static
workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp
tweezers.
GaAs Products from Bookham Technology’s H40P Foundry process are 100µm thick and have through GaAs vias to
enable grounding to the circuit. Windows in the surface passivation above the bond pads are provided to allow wire
bonding to the die.
The surface to which the die are to be attached should be cleaned with a proprietary de-greasing leaner.
Eutectic mounting should be used and entails the use of a gold-tin (AuSn) preform, approximately 0.001” thick, placed
between the die and the attachment surface. The preferred method of mounting is the use of a machine such as a
Mullins 8-140 die bonder. This utilises a heated collet and workstation with a facility for applying a scrubbing action to
ensure total wetting and avoid the formation of voids. Dry nitrogen gas is directed across the work piece.
The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280ºC (Note: Gold Germanium with a
higher melting temperature should be avoided, in particular for MMICs). The work station temperature should be
310ºC ± 10ºC. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. The strength of
the bonding formed by this method will result in fracture of the die, rather than the bond under die strength testing.
The P35-5126-000-200 amplifier die has gold bond pads. The recommended wire bonding procedure uses 25µm
(0.001") 99.99% pure gold wire with 0.5-2% elongation. Thermo-compression wedge bonding is preferred though
thermosonic wire bonding may be used providing the ultrasonic content of the bond is minimised. A work station
temperature of 260ºC ± 10ºC with a wedge tip temperature of 120ºC ± 10ºC is recommended. The wedge force
should be 45 ± 5 grams. Bonds should be made from the bond pads on the die to the package or substrate.
The RF bond pads at the input and output are 80µm x 120µm; all other bond pads are 120µm x 120µm.
The P35-5126-000-200 has been designed to include the inductance of a single 0.2mm length of 25µm bond wire at
both the input and output, facilitating the integration of the die into a 50Ωenvironment.
Operating and Biasing of the P35-5126-000-200
The P35-5126-000-200 is a two-stage amplifier. The drain bias for both stages (Vd1 & Vd2) should be set to 4.0
volts. The gate voltages (Vg1 & Vg2) are typically set to -0.3V(50% Idss) to give an Id1 of 50mA and Id2 of 90mA.
The separate drain and gate voltage supplies for both stages can be combined into single supplies (Vdd & Vgg). DC
bias supplies should be decoupled to ground using 100pF chip capacitors placed close to the chip with short
bondwires to the amplifier bond pads.
Typical bonding detail
Absolute maximum Ratings
Max Vdd +7V
Max Vgg -2V
Max channel temperature 150ºC
Storage temperature -65ºC to +150ºC
Ordering Information
P35-5126-000-200
www.bookham.com 462/SM/02348/200 Issue 2
© Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc
MMICS
Bookham Technology plc
Caswell
Towcester
Northamptonshire
NN12 8EQ
UK
• Tel: +44 (0) 1327 356 789
• Fax: +44 (0) 1327 356 698
rfsales@bookham.com
Important Notice
Bookham Technology has a policy of
continuous improvement. As a result
certain parameters detailed on this flyer
may be subject to change without notice.
If you are interested in a particular product
please request the product specification
sheet, available from any RF sales
representative.
P35-5126-000-200
