BFR520,215 - NXP - Product.Network

1. Product profile

1.1 General description

The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.

1.2 Features and benefits

High power gain

Low noise figure

High transition frequency

Gold metallization ensures excellent reliability.

1.3 Applications

RF front end wideband applications in the GHz range

Analog and digital cellular telephones

Cordless telephones (CT1, CT2, DECT, etc.)

Radar detect or s

Pagers and satellite TV tuners (SATV)

Repeater amplifiers in fiber-optic systems.

1.4 Quick reference data

BFR520

NPN 9 GHz wideband transistor

Rev. 4 — 13 September 2011 Product data sheet

SOT23

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCBO collector-base voltage - - 20 V

VCES collector-emitter

voltage RBE =0 --15V

ICcollector current (DC) - - 70 mA

Ptot total power dissipation up to Tsp =97C[1] - - 300 mW

hFE DC current gain IC=20mA; V

CE = 6 V 60 120 250

Cre feedback capacitance IC=i

c=0A; V

CB =6V;

f=1MHz -0.4-pF

fTtransition frequency IC=20mA; V

CE =6V;

f=1GHz -9-GHz

GUM maximum unilateral

power gain IC=20mA; V

CE =6V;

Tamb =25C

f = 900 MHz - 15 - dB

f=2GHz - 9 - dB

Product data sheet Rev. 4 — 13 September 2011 2 of 14

NXP Semiconductors BFR520

NPN 9 GHz wideband transistor

[1] Tsp is the temperature at the soldering point of the collector tab.

2. Pinning information

3. Ordering information

4. Marking

[1] * = p: Made in Hong Kong

* = t: Made in Malaysia

* = W: Made in China.

s212insertion power gain IC=20mA; V

CE =6V;

Tamb =25C;

f=900MHz

13 14 - dB

NF noise figure s=opt; Tamb =25C

IC=5mA; V

CE =6V;

f=900MHz -1.11.6dB

IC=20mA; V

CE =6V;

f=900MHz -1.62.1dB

IC=5mA; V

CE =8V;

f=2GHz -1.9-dB

Table 1. Quick reference data …continued

Symbol Parameter Conditions Min Typ Max Unit

Table 2. Pinning

Pin Description Simplified outline Symbol

1base

2emitter

3 collector

sym021

Table 3. Ordering information

Type number Package

Name Description Version

BFR520 - plastic surface mounted package; 3 leads SOT23

Table 4. Marking

Type number Marking code[1]

BFR520 32*

Product data sheet Rev. 4 — 13 September 2011 3 of 14

NXP Semiconductors BFR520

NPN 9 GHz wideband transistor

5. Limiting values

[1] Tsp is the temperature at the soldering point of the collector tab.

6. Thermal characteristics

[1] Tsp is the temperature at the soldering point of the collector tab.

7. Characteristics

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 20 V

VCES collector-emitter voltage RBE =0 -15V

VEBO emitter-base voltage open collector - 2.5 V

ICcollector current (DC) - 70 mA

Ptot total power dissipation up to Tsp =97C[1] -300mW

Tstg storage temperature 65 150 C

Tjjunction temperature - 175 C

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-s) thermal resistance from junction to soldering point [1] 260 K/W

Table 7. Characteristics

Tj=25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector cut-off

current IE=0A; V

CB =6V - - 50 nA

hFE DC current gain IC=20mA; V

CE = 6 V 60 120 250

Ceemitter

capacitance IC=i

c=0A; V

EB =0.5V;

f=1MHz -1-pF

Cccollector

capacitance IE=i

e=0A; V

CB =6V;

f=1MHz -0.5-pF

Cre feedback

capacitance IC=0A; V

CB =6V;

f=1MHz -0.4-pF

fTtransition

frequency IC=20mA; V

CE =6V;

f=1GHz -9-GHz

GUM maximum

unilateral power

gain

IC=20mA; V

CE =6V;

Tamb =25C[1]

f = 900 MHz - 15 - dB

f=2GHz - 9 - dB

s212insertion power

gain IC=20mA; V

CE =6V;

Tamb =25C; f = 900 MHz 13 14 - dB

Product data sheet Rev. 4 — 13 September 2011 4 of 14

NXP Semiconductors BFR520

NPN 9 GHz wideband transistor

[1] GUM is the maximum unilateral power gain, assuming s12 is zero and

[2] IC= 20 mA; VCE =6 V; R

L=50; Tamb =25C; fp= 900 MHz; fq=902MHz

Measured at f(2pq) = 898 MHz and f(2qp) =904MHz.

NF noise figure s=opt; VCE =6V;

Tamb =25C

IC= 5 mA; f = 900 MHz - 1.1 1.6 dB

IC= 20 mA; f = 900 MHz - 1.6 2.1 dB

IC=5mA; f=2GHz - 1.9 - dB

PL(1dB) output power at

1 dB gain

compression

IC=20mA; V

CE =6V;

RL=50; Tamb =25C;

f=900MHz

-17-dBm

ITO third order

intercept point [2] -26-dBm

Table 7. Characteristics …continued

Tj=25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

GUM 10 s21 2

11 2

–1s

22 2

–

----------------------------------------------------- dB.log=

VCE =6V.

Fig 1. Power derating curve. Fig 2. DC current gain as a function of collector

current.

0 50 100 200

400

300

100

200

mra702

150

Ptot

(mW)

Tsp (°C)

mra703

250

100

150

200

(mA)

−1

−2

110 10

Product data sheet Rev. 4 — 13 September 2011 5 of 14

NXP Semiconductors BFR520

NPN 9 GHz wideband transistor

IC = 0 A; f = 1 MHz. Tamb =25C; f = 1 GHz.

Fig 3. Feedback capacitance as a function of

collector-base voltage. Fig 4. Transition frequency as a function of collector

current.

VCE = 6 V; f = 900 MHz. VCE = 6 V; f = 2 GHz.

Fig 5. Gain as a func tio n of co llector current ;

f = 900 MHz. Fig 6. Gain as a function of collector current;

f=2GHz.

mra704

0.6

0.4

0.2

004812

Cre

(pF)

VCB (V)

mra705

(GHz)

IC (mA)

010−111010

VCE = 6 V

3 V

mra706

00102030

gain

(dB)

IC (mA)

MSG Gmax

GUM

mra707

gain

(dB)

(mA)

00102030

Gmax

GUM

Product data sheet Rev. 4 — 13 September 2011 6 of 14

NXP Semiconductors BFR520

NPN 9 GHz wideband transistor

VCE =6 V; I

C=5 mA. V

CE =6 V; I

C= 20 mA.

Fig 7. Gain as a function of frequency; IC = 5 mA. Fig 8. Gain as a function of frequency; IC = 20 mA.

VCE =6 V. V

CE =6 V.

Fig 9. Minimum noise figure and associated

available ga in as functions of collector

current.

Fig 10. Minimum noise figure and associated

available gai n as func tions of freque nc y.

mra708

gain

(dB)

f (MHz)

10 10

max

MSG

mra709

gain

(dB)

f (MHz)

10 10

max

MSG

−5

Gass

(dB)

Fmin

(dB)

IC (mA)

mra714

1102

Fmin

Gass

900

500

1000

2000

f (MHz)

−5

Gass

(dB)

Fmin

(dB)

f (MHz)

mra715

102104

103

Fmin

520

Gass

IC (mA)

Product data sheet Rev. 4 — 13 September 2011 7 of 14

NXP Semiconductors BFR520

NPN 9 GHz wideband transistor

Zo= 50 ; VCE =6 V; I

C= 5 mA; f = 900 MHz.

Fig 11. Noise circle figu re; f = 900 MHz.

Zo= 50 ; VCE =6 V; I

C= 5 mA; f = 2000 MHz.

Fig 12. Noise circle figure; f = 200 0 MHz.

90°

−90°

0.50.2

−5

−2

−0.2

+0.5

−0.5

−1

0.2

0.6

0.4

0.8

1.0

−45°−135°

45°135°

180°0°

mra716

stability

circle

pot. unst.

region

F = 3 dB

F = 2 dB

F = 1.5 dB

min

= 1.1 dB

OPT

+0.2

mra717

90°

−90°

0.50.2

+0.2

−5

−2

−0.2

+0.5

−0.5

−1

0.2

0.6

0.4

0.8

1.0

−45°−135°

45°135°

180°0°

F = 3 dB

F = 2.5 dB

ΓOPT

ΓMS

Fmin = 1. 9 dB

G = 9 dB

G = 8 dB

G = 7 dB

F = 2 dB

Gmax = 9.3 dB

Product data sheet Rev. 4 — 13 September 2011 8 of 14

NXP Semiconductors BFR520

NPN 9 GHz wideband transistor

VCE =6 V; I

C= 20 mA; Zo= 50 .

Fig 13. Common emitter input reflection coefficient (s11).

VCE =6 V; I

C= 20 mA.

Fig 14. Common emitter forward transmission coefficient (s21).

mra710

90°

−90°

0.50.2

+0.2

−5

−2

−0.2

+0.5

−0.5

−1

110 0

0.2

0.6

0.4

0.8

1.0

−45°−135°

45°135°

180°0°

3 GHz

40 MHz

mra711

90°

−90°

−45°−135°

45°135°

0°

180°50 40 30 20 10 3 GHz

40 MHz

Product data sheet Rev. 4 — 13 September 2011 9 of 14

NXP Semiconductors BFR520

NPN 9 GHz wideband transistor

VCE =6 V; I

C= 20 mA.

Fig 15. Common emitter reverse transmission coefficient (s12).

VCE =6 V; I

C= 20 mA; Zo= 50 .

Fig 16. Common emitter output reflection coefficient (s22).

mra712

90°

−90°

−45°−135°

45°135°

0°

180°0.5 0.4 0.3 0.2 0.1

3 GHz

40 MHz

mra713

90°

−90°

0.50.2

+0.2

−5

−2

−0.2

+0.5

−0.5

−1

110 0

0.2

0.6

0.4

0.8

1.0

−45°−135°

45°135°

180°0°

3 GHz

40 MHz

Product data sheet Rev. 4 — 13 September 2011 10 of 14

NXP Semiconductors BFR520

NPN 9 GHz wideband transistor

8. Package outline

Fig 17. Package outline SOT23 (TO-236AB).

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT23

Product data sheet Rev. 4 — 13 September 2011 11 of 14

NXP Semiconductors BFR520

NPN 9 GHz wideband transistor

9. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFR520 v.4 20110913 Product data sheet - BFR520 v.3

Modifications: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

•Package outline drawings have been updated to the latest version.

BFR520 v.3

(9397 750 13397) 20040901 Product data sheet - BF R520_CNV v.2

BFR520_CNV v.2 19971204 Product specification - -

Product data sheet Rev. 4 — 13 September 2011 12 of 14

NXP Semiconductors BFR520

NPN 9 GHz wideband transistor

10. Legal information

10.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device (s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

10.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conf lict with the short data sheet, the

full data sheet shall pre vail.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyon d those described in the

Product data sheet.

10.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregat e and cumulative liabil ity towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descripti ons, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

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authorized or warranted to be suit able for use in life support, life-crit ical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or envi ronmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associate d with t heir

applications and products.

NXP Semiconductors does not accept any liabil ity related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the appl ication or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and pro ducts using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress rating s only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the obj ective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 4 — 13 September 2011 13 of 14

NXP Semiconductors BFR520

NPN 9 GHz wideband transistor

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors prod uct is automotive qualified,

the product is not suitable for automo tive use. It i s neit her qualif ied nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims result ing from custome r design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specif ications.

10.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

11. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an em ail to: salesaddresses@nxp.com

NXP Semiconductors BFR520

NPN 9 GHz wideband transistor

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 13 September 2011

Document identifier: BFR520

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

12. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

10 Legal information . . . . . . . . . . . . . . . . . . . . . . . 12

10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

10.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

11 Contact information. . . . . . . . . . . . . . . . . . . . . 13

12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14