This is information on a product in full production.
December 2014 DocID026371 Rev 2 1/18
STGW15S120DF3,
STGWA15S120DF3
Trench gate field-stop IGBT, S series
1200 V, 15 A low drop
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•10 µs of short- c ircuit with sta nd tim e
•V
CE(sat)
= 1.55 V (typ.) @ I
C
= 15 A
•Tight parameter distribution
•Safer paralleling
•Low thermal resistance
•Soft and fast recovery antiparallel diode
Applications
•Industrial drives
•UPS
•Solar
•Welding
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the S series of
1200 V IGBTs which is tailored to maximize
efficiency of low frequency industrial systems.
Furthermore, a positive V
CE(sat)
temperature
coefficient and tight parameter distribution result
in safer paralleling operation.
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Table 1. Device summary
Order code Marking Package Packing
STGW15S120DF3 G15S120DF3 TO-247 Tube
STGWA15S120DF3 G15S120DF3 TO-247 long leads Tube
www.st.com
Contents STGW15S120DF3, STGWA15S120DF3
2/18 DocID026371 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.1 TO-247, STGW15S120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.2 T O-247 long leads, STGWA15S120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
DocID026371 Rev 2 3/18
STGW15S120DF3, STGWA15S120DF3 Electrical ratings
18
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0) 1200 V
I
C
Continu ous collec tor current at T
C
= 25 °C 30 A
I
C
Continu ous collec tor current at T
C
= 100 °C 15 A
I
CP(1)
1. Pulse width limited by maximum junction temperature.
Pulsed collector current 60 A
V
GE
Gate-emitter voltage ±20 V
I
F
Continuous forward current at T
C
= 25 °C 30 A
I
F
Continuous forward current at T
C
= 100 °C 15 A
I
FP(1)
Pulsed forward current 60 A
P
TOT
Total dissipation at T
C
= 25 °C 259 W
T
STG
Storage temperature range - 55 to 150 °C
T
J
Operating junction temperature - 55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance juncti on -cas e IGBT 0.58 °C/W
R
thJC
Thermal resistance juncti on -cas e dio de 1.3 °C/W
R
thJA
Thermal resistance junction-ambient 50 °C/W
Electrical characteristics STGW15S120DF3, STGWA15S120DF3
4/18 DocID026371 Rev 2
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0) I
C
= 2 mA 1200 V
V
CE(sat)
Collect or-emitter sat uration
voltage
V
GE
= 15 V, I
C
= 15 A 1.55 2.05
V
V
GE
= 15 V, I
C
= 15 A,
T
J
=125 °C 1.75
V
GE
= 15 V, I
C
= 15 A
T
J
= 175 °C 1.85
V
F
Forward on-voltage
I
F
= 15 A 2.7 3.8 V
I
F
= 15 A T
J
= 125 °C 2.05 V
I
F
= 15 A T
J
= 175 °C 1.75 V
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 500 µA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0) V
CE
= 1200 V 25 µA
I
GES
Gate-emitter leakage
current (V
CE
= 0) V
GE
= ± 20 V 250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input cap ac itance
V
CE
= 25 V, f = 1 MHz,
V
GE
=0
-981-pF
C
oes
Output capacitance - 82 - pF
C
res
Reverse transfer
capacitance -37-pF
Q
g
Total gate charge V
CC
= 960 V, I
C
=15 A,
V
GE
= 15 V, see Figure 30
-53-nC
Q
ge
Gate-emitter charge - 7.8 - nC
Q
gc
Gate-collector charge - 28.2 - nC
DocID026371 Rev 2 5/18
STGW15S120DF3, STGWA15S120DF3 Electrical characteristics
18
Table 6. IGBT switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
CE
= 600 V, I
C
= 15 A,
V
GE
= 15 V, R
G
= 22 Ω
see Figure 29
-23-ns
t
r
Current rise time - 10 - ns
(di/dt)
on
Turn-on current slope - 1200 - A/µs
t
d(off)
Turn-off delay time - 140 - ns
t
f
Current fall time - 282 - ns
E
on(1)
1. Energy losses include reverse recovery of the diode.
Turn-on switching losses - 0.54 - mJ
E
off(2)
2. Turn-off losses also include the tail of the collector current.
Turn-off swit ching losses - 1.375 - mJ
E
ts
Total switching losses - 1.912 - mJ
t
d(on)
Turn-on delay time
V
CE
= 600 V, I
C
= 15 A,
R
G
= 22 Ω, V
GE
= 15 V,
T
J
= 175 °C, see Figure 29
-22-ns
t
r
Current rise time - 9.2 - ns
(di/dt)
on
Turn-on current slope - 983 - A/µs
t
d(off)
Turn-off delay time - 146 - ns
t
f
Current fall time - 438 - ns
E
on(1)
Turn-on switching losses - 0.923 - mJ
E
off(2)
Turn-off switching losses - 1.85 - mJ
E
ts
Total switching losses - 2.772 - mJ
t
sc
Short-circuit withstand time V
CC
≤
600 V, V
GE
= 15 V,
T
Jstart
≤ 150 °C, V
P
< 1200 V 10 - µs
Table 7. Diode switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. U nit
t
rr
Reverse recovery time
I
F
= 15 A, V
R
= 600 V,
V
GE
= 15 V, see Figure 29
di/dt = 1000 A/µs
- 270 - ns
Q
rr
Reverse recovery charge - 960 - nC
I
rrm
Reverse recovery current - 15 - A
dl
rr/
/dt Peak rate of fall of reverse
recovery current during t
b
- 935 - A/µs
E
rr
Reverse recovery energy - 0.18 - mJ
t
rr
Reverse recovery time
I
F
= 15 A, V
R
= 600 V,
V
GE
= 15 V, T
J
= 175 °C,
see Figure 29
di/dt = 1000 A/µs
- 534 - ns
Q
rr
Reverse recovery charge - 3456 - nC
I
rrm
Reverse recovery current - 23 - A
dI
rr/
/dt Peak rate of fall of reverse
recovery current during t
b
- 266 - A/µs
E
rr
Reverse recovery energy - 0.55 - mJ
Electrical characteristics curves STGW15S120DF3, STGWA15S120DF3
6/18 DocID026371 Rev 2
3 Electrical characteristics curves
Figure 2. Power dissipation vs. case
temperature Figure 3. Collector current vs. case temperature
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Figure 4. Outpu t char acter ist ics (T
J
= 25 °C) Figure 5. Output characteristics (T
J
= 175 °C)
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9
9*( 9
9
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9
9*( 9
9
9
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Figure 6. V
CE(sat)
vs. junction temperature Figure 7. V
CE(sat)
vs. collector current
7
-
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9
*(
9
9
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-
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7
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9
*(
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9
&(VDW
9
7
-
&
*,3*/0
DocID026371 Rev 2 7/18
STGW15S120DF3, STGWA15S120DF3 Electrical characteristics curves
18
Figure 8. Collector current vs. switching
frequency Figure 9. Forward bias safe operating area
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V
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Figure 10. Transfer characteristics Figure 11. Diode V
F
vs. forward curren t
,&
9*(9
$
7- &
7- &
9&( 9
*,3*/0
9)
,)$
9
7- &
7- &
7- &
*,3*/0
Figure 12. Normalized V
GE(th)
vs. junction
temperature Fig ure 13. Normali ze d V
BR(CES)
vs. junction
temperature
9*(7+
7-&
QRUP
,& $9&( 9*(
*,3*/0
9%5&(6
7-&
QRUP
,& P$
*,3*/0
Electrical characteristics curves STGW15S120DF3, STGWA15S120DF3
8/18 DocID026371 Rev 2
Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage
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9&(9
S)
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*,3*/0
9
*(
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J
Q&
9
9
&&
9 ,
&
$,
*
P$
*,3*/0
Figure 16. Switching loss vs. collector current Figure 17. Switching loss vs. gate resistance
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P-
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(RQ
5* ȍ9&& 9
7
-
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*(
9
*,3*/0
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5*ȍ
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(RQ
,& $9&& 9
7
-
&
9
*(
9
*,3*/0
Figure 18. Switching loss vs. temperature
Figure 19. Switching loss vs. collector emitter
voltage
(
7-&
P-
(
RII
(RQ
,& $9&& 9
5
*
ȍ
9
*(
9
*,3*/0
(
9
&(
9
P-
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RII
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RQ
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*(
9
5
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ȍ
7
M
&
*,3*/0
DocID026371 Rev 2 9/18
STGW15S120DF3, STGWA15S120DF3 Electrical characteristics curves
18
Figure 20. Short-circuit time and current vs V
GE
Figure 21. Switching times vs. collector current
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V
9
*(9
W
6&
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,
6&
9
&& 97
-&
*,3*/0
W
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WI
WGRII
WGRQ
WU
9
&&
99*( 9
5
*
ȍ
7
M
&
*,3*/0
Figure 22. Switching times vs. gate resistance
Figure 23. Reverse recovery current vs. diode
current slope
W
5
*
ȍ
QV
WI
WGRII
WGRQ
WU
9
&&
99
*(
9
,
F $7
-
&
*,3*/0
9
&&
99*( 9
,
)
$7
- &
GLGW$V
,
UUP
$
*,3*/0
Figure 24. Reverse recovery time vs. diode
current slope Figure 25. Reverse recovery charge vs. diode
current slope
9
&& 99*( 9
,
)
$7- &
WUU
QV
GLGW$V
*,3*/0
9&& 99*( 9
,
)
$
7- &
4UU
&
GLGW$V
*,3*/0
Electrical characteristics curves STGW15S120DF3, STGWA15S120DF3
10/18 DocID026371 Rev 2
Figure 26. Reverse recovery energy vs. diode
current slope
9
&& 99*( 9
,
)
$
7
- &
(UU
P-
GLGW$V
*,3*/0
DocID026371 Rev 2 11/18
STGW15S120DF3, STGWA15S120DF3 Electrical characteristics curves
18
Figure 27. Thermal impedance for IGBT
Figure 28. Thermal impedance for diode
10
-5
10
-4
10
-3
10
-2
10
-1
t
p(s)
10
-2
10
-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/τ
tp
Single pulse
δ=0.5
τ
ZthTO2T_B
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V
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Test circuits STGW15S120DF3, STGWA15S120DF3
12/18 DocID026371 Rev 2
4 Test circuits
Figure 29. Test circuit for inductive load
switching Figure 30. Gate charge test circuit
Figure 31. Switching waveform Figure 32. Diode recovery time waveform
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Tr(Voff)
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90%
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di/dt
trr
tstf
Qrr
IRRM
t
VRRM
dv/dt
10%
DocID026371 Rev 2 13/18
STGW15S120DF3, STGWA15S120DF3 Package information
18
5 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST tradema rk .
5.1 TO-247, STGW15S120DF3
Figure 33. TO-247 outline
0075325_H
Package information STGW15S120DF3, STGWA15S120DF3
14/18 DocID026371 Rev 2
Table 8. TO-247 mechanical data
Dim. mm
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
DocID026371 Rev 2 15/18
STGW15S120DF3, STGWA15S120DF3 Package information
18
5.2 T O-247 long leads, STGWA15S120DF3
Figure 34. TO-247 long lead outline
8463846_A_F
Package information STGW15S120DF3, STGWA15S120DF3
16/18 DocID026371 Rev 2
Table 9. TO-247 long leads mechanical data
Dim. mm
Min. Typ. Max.
A4.905.005.10
A1 2.31 2.41 2.51
A2 1.90 2.00 2.10
b1.16 1.26
b2 3.25
b3 2.25
c0.59 0.66
D 20.90 21.00 21.10
E 15.70 15.80 15.90
E2 4.90 5.00 5.10
E3 2.40 2.50 2.60
e5.345.445.54
L 19.80 19.92 20.10
L1 4.30
P3.503.603.70
Q5.60 6.00
S6.056.156.25
STGW15S120DF3, STGWA15S120DF3
18/18 DocID026371 Rev 2
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