©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
September 2005
QSB363C Rev. 1.0.2
QSB363C Subminiature Plastic Silicon Infrared Phototransistor
QSB363C
Subminiature Plastic Silicon Infrared Phototransistor
Features
■
NPN Silicon Phototransistor
■
T-3/4 (2mm) Surface Mount Package
■
Medium Wide Beam Angle, 24°
■
Clear Plastic Package
■
Matched Emitters: QEB363 or QEB373
■
Tape & Reel Option (See Tape & Reel Specifications)
■
Lead Form Options: Gullwing, Yoke, Z-Bend
Description
The QSB363C is a silicon phototransistor encapsulated in a clear
infrared T-3/4 package.
Package Dimensions
SCHEMATIC
EMITTER
COLLECTOR
0.074 (1.9)
0.008 (0.21)
0.004 (0.11)
0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.024 (0.6)
0.016 (0.4)
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
0.276 (7.0)
MIN
0.024 (0.6)
.059 (1.5)
.051 (1.3)
.118 (3.0)
.102 (2.6)
EMITTER
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
2
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QSB363C Rev. 1.0.2
QSB363C Subminiature Plastic Silicon Infrared Phototransistor
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Notes
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Pulse conditions: tp = 100 µs, T = 10 ms.
5. D = 940 nm, GaAs.
Electrical/Optical Characteristics
(T
A
=25°C)
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-25 to +85 °C
Storage Temperature T
STG
-40 to +85 °C
Soldering Temperature (Iron)
(2,3,4)
T
SOL
260 °C
Soldering Temperature (Flow)
(2,3)
T
SOL
260 °C
Collector Emitter Voltage V
CEO
30 V
Emitter Collector Voltage V
ECO
5V
Power Dissipation
(1)
P
C
75 mW
Parameters Test Conditions Symbol Min. Typ. Max Units
Peak Sensitivity Wavelength
λ
P
— 940 — nm
Reception Angle
Θ
— ±12 —
Collector Dark Current V
CE
= 20V, Ee = 0mW/cm
2
I
CEO
——100 nA
Collector-Emitter Breakdown Voltage I
C
= 100 µA, Ee = 0mW/cm
2
BV
CEO
30 — — V
Emitter-Collector Breakdown Voltage I
E
= 100 µA, Ee = 0mW/cm
2
BV
ECO
5——V
On-State Collector Current V
CE
= 5V
Ee = 0.5 mW/cm
2
I
C(on)
1.0 1.5 — mA
Collector-Emitter Saturation Voltage I
C
= 2 mA
Ee = 1 mW/cm
2
V
CE (SAT)
——0.4 V
Rise Time
Fall Time
V
CE
= 5 V,
I
C
= 1 mA
R
L
= 1000
Ω
t
r
t
f
—
—
15
15
—
—
µs
µs
3
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QSB363C Rev. 1.0.2
QSB363C Subminiature Plastic Silicon Infrared Phototransistor
Typical Performance Curves
Collector Dark Current ICEO (A)
Ambient Temperature (°C)
10-10
10-9
10-8
10-7
10-6
5
2
5
2
5
2
5
2
025 50 75 100
Fig. 5 Collector Dark Current vs.
Ambient Temperature
100
80
60
40
20
0
-25
025
50 75 85 100
Ambient Temperature TA (˚C) Wavelength λ (nm)
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
Collector Power
Dissipation Pd (mW)
Fig. 3 Relative Collector Current vs.
Ambient Temperature
Relative Collector Current (%)
Ambient Temperature TA (˚C)
0
20
40
60
80
100
010 20 30 40 50 60 70
120
140
160
VCE = 5 V
Ee = 1 mW/cm
2
14
12
10
8
6
4
2
0
01234
Collector Current IC (mA)
Collector Emitter Voltage V
CE
(V)
Fig. 6 Collector Current vs.
Collector Emitter Voltage
Fig. 4 Collector Current vs.
Irradiance
Collector Current IC (mA)
Irradiance E
e
(mW/cm
2
)
0.01 0.1 110
0.001
0.01
0.1
1
10 V
CE
= 5 V
T
A
= 25˚C
Fig. 2 Spectral Sensitivity
0
0.2
0.4
0.6
0.8
1.0
Relative Spectral Sensitivity
100 300 500 700 900 1100 1300
V
Ee=1.50mW/cm
2
Ee=1.25mW/cm
2
Ee=1.0mW/cm
2
Ee=0.75mW/cm
2
Ee=0.5mW/cm
2
CE = 20 V
T
A
= 25˚C
4
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QSB363C Rev. 1.0.2
QSB363C Subminiature Plastic Silicon Infrared Phototransistor
Package Dimensions
Features
■
Three lead forming options: Gull Wing, Yoke and Z-Bend
■
Compatible with automatic placement equipment
■
Supplied on tape and reel or in bulk packaging
■
Compatible with vapor phase reflow solder processes
Gull Wing Lead Configuration Z-Bend Lead Configuration
0.098±0.004
(2.5±0.1)
0.157±0.008
(4.0±0.2)
0.043±0.008
(1.1±0.2)
0.055±0.008
(1.4±0.2)
0.012±0.004
(0.3±0.1)
0.029±0.004
(0.75±0.1)
R0.031±.004
(0.8±0.1)
(0.83 )
+0.13
–0
0.032 +0.005
–0
Polarity
+–
C
L
C
L
0.020±0.004
(0.5±0.1)
0.006±0.002
(0.15±0.05)
0.016±0.004
(0.4±0.1)
0.079±0.008
(2.0±0.2)
0.106±0.008
(2.7±0.2)
0.055±0.004
(1.4±0.1)
0.051±0.004
(1.3±0.1)
0.025±0.004
(0.65±0.1)
ø0.075±0.008
(ø1.9±0.2)
Cathode
(0.6 )
+0.13
–0
0.023 +0.005
–0
0.098±0.004
(2.5±0.1)
0.043±0.008
(1.1±0.2)
0.055±0.008
(1.4±0.2)
0.12±0.008
(3.05±0.2)
0.169±0.008 (4.3±0.2)
0.228±0.008 (5.8±0.2) 0.029±0.004
(0.75±0.1)
R0.031±.004
(0.8±0.1)
Polarity
+–
C
L
C
L
0.020±0.004
(0.5±0.1)
0.006±0.002
(0.15±0.05)
0.016±0.004
(0.4±0.1)
0.079±0.008
(2.0±0.2)
0.106±0.008
(2.7±0.2)
0.055±0.004
(1.4±0.1)
0.051±0.004
(1.3±0.1)
0.025±0.004
(0.65±0.1)
ø0.075±0.008
(1.9±0.2)
Cathode
Yoke Lead Configuration
0.098±0.004
(2.5±0.1)
0.043±0.008
(1.1±0.2)
0.055±0.008
(1.4±0.2)
0.185±0.008 (4.7±0.2)
0.291±0.008 (7.4±0.2)
0.029±0.004
(0.75±0.1)
R0.031±.004
(0.8±0.1)
R0.016±.004
(0.4±0.1)
Polarity
+–
C
L
C
L
0.020±0.004
(0.5±0.1)
0.006±0.002
(0.15±0.05)
0.016±0.004
(0.4±0.1)
0.079±0.008
(2.0±0.2)
0.106±0.008
(2.7±0.2)
0.055±0.004
(1.4±0.1)
0.051±0.004
(1.3±0.1)
0.025±0.004
(0.65±0.1)
ø0.075±0.008
(1.9±0.2)
Cathode
5
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QSB363C Rev. 1.0.2
QSB363C Subminiature Plastic Silicon Infrared Phototransistor
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
Full Production
Not In Production
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