2SD1805 Ordering number : EN2115C SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SD1805 High-Current Switching Applications Applications * Strobes, voltage regulators, relay drivers, lamp drivers Features * * Low saturation voltage Large current capacity Fast switching time Small and slim package making it easy to make 2SD1805-applied sets smaller * * Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25C Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-003 7003-003 0.5 1.5 0.5 1 2 2.3 0.8 1.2 7.5 0.8 1.6 0.6 1 1 : Base 2 : Collector 3 : Emitter 4 : Collector 2.3 2 6 V 5 A 8 A 1 W 15 W 150 C --55 to +150 C 2SD1805F-TL-E 2SD1805G-TL-E 3 0 to 0.2 0.6 0.5 3 2.5 0.85 0.85 0.7 V 1.2 4 5.5 5.5 4 2.3 6.5 5.0 2SD1805F-E 2SD1805G-E 7.0 1.5 0.5 V 20 7.0 2.3 6.5 5.0 Unit 60 1.2 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA SANYO : TP Product & Package Information * Package : TP * JEITA, JEDEC : SC-64, TO-251 * Minimum Packing Quantity : 500 pcs./bag Marking (TP, TP-FA) * Package : TP-FA * JEITA, JEDEC : SC-63, TO-252 * Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL Electrical Connection 2,4 D1805 RANK 1 LOT No. TL 3 http://semicon.sanyo.com/en/network 60612 TKIM TA-4167/22599TH (KT)/8309MO/5277KI/O236KI, TS No.2115-1/9 2SD1805 Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings min typ max ICBO IEBO VCB=50V, IE=0A VEB=5V, IC=0A hFE1 VCE=2V, IC=500mA hFE2 VCE=2V, IC=3A fT Cob VCE=10V, IC=50mA 120 VCB=10V, f=1MHz IC=3A, IB=60mA 45 VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Conditions 120* Unit 100 nA 100 nA 560* 95 220 IC=3A, IB=60mA MHz pF 500 mV 1.5 V V(BR)CBO V(BR)CEO IC=10A, IE=0A 60 V IC=1mA, RBE= 20 V V(BR)EBO ton IE=10A, IC=0A 6 tstg tf See specified Test Circuit V 30 ns 300 ns 40 ns * : The 2SD1805 is classified by 500mA hFE as follows. Rank E F G hFE 120 to 200 160 to 320 280 to 560 Switching Time Test Circuit IB1 PW=20s D.C.1% INPUT OUTPUT IB2 VR RB + 100F RL + 470F VBE VCC IC=10IB1= --10IB2=2A, VCC=10V Ordering Information Device 2SD1805F-E 2SD1805G-E Package Shipping TP 500pcs./bag TP 500pcs./bag 2SD1805F-TL-E TP-FA 700pcs./reel 2SD1805G-TL-E TP-FA 700pcs./reel memo Pb Free No.2115-2/9 2SD1805 IC -- VCE 5 30mA A 4 20mA 3 15mA 10mA 2 5mA 1 2 3 20mA 3 15mA 10mA 2 5mA IB=0 0 4 5 Collector-to-Emitter Voltage, VCE -- V 0 0.2 0.4 0.6 0.8 1.0 Collector-to-Emitter Voltage, VCE -- V ITR10035 IC -- VBE 6 30mA 4 1 IB=0 0 1 A 50m 40mA A m 60 Collector Current, IC -- A Collector Current, IC -- A 40m 0 IC -- VCE 5 hFE -- IC 1000 VCE=2V ITR10036 VCE=2V 7 DC Current Gain, hFE 5 4 3 2 Ta= 75 C 25 C --25 C Collector Current, IC -- A 5 1 2 --25C 100 7 3 2 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 5 3 3 2 100 7 5 3 0.1 2 3 5 2 1.0 3 5 10 ITR10038 Cob -- VCB 2 Output Capacitance, Cob -- pF 5 5 Collector Current, IC -- A VCE=10V 7 2 0.01 ITR10037 fT -- IC 1000 Gain-Bandwidth Product, fT -- MHz 25C C Ta=75 5 0 f=1MHz 100 7 5 3 2 2 10 2 10 3 5 7 2 100 3 5 Collector Current, IC -- mA 10 1.0 7 1000 ITR10039 3 2 100 7 C 25 5 Ta=75C 3 --25C 2 5 7 2 10 3 5 7 100 ITR10040 VBE(sat) -- IC IC / IB=50 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 10 IC / IB=50 7 2 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 5 3 2 1.0 Ta= --25C 25C 7 75C 5 3 2 10 5 0.01 2 3 5 0.1 2 3 5 1.0 Collector Current, IC -- A 2 3 5 10 ITR10041 5 0.01 2 3 5 0.1 2 3 5 1.0 Collector Current, IC -- A 2 3 5 10 ITR10042 No.2115-3/9 2SD1805 ASO 2 7 5 15 ICP IC 1 1 ms 10 0ms 0m DC s Tc op =2 era 5 tio C n 3 2 DC 1.0 op era 7 5 14 Collector Dissipation, PC -- W Collector Current, IC -- A 10 tio 3 nT a= 25 C 2 0.1 7 5 2 3 12 10 8 6 4 2 Tc=25C Single pulse 3 0.1 PC -- Ta 16 No heat sink 1 0 5 7 1.0 2 3 5 7 10 Collector-to-Emitter Voltage, VCE -- V 2 3 ITR10043 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 ITR10044 No.2115-4/9 2SD1805 Taping Specification 2SD1805F-TL-E, 2SD1805G-TL-E No.2115-5/9 2SD1805 Outline Drawing 2SD1805F-TL-E, 2SD1805G-TL-E Land Pattern Example Mass (g) Unit 0.282 mm * For reference Unit: mm 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No.2115-6/9 2SD1805 Bag Packing Specification 2SD1805F-E, 2SD1805G-E No.2115-7/9 2SD1805 Outline Drawing 2SD1805F-E, 2SD1805G-E Mass (g) Unit 0.315 mm * For reference No.2115-8/9 2SD1805 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No.2115-9/9