GaAs SPDT 2.5 V High Power Switch
DC - 3.0 GHz
Rev. V3
MASWSS0181
1
1
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DC-0008095
1
Features
Low Voltage Operation: 2.5 V
Harmonics: <-67 dBc @ +34 dBm & 1 GHz
Low Insertion Loss: 0.40 dB @ 1 GHz
High Isolation: 20 dB @ 2 GHz
0.5 micron GaAs pHEMT Process
Lead-Free SOT-26 Package
100% Matte Tin Plating over Copper
Halogen-Free “Green” Mold Compound
260°C Reflow Compatible
RoHS* Compliant Version of MASWSS0006
Description
The MASWSS0181 is a GaAs PHEMT MMIC single
pole two throw (SPDT) high power switch in a
lead-free SOT-26 package. The MASWSS0181 is
ideally suited for applications where high power, low
control voltage, low insertion loss, high isolation,
small size and low cost are required.
Typical applications are for GSM and DCS handset
systems that connect separate transmit and receive
functions to a common antenna, as well as other
related handset and general purpose applications.
This part can be used in all systems operating up to
3 GHz requiring high power at low control voltage.
The MASWSS0181 is fabricated using a 0.5 micron
gate length GaAs pHEMT process. The process
features full passivation for performance and
reliability.
Ordering Information1
Part Number Package
MASWSS0181 Bulk Packaging
MASWSS0181TR-3000 3000 piece reel
MASWSS0181SMB Sample Test Board
1. Reference Application Note M513 for reel size information.
Pin # Pin Name Description
1 RF1 RF Port 1
2 GND RF Ground
3 RF2 RF Port 2
4 V2 Control 2
5 RFC RF Common Port
6 V1 Control 1
Pin Configuration
Functional Schematic
Parameter Absolute Maximum
Input Power
(0.5 - 3 GHz, 2.5 V Control) 38 dBm
Voltage ±8.5 V
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
Absolute Maximum Ratings2,3
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. MACOM does not recommend sustained operation near these
survivability limits.
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
Pin 1
100 pF
100 pF
100 pF
RFC
V1
Pin 6
RF1
GND
V2
RF2