2SK3817 Ordering number : ENN8055 2SK3817 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features * * * * * Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 20 V ID 60 A Drain Current (DC) Drain Current (Pulse) IDP PW10s, duty cycle1% 240 A 1.65 W Allowable Power Dissipation PD 65 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Enargy (Single Pulse) *1 EAS 135 mJ Avalanche Current *2 IAV 60 A Tc=25C Note : *1 VDD=20V, L=50H, IAV=60A *2 L50H, single pulse Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions Ratings min typ ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= 16V, VDS=0 60 IDSS IGSS VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=30A 1.2 RDS(on)1 RDS(on)2 ID=30A, VGS=10V ID=30A, VGS=4V Unit max V 10 A A 2.6 V 11.5 15 m 16 22 m 1 24 Marking : K3817 40 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company http://semicon.sanyo.com/en/network TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2404QA TS IM TB-00000611 No.8055-1/4 2SK3817 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 3500 Output Capacitance 500 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 350 pF Turn-ON Delay Time td(on) See specified Test Circuit. 26 ns Rise Time tr td(off) See specified Test Circuit. 230 ns See specified Test Circuit. 255 ns tf See specified Test Circuit. 230 ns nC Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=30V, VGS=10V, ID=60A 67 Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=60A 10.6 nC Gate-to-Drain "Miller" Charge Qgd VDS=30V, VGS=10V, ID=60A 10 nC Diode Forward Voltage VSD IS=60A, VGS=0 10.2 1.6 9.9 8.8 0.8 0.9 11.5 1.3 4.5 0.4 3 2.55 2 1.2 2.55 2.55 2.55 2.55 2.55 1.3 3 2.7 1 : Gate 2 : Drain 3 : Source 2.7 2 1 0.8 1.35 11.0 9.4 3.0 20.9 1.2 1 V 1.4 4.5 10.2 0.8 1.5 Package Dimensions unit : mm 2090A 1.5max 8.8 Package Dimensions unit : mm 2093A 1.07 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD SANYO : SMP Switching Time Test Circuit Unclamped Inductive Test Circuit VDD=30V VIN 10V 0V 50 RG ID=30A RL=1.0 VIN D L DUT VOUT PW=10s D.C.1% 15V 0V G 50 VDD 2SK3817 P.G 50 S No.8055-2/4 2SK3817 20 VGS=3V 10 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 25 20 Tc=75C 25C --25C 5 0 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 5C --2 = Tc C 75 10 7 5 3 2 1.0 7 5 3 0.1 3.5 4.0 4.5 5.0 IT07824 25 4V S= G A, V 20 30 I D= V 10 S= , VG 30A 15 I D= 10 5 --25 0 25 50 75 100 125 150 IT07826 IF -- VSD 100 7 5 3 2 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S C 25 2 3.0 Case Temperature, Tc -- C 5 3 2.5 30 0 --50 10 VDS=10V 7 2.0 RDS(on) -- Tc IT07825 yfs -- ID 100 1.5 35 Static Drain-to-Source On-State Resistance, RDS(on) -- m 30 10 1.0 Gate-to-Source Voltage, VGS -- V ID=30A 15 0.5 IT07823 RDS(on) -- VGS 35 Static Drain-to-Source On-State Resistance, RDS(on) -- m 2.0 VGS=0 10 7 5 3 2 1.0 7 5 3 2 Tc=7 5C 25C --25C 0.2 Drain-to-Source Voltage, VDS -- V 0.1 7 5 3 2 0.01 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 7 100 IT07827 0 0.3 0.6 0.9 1.2 1.5 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 IT07828 Ciss, Coss, Crss -- VDS 7 f=1MHz VDD=30V VGS=10V 5 Ciss td(off) 3 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns Tc= 0 0 5 20 10 0 7 30 C 30 40 =7 5C 40 50 --25 50 60 25 4V C Tc Drain Current, ID -- A 70 75 C VDS=10V --25 C 6V V 10 60 Tc=25C 8V Drain Current, ID -- A 70 ID -- VGS 80 25 C ID -- VDS 80 tf 100 7 tr 5 td(on) 3 3 2 1000 7 Coss 5 Crss 2 3 10 0.1 2 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT07829 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT07830 No.8055-3/4 2SK3817 VGS -- Qg 10 8 7 6 5 4 3 2 100 7 5 ID=60A 3 2 10 7 5 Operation in this area is limited by RDS(on). 3 2 1.0 7 5 0 10 20 30 40 50 60 Total Gate Charge, Qg -- nC 70 80 2 3 5 7 1.0 Allowable Power Dissipation, PD -- W 1.5 1.0 0.5 3 5 7 10 2 3 5 7 100 IT07832 PD -- Tc 80 1.65 2 Drain-to-Source Voltage, VDS -- V IT07831 PD -- Ta 2.0 1m 10 s m DC 100m s s op era tio n s 0 s Tc=25C Single pulse 0.1 0.1 0 10 10 3 2 1 Allowable Power Dissipation, PD -- W IDP=240A 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 ASO 5 VDS=30V ID=60A 70 65 60 50 40 30 20 10 0 0 0 20 40 60 80 100 120 Amibient Tamperature, Ta -- C 140 160 IT07811 0 20 40 60 80 100 120 140 Case Tamperature, Tc -- C 160 IT07833 Note on usage : Since the 2SK3817 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2004. Specifications and information herein are subject to change without notice. PS No.8055-4/4