AP4569GH - Advanced Power Electronics Corp. USA

Advanced Power N AND P-CHANNEL ENHANCEMENT

Electronics Corp. MODE POWER MOSFET

▼ Simple Drive Requirement N-CH BVDSS 40V

▼ Good Thermal Performance RDS(ON) 42mΩ

▼ Fast Switching Performance ID10.5A

▼ RoHS Compliant P-CH BVDSS -40V

RDS(ON) 75mΩ

Description ID-8A

Absolute Maximum Ratings

Symbol Parameter Rating Units

N-channel P-channel

VDS Drain-Source Voltage 40 -40 V

VGS Gate-Source Voltage ±20 ±20 V

ID@TC=25℃Continuous Drain Current3 10.5 -8 A

ID@TC=100℃Continuous Drain Current3 6.6 -5 A

IDM Pulsed Drain Current1 40 -40 A

PD@TC=25℃ Total Power Dissipation 8 W

Linear Derating Factor 0.06 W/℃

TSTG Storage Temperature Range -55 to 150 ℃

TJOperating Junction Temperature Range -55 to 150 ℃

Symbol Value Units

Rthj-c Thermal Resistance Junction-case3Max. 16 ℃/W

Rthj-a Thermal Resistance Junction-ambient3Max. 110 ℃/W

Data and specifications subject to change without notice

Parameter

200628062-1/7

Thermal Data

AP4569GH

Pb Free Plating Product

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-

effectiveness.

TO-252-4L

G1 S2 G2

D1/D2

N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 40 - - V

ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/℃

RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=6A - - 42 mΩ

VGS=4.5V, ID=4A - - 60 mΩ

VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.8 - 2.5 V

gfs Forward Transconductance VDS=10V, ID=6A - 6 - S

IDSS Drain-Source Leakage Current (Tj=25oC) VDS=40V, VGS=0V - - 1 uA

Drain-Source Leakage Current (Tj=150oC) VDS=32V, VGS=0V - - 25 uA

IGSS Gate-Source Leakage VGS=±20V - - ±100 nA

QgTotal Gate Charge2ID=6A - 6 10 nC

Qgs Gate-Source Charge VDS=30V - 1.2 - nC

Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.2 - nC

td(on) Turn-on Delay Time2VDS=20V - 3.7 - ns

trRise Time ID=1A - 8.8 - ns

td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 17.6 - ns

tfFall Time RD=20Ω- 3.6 - ns

Ciss Input Capacitance VGS=0V - 330 530 pF

Coss Output Capacitance VDS=25V - 70 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 55 - pF

RgGate Resistance f=1.0MHz - 1.5 2.3 Ω

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage2IS=6A, VGS=0V - - 1.3 V

trr Reverse Recovery Time IS=6A, VGS=0V - 19 - ns

Qrr Reverse Recovery Charge dI/dt=100A/µs - 13 - nC

2/7

AP4569GH

P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -40 - - V

ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA - -0.03 - V/℃

RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-5A - - 75 mΩ

VGS=-4.5V, ID=-3A - - 100 mΩ

VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.8 - -2.5 V

gfs Forward Transconductance VDS=-10V, ID=-5A - 5 - S

IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-40V, VGS=0V - - -1 uA

Drain-Source Leakage Current (Tj=150oC) VDS=-32V, VGS=0V - - -25 uA

IGSS Gate-Source Leakage VGS=±20V - - ±100 nA

QgTotal Gate Charge2ID=-5A - 7.3 12 nC

Qgs Gate-Source Charge VDS=-30V - 1.3 - nC

Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 3.6 - nC

td(on) Turn-on Delay Time2VDS=-20V - 6.3 - ns

trRise Time ID=-5A - 7.6 - ns

td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 24 - ns

tfFall Time RD=4Ω- 6.8 - ns

Ciss Input Capacitance VGS=0V - 460 740 pF

Coss Output Capacitance VDS=-25V - 80 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF

RgGate Resistance f=1.0MHz - 5.6 8.4 Ω

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage2IS=-5A, VGS=0V - - -1.3 V

trr Reverse Recovery Time IS=-5A, VGS=0V - 22 - ns

Qrr Reverse Recovery Charge dI/dt=-100A/µs - 14 - nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.N-CH , P-CH are same .

3/7

N-Channel

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Forward Characteristic of Fig 6. On-Resistance vs.

Reverse Diode Drain Current

4/7

AP4569GH

02468

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TC=25 oC 10V

7.0V

5.0V

4.5V

VG=3.0V

0246

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TC= 150 oC 10V

7.0V

5.0V

4.5V

VG=3.0V

246810

VGS , Gate-to-Source Voltage (V)

RDS(ON0 (m

)

ID=4A

TC=25 oC

0.8

1.2

1.6

2.0

25 50 75 100 125 150

Tj , Junction Temperature ( oC)

Normalized RDS(ON)

D=6A

VG=10V

0 0.2 0.4 0.6 0.8 1 1.2

VSD , Source-to-Drain Voltage (V)

IS(A)

Tj=25 oCT j=150 oC

20.0

40.0

60.0

80.0

0102030

ID , Drain Current (A)

RDS(ON) (mΩ)

VGS =4.5V

VGS =10V

AP4569GH

N-Channel

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

5/7

4.5V

QGS QGD

Charge

0 4 8 12 16

QG , Total Gate Charge (nC)

VGS , Gate to Source Voltage (V)

ID=6A

VDS =30V

100

1000

1 5 9 1317212529

VDS , Drain-to-Source Voltage (V)

C (pF)

=1.0MH

Ciss

Coss

Crss

0.1

100

0.1 1 10 100

VDS , Drain-to-Source Voltage (V)

ID (A)

TC=25 oC

Single Pulse

1ms

10ms

100ms

0246

VGS , Gate-to-Source Voltage (V)

ID , Drain Current (A)

Tj=150 oCT j=25 oC

VDS =5V

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

t , Pulse Width (s)

Normalized Thermal Response (Rthjc)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

P-Channel

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Forward Characteristic of Fig 6. On-Resistance vs.

Reverse Diode Drain Current

6/7

AP4569GH

0246810

-V DS , Drain-to-Source Voltage (V)

-ID , Drain Current (A)

TC=25 oC - 10V

- 7.0V

- 5.0V

- 4.5V

VG= - 3.0V

0246810

-V DS , Drain-to-Source Voltage (V)

-ID , Drain Current (A)

TC= 150 oC - 10V

- 7.0V

- 5.0V

- 4.5V

VG= - 3.0V

120

160

246810

-V GS , Gate-to-Source Voltage (V)

RDS(ON) (m

)

ID=-3A

TC=25 oC

0.6

1.0

1.4

1.8

25 50 75 100 125 150

Tj , Junction Temperature ( oC)

Normalized RDS(ON)

D=-5A

VG= - 10V

0 0.2 0.4 0.6 0.8 1 1.2 1.4

-V SD , Source-to-Drain Voltage (V)

-IS(A)

Tj=25 oCT j=150 oC

40.0

60.0

80.0

100.0

120.0

0 5 10 15 20

-I D , Drain Current (A)

RDS(ON) (mΩ)

VGS = -4.5V

VGS = -10V

AP4569GH

P-Channel

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

7/7

-4.5V

QGS QGD

Charge

0.0 4.0 8.0 12.0 16.0 20.0

QG , Total Gate Charge (nC)

-VGS , Gate to Source Voltage (V)

ID=-5A

VDS =-30V

100

1000

1 5 9 1317212529

-V DS , Drain-to-Source Voltage (V)

C (pF)

=1.0MH

Ciss

Coss

Crss

0.1

100

0.1 1 10 100

-V DS , Drain-to-Source Voltage (V)

-ID (A)

TC=25 oC

Single Pulse

1ms

10ms

100ms

0246

-V GS , Gate-to-Source Voltage (V)

-ID , Drain Current (A)

Tj=150 oCT j=25 oC

VDS =-5V

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

t , Pulse Width (s)

Normalized Thermal Response (Rthjc)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse