AP4569GH Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D1/D2 Good Thermal Performance Fast Switching Performance S1 RoHS Compliant G1 40V RDS(ON) 42m ID 10.5A P-CH BVDSS S2 G2 -40V RDS(ON) TO-252-4L Description 75m ID The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. -8A D1 D2 G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25 ID@TC=100 Units P-channel 40 -40 V 20 20 V Continuous Drain Current 3 10.5 -8 A Continuous Drain Current 3 6.6 -5 A 40 -40 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 8 Linear Derating Factor 0.06 W/ W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Value Units Max. 16 /W Max. 110 /W Parameter Thermal Resistance Junction-case 3 Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 200628062-1/7 AP4569GH o N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 40 - - V - 0.03 - V/ VGS=10V, ID=6A - - 42 m VGS=4.5V, ID=4A - - 60 m 0.8 - 2.5 V VDS=10V, ID=6A - 6 - S Drain-Source Leakage Current (Tj=25 C) VDS=40V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150oC) VDS=32V, VGS=0V - - 25 uA Gate-Source Leakage VGS=20V - - 100 nA ID=6A - 6 10 nC BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IGSS 2 VDS=VGS, ID=250uA o IDSS VGS=0V, ID=250uA 2 Max. Units Qg Total Gate Charge Qgs Gate-Source Charge VDS=30V - 1.2 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.2 - nC 2 td(on) Turn-on Delay Time VDS=20V - 3.7 - ns tr Rise Time ID=1A - 8.8 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 17.6 - ns tf Fall Time RD=20 - 3.6 - ns Ciss Input Capacitance VGS=0V - 330 530 pF Coss Output Capacitance VDS=25V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 55 - pF Rg Gate Resistance f=1.0MHz - 1.5 2.3 Min. Typ. IS=6A, VGS=0V - - 1.3 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=6A, VGS=0V - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 13 - nC 2/7 AP4569GH P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -40 - - V - -0.03 - V/ VGS=-10V, ID=-5A - - 75 m VGS=-4.5V, ID=-3A - - 100 m -0.8 - -2.5 V VDS=-10V, ID=-5A - 5 - S VDS=-40V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150 C) VDS=-32V, VGS=0V - - -25 uA Gate-Source Leakage VGS=20V - - 100 nA ID=-5A - 7.3 12 nC BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance Drain-Source Leakage Current (Tj=25 C) o IGSS 2 VDS=VGS, ID=-250uA o IDSS VGS=0V, ID=-250uA 2 Max. Units Qg Total Gate Charge Qgs Gate-Source Charge VDS=-30V - 1.3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 3.6 - nC VDS=-20V - 6.3 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-5A - 7.6 - ns td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 24 - ns tf Fall Time RD=4 - 6.8 - ns Ciss Input Capacitance VGS=0V - 460 740 pF Coss Output Capacitance VDS=-25V - 80 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Rg Gate Resistance f=1.0MHz - 5.6 8.4 Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-5A, VGS=0V - - -1.3 V trr Reverse Recovery Time IS=-5A, VGS=0V - 22 - ns Qrr Reverse Recovery Charge dI/dt=-100A/s - 14 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.N-CH , P-CH are same . 3/7 AP4569GH N-Channel 40 30 10V 7.0V 5.0V 4.5V ID , Drain Current (A) 30 20 V G =3.0V 10 0 20 V G =3.0V 10 0 0 2 4 6 8 0 2 4 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 2.0 I D =6A V G =10V I D =4A o Normalized RDS(ON) T C =25 C 60 RDS(ON0 (m) 10V 7.0V 5.0V 4.5V o T C = 150 C ID , Drain Current (A) o T C =25 C 40 20 1.6 1.2 0.8 2 4 6 8 10 25 50 75 100 125 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 80.0 10 8 T j =150 o C T j =25 o C RDS(ON) (m) 60.0 IS(A) 6 4 V GS =4.5V 40.0 V GS =10V 2 0 20.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 0 10 20 30 I D , Drain Current (A) Fig 6. On-Resistance vs. Drain Current 4/7 AP4569GH N-Channel f=1.0MHz 12 1000 VGS , Gate to Source Voltage (V) 10 C iss 8 C (pF) ID=6A V DS = 30 V 6 100 C oss C rss 4 2 10 0 0 4 8 12 1 16 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 ID (A) 10 1ms 1 10ms 100ms DC o T C =25 C Single Pulse Normalized Thermal Response (R thjc) 100 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.1 0.1 1 10 100 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 ID , Drain Current (A) V DS =5V VG 30 T j =25 o C QG T j =150 o C 4.5V QGS 20 QGD 10 Charge Q 0 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5/7 AP4569GH P-Channel 30 30 - 10V - 7.0V - 5.0V - 4.5V -ID , Drain Current (A) T C =25 C o T C = 150 C -ID , Drain Current (A) o 20 V G = - 3.0V 10 - 5.0V - 4.5V 20 10 V G = - 3.0V 0 0 0 2 4 6 8 0 10 2 -V DS , Drain-to-Source Voltage (V) 4 6 8 10 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 160 I D = -3 A I D = -5 A V G = - 10V Normalized RDS(ON) T C =25 o C RDS(ON) (m) - 10V - 7.0V 120 80 1.4 1.0 0.6 40 2 4 6 8 10 25 -V GS , Gate-to-Source Voltage (V) 50 75 100 125 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 120.0 10 8 RDS(ON) (m) -IS(A) 100.0 6 o o T j =150 C T j =25 C 4 V GS = -4.5V 80.0 V GS = -10V 60.0 2 0 40.0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 0 5 10 15 20 -I D , Drain Current (A) Fig 6. On-Resistance vs. Drain Current 6/7 AP4569GH P-Channel f=1.0MHz 12 1000 C iss -VGS , Gate to Source Voltage (V) 10 I D =-5A V DS =-30V C (pF) 8 6 100 C oss C rss 4 2 10 0 0.0 4.0 8.0 12.0 16.0 1 20.0 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 100 -ID (A) 10 1ms 1 10ms 100ms DC T C =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 0.1 1 10 100 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 20 V DS =-5V VG -ID , Drain Current (A) 15 T j =25 o C QG T j =150 o C -4.5V QGS 10 QGD 5 Charge Q 0 0 2 4 6 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7/7