New Product U(F,B)10BCT thru U(F,B)10DCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES * Oxide planar chip junction ITO-220AB * Ultrafast recovery time * Soft recovery characteristics * Low switching losses, high efficiency 2 3 1 1 U10xCT 2 * High forward surge capability 3 * High frequency operation UF10xCT PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) PIN 2 * Solder dip 260 C, 40 s (for TO-220AB, IT-220AB) TO-263AB * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC K TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. 2 1 UB10xCT PIN 1 PIN 2 K MECHANICAL DATA Case: TO-220AB, ITO-220AB and TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum HEATSINK PRIMARY CHARACTERISTICS IF(AV) 5Ax2 VRRM 100 V, 150 V, 200 V IFSM 55 A trr 25 ns VF 0.89 V TJ max. 150 C MAXIMUM RATINGS (TC = 25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage total device per diode SYMBOL U(F,B)10BCT U(F,B)10CCT U(F,B)10DCT UNIT VRRM 100 150 200 V IF(AV) 10 5 A IFSM 55 A Electrostatic discharge capacitor voltage, human body model: C = 150 pF, R = 1.5 k (contact mode) VC 8 kV Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min per diode VAC 1500 V TJ, TSTG - 55 to + 150 C Max. average forward rectified current (Fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range Document Number: 88967 Revision: 13-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product U(F,B)10BCT thru U(F,B)10DCT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 3.0 A IF = 5.0 A Maximum instantaneous forward voltage per diode (1) Maximum reverse current per diode (2) SYMBOL TJ = 25 C VF IF = 3.0 A IF = 5.0 A TJ = 150 C rated VR TJ = 25 C TJ = 100 C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Maximum reverse recovery time per diode MAX. 0.97 1.05 1.10 0.79 0.89 0.95 0.5 100 5.0 200 13 20 19.7 25 3 9 UNIT V A trr IF = 1.0 A, dI/dt = 100 A/s, VR = 30 V, Irr = 0.1 IRM IF = 2 A, dI/dt = 20 A/s, VR = 30 V, Irr = 0.1 IRM Maximum stored charge per diode IR TYP. Qrr ns nC Notes: (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL U10xCT UF10xCT UB10xCT UNIT RJA RJC 25 5.3 25 7.5 25 5.3 C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB U10DCT-E3/4W 1.87 4W 50/tube Tube ITO-220AB UF10DCT-E3/4W 1.77 4W 50/tube Tube TO-263AB UB10DCT-E3/4W 1.31 4W 50/tube Tube TO-263AB UB10DCT-E3/8W 1.31 8W 800/reel Tape and reel www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88967 Revision: 13-May-08 New Product U(F,B)10BCT thru U(F,B)10DCT Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 100 Resistive or Inductive Load U(B)10xCT Instantaneous Forward Current (A) Average Forward Rectified Current (A) 12 10 8 6 UF10xCT 4 2 25 50 75 100 125 150 1 0.5 0.9 1.3 1.7 2.1 Instantaneous Forward Voltage (V) Figure 1. Maximum Forward Current Derating Curve Figure 4. Typical Instantaneous Forward Characteristics Per Diode 10 000 Instantaneous Reverse Current (A) D = 0.8 D = 0.5 5 Average Power Loss (W) TJ = 25 C Case Temperature (C) 6 D = 0.3 D = 1.0 D = 0.2 4 D = 0.1 3 T 2 1 D = tp/T tp 4 5 0 TJ = 150 C 1000 TJ = 125 C 100 10 1 TJ = 25 C 0.1 0 1 2 3 6 10 20 30 40 50 60 70 80 90 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Figure 2. Forward Power Loss Characteristics Per Diode Figure 5. Typical Reverse Characteristics Per Diode 100 100 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p TJ = TJ max. 10 ms Single Half Sine-Wave Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 125 C 10 0.1 0.1 0 0 TJ = 150 C 10 1 1 10 100 10 1 0.1 1 10 100 Number of Cycles Reverse Voltage (V) Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Figure 6. Typical Junction Capacitance Per Diode Document Number: 88967 Revision: 13-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product U(F,B)10BCT thru U(F,B)10DCT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB ITO-220AB 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) PIN 2 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7 REF. 0.350 (8.89) 0.330 (8.38) 3 7 REF. 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.560 (14.22) 0.530 (13.46) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.671 (17.04) 0.651 (16.54) PIN 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 7 REF. 0.076 (1.93) REF. 45 REF. 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88967 Revision: 13-May-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000