CPH3430 Ordering number : ENN8175 N-Channel Silicon MOSFET CPH3430 General-Purpose Switching Device Applications Features * * * Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 Gate-to-Source Voltage VGSS 10 V 2 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation V PW10s, duty cycle1% 8 A Mounted on a ceramic board (900mm20.8mm) 1 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 Ratings min typ Unit max 60 V 1 A 10 A VGS(off) yfs VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A RDS(on)1 RDS(on)2 ID=1A, VGS=4V ID=1A, VGS=2.5V 170 220 m 190 270 m Input Capacitance Ciss 325 pF Output Capacitance Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 29 pF Reverse Transfer Capacitance Crss 21 pF Turn-ON Delay Time td(on) tr VDS=20V, f=1MHz See specified Test Circuit. 11 ns See specified Test Circuit. 17 ns Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time Fall Time td(off) tf 0.4 1.8 1.3 3.6 V S See specified Test Circuit. 40 ns See specified Test Circuit. 27 ns Marking : ZF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11205PE TS IM TA-100257 No.8175-1/4 CPH3430 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=30V, VGS=4V, ID=2A 4.2 nC Gate-to-Source Charge Qgs VDS=30V, VGS=4V, ID=2A 1.1 nC Gate-to-Drain "Miller" Charge Qgd VDS=30V, VGS=4V, ID=2A 1.1 Diode Forward Voltage VSD IS=2A, VGS=0 nC 0.86 Package Dimensions unit : mm 2152A 1.2 V Switching Time Test Circuit VDD=30V VIN 4V 0V 2.9 D 0.6 3 2.8 G 0.6 1.6 VOUT PW=10s D.C.1% 0.05 2 1 ID=1A RL=30 VIN 0.2 0.15 0.4 1.9 CPH3430 0.7 0.9 0.2 1 : Gate 2 : Source 3 : Drain P.G 50 S SANYO : CPH3 0.8 0.6 2.0 1.5 1.0 0.4 0.5 0.2 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 0 1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- m 400 300 200 100 0 2 4 6 1.0 8 Gate-to-Source Voltage, VGS -- V 10 IT06814 1.5 2.0 2.5 Gate-to-Source Voltage, VGS -- V 3.0 IT06813 RDS(on) -- Ta 400 Ta=25C ID=1.0A 0 0.5 IT06812 RDS(on) -- VGS 500 Static Drain-to-Source On-State Resistance, RDS(on) -- m 25C 5C 2.5 --25 C VGS=1.5V 3.0 Ta=2 5C 75C Drain Current, ID -- A 3.0 V 2.5 2.0 1.0 V V 1.2 Ta= -2 3.5 3.5 V V 5.0 1.4 6.0 Drain Current, ID -- A 1.6 VDS=10V V V 4.0 1.8 ID -- VGS 4.0 75C ID -- VDS 2.0 350 300 .5V 250 A, =1 ID 200 V =2 GS A, =1 ID 150 .0V =4 V GS 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- C 120 140 160 IT06815 No.8175-2/4 CPH3430 yfs -- ID 7 VGS=0 3 5 2 C 5 --2 = Ta 2 1.0 25 C C 75 7 5 3 1.0 7 5 Ta= 75 C 25 C --25 C 3 3 2 0.1 7 5 3 2 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0.01 0.2 5 0.4 0.8 1.0 1.2 IT06817 Ciss, Coss, Crss -- VDS 1000 VDD=30V VGS=4V 7 0.6 Diode Forward Voltage, VSD -- V IT06816 SW Time -- ID 100 f=1MHz 7 5 Ciss 5 td(off) Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns IF -- VSD 7 5 VDS=10V Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 10 3 tf 2 tr td(on) 10 3 2 100 7 5 Coss Crss 3 2 7 10 7 5 0.1 2 3 5 7 2 1.0 3 Drain Current, ID -- A 10 7 5 Drain Current, ID -- A ) C Operation in this area is limited by RDS(on). 0.1 7 5 25 IT06820 s 0 s Total Gate Charge, Qg -- nC 4.5 10 3 2 a= (T 4.0 s s 3.5 m on 3.0 10 0m 2.5 ID=2A ati 2.0 <10s IDP=8A 10 1.5 30 IT06819 er 1.0 25 ASO 1.0 7 5 3 2 0.5 20 op 1 15 DC 2 10 1m 3 2 3 0 5 Drain-to-Source Voltage, VDS -- V VDS=30V ID=2.0A 0 Ta=25C Single pulse Mounted on a ceramic board(900mm20.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7100 IT06821 PD -- Ta 1.2 Allowable Power Dissipation, PD -- W 0 VGS -- Qg 4 Gate-to-Source Voltage, VGS -- V 5 IT06818 1.0 M ou nt 0.8 ed on ac er am ic 0.6 bo ar d( 90 0.4 0m m2 0.8 m 0.2 m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT09129 No.8175-3/4 CPH3430 Note on usage : Since the CPH3430 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2005. Specifications and information herein are subject to change without notice. PS No.8175-4/4