Phototransistors PNA1801L (PN168) Silicon NPN Phototransistor Unit : mm For optical control systems 5.00.2 0.6 Features Not soldered 2.0 max. o3.80.2 o3.00.2 High sensitivity 15.01.0 4.50.3 Wide spectral sensitivity, suited for detecting GaAs LEDs Small size, high output power, low cost 2-0.8 max. 2-0.50.1 1.0 o 3 plastic package 2 0.50.1 1.7 (1.5) 1 2.54 Absolute Maximum Ratings (Ta = 25C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 30 V Emitter to collector voltage VECO 5 V Collector current IC 20 mA Collector power dissipation PC 100 mW Operating ambient temperature Topr -25 to +85 C Storage temperature Tstg -30 to +100 C 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25C) Parameter Symbol Dark current ICEO Collector photo current ICE(L) Conditions min VCE = 10V VCE = 10V, L = 500 lx*1 0.8 typ max Unit 0.005 0.5 A 3 mA Peak sensitivity wavelength P VCE = 10V 800 nm Acceptance half angle Measured from the optical axis to the half power point 35 deg. tr, tf*2 VCC = 10V, ICE(L) = 1mA, RL = 100 4 s Response time Collector saturation voltage VCE(sat) ICE(L) = 1mA, L = 1000 lx*1 0.2 0.5 V *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ;;;; ;; 50 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 Phototransistors PNA1801L PC -- Ta ICE(L) -- VCE 80 60 40 20 20 40 60 80 L = 2000 lx 1250 lx 1000 lx 8 750 lx 500 lx 4 250 lx 0 100 1750 lx 1500 lx Ambient temperature Ta (C ) 100 lx 0 4 8 ICE(L) (mA) Collector photo current 10 1 40 1 10 -1 10 -2 24 80 1 L = 1000 lx 500 lx 1 VCE = 10V Ta = 25C 80 60 40 0 40 80 0 200 120 400 600 800 1000 Ambient temperature Ta (C ) Ambient temperature Ta (C ) Wavelength (nm) Directivity characteristics tr -- ICE(L) tf -- ICE(L) 0 10 20 100 50 40 30 20 50 60 10 3 tf (s) 40 10 2 RL = 1k 10 500 10 2 RL = 1k 10 500 100 70 80 1200 Ta = 25C 10 4 10 3 tr (s) 60 30 Rise time 70 Ta = 25C 10 4 Relative sensitivity S (%) 90 80 10 4 20 10 -1 - 40 120 10 3 Spectral sensitivity characteristics 100 VCE = 10V T = 2856K 10 10 2 10 Illuminance L (lx) Fall time ICEO (nA) Dark current 10 2 0 20 10 ICE(L) -- Ta 10 2 VCE = 10V 10 -1 - 40 16 10 2 Collector to emitter voltage VCE (V) ICEO -- Ta 10 3 12 S (%) 0 16 12 VCE = 10V Ta = 25C T = 2856K 10 3 Relative sensitivity 0 - 20 Ta = 25C T = 2856K ICE(L) (mA) 100 ICE(L) -- L Collector photo current ICE(L) (mA) 20 Collector photo current Collector power dissipation PC (mW) 120 100 1 1 90 10 -1 10 -2 10 -1 1 10 10 2 Collector photo current ICE(L) (mA) 2 10 -1 10 -2 10 -1 1 10 10 2 Collector photo current ICE(L) (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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