Rev. 14/02/2018 subject to change without notice www.first-sensor.com contact@first-sensor.com Page 1/3
Schematic
First Sensor APD Hybrid Series Data Sheet
Part Description AD500-9-400M TO5
US Order # 05-051-01
International Order # 5000073
PIN CIRCLE
ACTIVE AREA: 0.196 mm
(500 µm DIAMETER)
PIN 2
PIN 1
5 PL
Ø 0.46
4.2 ±1
2
PIN 4
PIN 3
Ø5.08
V
BACKSIDE VIEW
113°
VIEWING
ANGLE
Ø6.60
Ø8.3
2.2
7.6 MIN
CHIP DIMENSIONS
PIN 5
CASE/ GND
5 PL
CC
Vout+
Vout-
+VBIAS
1.00 SQ
Ø9.2
Features
Description
Applications
0.500 mm active area
Low noise
High gain
Long term stability
The AD500-9-400M-TO5 is an Avalanche Photodiode Amplifier
Hybrid containing a 0.196 mm2 active area APD chip integrated
with an internal transimpedance amplifier. Hermetically
packaged in a TO-5 with a borosilicate glass window cap.
Lidar
Analytical instruments
Medical equipment
Absolute maximum ratings
Spectral response @ M = 100
Symbol
Parameter
Min
Max
Unit
TSTG
Storage Temp
-55
+125
C
TOP
Operating Temp
0
+60
C
TSOLDERING
Soldering Temp
-
+240
C
P
Power Dissipation
-
360
mW
Vcc
Single Supply Voltage
+3.0
+5.5
V
Icc
Supply Current
-
63
mA
Electro-optical characteristics @ 23 C (VCC = single supply +3.3V, RL = 100W unless otherwise specified)
Symbol
Characteristic
Test conditions
Min
Typ
Max
Unit
-3dB
Frequency Response
-3dB @ 905 nm
---
400
---
MHz
S
Sensitivity*
= 905 nm; M = 100
---
145
---
mV/µW
Icc
Supply Current
Dark state
---
34
63
mA
* Sensitivity = APD responsivity (0.58 A/W X 100 gain) x TIA gain (2.5K)
These devices are sensitive to electrostatic discharge. Please use ESD precautions when handling.
400 500 600 700 800 900 1000 1100
0
10
20
30
40
50
60
70
RESPONSIVITY (A/W)
WAVELENGTH (nm)
PIN 2
C1
C2
+V
PIN 3
BIAS
PIN 1
OUT+
OUT-
PIN 4
CASE/GND
PIN 5
CC (+5V)
V
AD500-9
Rev. 14/02/2018 subject to change without notice www.first-sensor.com contact@first-sensor.com Page 2/3
Avalanche photodiode data @ 23 C
Symbol
Characteristic
Test conditions
Min
Typ
Max
Unit
ID
Dark Current
M = 100 (see note 1)
---
0.8
5.0
nA
C
Capacitance
M = 100 (see note 1)
---
1.2
---
pF
VBR
Breakdown Voltage
ID = 2 µA
160
---
200
V
Temperature Coefficient of VBR
1.25
---
1.55
V/K
Responsivity
M = 100; = 0 V; = 905 nm
52
58
60
A/W
3dB
Bandwidth
-3dB
---
0.5
---
GHz
tr
Rise Time
M = 100
---
0.55
---
ns
Optimum Gain
50
60
---
“Excess Noise” factor
M = 100
---
2.5
---
“Excess Noise” index
M = 100
---
0.2
---
Noise Current
M = 100
---
1.0
---
pA/Hz1/2
Max Gain
200
---
---
NEP
Noise Equivalent Power
M = 100; = 905 nm
---
2.0 X 10-14
---
W/Hz1/2
Note 1: Measurement conditions: Setup of photo current 1 nA at M = 1 and irradiated by a 880 nm, 80 nm bandwidth LED. Increase the photo
current up to 100 nA, (M = 100) by internal multiplication due to an increasing bias voltage.
Transimpedance Amplifier data @ 25 C
(Vcc = +3.0 V to 5.5 V, TA = 0°C to 70°C, 100Ω load between OUT+ and OUT-. Typical values are at TA = 25°C, Vcc = +3.3 V)
Parameter
Test conditions
Min
Typ
Max
Units
Supply Voltage
3
5
5.5
V
Supply Current
---
34
63
mA
Transimpedance
Differential, measured with 40 µA p-p signal
2.10
2.75
3.40
k
Output impedance
Single ended per side
48
50
52
Maximum Differential Output Voltage
Input = 2 mA p-p with 100 differential termination
220
380
575
mV p-p
AC Input Overload
2
---
---
mA p-p
DC Input Overload
1
---
---
mA
Input Referred RMS Noise
TO-5 package, see note 3
---
490
668
nA
Input Referred Noise Density
See note 3
---
11
---
pA/Hz1/2
Small signal bandwidth
Source capacitance = 0.85 pF, see note 2
1.525
2.00
---
GHz
Low Frequency Cutoff
-3 dB, input < 20 µA DC
---
30
---
kHz
Transimpedance Linear Range
Peak to peak 0.95 < linearity < 1.05
40
---
---
µA p-p
Power Supply Rejection Ratio (PSRR)
Output referred, f < 2 MHz, PSSR = -20 Log (ΔVout / ΔVcc)
---
50
---
dB
Note 2: Source capacitance for AD500-9-400M-TO5 is the capacitance of APD.
Note 3: Input referred noise is calculated as RMS output noise/ (gain at f = 10 Mhz). Noise density is (input referred noise)/√bandwidth.
Transfer Characteristics
The circuit used is an avalanche photodiode directly coupled to a high speed data handling transimpedance amplifier. The output of the APD (light generated
current) is applied to the input of the amplifier. The amplifier output is in the form of a differential voltage pulsed signal.
The APD responsivity curve is provided in Fig. 2. The term Amps/Watt involves the area of the APD and can be expressed as Amps/mm2/Watts/mm2, where
the numerator applies to the current generated divided by the area of the detector, the denominator refers to the power of the radiant energy present per
unit area. As an example assume a radiant input of 1 microwatt at 905 nm. The APD’s corresponding responsivity is 0.58 A/W.
If energy in = 1 µW, then the current from the APD = (0.58 A/W) x (1x10-6W) = 0.58 µA. We can then factor in the typical gain of the APD
of 100, making the input current to the amplifier 58 µA. From Fig. 5 we can see the amplifier output will be approximately 100 mV p-p.
Application notes
The AD500-9-400M-TO5 is a high speed optical data receiver. It incorporates an internal transimpedance amplifier with an avalanche photodiode.
This detector requires +3.5 V to +5.0 V voltage supply for the amplifier and a high voltage supply (100-240 V) for the APD. The internal APD follows the gain
curve published for the AD500-9-TO52-S1 avalanche photodiode. The transimpedance amplifier provides differential output signals in the range of 200
millivolts differential.
In order to achieve highest gain, the avalanche photodiode needs a positive bias voltage (Fig. 1). However, a current limiting resistor must be placed in series
with the photodiode bias voltage to limit the current into the transimpedance amplifier. Failure to limit this current may result in permanent failure of the
device. The suggested initial value for this limiting resistor is 390 KOhm.
When using this receiver, good high frequency placement and routing techniques should be followed in order to achieve maximum frequency response. This
includes the use of bypass capacitors, short leads and careful attention to impedance matching. The large gain bandwidth values of this device also demand
that good shielding practices be used to avoid parasitic oscillations and reduce output noise.
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Fig. 1: APD gain vs bias voltage Fig. 2: APD Spectral response (M = 1)
140 150 160 170 180 190 200 210 220
1
10
100
1000
APPLIED VOLTAGE (V)
GAIN
WAVELENGTH (nm)
A/W
400
0.0 500 600 700 800 900 1000 1100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Fig. 3: Amplifier output vs temperature Fig. 4: APD Capacitance vs bias voltage
0
200
AMBIENT TEMPERATURE (°C)
AMPLITUDE (mV)
20 40 60 80
220
240
260
280
300
320
340
360
380
400
010 20 30 40 50 60 70 80
10
15
20
25
30
35
5
0
REVERSE BIAS (V)
CAPACITANCE (pF)
Fig. 5: Amplifier transfer function Fig. 6: Total frequency response
-100
-200
-100
-50
50
100
150
200
-75 0
-50 -25 25 50 75 100
INPUT CURRENT (µA)
DIFFERENTIAL OUTPUT VOLTAGE (mV p-p)
0
-150
50
55
60
65
70
1M 10M 100M 400M 1G
FREQUENCY (Hz)
TRANSIMPEDANCE (db)
Mouser Electronics
Authorized Distributor
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AD500-9-400M-TO5