AP4509AGM-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D2 D2 Low Gate Charge D1 D1 Fast Switching Performance RoHS Compliant & Halogen-Free SO-8 S1 S2 G1 G2 30V RDS(ON) 10m ID 11.2A P-CH BVDSS -30V RDS(ON) 21m ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. -8A D2 D1 The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Units P-channel 30 -30 V +20 +20 V 3 11.2 -8.0 A 3 9.0 -6.4 A 40 -30 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 2 W Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 62.5 /W 1 200912221 AP4509AGM-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 30 - - V VGS=10V, ID=10A - - 10 m VGS=4.5V, ID=7A - - 16 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=10A - 20 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=10A - 12 19.2 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=15V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 7.5 - nC VDS=15V - 9 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 6.5 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 23 - ns tf Fall Time RD=15 - 9.5 - ns Ciss Input Capacitance VGS=0V - 715 1140 pF Coss Output Capacitance VDS=25V - 220 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 160 - pF Rg Gate Resistance f=1.0MHz - 2.2 - Min. Typ. IS=1.7A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 27 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 18 - nC 2 AP4509AGM-HF P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. -30 - - V VGS=-10V, ID=-7A - - 21 m VGS=-4.5V, ID=-5A - - 32 m VGS=0V, ID=-250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-7A - 15 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=-7A - 15 24 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-15V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 8 - nC VDS=-15V - 10.5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 6.5 - ns td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 40 - ns tf Fall Time RD=15 - 29 - ns Ciss Input Capacitance VGS=0V - 1260 2000 pF Coss Output Capacitance VDS=-25V - 210 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 185 - pF Rg Gate Resistance f=1.0MHz - 5.6 - Min. Typ. IS=-1.7A, VGS=0V - - -1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-7A, VGS=0V, - 22 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 12 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 /W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP4509AGM-HF N-Channel 40 40 10V 7.0V 6.0V 5.0V 30 V G = 4.0V 20 10 30 V G =4.0V 20 10 0 0 0 1 2 3 4 0 1 V DS , Drain-to-Source Voltage (V) 2 3 4 5 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 16 1.8 I D =10A V G =10V I D = 7A o T A = 25 C Normalized R DS(ON) 14 RDS(ON0 (m) 10V 7.0V 6.0V 5.0V T A =150 ID , Drain Current (A) ID , Drain Current (A) T A =25 12 10 1.4 1.0 8 30 6 -30 0.6 2 4 6 8 10 -50 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 8 1.2 T j =25 o C T j =150 o C IS(A) Normalized VGS(th) (V) 6 4 1.0 0.8 2 0.6 0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP4509AGM-HF N-Channel f=1.0MHz 1000 I D = 10 A V DS = 15 V 8 800 C iss C (pF) VGS , Gate to Source Voltage (V) 10 6 600 4 400 2 200 C oss C rss 0 0 0 4 8 12 16 20 1 24 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 100us ID (A) 10 1ms 1 10ms 100ms 0.1 1s T A =25 o C Single Pulse DC 0.01 Normalized Thermal Response (R thja) Duty factor=0.5 Operation in this area limited by RDS(ON) 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t T Single Pulse 30 Duty factor = t/T Peak Tj = PDM x Rthja + Ta -30 Rthja=135 oC/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 5 AP4509AGM-HF P-Channel 40 40 30 V G = - 4.0V 20 10 30 V G = - 4.0V 20 10 0 0 0 1 2 3 4 0 1 -V DS , Drain-to-Source Voltage (V) 2 3 4 5 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 32 I D = -7 A V G = - 10V I D = -5 A T A =25 o C 1.4 Normalized R DS(ON) 28 RDS(ON) (m) -10V -7.0V -6.0V -5.0V T A = 150 o C -10V -7.0V -6.0V -5.0V -ID , Drain Current (A) -ID , Drain Current (A) T A =25 o C 24 20 1.2 1.0 0.8 16 30 -30 0.6 12 2 4 6 8 -50 10 -V GS , Gate-to-Source Voltage (V) 0 50 100 150 T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 8 Normalized -VGS(th) (V) 1.4 -IS(A) 6 4 T j =150 o C T j =25 o C 1.2 1.0 0.8 2 0.6 0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP4509AGM-HF P-Channel f=1.0MHz 10 2000 8 1600 C (pF) -VGS , Gate to Source Voltage (V) I D = -7A V DS = -15V 6 C iss 1200 4 800 2 400 C oss C rss 0 0 0.0 8.0 16.0 24.0 32.0 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 10 100us -ID (A) 1ms 1 10ms 100ms 0.1 1s T A =25 o C Single Pulse DC 0.01 Normalized Thermal Response (R thja) Duty factor=0.5 Operation in this area limited by RDS(ON) 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T 30 Duty factor = t/T Peak Tj = PDM x Rthja + Ta -30 Rthja=135 oC/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 90% 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 7