Three Phase Rectifier Bridges PSD 112 IdAVM = 127 A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 112/08 PSD 112/12 PSD 112/14 PSD 112/16 PSD 112/18 Symbol Test Conditions IdAVM IFSM T C = 100C, module i2 dt T VJ T VJM T stg VISOL Md W eight Maximum Ratings 127 A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 900 1050 A A T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 780 930 A A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 4050 4600 A2 s A2 s T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 3050 3600 A2 s A2 s -40 ... + 150 150 -40 ... + 150 C C C 2500 3000 V V 5 5 270 Nm Nm g 50/60 HZ, RMS IISOL 1 mA t = 1 min t=1s Mounting torque Terminal connection torque typ. (M6) (M6) Features * Package with screw terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL applied Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Package, style and outline Dimensions in mm (1mm = 0.0394") Symbol Test Conditions IR VR = VRRM VR = VRRM T VJ = 25C T VJ = T VJM Characteristic Value VF VTO rT RthJC IF = 150 A T VJ = 25C 0.3 5.0 mA mA 1.7 V 0.8 5 V m per Diode; DC current per module 0.9 0.15 K/W K/W RthJK per Diode; DC current per module 1.08 0.18 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 10.0 9.4 50 mm mm m/s2 For power-loss calculations only T VJ = T VJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach, Germany Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 POWERSEM reserves the right to change limits, test conditions and dimensions www.powersem.net PSD 112 300 10 I F(OV) -----I FSM IFSM (A) TVJ=45C TVJ=150C [A] 250 1.6 200 900 4 2 As 780 1.4 1.2 150 TVJ=45C 1 100 0 V RRM TVJ = 150C TVJ=150C 0.8 1/2 V RRM 50 TVJ = 25C IF 0.6 1 V RRM 10 0 0.5 1 1.5 VF [V] 0.4 2 0 1 10 Fig. 1 Forward current versus voltage drop per diode 10 2 3 1 2 3 t[ms] 10 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 4 t [ms] 6 10 Fig. 3 i2dt versus time (1-10ms) per diode 85 400 [W] PSD 112 350 TC 90 0.15 0.09 = RTHCA [K/W] 0.22 100 300 120 DC sin.180 rec.120 rec.60 rec.30 95 [A] 100 105 250 110 0.34 80 115 200 120 0.59 150 DC sin.180 rec.120 rec.60 rec.30 100 50 PVTOT 0 130 135 1.34 IFAVM 50 100 [A] Tamb 100 [K] 145 0 150 Fig. 4 Power dissipation versus direct output current and ambient temperature K/W Z thJK 1.2 Z thJC 1 0.8 0.6 0.4 0.2 Zth 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode 20 IdAV 150 50 40 140 C 0 60 125 50 100 150 200 TC(C) Fig.5 Maximum forward current at case temperature