Data Sheet 1 of 9 Rev. 03, 2009-11-11
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFA071701E
PTFA071701F
Confidential, Limited Internal Distribution
Description
The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs
designed for use in cellular power amplifiers in the 725 to 770 MHz
frequency band. Features include internal I/O matching, and
thermally-enhanced, ceramic open-cavity packages. Manufactured
with Infineon's advanced LDMOS process, these devices provide
excellent thermal performance and superior reliability.
PTFA071701E*
Package H-36248-2
Thermally-Enhanced High Power RF LDMOS FETs
170 W, 725 – 770 MHz
Two-tone Drive-up
VDD = 30 V, IDQ = 900 mA,
ƒ = 765 MHz, tone spacing = 1 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
44 46 48 50 52 54
Output Power, PEP (dBm)
15
20
25
30
35
40
45
50
55
60
Drain Efficiency (%)
IM5
Efficiency
IM7
Intermodulation Distortion (dBc)
IM3
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.0 A, POUT = 40 W average,
ƒ1 = 760, ƒ2 = 770 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB at 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps —18.5 —dB
Drain Efficiency ηD—32 —%
Adjacent Channel Power Ratio ACPR —–36 —dBc
PTFA071701F*
Package H-37248-2
*See Infineon distributor for future availability.
Features
•Thermally-enhanced packages, Pb-free and
RoHS-compliant
•Broadband internal matching
•Typical CDMA2000 performance at 770 MHz, 30 V
- Average output power = 35 W
- Linear Gain = 18 dB
- Efficiency = 34%
- Adjacent channel power = –50 dBc
•Typical CW performance, 770 MHz, 30 V
- Output power at P–1dB = 165 W
- Efficiency = 62%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 10:1 VSWR @ 30 V,
170 W (CW) output power
Data Sheet 2 of 9 Rev. 03, 2009-11-11
PTFA071701E
PTFA071701F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 0.9 A, POUT = 150 W PEP, ƒ = 765 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 18.0 18.7 —dB
Drain Efficiency ηD44 46 —%
Intermodulation Distortion IMD —–29.5 –28 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 30 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.07 —Ω
Operating Gate Voltage VDS = 30 V, IDQ = 1.0 A VGS 2.0 2.48 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 170 W CW) RθJC 0.38 °C/W
Ordering Information
Type and Version Package Type Package Description Shipping
PTFA071701E V4 H-36248-2 Slotted flange, single-ended Tray
PTFA071701E V4 R250 H-36248-2 Slotted flange, single-ended Tape & Reel 250 pcs
PTFA071701F V4 H-37248-2 Earless flange, single-ended Tray
PTFA071701F V4 R250 H-37248-2 Earless flange, single-ended Tape & Reel 250 pcs
*See Infineon distributor for future availability.
Data Sheet 3 of 9 Rev. 03, 2009-11-11
PTFA071701E
PTFA071701F
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 0.9 A, ƒ = 770 MHz
15
16
17
18
19
20
21
30 35 40 45 50 55
Output Power (dBm)
Gain (dB)
5
15
25
35
45
55
65
Drain Efficiency (%)
Efficiency
Gain
Broadband Performance
VDD = 30 V, IDQ = 900 mA, POUT = 75 W
15
20
25
30
35
40
45
50
700 730 760 790
Frequency (MHz)
Gain (dB), Efficiency (%)
-35
-30
-25
-20
-15
-10
-5
0
Input Return Loss (dB)
Gain
Efficiency
Return Loss
CW Performance at Selected Voltages
IDQ = 0.9 A, ƒ = 770 MHz
36
40
44
48
52
56
60
64
48 49 50 51 52 53
Output Power (dBm)
Drain Efficiency (%)
14
15
16
17
18
19
20
21
Gain (dB)
Efficiency
Gain
VDD = 32 V
VDD = 30 V
VDD = 28 V
Power Sweep
VDD = 30 V, ƒ = 770 MHz
15
16
17
18
19
20
21
30 35 40 45 50 55
Output Power (dBm)
Power Gain (dB)
IDQ
= 0.9 A
IDQ
= 0.7 A
IDQ
= 1.3 A
IDQ
= 1.1 A
Data Sheet 4 of 9 Rev. 03, 2009-11-11
PTFA071701E
PTFA071701F
Confidential, Limited Internal Distribution
2-Carrier WCDMA Performance
VDD = 30 V, IDQ = 1.0 A, ƒ = 765 MHz
0
10
20
30
40
50
60
70
32 34 36 38 40 42 44 46 48
Output Power (dBm)
Drain Efficiency (%)
-60
-55
-50
-45
-40
-35
-30
-25
ACPR (dBc)
TCASE = 25°C
TCASE = 90°C
Efficiency
IM3
ACPR
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 020 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
1.556 A
3.1 A
6.22 A
7.76 A
9.32 A
10.88 A
12.44 A
14 A
Z Source Z Load
G
S
D
Broadband Circuit Impedance
0.1
0.2
0.1
0.1
0
.2
-
W
AV
E
LE
N
GT
H
S T
O
W
A
R
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
Z Load
Z Source
770 MHz
725 MHz
Z0 = 50 Ω
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
725 2.690 –3.730 2.070 –1.27
736 2.680 –3.470 2.020 –1.08
748 2.700 –3.240 1.980 –0.84
759 2.720 –3.050 1.930 –0.64
770 2.690 –2.890 1.900 –0.46
Typical Performance (cont.)
Data Sheet 5 of 9 Rev. 03, 2009-11-11
PTFA071701E
PTFA071701F
Confidential, Limited Internal Distribution
Reference circuit schematic for ƒ = 770 MHz
Reference Circuit
Circuit Assembly Information
DUT PTFA071701E or PTFA071701F LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 3.48 Rogers RO4350 1 oz. copper
Microstrip Electrical Characteristics at 770 MHz Dimensions: L x W ( mm) Dimensions: L x W (in.)
l10.025 λ, 50.7 Ω5.84 x 1.65 0.230 x 0.065
l20.053 λ, 38.4 Ω12.32 x 2.54 0.485 x 0.100
l30.035 λ, 38.4 Ω8.00 x 2.54 0.315 x 0.100
l40.148 λ, 76.7 Ω35.94 x 0.76 1.415 x 0.030
l50.094 λ, 7.8 Ω20.32 x 17.78 0.800 x 0.700
l6, l70.103 λ, 44.5 Ω24.13 x 2.03 0.950 x 0.080
l80.139 λ, 8.4 Ω29.97 x 16.51 1.180 x 0.650
l9 (taper) 0.062 λ, 8.4 Ω / 33.8 Ω13.46 x 16.51 / 3.05 0.530 x 0.650 / 0.120
l10 (taper) 0.002 λ, 33.8 Ω / 38.4 Ω0.51 x 3.05 / 2.54 0.020 x 0.120 / 0.100
l11 0.005 λ, 38.4 Ω1.27 x 2.54 0.050 x 0.100
l12 0.016 λ, 50.7 Ω3.76 x 1.65 0.148 x 0.065
R3
2K V
C3
0.001µF
C2
0.001µF
Q1
BCP56
R2
1.3K V
QQ1
LM7805
0.001µF
VDD
R6
5.1K V
R4
2K V
R1
1.2K V
C9
62pF
l1
R9
10 V
DUT
J1
l4
C5
10µF
35V
C4
0.1µF
C7
0.1µF
R8
5.1K V
R7
10 V
C10
3.9pF
C11
6.2pF
l2l3l5J2
L1
L2
l6
l7
l8l11 l12
l9l10
VDD
R5
2K V
C8
62pF
C6
4.7µF
C16
10µF
50V
C15
0.1µF
C14
10µF
50V
C13
2.2µF
C12
62pF
C21
10µF
50V
C20
0.1µF
C19
10µF
50V
C18
2.2µF
C17
62pF
C23
3.3pF
C22
3.3pF
C24
62pF
Data Sheet 6 of 9 Rev. 03, 2009-11-11
PTFA071701E
PTFA071701F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
RF_IN RF_OUT
a071701 ghl -v1_cd _4-15 -09
C5
R8
C9
R6
R7
C6C7
C13
C12
C8
C11
C18C17
C14 C15
C16
C24
C20
C21
C23
C10
R9
C2
R5
R3
R4
R1C1
C3
C22
C4
L2
L1
C19
Q1
QQ1
R2
Reference circuit assembly diagram* (not to scale)
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4, C7, C15, C20 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C6 Capacitor, 4.7 µF, 16 VDigi-Key PCS3475CT-ND
C5 Tantalum capacitor, 10 µF, 35 V Digi-Key 399-1655-2-ND
C8, C9, C12, C17, C24 Ceramic capacitor, 62 pF ATC 100B 620
C10 Ceramic capacitor, 3.9 pF ATC 100B 3R9
C11 Ceramic capacitor, 6.2 pF ATC 100B 7R5
C13, C18 Capacitor, 2.2 µF ATC 920C 202
C14, C16, C19, C21 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400
C22, C23 Ceramic capacitor, 3.3 pF ATC 100B 3R3
L1, L2 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor, 1.2k ΩDigi-Key P1.2KGCT-ND
R2 Chip resistor, 1.3k ΩDigi-Key P1.3KGCT-ND
R3, R5 Chip resistor, 2k ΩDigi-Key P2KECT-ND
R4 Potentiometer, 2k ΩDigi-Key 3224W-202ETR-ND
R6, R8 Chip resistor, 5.1k ΩDigi-Key P5.1KECT-ND
R7, R9 Chip resistor, 10 ΩDigi-Key P10ECT-ND
*Gerber files for this circuit available on request
Data Sheet 7 of 9 Rev. 03, 2009-11-11
PTFA071701E
PTFA071701F
Confidential, Limited Internal Distribution
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [0.005] unless specified otherwise.
4. Pins: D = drain; S = source; G = gate.
5. Lead thickness: 0.102 +0.051/–0.025 [0.004 +0.002/–0.001].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max.
Package Outline Specifications
Package H-36248-2
34.036
[1.340]
1.016
[.040]
2X 12.700
[.500]
27.940
[1.100]
L
C
D
G
S
C
L
FLANGE 9.779
[.385]
0.0381 [.0015] -A-
4X R1.524
[R.060]
2X R1.626
[R.064]
4.826±0.510
[.190±0.020]
45° X 2.720
[45° X .107]
19.431±0.510
[.765±0.020]
LID 9.398
+0.100
-0.150
[.370
+0.004
-0.006 ]
19.812±0.200
[.780±0.008]
3.632±0.380
SPH 1.575
[.062]
C66065-A2322-C001-01-0027_h-36248-2_11-11-09
C
L
Data Sheet 8 of 9 Rev. 03, 2009-11-11
PTFA071701E
PTFA071701F
Confidential, Limited Internal Distribution
S
1.016
[.040]
0.0381 [.0015] -A-
D
G
FLANGE 9.779
[.385]
SPH 1.575
[.062]
2X 12.700
[.500]
4X R0.508+.381
-.127
[R.020
+0.015
-0.005 ]
4.826±0.510
[.190±0.020]
LID 9.398+0.100
-0.150
[.370+0.004
-0.006 ]19.431±0.510
[.765±0.020]
19.812±0.200
[.780±0.008]
20.574
[.810]
3.632±0.380
[.143±0.015]
[45° X .107]
C66065-A2323-C001-01-0027_h-37248-2_11-11-09
L
C
Package Outline Specifications (cont.)
Package H-37248-2
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [0.005] unless specified otherwise.
4. Pins: D = drain; S = source; G = gate.
5. Lead thickness: 0.102 +0.051/–0.025 [0.004 +0.002/–0.001].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet 9 of 9 Rev. 03, 2009-11-11
PTFA071701E/F V4
Confidential, Limited Internal Distribution
Revision History: 2009-11-11 Data Sheet
Previous Version: 2009-09-09, Preliminary Data Sheet
Page Subjects (major changes since last revision)
All Data Sheet now relects released-product specifications
2Updated maximun ratings
7,8 Updated package outline
Edition 2009-11-11
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
