HAL855UT-A - Micronas - Product.Network

HAL

85x

Programmable Linear

Hall-Effect Sensor

Edition March 8, 2004

6251-604-1AI

ADVANCE INFORMATION

MICRONAS

2March 8, 2004; 6251-604-1AI Micronas

Contents

Page Section Title

HAL85x ADVANCE INFORMATION

3 1. Introduction

3 1.1. Major Applications

31.2.Features

4 1.3. Marking Code

4 1.3.1. Special Marking of Prototype Parts

4 1.4. Operating Junction Temperature Range (TJ)

4 1.5. Hall Sensor Package Codes

4 1.6. Solderability

4 1.7. Pin Connections and Short Descriptions

5 2. Functional Description

5 2.1. General Function

7 2.2. Digital Signal Processing and EEPROM

10 2.2.1. Two Additional Registers for HAL856

10 2.3. Calibration Procedure

10 2.3.1. General Procedure

12 2.3.2. Calibration of the Angle Sensor

14 3. Specifications

14 3.1. Outline Dimensions

18 3.2. Dimensions of Sensitive Area

18 3.3. Position of Sensitive Areas

18 3.4. Absolute Maximum Ratings

19 3.4.1. Storage and Shelf Life

19 3.5. Recommended Operating Conditions

20 3.6. Characteristics

21 3.7. Magnetic Characteristics

21 3.8. Diagnosis Functions

22 4. Application Notes

22 4.1. Application Circuit

22 4.2. Use of Two HAL855 in Parallel

23 4.3. Measurement of a PWM Output Signal

23 4.4. Measurement of a Split PWM Output Signal

23 4.5. Measurement of a Biphase-M Output Signal

23 4.6. Temperature Compensation

24 4.7. Ambient Temperature

24 4.8. EMC and ESD

25 5. Programming of the Sensor

25 5.1. Definition of Programming Pulses

25 5.2. Definition of the Telegram

29 5.3. Telegram Codes

30 5.4. Number Formats

31 5.5. Register Information

31 5.6. Programming Information

32 6. Data Sheet History

ADVANCE INFORMATION HAL85x

Micronas March 8, 2004; 6251-604-1AI 3

Programmable Linear Hall Effect Sensor

1. Introduction

The HAL85x is a new member of the Micronas family

of programmable linear Hall sensors. As an extension

to the HAL8x5 family, the HAL85x offers an arbitrary

output characteristic, as well as a 2-wire output for

HAL856 and individual programming of different sen-

sors which are in parallel to the same supply voltage.

The HAL85x is an universal magnetic field sensor with

an arbitrary output based on the Hall effect. The IC is

designed and produced in sub-micron CMOS technol-

ogy and can be used for angle or distance measure-

ments if combined with a rotating or moving magnet.

The major characteristics like magnetic field range,

output characteristic, output format, sensitivity, shift

(duty cycle of the PWM output signal or the serial out-

put word at zero magnetic field), PWM period, low and

high current, and the temperature coefficients are pro-

grammable in a non-volatile memory. The output char-

acteristic can be set with 32 setpoints with a resolution

of 9 bit.

The HAL85x features a temperature-compensated

Hall plate with choppered offset compensation, an A/D

converter, digital signal processing, an EEPROM

memory with redundancy and lock function for the cali-

bration data, a serial interface for programming the

EEPROM, and protection devices at all pins. The inter-

nal digital signal processing is of great benefit because

analog offsets, temperature shifts, and mechanical

stress do not degrade the sensor accuracy.

The HAL85x is programmable by modulating the sup-

ply voltage. No additional programming pin is needed.

The easy programmability allows a 2-point calibration

by adjusting the output voltage directly to the input sig-

nal (like mechanical angle, distance, or current). Indi-

vidual adjustment of each sensor during the cus-

tomer’s manufacturing process is possible. With this

calibration procedure, the tolerances of the sensor, the

magnet, and the mechanical positioning can be com-

pensated in the final assembly. This offers a low-cost

alternative for all applications that presently need

mechanical adjustment or laser trimming for calibrating

the system.

In addition, the temperature compensation of the Hall

IC can be fit to all common magnetic materials by pro-

gramming first and second order temperature coeffi-

cients of the Hall sensor sensitivity. This enables oper-

ation over the full temperature range with high

accuracy.

The calculation of the individual sensor characteristics

and the programming of the EEPROM memory can

easily be done with a PC and the application kit from

Micronas.

The sensors were designed to translate a linear mag-

netic field into an arbitrary output signal with positive

slope or a non-linear magnetic field into a linear out-

put signal. They can be used in automotive or indus-

trial applications. Both sensors operate in a wide sup-

ply voltage range and with ambient temperatures

from −40 °C up to 150 °C. The HAL85x is available in

the very small leaded package TO92UT-1 and

TO92UT-2.

1.1. Major Applications

Due to the sensor’s versatile programming characteris-

tics, the HAL85x is the optimal system solution for

applications such as:

– contactless potentiometers,

– Rotary position measurement (e.g. Pedal sensor),

– Fluid level measurement,

– Linear position detection,

– Magnetic field detection.

WARNING:

DO NOT USE THESE SENSORS IN LIFE-

SUPPORTING SYSTEMS, AVIATION, AND

AEROSPACE APPLICATIONS.

1.2. Features

– High-precision linear Hall effect sensors with differ-

ent output formats

– Various programmable magnetic characteristics with

non-volatile memory

– Programmable output characteristic

(32 setpoints with 9-bit resolution)

– Programmable output formats

(PWM or serial Biphase-M)

– Programmable PWM Period

– Open-drain output for HAL855

– Programmable output current source for HAL856

(low and high current)

– Digital signal processing

– Temperature characteristics programmable for

matching all common magnetic materials

– Programming by modulation of the supply voltage

– Lock function and built-in redundancy for EEPROM

memory

– Operates from –40 °C up to 150 °C ambient temper-

ature

HAL85x ADVANCE INFORMATION

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– Operates from 4.5 V up to 18 V supply voltage

– Operates with static magnetic fields and dynamic

magnetic fields up to 2 kHz

– Choppered offset compensation

– Over-voltage protection on all pins

– Reverse-voltage protection on VDD pins

– Magnetic characteristics extremely robust against

mechanical stress

– Short-circuit protected output

– EMC-optimized design

1.3. Marking Code

The HAL85x has a marking on the package surface

(branded side). This marking includes the name of the

sensor and the temperature range.

1.3.1. Special Marking of Prototype Parts

Prototype parts are coded with an underscore beneath

the temperature range letter on each IC. They may be

used for lab experiments and design-ins but are not

intended to be used for qualification tests or as produc-

tion parts.

1.4. Operating Junction Temperature Range (TJ)

The Hall sensors from Micronas are specified to the

chip temperature (junction temperature TJ).

A: TJ = −40 °C to +170 °C

K: TJ = −40 °C to +140 °C

The relationship between ambient temperature (TA)

and junction temperature is explained in Section 4.7.

on page 24.

1.5. Hall Sensor Package Codes

Example: HAL855UT-K

→Type: 855

→Package: TO92UT

→Temperature Range: TJ = −40°C to +140°C

Hall sensors are available in a wide variety of packag-

ing versions and quantities. For more detailed informa-

tion, please refer to the brochure: “Micronas Hall Sen-

sors: Ordering Codes, Packaging, Handling”.

1.6. Solderability

Package TO92UT-1/-2: according to IEC68-2-58

During soldering reflow processing and manual

reworking, a component body temperature of 260 °C

should not be exceeded.

Solderability is guaranteed for one year from the date

code on the package. Solderability has been tested

after storing the devices for 16 hours at 155 °C. The

wettability was more than 95%.

1.7. Pin Connections and Short Descriptions

Fig. 1–1: Pin configuration

Type Temperature Range

A K

HAL855 855A 855K

HAL856 856A 856K

No. Pin Name Type Short Description

DD IN Supply Voltage and

Programming Pin

2 GND Ground

3 OUT OUT Open-drain Output

and Selection Pin

(ONLY HAL855)

HALXXXPA-T

Temperature Range: A and K

Package: UT for TO92UT-1/-2

Type: 855

1VDD

2GND

3OUT

1VDD

2GND

3NC

HAL856HAL855

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2. Functional Description

2.1. General Function

The HAL85x is a monolithic integrated circuit which

provides an output voltage proportional to the mag-

netic flux through the Hall plate.

The external magnetic field component perpendicular

to the branded side of the package generates a Hall

voltage. The Hall IC is sensitive to magnetic north and

south polarity. This voltage is converted to a digital

value, processed in the Digital Signal Processing Unit

(DSP) according to the settings of the EEPROM regis-

ters, converted to the different digital output formats

(PWM, Split PWM, Biphase-M serial protocol) and pro-

vided by an open-drain output transistor stage. The

function and the parameters for the DSP are explained

in Section 2.2. on page 7.

The setting of the LOCK register disables the program-

ming of the EEPROM memory for all time. This regis-

ter cannot be reset.

As long as the LOCK register is not set, the output

characteristic can be adjusted by programming the

EEPROM registers. The IC is addressed by modulat-

ing the supply voltage (see Fig. 2–1). In the specified

supply voltage range, the sensor generates the differ-

ent digital output formats, except Biphase-M protocol.

This protocol is only generated after locking the sen-

sor. After detecting a command, the sensor reads or

writes the memory and answers with a digital signal on

the output pin, or in case of HAL856, with a modulation

of the sensor’s current consumption. The output is

switched off during the communication.

In case of HAL855, it is possible to program several

sensors individually if they are in parallel to the same

supply and ground line. The selection of each sensor

is done via its output pin.

Internal temperature compensation circuitry and the

choppered offset compensation enables operation

over the full temperature range with minimal changes

in accuracy and high offset stability. The circuitry also

rejects offset shifts due to mechanical stress from the

package. The non-volatile memory consists of redun-

dant EEPROM cells. In addition, the sensor IC is

equipped with devices for over voltage and reverse-

voltage protection at all pins.

Fig. 2–1: Programming with VDD modulation

Fig. 2–2: HAL85x block diagram

HAL855: VDD

VDD (V)

HAL

85x

VDD GND

OUT analogdigital

HAL856: IDD

Bandgap Temperature

Oscillator

Switched Digital HAL855:

Open-Drain Output OUT

VDD

GND

Supply

Dependent

Bias

Hall Plate Signal

Processing

Level

Detection

A/D

Converter

Reference

EEPROM Memory

Lock

Control

HAL856:

Current Output

HAL85x ADVANCE INFORMATION

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Fig. 2–3: Details of EEPROM and Digital Signal Processing

Mode Register

Filter

6 bit

TCSQ

5 bit

Slope

14 bit

Shift

10 bit

Setpoints

32 x 9 bit 1 bit

Micronas

Customer

Settings

3 bit

Range

3 bit

Lock

EEPROM Memory

A/D

Converter

Digital

Filter

Multiplier Adder Get Output

Conditioning

Digital Signal Processing

Digital Output Register

14 bit

Lock

Control

Interpolate

between

Limits

Find

Interval Limits

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2.2. Digital Signal Processing and EEPROM

The DSP is the major part of this sensor and performs

the signal conditioning. The parameters for the DSP

are stored in the EEPROM registers. The details are

shown in Fig. 2–3.

Terminology:

SLOPE: name of the register or register value

Slope: name of the parameter

The EEPROM registers consist of three groups:

Group 1 contains the registers for the adaption of the

sensor to the magnetic system: MODE for selecting

the magnetic field range and filter frequency, TC and

TCSQ for the temperature characteristics of the mag-

netic sensitivity.

Group 2 contains the registers for defining the output

characteristics: SLOPE, SHIFT, OUTPUT FORMAT,

OUTPUT PERIOD (BITTIME), and OUTPUT CHAR-

ACTERISTIC. For HAL856, two additional registers

are available: LOW CURRENT and HIGH CURRENT.

The output characteristic of the sensor is defined by

these 5 (7) parameters.

– The parameter Shift corresponds to the output sig-

nal at B = 0 mT.

– The parameter Slope defines the magnetic sensitiv-

ity

The shape of the output signal is determined by the

Output Characteristic, which, in turn, is defined by the

32 setpoints of the sensor. A value for each of the set-

points must be defined. The setpoints are distributed

evenly along the magnetic field axis allowing linear

interpolation between the 32 setpoints (see Fig. 2–4).

Group 3 contains the PARTNUMBER, the Micronas

registers, and LOCK for the locking of all registers. The

PARTNUMBER register is only available in Biphase-M

output mode. The sensor transmits a partnumber via

its output for the first three serial sequences after

power-up. The Micronas registers are programmed

and locked during production and are read-only for the

customer. These registers are used for oscillator fre-

quency trimming and several other special settings.

An external magnetic field generates a Hall voltage on

the Hall plate. The A/D-converter converts the ampli-

fied positive or negative Hall voltage (operates with

magnetic north and south poles at the branded side of

the package) to a digital value. The digital signal is fil-

tered in the internal low-pass filter and manipulated

according to the settings stored in the EEPROM. The

digital value after signal processing is readable in the

DIGITAL OUTPUT register. Depending on the pro-

grammable magnetic range of the Hall IC, the operat-

ing range of the A/D converter is from −30 mT...

+30 mT up to −150 mT... +150 mT.

During further processing, the digital signal is calcu-

lated based on the values of slope, shift, and the

defined output characteristic. The result is converted to

the different digital output formats (PWM, Split PWM

and Biphase-M) and stabilized by a open-drain output

transistor stage (or current source in case of HAL856).

The DIGITAL OUTPUT value at any given magnetic

field depends on the settings of the magnetic field

range, the low-pass filter, TC, TCSQ values and the

programmed Output Characteristic. The DIGITAL

OUTPUT range is min. 0 to max. 4095.

Note: During application design, it should be taken

into consideration that DIGITAL OUTPUT

should not saturate in the operational range of

the specific application.

Setpoint

PWM

HAL85x

0 4 8 121620242832

100

Logarithmic

Sine

Linear

Logarithmic

Sine

Linear

Fig. 2–4: Example for different output

characteristics

HAL85x ADVANCE INFORMATION

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MODE

The MODE register consists of four “sub”-registers

defining the magnetic and output behavior of the sen-

sor. The RANGE bits are the three lowest bits of the

MODE register; they define the magnetic field range of

the A/D converter. The next three bits (FILTER) define

the −3 dB frequency of the digital low pass filter. The

next sub-register is the FORMAT register, and it

defines the different output formats as described

below. This sub-register also consists of 3 bits. The

last three MSBs define the OUTPUT PERIOD of the

PWM signal.

RANGE

FILTER

OUTPUT FORMAT

The HAL85x provides three different output formats: a

PWM, Split PWM, and Biphase-M output. PMW output

is a pulse width modulated output. The signal is

defined by the ration of high and low phase. The Split

PWM signal is a special version of a PWM signal. The

resolution of a normal PWM signal is limited by its fre-

quency. To enable the sensor to transfer the output sig-

nal with always constant resolution, the output signal is

split into MSBs and LSBs. Please contact Micronas for

more detailed information. The Biphase-M output is a

serial protocol. A logical “0” is coded as no output level

change within the bit time. A logical “1” is coded as an

output level change between 50% and 80% of the bit

time. After each bit, an output level change occurs

(see Fig. 5–1 on page 25).

OUTPUT PERIOD

The OUTPUT PERIOD register defines the PWM-

Period of the output signal.

Table 2–1: RANGE register definition

Magnetic Field Range BIT SETTING

−30 mT...30 mT 0

−40 mT...40 mT 4

−60 mT...60 mT 5

−75 mT...75 mT 1

−80 mT...80 mT 6

−90 mT...90 mT 2

−100 mT...100 mT 7

−150 mT...150 mT 3

Table 2–2: FILTER register definition

−3 dB Frequency BIT SETTING

80 Hz 0

160 Hz 1

500 Hz 2

1 kHz 3

2 kHz 4

Table 2–3: OUTPUT FORMAT register definition

Output Format BIT SETTING

PWM 2

Split PWM 3

Biphase-M 4

Table 2–4: OUTPUT PERIOD register definition

Magnetic Field Range BIT SETTING

128 ms; 12-bit resolution 0

64 ms; 12-bit resolution 1

32 ms; 12-bit resolution 2

16 ms; 12-bit resolution 3

8 ms; 12-bit resolution 4

4 ms; 11-bit resolution 5

2 ms; 10-bit resolution 6

1 ms; 9-bit resolution 7

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TC and TCSQ

The temperature dependence of the magnetic sensitiv-

ity can be adapted to different magnetic materials in

order to compensate for the change of the magnetic

strength with temperature. The adaption is done by

programming the TC (Linear Temperature Coefficient)

and the TCSQ registers (Quadratic Temperature Coef-

ficient). Thereby, the slope and the curvature of the

temperature dependence of the magnetic sensitivity

can be matched to the magnet and the sensor assem-

bly. As a result, the output signal characteristic can be

fixed over the full temperature range. The sensor can

compensate for linear temperature coefficients ranging

from about −3100 ppm/K up to 400 ppm/K and qua-

dratic coefficients from about −5ppm/K

2 to 5 ppm/K2.

Please refer to Section 4.6. on page 23 for the recom-

mended settings for different linear temperature coeffi-

cients.

SLOPE

The SLOPE register contains the parameter for the

multiplier in the DSP. The Slope is programmable

between −4 and 4. The register can be changed in

steps of 0.00049. Slope = 1 corresponds to an

increase of the output signal by 100% if the digital

value at the A/D-converter output increases by 2048.

For all calculations, the digital value after the digital

signal processing is used. This digital information is

readable from the DIGITAL OUTPUT register.

SHIFT

The SHIFT register contains the parameter for the

adder in the DSP. Shift is the output signal without

external magnetic field (B = 0 mT) and programmable

from −100% up to 100%.

For calibration in the system environment, a 2-point

adjustment procedure is recommended. The suitable

Slope and Shift values for each sensor can be calcu-

lated individually by this procedure.

PARTNUMBER

In case of the Biphase-M output, a part number can be

defined. This part number will be sent during power-on

of the sensor. The first three sequences will display the

part number. Afterwards, the sensor will send the digi-

tal value corresponding to the applied magnetic field.

OUTPUT CHARACTERISTIC

The OUTPUT CHARACTERISTIC register defines the

shape of the sensor output signal. It consists of 32 set-

points. Each setpoint can be set to values between 0

and 511 LSB. The output characteristic has to be

monotonic increasing (Setpoint0 ≥ Setpoint1 ≥ Set-

pointN).

LOCKR

By setting this 1-bit register, all registers will be locked,

and the sensor will no longer respond to any supply

voltage modulation. This bit is active after the first

power-off and power-on sequence after setting the

LOCK bit.

Warning: This register cannot be reset!

DIGITAL OUTPUT

This 12-bit register delivers the actual digital value of

the applied magnetic field after the signal processing.

This register can only be read out, and it is the basis

for the calibration procedure of the sensor in the sys-

tem environment.

SLEW RATE

The SLEW RATE (fall time) of the PWM signal of

HAL855 is programmable. Please contact Micronas

for additional information.

HAL85x ADVANCE INFORMATION

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2.2.1. Two Additional Registers for HAL856

HIGH OUTPUT CURRENT

The HIGH CURRENT bits are the three lowest bits of

the current source register. These three bits define the

low current consumption of the sensor.

LOW OUTPUT CURRENT

The LOW CURRENT bits are the next three bits after

the HIGH CURRENT bits in the CURRENTSOURCE

sumption of the sensor.

2.3. Calibration Procedure

2.3.1. General Procedure

For calibration in the system environment, the applica-

tion kit from Micronas is recommended. It contains the

hardware for the generation of the serial telegram for

programming (Programmer Board Version 5.1) and the

corresponding software (PC85x) for the input of the

In this section, programming of the sensor using this

programming tool is explained. Please refer to

Section 5. on page 25 for information about program-

ming without this tool.

For the individual calibration of each sensor in the cus-

tomer application, a two-point adjustment is recom-

mended (see Fig. 2–5 for an example). When using

the application kit, the calibration can be done in three

steps:

Step 1: Input of the registers which need not be

adjusted individually

The magnetic circuit, the magnetic material with its

temperature characteristics, the filter frequency, the

part number, the output format, the low and high cur-

rent (in case of HAL856) are given for this application.

Therefore, the values of the following registers should

be identical for all sensors of the customer application.

–FILTER

(according to the maximum signal frequency)

–RANGE

(according to the maximum magnetic field at the

sensor position)

– TC and TCSQ

(depends on the material of the magnet and the

other temperature dependencies of the application)

–OUTPUT FORMAT

(according to the application requirements)

– OUTPUT PERIOD

(according to the application requirements)

– PARTNUMBER

(in case Biphase-M output format is used)

– LOW OUTPUT CURRENT

(in case of HAL856)

– HIGH OUTPUT CURRENT

(in case of HAL856)

Write the appropriate settings into the HAL85x regis-

ters.

Table 2–5: HIGH OUTPUT CURRENT

HIGH Current BIT SETTING

14 mA t.b.d.

15 mA t.b.d.

16 mA t.b.d.

Table 2–6: LOW OUTPUT CURRENT

Low Current BIT SETTING

6 mA t.b.d.

7 mA t.b.d.

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Step 2: Calculation of Shift and Slope

The calibration points 1 and 2 are linked with setpoints

0 and 31. The calibration will be done for these two

setpoints.

For highest accuracy of the sensor, calibration points

near the minimum and maximum input signal are rec-

ommended.

Set the system to calibration point 1 and read the reg-

ister DIGITAL OUTPUT. The result is the value

DOUTPUT1.

Now, set the system to calibration point 2, read the

DOUTPUT2.

With these values, the values for Sensitivity and Shift

are calculated as:

Note: The two equations above and the values in

Table 2–7 are only valid if the sensor is pre-pro-

grammed with the following values:

SHIFT = 50%, SLOPE = 1

and a linear output characteristic from

0 to 496 LSBs with a step width of 16 LSBs

The values for DIGITAL OUTPUTmax and DIGITAL

OUTPUTslope=1 depend on the programming of the

sensor registers OUTPUT CHARACTERISTIC,

SLOPE, SHIFT, and FILTER. If the sensor is pre-pro-

grammed with a linear output characteristic (from 0 to

496 LSBs in steps of 16 LSBs) and SHIFT is set to

50%, then the value for DIGITAL OUTPUTmax = 3968.

The values for DIGITAL OUTPUTslope=1 are different

for the five filter frequencies. Table 2–7 shows the

relationship between filter frequency and DIGITAL

OUTPUT for SLOPE = 1.

This calculation has to be done individually for each

sensor.

Next, chose a output characteristic and write the calcu-

lated values for Slope, Shift, and the selected output

characteristic into the IC for adjusting the sensor.

The sensor is now calibrated for the customer applica-

tion. However, the programming can be changed again

and again if necessary.

Note: For a second calibration step, the calibration has

to be started at the beginning. This means that a

new calibration must once again start at step

number 1. After storing the values for Sensitivity,

Slope, and Output Characteristic into the sen-

sors EEPROM, the calculation algorithm for the

2-point calibration is no longer valid and the sen-

sor has to be initialized with the standard param-

eters for Shift, Sensitivity, and Output Character-

istic.

Step 3: Locking the Sensor

The last step is activating the LOCK function with the

“LOCK” command. Please note that the LOCK function

becomes effective after power-down and power-up of

the Hall IC. The sensor is now locked and does not

respond to any programming or reading commands.

Warning: This register cannot be reset!

Doutput Digital Output=

Slope Doutputmax 2048⋅

∆Doutput Doutputslope 1= 4⋅⋅

-------------------------------------------------------------------------------=

Shift 100%

4096

--------------Doutputmax 2048 Doutput1–

∆Doutput

-------------------------------------------





⋅=

Table 2–7: Filter frequency DIGITAL OUTPUT

−3 dB Frequency DIGITAL OUTPUTslope=1

80 Hz 1983

160 Hz 1983

500 Hz 2644

1 kHz 2644

2 kHz 1511

HAL85x ADVANCE INFORMATION

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2.3.2. Calibration of the Angle Sensor

The following description explains the calibration pro-

cedure using an angle sensor with a HAL855 as an

example. The required output characteristic is shown

in Fig. 2–5.

– the angle range is from −25° to 25°

– temperature coefficient of the magnet: −500 ppm/K

Step 1: Input of the registers which need not be

adjusted individually

The register values for the following registers are given

for all applications:

–FILTER

Select the filter frequency: 500 Hz

–RANGE

Select the magnetic field range: 40 mT

–TC

For this magnetic material: 6

–TCSQ

For this magnetic material: 14

–OUTPUT FORMAT

Select the output format: PWM

– OUTPUT PERIOD

Select the output format: 8 ms

– PARTNUMBER

For this example: 1

Enter these values in the software, and use the “write

and store” command for permanently writing the val-

ues in the registers.

Angle

HAL85x

-30 -20 -10 0 10 20 30 °

100

Sine

Linear

Output

Duty

Cycle

Sine

Linear

First Calibration Point

Second Calibration Point

Fig. 2–5: Example for output characteristics

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Step 2: Calculation of Shift and Slope

There are two ways to calculate the values for Shift

and Slope.

Manual Calculation:

1. Set the system to calibration point 1 (angle 1 = 25°)

2. read the register DIGITAL OUTPUT.

For our example, the result is

DIGITAL OUTPUT1 = 3291.

3. Set the system to calibration point 2 (angle 2 = −25°)

4. read the register DIGITAL OUTPUT again.

For our example, the result is

DIGITAL OUTPUT2 = 985.

With these measurements and the pre-programming of

the sensor, the values for Slope and Shift are calcu-

lated as:

Software Calibration:

Use the menu CALIBRATE from the PC software and

enter the values for the registers which are not

adjusted individually. Set the system to calibration

point 1 (angle 1 = 25°), hit the button “Digital Output1”,

set the system to calibration point 2 (angle 2 = −25°), hit

the button “Digital Output2”, and hit the button “Calcu-

late”. The software will then calculate the appropriate

Shift and Slope.

This calculation has to be done individually for each

sensor. Now, select an output characteristic from the

selection box “Output Characteristics” and then press

the button “write and store” for programming the sen-

sor.

Step 3: Locking the Sensor

The last step is activating the LOCK function with the

“LOCK” command. Please note that the LOCK function

becomes effective after power-down and power-up of

the Hall IC. The sensor is now locked and does not

respond to any programming or reading commands.

Warning: This register cannot be reset!

Slope 3968

985 3291–()2644⋅

------------------------------------------------2048

------------0.3335–=⋅=

Shift 100%

4096

--------------3968 2048 3291–

985 3291–

------------------------------





52.22%=⋅⋅=

HAL85x ADVANCE INFORMATION

14 March 8, 2004; 6251-604-1AI Micronas

3. Specifications

3.1. Outline Dimensions

Fig. 3–1:

TO92UT-2: Plastic Transistor Standard UT package, 3 leads

Weight approximately 0.12 g

ADVANCE INFORMATION HAL85x

Micronas March 8, 2004; 6251-604-1AI 15

Fig. 3–2:

TO92UT-1: Plastic Transistor Standard UT package, 3 leads, spread

Weight approximately 0.12 g

HAL85x ADVANCE INFORMATION

16 March 8, 2004; 6251-604-1AI Micronas

Fig. 3–3:

TO92UT-2: Dimensions ammopack inline, not spread

ADVANCE INFORMATION HAL85x

Micronas March 8, 2004; 6251-604-1AI 17

Fig. 3–4:

TO92UT-1: Dimensions ammopack inline, spread

HAL85x ADVANCE INFORMATION

18 March 8, 2004; 6251-604-1AI Micronas

3.2. Dimensions of Sensitive Area

0.25 mm x 0.25 mm

3.3. Position of Sensitive Areas

3.4. Absolute Maximum Ratings

Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This

is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute

maximum rating conditions for extended periods will affect device reliability.

This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric

fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso-

lute maximum-rated voltages to this circuit.

All voltages listed are referenced to ground.

TO92UT-1/-2

x center of the package

y 1.5 mm nominal

Bd 0.3 mm

Symbol Parameter Pin No. Limit Values Unit

Min. Max.

VDD Supply Voltage 1 −14.51) 18 V

−IDD Reverse Supply Current 1 −502) mA

IZCurrent through Protection Device 1 or 3 −502) 502) mA

VOUT Output Voltage 3 −0.3 18 V

IOUT Continuous Output Current 3 −502) 502) mA

TJJunction Temperature Range −40

−40

150

1703) °C

NPROG Number of Programming Cycles −100

1) t < 1 min.

2) as long as TJmax is not exceeded

3) t < 1000h

ADVANCE INFORMATION HAL85x

Micronas March 8, 2004; 6251-604-1AI 19

3.4.1. Storage and Shelf Life

The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of

30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.

Solderability is guaranteed for one year from the date code on the package. Solderability has been tested after stor-

ing the devices for 16 hours at 155 °C. The wettability was more than 95%.

3.5. Recommended Operating Conditions

Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteris-

tics” is not implied and may result in unpredictable behavior of the device and may reduce reliability and lifetime.

All voltages listed are referenced to ground.

Symbol Parameter Pin No. Limit Values Unit Remarks

Min. Typ. Max.

VDD Supply Voltage 1 4.5 −14 V

IOUT Continuous Output Current 3 −−20 mA HAL855

CPProtection Capacitance 1,2 4.7 4.7 1000 nF

CLLoad Capacitance 2,3 0.33 4.7 100 nF

HAL85x ADVANCE INFORMATION

20 March 8, 2004; 6251-604-1AI Micronas

3.6. Characteristics

at TJ = −40 °C to +170 °C, VDD = 4.5 V to 14 V, after programming,

at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.

Typical Characteristics for TJ = 25 °C and VDD = 5 V.

Symbol Parameter Pin No. Limit Values Unit Test Conditions

Min. Typ. Max.

IDD Supply Current

over Temperature Range 1710mA

IDD,Low Low level sink current 1 5

programmable Parameter

Only HAL856

IDD,High High level sink current 1 12

programmable Parameter

Only HAL856

IOH Output Leakage Current over

Temperature Range 3 tbd. tbd tbd µA

VDDZ Over Voltage Protection at Supply 1 22 V

VOZ Over Voltage Protection at Output 3 22 V

Resolution 2,3 12 bit 1)

EAAccuracy Error over all 2,3 −202%

fPWM PWM Output Frequency over

Temperature Range 3 840

420

210

105

6.5

1000

500

250

125

62.5

31.3

15.6

7.8

1080

540

270

135

8.5

PWM period: 1 ms; 9 bit res.

PWM period: 2 ms; 10 bit res.

PWM period: 4 ms; 11 bit res.

PWM period: 8 ms; 12 bit res.

PWM period: 16 ms; 12 bit res.

PWM period: 32 ms; 12 bit res.

PWM period: 64 ms; 12 bit res.

PWM period: 128 ms;12 bit res.

fADC Internal ADC Frequency over

Temperature Range −110 128 150 kHz VDD = 4.5 V to 8.5 V

tr(O) Response Time of Output 3 −tbd −ms

td(O) Delay Time of Output 3 −tbd −ms

tPOD Power-Up Time (Time to reach

stabilized Output Voltage) 100 t.b.d µs

tLVD Power-Down Time (Time until

Output is off) 50 75 µs

VLVD Power Down Voltage 1 −3.8 −V t.b.d

VPOD Power On Reset Voltage 1 −4.0 −V t.b.d

BW Small Signal Bandwidth (−3dB) 3 −2−kHz BAC < 10 mT;

3 dB Filter frequency = 2 kHz

RDS,On ’On’ Resistance RDS of Output

Transistor 3−50 100 Ω

RthJA

TO92UT-1,

TO92UT-2

Thermal Resistance Junction to

Soldering Point −−150 200 K/W

1) if the Hall IC is programmed suitably

2) estimation of over all accuracy, if more than 50% of the selected magnetic field range are used and the Hall IC is programmed suitably

ADVANCE INFORMATION HAL85x

Micronas March 8, 2004; 6251-604-1AI 21

3.7. Magnetic Characteristics

at TJ = −40 °C to +170 °C, VDD = 4.5 V to 14 V, after programming,

at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.

Typical Characteristics for TJ = 25 °C and VDD = 5 V.

3.8. Diagnosis Functions

The HAL85x features various diagnosis functions, such as under voltage detection and open-circuit detection. A

description of the sensor’s behavior is shown in the table below (Typical Characteristics for TJ = 25 °C).

Symbol Parameter Pin No. Limit Values Unit Test Conditions

Min. Typ. Max.

BOffset Magnetic Offset 3 −101mTB = 0 mT, T

J = 25 °C

∆BOffset/∆T Magnetic Offset Change

due to TJ

−15 0 15 µT/K B = 0 mT

BHysteresis Magnetic Hysteresis −20 0 20 µT Range = 30 mT, Filter = 500 Hz

Parameter Limit Values Unit Output Behaviour

Min. Typ. Max.

Under voltage detection level VDD, UV 13.7 −V No PWM output signal (output on high-level)

Open VDD line −−−−No PWM output signal (output on high-level)

Open GND line −−−−No PWM output signal

HAL85x ADVANCE INFORMATION

22 March 8, 2004; 6251-604-1AI Micronas

4. Application Notes

4.1. Application Circuit

Micronas recommends the following application circuit

for applications with HAL856:

Fig. 4–1: Application circuit HAL856

For EMC protection, it is recommended to connect one

ceramic 4.7 nF capacitor between ground and the sup-

ply voltage line. It is also recommended to place a

30 Ω protection resistor in the supply voltage line.

Note: In case of HAL856, the third sensor pin should

be floating or connected to the GND line.

In addition, Micronas recommends the following two

application circuits for HAL855. The first circuit is rec-

ommended for applications with a connection to a reg-

ulated 5 V supply; the second, should be used for

applications connected directly to the car battery and a

pull-up to a 5 V line.

For both circuits, it is recommended to connect a

ceramic 4.7 nF capacitor between ground and the sup-

ply voltage, respectively, the output pin.

Fig. 4–2: Application circuit HAL855 for regulated

power supply

Fig. 4–3: Application circuit HAL855 for connection

with car battery.

4.2. Use of Two HAL855 in Parallel

Two different HAL855 sensors which are operated in

parallel to the same supply and ground line can be

programmed individually. In order to select the IC

which should be programmed, both Hall ICs are deac-

tivated by the “Deactivate” command on the common

supply line. Then, the appropriate IC is activated by an

“Activate” pulse on its output. Only the activated sen-

sor will react to all following read, write, and program

commands. If the second IC has to be programmed,

the “Deactivate” command is sent again, and the sec-

ond IC can be selected.

Fig. 4–4: Parallel operation of two HAL855

CP = 4.7 nF

VDD

GND

Vbattery = 8 V...18 V

Rsense = 150 Ω

RP = 150 Ω

System side Sensor side

Programming pin

CP = 4.7 nF

VDD

GND

Vsupply = 5 V ±0.5 V

Rpull-up

System side Sensor side

CL = 4.7 nF

OUT

CP = 4.7 nF

VDD

GND

Rpull-up

System side Sensor side

CL = 4.7 nF

OUT

Vsupply = 4.5 V...12 V

Vext = 5 V ±0.5 V

HAL 855

GND

10 nF

HAL 855

4.7 nF 4.7 nF

Sensor A Sensor B

VDD

OUT B & Select B

OUT A & Select A

ADVANCE INFORMATION HAL85x

Micronas March 8, 2004; 6251-604-1AI 23

4.3. Measurement of a PWM Output Signal

In case that the PWM output mode is activated, the

magnetic field information is coded in the duty-cycle of

the PWM signal. The duty-cycle is defined as the ratio

between the high time “s” and the period “d” of the

PWM signal (see Fig. 4–5).

Please note: The PWM signal is updated with the

falling edge. If the duty-cycle is evaluated with a

microcontroller, the trigger-level will be the falling edge

of the PWM signal.

Fig. 4–5: Definition of PWM signal

4.4. Measurement of a Split PWM Output Signal

Please contact Micronas for detailed information.

4.5. Measurement of a Biphase-M Output Signal

Please contact Micronas for detailed information.

4.6. Temperature Compensation

The relationship between the temperature coefficient

of the magnet and the corresponding TC and TCSQ

codes for linear compensation is given in the following

table. In addition to the linear change of the magnetic

field with temperature, the curvature can be adjusted

as well. For this purpose, other TC and TCSQ combi-

nations are required which are not shown in the table.

Micronas also offers a software named TC-Calc to

optimize the TC and TCSQ values for each individual

application based on customer measurement results.

Please contact Micronas for more detailed information.

The HAL85x and HAL8x5 contain the same tempera-

ture compensation circuits. If an optimal setting for the

HAL8x5 is already available, the same settings may be

used for the HAL85x.

Update

Out

time

Vhigh / Ihigh

Vlow / Ilow

Temperature

Coefficient of

Magnet (ppm/K)

TC TCSQ

400 31 6

300 28 7

200 24 8

100 21 9

01810

−50 17 10

−90 16 11

−130 15 11

−170 14 11

−200 13 12

−240 12 12

−280 11 12

−320 10 13

−360 9 13

−410 8 13

−450 7 13

−500 6 14

−550 5 14

−600 4 14

−650 3 14

−700 2 15

−750 1 15

−810 0 15

−860 −116

−910 −216

−960 −316

−1020 −417

−1070 −517

−1120 −617

−1180 −718

−1250 −818

−1320 −919

−1380 −10 19

−1430 −11 20

HAL85x ADVANCE INFORMATION

24 March 8, 2004; 6251-604-1AI Micronas

4.7. Ambient Temperature

Due to the internal power dissipation, the temperature

on the silicon chip (junction temperature TJ) is higher

than the temperature outside the package (ambient

temperature TA).

TJ = TA + ∆T

At static conditions and continuous operation, the fol-

lowing equation applies:

∆T = IDD * VDD * RthJA

For typical values, use the typical parameters. For

worst case calculation, use the max. parameters for

IDD and Rth, and the max. value for VDD from the appli-

cation.

For VDD = 5.5 V, Rth = 200 K/W and IDD = 10 mA the

temperature difference ∆T = 11 K.

For both sensors, the junction temperature TJ is speci-

fied. The maximum ambient temperature TAmax can be

calculated as:

TAmax = TJmax −∆T

4.8. EMC and ESD

For applications with disturbances by capacitive or

inductive coupling on the supply line or radiated distur-

bances, the application circuits shown in section 4.1

are recommended. Applications with this arrangement

should pass the EMC tests according to the product

standards ISO 7637-1...-3.

Please contact Micronas for the detailed investigation

reports with the EMC and ESD results.

For load dump protection of HAL855, Micronas recom-

mends a 220 Ω...270 Ω series resistor in the sensors

supply line (in addition to the circuitry in (see Fig. 4–3

on page 22).

−1500 −12 20

−1570 −13 20

−1640 −14 21

−1710 −15 21

−1780 −16 22

−1870 −17 22

−1950 −18 23

−2030 −19 23

−2100 −20 24

−2180 −21 24

−2270 −22 25

−2420 −24 26

−2500 −25 27

−2600 −26 27

−2700 −27 28

−2800 −28 28

−2900 −29 29

−3000 −30 30

−3100 −31 31

Temperature

Coefficient of

Magnet (ppm/K)

TC TCSQ

ADVANCE INFORMATION HAL85x

Micronas March 8, 2004; 6251-604-1AI 25

5. Programming of the Sensor

5.1. Definition of Programming Pulses

The sensor is addressed by modulating a serial tele-

gram on the supply voltage. The sensor answers with a

serial telegram on the output pin (for HAL855) or a

modulation of the current consumption in case of

HAL856.

The bits in the serial telegram have a different bit time

for the VDD-line and the sensors answer. The bit time

for the VDD-line is defined through the length of the

Sync Bit at the beginning of each telegram. The bit

time for the sensors answer is defined through the

Acknowledge Bit.

A logical “0” is coded as no output level change within

the bit time. A logical “1” is coded as an output level

change between 50% and 80% of the bit time. After

each bit, an output level change occurs.

5.2. Definition of the Telegram

Each telegram starts with the Sync Bit (logical 0), 3

bits for the Command (COM), the Command Parity Bit

(CP), 4 bits for the Address (ADR), and the Address

Parity Bit (AP).

There are 4 kinds of telegrams:

– Write a register (see Fig. 5–2)

After the AP Bit, follow 14 Data Bits (DAT) and the

Data Parity Bit (DP). If the telegram is valid and the

command has been processed, the sensor answers

with an Acknowledge Bit (logical 0) on the output.

Note: The sensor can only be programmed with pro-

grammer board version 5.1. If you have an older

version, please contact Micronas or your sup-

plier.

– Read a register (see Fig. 5–3)

After evaluating this command, the sensor answers

with the Acknowledge Bit, 14 Data Bits, and the

Data Parity Bit on the output.

– Programming the EEPROM cells

In order to permanently store the written data into

the EEPROM cells, an erase and program com-

mand have to be sent to the sensor. After the recog-

nition of the erase and program commands, the

HAL85x answers with an acknowledge pulse on its

output signal. After the acknowledge pulse, a pulse

on the VDD-line is created to start the charging of

the EEPROM cells. Then, the supply voltage is kept

constant during the charging time. To stop the

charging, a further command is sent to the HAL85x.

This stopping command can be a further program-

ming command or a read command (see Fig. 5–5).

– Lock a sensor (see Fig. 5–6)

To lock the EEPROM registers, the lock bit has to be

programmed. After recognition of the corresponding

lock command, the HAL85x provides an acknowl-

edge pulse on the output signal. Similar to the pro-

gramming of a sensor, a pulse is generated on the

supply voltage to start the charging of the lock bit.

To stop the charging, a read command is sent to the

IC.

Note: It is recommended to lock the sensor before per-

forming any kind of reliability tests or after the

last programming of the sensor. The HAL85x

has its full performance only after setting the

LOCK bit.

– Activate a sensor (see Fig. 5–4)

If more than one sensor is connected to the supply

line, selection can be done by first deactivating all

sensors. With an Activate pulse on the appropriate

output pin, an individual sensor can be selected. All

following commands will only be accepted from the

activated sensor. Please note: The activate and

deactivate commands are available only with

HAL855.

Fig. 5–1: Definition of logical 0 and 1 bit

trtf

tp0 tp0

logical 0

high-level

low-level

tp0

logical 1

high-level

low-level

or tp0

tp1

HAL85x ADVANCE INFORMATION

26 March 8, 2004; 6251-604-1AI Micronas

Table 5–1: Telegram parameters (All voltages are referenced to GND.)

Symbol Parameter Pin No. Limit Values Unit Test Conditions

Min. Typ. Max.

VDDL Supply Voltage for Low Level

during Programming 155.56V

VDDH Supply Voltage for High Level

during Programming 1 6.8 8.0 8.5 V

trRise time 1 0.05 ms

tfFall time 1 0.05 ms

tp0 Bit time on VDD 1 1.7 1.75 1.8 ms tp0 is defined through the Sync Bit

tpOUT Bit time on output pin 3 2 3 4 ms tpOUT is defined through the

Acknowledge Bit

tp1 Voltage Change for logical 1 1, 3 50 65 80 % % of tp0 or tpOUT

tPROG Programming Time for EEPROM 1 95 100 105 ms

VDD,PROG Supply voltage during

Programming 14.955.1V

tPRG,act Duration of start pulse to start

programming 1 tbd tbd tbd

trp Rise time of charging pulse 1 0.2 0.5 1 ms

tfp Fall time of charging pulse 1 0 1 ms

twDelay time of charging pulse after

Acknowledge 10.50.71ms

Vact Voltage for an Activate pulse 3 0 t.b.d. t.b.d. V

tact Duration of an Activate pulse 3 0.05 0.1 −ms

ADVANCE INFORMATION HAL85x

Micronas March 8, 2004; 6251-604-1AI 27

Fig. 5–2: Telegram for coding a Write command

Fig. 5–3: Telegram for coding a Read command

Fig. 5–4: Activate pulse (only for HAL855)

Sync COM CP ADR AP DAT DP

VDD

HAL855:

WRITE

HAL856:

VOUT

IDD

Sync COM CP ADR AP

DAT DPAcknowledge

VDD

READ

HAL855:

HAL856:

VOUT

IDD

tACT

VOUT

tftr

VACT

HAL85x ADVANCE INFORMATION

28 March 8, 2004; 6251-604-1AI Micronas

Fig. 5–5: Telegram for programming the EEPROM

Fig. 5–6: Telegram for locking the sensor

Sync COM1 CP1 ADR1 AP1

Acknowledge

STORE

Sync COM2 CP2 ADR2 AP2 Sync COM3 CP3 ADR3 AP3

DAT DPAcknowledge

2 x Delay Time Programming Time

Detail A

HAL855:

HAL856:

OUT

HAL855:

HAL856:

OUT

Sync COM1 CP1 ADR1 AP1

Acknowledge

LOCK

Sync COM2 CP2 ADR2 AP2

DAT DPAcknowledge

2 x Delay Time Programming Time

Detail A

HAL855:

HAL856:

OUT

HAL855:

HAL856:

OUT

ADVANCE INFORMATION HAL85x

Micronas March 8, 2004; 6251-604-1AI 29

5.3. Telegram Codes

Sync Bit

Each telegram starts with the Sync Bit. This logical “0”

pulse defines the exact timing for tp0.

Command Bits (COM)

The Command code contains 3 bits and is a binary

number. Table 5–2 shows the available commands and

the corresponding codes for the HAL85x.

Command Parity Bit (CP)

This parity bit is “1” if the number of zeros within the 3

Command Bits is uneven. The parity bit is “0”, if the

number of zeros is even.

Address Bits (ADR)

The Address code contains 4 bits and is a binary num-

ber. Table 5–3 shows the available addresses for the

HAL85x registers.

Address Parity Bit (AP)

This parity bit is “1” if the number of zeros within the 4

Address bits is uneven. The parity bit is “0” if the num-

ber of zeros is even.

Data Bits (DAT)

The 14 Data Bits contain the register information.

The registers use different number formats for the Data

Bits. These formats are explained in Section 5.4.

In the Write command, the last bits are valid. If, for

example, the TC register (7 bits) is written, only the last

7 bits are valid.

In the Read command, the first bits are valid. If, for

example, the TC register (7 bits) is read, only the first 6

bits are valid.

Data Parity Bit (DP)

This parity bit is “1” if the number of zeros within the

binary number is even. The parity bit is “0” if the num-

ber of zeros is uneven.

Acknowledge

After each telegram, the output answers with the

Acknowledge signal. This logical “0” pulse defines the

exact timing for tpOUT

Table 5–2: Available commands

Command Code Explanation

READ 0 read a Setup EEPROM register (like TC, TCSQ, Magnetic range, etc.)

READL 6 read a Characteristics EEPROM register (setpoints 0 to 15)

READH 7 read a Characteristics EEPROM register (setpoints 16 to 31)

WRITE 3 write a Setup EEPROM register (like TC, TCSQ, Magnetic range, etc.)

WRITEL 1 write a Characteristics EEPROM register (setpoints 0 to 15)

WRITEH 2 write a Characteristics EEPROM register (setpoints 16 to 31)

PROM 4 program all non-volatile registers

ERASE 5 erase all non-volatile registers

Please note:

The LOCK bit is set by using the WRITE command followed by a PROM.

HAL85x ADVANCE INFORMATION

30 March 8, 2004; 6251-604-1AI Micronas

5.4. Number Formats

Binary number:

The most significant bit is given as first, the least signif-

icant bit as last digit.

Example: 101001 represents 41 decimal.

Signed binary number:

The first digit represents the sign of the following

binary number (1 for negative, 0 for positive sign).

Example: 0101001 represents +41 decimal

1101001 represents −41 decimal

Two-complementary number:

The first digit of positive numbers is “0”, the rest of the

number is a binary number. Negative numbers start

with “1”. In order to calculate the absolute value of the

number, calculate the complement of the remaining

digits and add “1”.

Example: 0101001 represents +41 decimal

1010111 represents −41 decimal

Table 5–3: Available register addresses for HAL85x

Bits Format Customer Remark

Currentsource 1 10 binary read/write/program To define current levels

(IDD_HIGH and IDD_LOW)

Only for HAL856

Partnumber 2 11 binary read/write/program Only with BiPhase-M mode

Shift 3 11 two compl. read/write/program

Slope 4 14 signed binary read/write/program

Mode 5 14 binary read/write/program Range, filter and output for-

mat settings

Lock 6 2 binary write/program Lock Bit

Digital Readout 7 12 binary read Digital value after signal pro-

cessing

Offset 8 5 two compl. read/write/program Compensation of system

offsets

Specialcust. 9 6 binary read/write/program Special customer register

TC 11 7 signed binary read/write/program linear temperature coeffi-

cient

TCSQ 12 5 binary read/write/program quadratic temperature coef-

ficient

DEACTIVATE 15 11 binary write Deactivate the sensor

Only for HAL855

Curve Low 0 .. 15 9 binary write/read/program Setpoints 1 to 16

Curve High 0 .. 15 9 binary write/read/program Setpoints 17 to 32

ADVANCE INFORMATION HAL85x

Micronas March 8, 2004; 6251-604-1AI 31

5.5. Register Information

PARTNUMBER

– The register range is from 0 up to 2047.

SHIFT

– The register range is from −1024 up to 1023.

– The register value is calculated by:

SLOPE

– The register range is from −8192 up to 8191.

– The register value is calculated by:

TC and TCSQ

– The TC register range is from −31 up to 31.

– The TCSQ register range is from 0 up to 31.

Note: The word length TC register is 7 bit. The 6 LSBs

represent a signed binary number. The MSB

has to be ignored.

MODE

– The register range is from 0 up to 16383 and con-

tains the settings for PERIOD, FORMAT, FILTER,

and RANGE:

Please refer to the data sheet for the available

PERIOD, FORMAT, FILTER, and RANGE values.

DIGITAL-READOUT

– This register is read only.

– The register range is from 0 up to 4095.

CURRENTSOURCE

– t.b.d

DEACTIVATE (only for HAL855)

– This register can only be written.

– The register has to be written with 2063 decimal

(80F hexadecimal) for the deactivation.

– The sensor can be reset with an Activate pulse on

the output pin or by switching off and on the supply

voltage.

5.6. Programming Information

If the content of any register is to be changed, the

desired value must first be written into the correspond-

ing RAM register. Before reading out the RAM register

again, the register value must be permanently stored

in the EEPROM.

Permanently storing a value in the EEPROM is done

by first sending an ERASE command followed by

sending a PROM command. The address within the

ERASE and PROM commands is not important.

ERASE and PROM act on all registers in parallel.

If all HAL85x registers are to be changed, all writing

commands can be sent one after the other, followed by

sending one ERASE and PROM command at the end.

During all communication sequences, the customer

has to check if the communication with the sensor was

successful. This means that the acknowledge and the

parity bits sent by the sensor have to be checked by

the customer. If the Micronas programmer board is

used, the customer has to check the error flags sent

from the programmer board.

Note: For production and qualification tests, it is rec-

ommended to set the LOCK bit after final adjust-

ment and programming of HAL85x. The LOCK

function is active after the next power-up of the

sensor.

The success of the Lock Process should be

checked by reading at least one sensor register

after locking and/or by an analog check of the

sensors output signal.

Electrostatic Discharges (ESD) may disturb the

programming pulses. Please take precautions

against ESD.

Shift

100%* 1024

SHIFT =

Slope * 2048

SLOPE =

MODE = PERIOD * 512 + FORMAT * 64 +

FILTER * 8 + RANGE

All information and data contained in this data sheet are without any

commitment, are not to be considered as an offer for conclusion of a

contract, nor shall they be construed as to create any liability. Any new

issue of this data sheet invalidates previous issues. Product availability

and delivery are exclusively subject to our respective order confirmation

form; the same applies to orders based on development samples deliv-

ered. By this publication, Micronas GmbH does not assume responsibil-

ity for patent infringements or other rights of third parties which may

result from its use.

Further, Micronas GmbH reserves the right to revise this publication

and to make changes to its content, at any time, without obligation to

notify any person or entity of such revisions or changes.

No part of this publication may be reproduced, photocopied, stored on a

retrieval system, or transmitted without the express written consent of

Micronas GmbH.

HAL85x ADVANCE INFORMATION

32 March 8, 2004; 6251-604-1AI Micronas

Micronas GmbH

Hans-Bunte-Strasse 19

D-79108 Freiburg (Germany)

P.O. Box 840

D-79008 Freiburg (Germany)

Tel. +49-761-517-0

Fax +49-761-517-2174

E-mail: docservice@micronas.com

Internet: www.micronas.com

Printed in Germany

Order No. 6251-604-1AI

6. Data Sheet History

1. Advance Information: “HAL85x Programmable Lin-

ear Hall Effect Sensor”, March 8, 2004, 6251-604-

1AI. First release of the advance information.