HY57V281620HC(L/S)T
4 Banks x 2M x 16bits Synchronous DRAM
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use
of circuits described. No patent licenses are implied.
Rev. 0.3/Mar. 02 2
DESCRIPTION
The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications
which require large memory density and high bandwidth. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16
HY57V281620HC(L/S)T is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are
synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input
and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated
by a single control command (Burst length of 1,2,4,8, or full page), and the burst count sequence(sequential or interleave). A burst of
read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst
read or write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)
FEATURES
• Single 3.3±0.3V power supply
• All device pins are compatible with LVTTL interface
• JEDEC standard 400mil 54pin TSOP-II with 0.8mm
of pin pitch
• All inputs and outputs referenced to positive edge of
system clock
• Data mask function by UDQM or LDQM
• Internal four banks operation
• Auto refresh and self refresh
• 4096 refresh cycles / 64ms
• Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
• Programmable CAS Latency ; 2, 3 Clocks
ORDERING INFORMATION
Part No. Clock Frequency Power Organization Interface Package
HY57V281620HCT-6 166MHz
Normal
4Banks x 2Mbits
x16 LVTTL 400mil 54pin TSOP II
HY57V281620HCT-7 143MHz
HY57V281620HCT-K 133MHz
HY57V281620HCT-H 133MHz
HY57V281620HCT-8 125MHz
HY57V281620HCT-P 100MHz
HY57V281620HCT-S 100MHz
HY57V281620HC(L/S)T-6 166MHz
Low power
HY57V281620HC(L/S)T-7 143MHz
HY57V281620HC(L/S)T-K 133MHz
HY57V281620HC(L/S)T-H 133MHz
HY57V281620HC(L/S)T-8 125MHz
HY57V281620HC(L/S)T-P 100MHz
HY57V281620HC(L/S)T-S 100MHz
HY57V281620HC(L/S)T
Rev. 0.3/Mar. 02 3
PIN CONFIGURATION
PIN DESCRIPTION
PIN PIN NAME DESCRIPTION
CLK Clock The system clock input. All other inputs are registered to the SDRAM on the
rising edge of CLK
CKE Clock Enable Controls internal clock signal and when deactivated, the SDRAM will be one
of the states among power down, suspend or self refresh
CS Chip Select Enables or disables all inputs except CLK, CKE, UDQM and LDQM
BA0, BA1 Bank Address Selects bank to be activated during RAS activity
Selects bank to be read/written during CAS activity
A0 ~ A11 Address Row Address : RA0 ~ RA11, Column Address : CA0 ~ CA8
Auto-precharge flag : A10
RAS, CAS, WE
Row Address Strobe, Col-
umn Address Strobe, Write
Enable
RAS, CAS and WE define the operation
Refer function truth table for details
UDQM, LDQM Data Input/Output Mask Controls output buffers in read mode and masks input data in write mode
DQ0 ~ DQ15 Data Input/Output Multiplexed data input / output pin
VDD/VSS Power Supply/Ground Power supply for internal circuits and input buffers
VDDQ/VSSQ Data Output Power/Ground Power supply for output buffers
NC No Connection No connection
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
VSS
NC
UDQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
VDD
LDQM
/WE
/CAS
/RAS
/CS
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
54pin TSOP II
400mil x 875mil
0.8mm pin pitch
HY57V281620HC(L/S)T
Rev. 0.3/Mar. 02 4
FUNCTIONAL BLOCK DIAGRAM
2Mbit x 4banks x 16 I/O Synchronous DRAM
X decoders
State Machine
A0
A1
A11
BA0
BA1
Address buffers
Address
Registers
Mode Registers
Row
Pre
Decoders
Column
Pre
Decoders
Column Add
Counter
Row active
Column
Active
Burst
Counter
Data Out Control
CAS Latency
Internal Row
counter
DQ0
DQ1
DQ14
DQ15
refresh
Self refresh logic
& timer
Pipe Line Control
I/O Buffer & Logic
Bank Select
Sense AMP & I/O Gate
CLK
CKE
CS
RAS
CAS
WE
UDQM
LDQM
2Mx16 Bank 3
X decoders
X decoders
Memory
Cell
Array
Y decoders
X decoders
2Mx16 Bank 0
2Mx16 Bank 1
2Mx16 Bank 2
HY57V281620HC(L/S)T
Rev. 0.3/Mar. 02 5
ABSOLUTE MAXIMUM RATINGS
Note : Operation at above absolute maximum rating can adversely affect device reliability.
DC OPERATING CONDITION (TA=0 to 70°C)
Note :
1.All voltages are referenced to VSS = 0V
2.VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration.
3.VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration.
AC OPERATING TEST CONDITION (TA=0 to 70°C, VDD=3.3±0.3V, VSS=0V)
Note :
1.Output load to measure access times is equivalent to two TTL gates and one capacitor (50pF). For details, refer to AC/DC output
load circuit
Parameter Symbol Rating Unit
Ambient Temperature TA0 ~ 70 °C
Storage Temperature TSTG -55 ~ 125 °C
Voltage on Any Pin relative to VSS VIN, VOUT -1.0 ~ 4.6 V
Voltage on VDD relative to VSS VDD, VDDQ -1.0 ~ 4.6 V
Short Circuit Output Current IOS 50 mA
Power Dissipation PD1W
Soldering Temperature ⋅ Time TSOLDER 260 ⋅ 10 °C ⋅ Sec
Parameter Symbol Min Typ Max Unit Note
Power Supply Voltage VDD, VDDQ 3.0 3.3 3.6 V 1
Input High voltage VIH 2.0 3.0 VDDQ + 0.3 V 1,2
Input Low voltage VIL -0.3 0 0.8 V 1,3
Parameter Symbol Value Unit Note
AC Input High / Low Level Voltage VIH / VIL 2.4/0.4 V
Input Timing Measurement Reference Level Voltage Vtrip 1.4 V
Input Rise / Fall Time tR / tF 1 ns
Output Timing Measurement Reference Level Voltage Voutref 1.4 V
Output Load Capacitance for Access Time Measurement CL50 pF 1
HY57V281620HC(L/S)T
Rev. 0.3/Mar. 02 6
CAPACITANCE (TA=25°C, f=1MHz)
OUTPUT LOAD CIRCUIT
DC CHARACTERISTICS I (TA=0 to 70°C, VDD=3.3±0.3V)
Note :
1.VIN = 0 to 3.6V, All other pins are not tested under VIN =0V
2.DOUT is disabled, VOUT=0 to 3.6
Parameter Pin Symbol
-6/K/H -8/P/S
Unit
Min Max Min Max
Input capacitance CLK CI1 2.5 3.5 2.5 4.0 pF
A0 ~ A11, BA0, BA1, CKE, CS, RAS, CAS,
WE, UDQM, LDQM
CI22.5 3.8 2.5 5.0 pF
Data input / output capacitance DQ0 ~ DQ15 CI/O 4.0 6.5 4.0 6.5 pF
Parameter Symbol Min. Max Unit Note
Input Leakage Current ILI -1 1 uA 1
Output Leakage Current ILO -1 1 uA 2
Output High Voltage VOH 2.4 - V IOH = -2mA
Output Low Voltage VOL -0.4VIOL = +2mA
Vtt=1.4V
RT=250 Ω
50pF
Output
50pF
Output
DC Output Load Circuit AC Output Load Circuit
HY57V281620HC(L/S)T
Rev. 0.3/Mar. 02 7
DC CHARACTERISTICS II (TA=0 to 70°C, VDD=3.3±0.3V, VSS=0V)
Note :
1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HY57V281620HCT-6/K/H/8/P/S
4.HY57V281620HCLT-6/K/H/8/P/S
5.HY57V281620HCST-6/K/H/8/P/S
Parameter Symbol Test Condition
Speed
Unit Note
-6 -7 -K -H -8 -P -S
Operating Current IDD1 Burst length=1, One bank active
tRC ≥ tRC(min), IOL=0mA 130 130 120 120 120 110 110 mA 1
Precharge Standby Current
in Power Down Mode
IDD2P CKE ≤ VIL(max), tCK = 15ns 2
mA
IDD2PS CKE ≤ VIL(max), tCK = ∞1
Precharge Standby Current
in Non Power Down Mode
IDD2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns
Input signals are changed one time during
30ns. All other pins ≥ VDD-0.2V or ≤ 0.2V
15
mA
IDD2NS CKE ≥ VIH(min), tCK = ∞
Input signals are stable. 15
Active Standby Current
in Power Down Mode
IDD3P CKE ≤ VIL(max), tCK = 15ns 5
mA
IDD3PS CKE ≤ VIL(max), tCK = ∞5
Active Standby Current
in Non Power Down Mode
IDD3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns
Input signals are changed one time during
30ns. All other pins ≥ VDD-0.2V or ≤ 0.2V
30
mA
IDD3NS CKE ≥ VIH(min), tCK = ∞
Input signals are stable. 20
Burst Mode Operating
Current IDD4 tCK ≥ tCK(min), IOL=0mA
All banks active
CL=3 150 140 130 130 130 110 110
mA 1
CL=2 160 140 140 140 140 120 120
Auto Refresh Current IDD5 tRRC ≥ tRRC(min), All banks active 240 240 220 220 200 200 200 mA 2
Self Refresh Current IDD6 CKE ≤ 0.2V
2mA3
800 uA 4
500 uA 5
HY57V281620HC(L/S)T
Rev. 0.3/Mar. 02 8
AC CHARACTERISTICS I (AC operating conditions unless otherwise noted)
Note :
1.Assume tR / tF (input rise and fall time ) is 1ns
If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter
2.Access times to be measured with input signals of 1v/ns edge rate, from 0.8v to 2.0v
If tR > 1ns, then (tR/2-0.5)ns should be added to the parameter
Parameter Symbol
-6 -7 -K -H -8 -P -S
Unit Note
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
System Clock
Cycle Time
CAS Latency = 3 tCK3 6
1000
7 1000 7.5 1000 7.5
1000
8
1000
10
1000
10
1000
ns
CAS Latency = 2 tCK2 10 10 7.5 10 10 10 12 ns
Clock High Pulse Width tCHW 2.5 - 2.5 - 2.5 - 2.5 - 3 - 3 - 3 - ns 1
Clock Low Pulse Width tCLW 2.5 - 2.5 - 2.5 - 2.5 - 3 - 3 - 3 - ns 1
Access Time
From Clock
CAS Latency = 3 tAC3 - 5.4 - 5.4 - 5.4 - 5.4 - 6 - 6 - 6 ns
2
CAS Latency = 2 tAC2 - 6 - 6 - 5.4 - 6 - 6 - 6 - 6 ns
Data-Out Hold Time tOH 2.7 - 2.7 - 2.7 - 2.7 - 3 - 3 - 3 - ns
Data-Input Setup Time tDS 1.5 - 1.5 - 1.5 - 1.5 - 2 - 2 - 2 - ns 1
Data-Input Hold Time tDH 0.8 - 0.8 - 0.8 - 0.8 - 1 - 1 - 1 - ns 1
Address Setup Time tAS 1.5 - 1.5 - 1.5 - 1.5 - 2 - 2 - 2 - ns 1
Address Hold Time tAH 0.8 - 0.8 - 0.8 - 0.8 - 1 - 1 - 1 - ns 1
CKE Setup Time tCKS 1.5 - 1.5 - 1.5 - 1.5 - 2 - 2 - 2 - ns 1
CKE Hold Time tCKH 0.8 - 0.8 - 0.8 - 0.8 - 1 - 1 - 1 - ns 1
Command Setup Time tCS 1.5 - 1.5 - 1.5 - 1.5 - 2 - 2 - 2 - ns 1
Command Hold Time tCH 0.8 - 0.8 - 0.8 - 0.8 - 1 - 1 - 1 - ns 1
CLK to Data Output in Low-Z Time tOLZ 1 - 1 - 1 - 1 - 1 - 1 - 1 - ns
CLK to Data
Output in High-Z
Time
CAS Latency = 3 tOHZ3 2.7 5.4 2.7 5.4 2.7 5.4 2.7 5.4 3 6 3 6 3 6 ns
CAS Latency = 2 tOHZ2 2.7 5.4 2.7 5.4 2.7 5.4 3 6 3 6 3 6 3 6 ns
HY57V281620HC(L/S)T
Rev. 0.3/Mar. 02 9
AC CHARACTERISTICS II
Note :
1. A new command can be given tRRC after self refresh exit
Parameter Symbol
-6 -7 -K -H -8 -P -S
Unit Note
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
RAS Cycle Time
Operation tRC 60 - 60 - 60 - 65 - 68 - 70 - 70 - ns
Auto Refresh tRRC 60 - 65 - 65 - 65 - 68 - 70 - 70 - ns
RAS to CAS Delay tRCD 18 - 20 - 15 - 20 - 20 - 20 - 20 - ns
RAS Active Time tRAS 42 100K 45 100K 45 100K 45 100K 48 100K 50 100K 50 100K ns
RAS Precharge Time tRP 18 - 20 - 15 - 20 - 20 - 20 - 20 - ns
RAS to RAS Bank Active Delay tRRD 12 - 14 - 15 - 15 - 16 - 20 - 20 - ns
CAS to CAS Delay tCCD 1-1-1-1-1-1-1-CLK
Write Command to Data-In Delay tWTL 0 - 0 - 0 - 0 - 0 - 0 - 0 - CLK
Data-In to Precharge Command tDPL 2-2-2-2-1-1-1-CLK
Data-In to Active Command tDAL 5-5-4-5-4-3-3-CLK
DQM to Data-Out Hi-Z tDQZ 2-2-2-2-2-2-2-CLK
DQM to Data-In Mask tDQM 0-0-0-0-0-0-0-CLK
MRS to New Command tMRD 2-2-2-2-2-2-2-CLK
Precharge to Data
Output Hi-Z
CAS Latency = 3tPROZ33-3-3-3-3-3-3-CLK
CAS Latency = 2tPROZ22-2-2-2-2-2-2-CLK
Power Down Exit Time tPDE 1-1-1-1-1-1-1-CLK
Self Refresh Exit Time tSRE 1-1-1-1-1-1-1-CLK1
Refresh Time tREF - 64 - 64 - 64 - 64 - 64 - 64 - 64 ms
HY57V281620HC(L/S)T
Rev. 0.3/Mar. 02 10
IBIS SPECIFICATION
IOH Characteristics (Pull-up)
IOL Characteristics (Pull-down)
Volt age 100MHz
(Min)
100MHz
(Max)
66MHz
(Min)
(V) I(mA) I(mA) I(mA)
3.45 -2.4
3.3 -27.3
3.0 0 -74.1 -0.7
2.6 -21.1 -129.2 -7.5
2.4 -34.1 -153.3 -13.3
2.0 -58.7 -197 -27.5
1.8 -67.3 -226.2 -35.5
1.65 -73 -248 -41.1
1.5 -77.9 -269.7 -47.9
1.4 -80.8 -284.3 -52.4
1.0 -88.6 -344.5 -72.5
0 -93 -502.4 -93
Volt age 100MHz
(Min)
100MHz
(Max)
66MHz
(Min)
(V) I(mA) I(mA) I(mA)
0000
0.4 27.5 70.2 17.7
0.65 41.8 107.5 26.9
0.85 51.6 133.8 33.3
1.0 58.0 151.2 37.6
1.4 70.7 187.7 46.6
1.5 72.9 194.4 48.0
1.65 75.4 202.5 49.5
1.8 77.0 208.6 50.7
1.95 77.6 212.0 51.5
3.0 80.3 219.6 54.2
3.45 81.4 222.6 54.9
-600
-500
-400
-300
-200
-100
0
00.511.522.533.5
Voltage (V)
I (mA)
I
OH
Min (66MHz)
66MHz and 100MHz Pull-up
I
OH
Min (100MHz)
I
OH
Max (66 /100MHz)
0
50
100
150
200
250
00.511.522.533.5
Voltage (V)
I (mA)
66MHz and 100MHz Pull-down
I
OL
Min (100MHz)
I
OL
Min (66MHz)
I
OL
Max (100MHz)
HY57V281620HC(L/S)T
Rev. 0.3/Mar. 02 11
VDD Clamp @ CLK, CKE, CS, DQM & DQ Minimum VDD clamp current
VDD (V) I(mA)
0.0 0.0
0.2 0.0
0.4 0.0
0.6 0.0
0.7 0.0
0.8 0.0
0.9 0.0
1.0 0.23
1.2 1.34
1.4 3.02
1.6 5.06
1.8 7.35
2.0 9.83
2.2 12.48
2.4 15.30
2.6 18.31
VSS Clamp @ CLK, CKE, CS, DQM & DQ
VSS (V) I (mA)
-2.6 -57.23
-2.4 -45.77
-2.2 -38.26
-2.0 -31.22
-1.8 -24.58
-1.6 -18.37
-1.4 -12.56
-1.2 -7.57
-1.0 -3.37
-0.9 -1.75
-0.8 -0.58
-0.7 -0.05
-0.6 0.0
-0.4 0.0
-0.2 0.0
0.0 0.0
0
5
10
15
20
0123
Voltage
mA
I (mA)
(Referenced to VDD)
-60
-50
-40
-30
-20
-10
0
-3 -2.5 -2 -1.5 -1 -0.5 0
Voltage
mA
I (mA)
Minimum VSS clamp current
HY57V281620HC(L/S)T
Rev. 0.3/Mar. 02 12
DEVICE OPERATING OPTION TABLE
HY57V281620HC(L/S)T-6
HY57V281620HC(L/S)T-7
HY57V281620HC(L/S)T-K
HY57V281620HC(L/S)T-H
HY57V281620HC(L/S)T-8
HY57V281620HC(L/S)T-P
HY57V281620HC(L/S)T-S
CAS Latency tRCD tRAS tRC tRP tAC tOH
166MHz(6ns) 3CLKs 3CLKs 7CLKs 10CLKs 3CLKs 5.4ns 2.7ns
143MHz(7ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 5.4ns 2.7ns
133MHz(7.5ns) 2CLKs 3CLKs 6CLKs 9CLKs 3CLKs 5.4ns 2.7ns
CAS Latency tRCD tRAS tRC tRP tAC tOH
143MHz(7ns) 3CLKs 3CLKs 7CLKs 10CLKs 3CLKs 5.4ns 2.7ns
133MHz(7.5ns) 3CLKs 3CLKs 7CLKs 10CLKs 3CLKs 5.4ns 2.7ns
125MHz(8ns) 3CLKs 3CLKs 7CLKs 10CLKs 3CLKs 6ns 3ns
CAS Latency tRCD tRAS tRC tRP tAC tOH
133MHz(7.5ns) 2CLKs 2CLKs 6CLKs 8CLKs 2CLKs 5.4ns 2.7ns
125MHz(8ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 6ns 3ns
100MHz(10ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns
CAS Latency tRCD tRAS tRC tRP tAC tOH
133MHz(7.5ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 5.4ns 2.7ns
125MHz(8ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 6ns 3ns
100MHz(10ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns
CAS Latency tRCD tRAS tRC tRP tAC tOH
125MHz(8ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 6ns 3ns
100MHz(10ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns
83MHz(12ns) 2CLKs 2CLKs 4CLKs 6CLKs 2CLKs 6ns 3ns
CAS Latency tRCD tRAS tRC tRP tAC tOH
100MHz(10ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns
83MHz(12ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns
66MHz(15ns) 2CLKs 2CLKs 4CLKs 6CLKs 2CLKs 6ns 3ns
CAS Latency tRCD tRAS tRC tRP tAC tOH
100MHz(10ns) 3CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns
83MHz(12ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns
66MHz(15ns) 2CLKs 2CLKs 4CLKs 6CLKs 2CLKs 6ns 3ns
HY57V281620HC(L/S)T
Rev. 0.3/Mar. 02 13
COMMAND TRUTH TABLE
Note :
1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high
2. X = Don′t care, H = Logic High, L = Logic Low. BA =Bank Address, RA = Row Address, CA = Column Address,
Opcode = Operand Code, NOP = No Operation
3. The burst read sigle write mode is entered by programming the write burst mode bit (A9) in the mode register to a logic 1.
Command CKEn-1 CKEn CS RAS CAS WE DQM ADDR A10/
AP BA Note
Mode Register Set H X LLLLX OP code
No Operation H X
HXXX
XX
LHHH
Bank Active H X L L H H X RA V
Read
H X LHLHXCA
L
V
Read with Autoprecharge H
Write
HXLHLLXCA
L
V
Write with Autoprecharge H
Precharge All Banks
HXLLHLXX
HX
Precharge selected Bank LV
Burst Stop H X L H H L X X
DQM H X V X
Auto Refresh H H L L L H X X
Burst-Read-Single-
WRITE H XLLLLX A9 Pin High
(Other Pins OP code)
MRS
Mode
Self Refresh1
Entry H L LLLHX
X
Exit L H
HXXX
X
LHHH
Precharge
power down
Entry H L
HXXX
X
X
LHHH
Exit L H
HXXX
X
LHHH
Clock
Suspend
Entry H L
HXXX
X
XLVVV
Exit L H X X
HY57V281620HC(L/S)T
Rev. 0.3/Mar. 02 14
PACKAGE INFORMATION
400mil 54pin Thin Small Outline Package
11.938(0.4700)
11.735(0.4620)
10.262(0.4040)
10.058(0.3960)
22.327(0.8790)
22.149(0.8720)
5deg
0deg
0.597(0.0235)
0.406(0.0160)
0.210(0.0083)
0.120(0.0047)
1.194(0.0470)
0.991(0.0390)
0.80(0.0315)BSC 0.400(0.016)
0.300(0.012)
UNIT : mm(inch)
0.150(0.0059)
0.050(0.0020)
