NESG2101M16
NEC's NPN SiGe
HIGH FREQUENCY TRAN SIS TOR
DESCRIPTION
NEC's NESG2101M16 is fabricated using NECs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifi ers,
medium power amplifi ers, and oscillators
California Eastern Laboratories
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
• HIGH OUTPUT POWER:
P1dB = 21 dBm at 2 GHz
• LOW NOISE FIGURE:
NF = 0.9 dB at 2 GHz
NF = 0.6 dB at 1 GHz
• HIGH MAXIMUM STABLE POWER GAIN:
MSG = 17 dB at 2 GHz
• LOW PROFILE M16 PACKAGE:
6-pin lead-less minimold
FEATURES
PART NUMBER NESG2101M16
PACKAGE OUTLINE M16
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
P1dB Output Power at 1 dB Compression Point dBm 21
VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT
GL Linear Gain, VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz, dB 15
NF Noise Figure at VCE = 2 V, IC = 10 mA, f = 2 GHz, dB 0.9 1.2
ZS = ZSOPT, ZL = ZLOPT
Ga Associated Gain at VCE = 2 V, IC = 10 mA, f = 2 GHz, dB 11.0 13.0
ZS = ZSOPT, ZL = ZLOPT
NF Noise Figure at VCE = 2 V, IC = 7mA, f = 1 GHz, dB 0.6
ZS = ZSOPT, ZL = ZLOPT
Ga Associated Gain at VCE = 2 V, IC = 7 mA, f = 1 GHz, dB 19.0
ZS = ZSOPT, ZL = ZLOPT
MSG Maximum Stable Gain1 at VCE = 3 V, IC = 50 mA, f = 2 GHz dB 14.5 17.0
|S21E|2 Insertion Power Gain at VCE = 3 V, IC = 50 mA, f = 2 GHz dB 11.5 13.5
fT Gain Bandwidth Product at VCE = 3 V, IC = 50 mA, f = 2 GHz GHz 14 17
Cre Reverse Transfer Capacitance2 at VCB = 2 V, IE = 0 mA, f = 1 MHz pF 0.4 0.5
ICBO Collector Cutoff Current at VCB = 5V, IE = 0 nA 100
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 100
hFE DC Current Gain3 at VCE = 2 V, IC = 15 mA 130 190 260
ELECTRICAL CHARACTERISTICS (TA = 25°C)
RF
DC
S21
S12
Notes:
1. MSG =
2. Collector to base capacitance when the emitter pin is grounded.
3. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
PRELIMINARY DATA SHEET
M16
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB.
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
NESG2101M16
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M16
6-PIN LEAD-LESS MINIMOLD
PIN CONNECTIONS
1. Collector
2. Emitter
3. Emitter
SYMBOLS PARAMETERS UNITS RATINGS
VCBO Collector to Base Voltage V 13.0
VCEO Collector to Emitter Voltage V 5.0
VEBO Emitter to Base Voltage V 1.5
IC Collector Current mA 100
PT2 Total Power Dissipation mW 190
TJ Junction Temperature °C 150
TSTG Storage Temperature °C -65 to +150
ORDERING INFORMATION
PART NUMBER QUANTITY SUP PLY ING FORM
NESG2101M16-T3 10 K pcs
reel Pin 1 (Collector), Pin 6
(Emitter) face the perforation
side of the tape
0.5±0.05
0.125+0.1
-0.05
0.40.4
0.8
0.15±0.05
1.2+0.07
-0.05
0.8+0.07
-0.05
1.0±0.05
123
654
Hz
4. Base
5. Emitter
6. Emitter
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Com
p
ound Semiconductor Devices, Ltd
.
11/13/2003
