SFH 415
SFH 416
GaAs-IR-Lumineszenzdioden
GaAs Infrare d Em itters
SFH 415 SFH 416
2001-04-18 1
Wesentliche Merkmale
• GaAs-LED mit sehr hohem Wirkungsgrad
• Hohe Zuverlässigkeit
• Gute spektrale Anpassung an
Si-Fotoempfänger
• SFH 415: Gehäusegleich mit SFH 300,
SFH 203
Anwendungen
• IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern
• Gerätefernsteuerungen für Gleich- und
Wechsellichtbetrieb
• Sensorik
• Diskrete Lichtschranken
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
SFH 415 Q62702-P296 5-mm-LED-Gehäuse (T 13/4), schwarz eingefärbt, Anschluß
im 2.54-mm-Raster (1/10’’),
Kathodenkennzeichnung: kürzerer Anschluß
5 mm LED package (T 13/4), black-colored epoxy resin lens,
solder tabs lead spacing 2.54 mm (1/10’’),
cathode marking: short lead
SFH 415-U Q62702-P1137
SFH 416-R Q62702-P1139
Features
• Very highly efficient GaAs-LED
• High reliability
• Spectral match with silicon photodetectors
• SFH 415: Same package as SFH 300,
SFH 203
Applications
• IR remote control of hi-fi and TV-sets, video
tape recorders, dimmers
• Remote control for ste ady and varying intensity
• Sensor technology
• Discrete interrupters
2001-04-18 2
SFH 415, SFH 416
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 100 °C
Sperrspannung
Reverse voltage VR5V
Durchlaßstrom
Forward current IF100 mA
Stoßstrom, tp = 10 µs, D = 0
Surge current IFSM 3A
Verlustleistung
Power dissipation Ptot 165 mW
Wärmewiderstand
Thermal resistance RthJA 450 K/W
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak 950 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA
∆λ 55 nm
Abstrahlwinkel
Half angle
SFH 415
SFH 416 ϕ
ϕ± 17
± 28 Grad
deg.
Aktive Chipfläche
Active chip area A0.09 mm2
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area L×B
L×W0.3 ×0.3 mm
Abstand Chipoberfläche bis Linsenscheitel
Distance chip front to lens top
SFH 415
SFH 416 H
H4.2 …4.8
3.4 …4.0 mm
mm
SFH 415, SFH 416
2001-04-18 3
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, bei IF = 100 mA, RL = 50 Ω
Switching tim es, Ιe from 10% to 90% and from
90% to 10%, IF = 100 mA, RL = 50 Ω
tr, tf0.5 µs
Kapazität,
Capacitance
VR = 0 V, f = 1 MHz
Co25 pF
Durchlaßspannung,
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µsVF
VF
1.3 (≤ 1.5)
2.3 (≤ 2.8) V
V
Sperrstrom,
Reverse current
VR = 5 V
IR0.01 (≤ 1) µA
Gesamtstrahlungsfluß,
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe22 mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
Temperature coefficient of Ie or Φe,
IF = 100 mA
TCI– 0.5 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA TCV– 2mV/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA TCλ+ 0.3 nm/K
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
2001-04-18 4
SFH 415, SFH 416
Gruppierung der Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Grouping of Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter Symbol Wert
Value Einheit
Unit
SFH 415 SFH 415-U SFH 416-R
Strahlstärke
Radiant intensity
IF = 100 mA,
tp = 20 ms Ie min
Ie max
≥ 25
–> 40
–> 10
–
mW/sr
mW/sr
Strahlstärke
Radiant intensity
IF = 1 A,
tp = 100 µsIe typ.–600 150 mW/sr
SFH 415, SFH 416
2001-04-18 5
Relati ve Sp ectral Emission
Irel = f (λ)
Forward Cu rrent
IF = f (VF), single pulse, tp = 20 µs
Permissible Pulse Handling
Capability IF = f (τ), TA = 25 °C
duty cycle D = parameter
OHRD1938
λ
rel
Ι
0880 920 960 1000
nm
1060
20
40
60
80
%
100
10
OHR01554
F
V
-3
-2
10
-1
10
0
10
1
10
0123456V8
A
Ι
F
t
OHR00860
p
-5
10
10 2
Ι
F
10 3
10 4
5
DC
0.2
0.5
0.1
0.005
0.01
0.02
0.05
tp
T
Ι
F
tp
T
D=
5
mA
-4
10 -3
10 -2
10 -1
10 0
10 1
10 2
10s
D=
Radiant Intensity
Single pulse , tp = 20 µs
Radiation Characteristics,
SFH 415 Ιrel = f (ϕ)
Radiation Characteristics,
SFH 416 Ιrel = f (ϕ)
Ιe
Ιe 100 mA = f (IF)
OHR01551
10
-3
Ι
F
-2
10
10
-1
10
0
10
1
10
2
Ι
e 100 mA
e
Ι
-2
10
-1
10
0
10
1
10A
A
OHR01552
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
OHR01553
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚0.40.60.81.0
100˚
90˚
80˚
70˚
60˚
50˚
0˚10˚20˚30˚40˚
0
0.2
0.4
0.6
0.8
1.0
ϕ
Max. Permissible Forward Current
IF = f (TA)
OHR00883
0
F
Ι
0
20
40
60
80
100
120
20 40 60 80 100 120
mA
˚C
TA
RthjA = 450 K/W
2001-04-18 6
SFH 415, SFH 416
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: mm (inch) / Dimensio ns are s pecified as follow s: m m (inc h).
SFH 415
7.8 (0.307)
7.5 (0.295)
9.0 (0.354)
8.2 (0.323)
29 (1.142)
27 (1.063)
1.8 (0.071)
1.2 (0.047)
4.8 (0.189)
4.2 (0.165)
ø5.1 (0.201)
ø4.8 (0.189)
0.8 (0.031)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
2.54 (0.100)
spacing
5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
Area not flat
Chip position
Cathode
GEOY6645
SFH 416
5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
ø5.1 (0.201)
ø4.8 (0.189)
2.54 (0.100)
spacing
5.7 (0.224)
5.5 (0.217)
6.9 (0.272)
6.1 (0.240)
4.0 (0.157)
3.4 (0.134)
29.5 (1.161)
27.5 (1.083)
1.8 (0.071)
1.2 (0.047)
0.8 (0.031)
0.4 (0.016)
Area not flat
0.6 (0.024)
0.4 (0.016)
Cathode Chip position GEXY6632
SFH 415, SFH 416
2001-04-18 7
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of compon ent and shall not be considered as assur ed c haracteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Compo nents use d in life-support de vices or syste ms must be express ly authorize d for such purp ose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause t he fail ure of tha t life -suppo rt dev ice or s ystem, or to affe ct i ts saf ety or effecti venes s of t hat device o r sy stem.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assume th at the health of the user may be endangered.
